arXiv subjects

Igor A. Abrikosov

Publications and source records attributed to Igor A. Abrikosov.

At least 19 recordsLinked to original sources

arXiv2026

Color Centers in Cubic Boron Nitride

Cubic boron nitride (c-BN) is a wide-bandgap semiconductor (WBGS) with potential applications in both power electronics and quantum technologies. Color centers in WBGS can be used as single photon emitters and quantum sensors. Several zero phonon lines have been measured in c-BN experiment but not yet identified. To systematically probe the combinatorially complex chemical space of defects, we generate a large-scale point defect data set for c-BN. We apply density functional theory calculation implemented in a high-throughput workflow Automatic Defect Analysis and Qualification (ADAQ) to broadly screen for point defect complexes containing s- or p-elements. More than 8000 defects have been calculated in different charge and spin states. The calculated properties are stored in defect database and are then filtered to find defects with properties similar to the NV-center in diamond. More accurate calculations using hybrid functionals are then performed on a selected set of promising defects to further assess their suitability for quantum technology. In particular, we reexamined the ONVB defect which likely explains the GC-2 line. The hybrid calculations also suggest other defect candidates with bright emission, such as two carbon defects and the NaB- defect.

cond-mat.mtrl-sci↗

arXiv2026

Electronic structure and oxidation states in high-pressure synthesized isostructural CeCN$_5$ and TbCN$_5$

Understanding the behavior of 4$f$ electrons in materials containing rare earth elements is one of the fundamental questions within condensed matter physics. In this work the electronic properties of isostructural CeCN$_5$ and TbCN$_5$, both recently synthesized at extreme pressure, are investigated using Density Functional Theory (DFT) calculations. We include the on-site Coulomb repulsion between localized 4$f$ states within the static DFT+U framework; the DFT+U results are cross-checked with DFT+dynamical mean-field theory (DMFT) calculations within the quasi-atomic (Hubbard-I) approximation. Despite CeCN$_5$ and TbCN$_5$ being isostructural compounds Ce and Tb show different oxidation states, 4+ and 3+ respectively. This leads to distinctly different electronic properties: the former compound is an insulator, while the latter is a metal. An extra electron which is donated by Ce to the polymeric C-N network is distributed across the network. This leads to a modification of the bond length in CeCN$_5$ compared to TbCN$_5$. Still, the polymeric C-N networks can accommodate the different oxidation states in isostructural lanthanide-carbon-nitrogen (LnCN) compounds. Our results underline that LnCN compounds under high pressure offer a unique platform for probing the interplay between 4$f$-electron behavior and structural complexity.

cond-mat.mtrl-sci↗

arXiv2025

Halogen Chains with One-Dimensional Semi-Metallic Electronic Structure and Peierls Physics in Polymorphs of Na4X5 (X = I, Br, Cl) Compounds

Since the pioneering works of Peierls, one-dimensional materials have attracted great attention. Still, the synthesis of truly monoatomic chains remains elusive. In this study, we explore a novel path of experimental synthesis of monoatomic one-dimensional chains by their chemical stabilization in ionic compounds. We demonstrate that in synthesized at high pressure sodium halides Na4X5 (X = I, Br, Cl) with hP18 Ga4Ti5-type structures, transfer of valence electrons from cations to anions leads to the formation of halogen chains connected with other atoms only by ionic interaction and having one-dimensional electronic structure. The Peierls physics in the systems is confirmed by theoretical calculations, newly synthesized incommensurately modulated i-hP18-Na4X5 (X = I, Br, Cl) compounds, as well as by the discovered hP36 phases of Na4Cl5 and Na4Br5.

cond-mat.mtrl-sci↗

arXiv2025

Revisiting thermal transport in CuCl: First-principles calculations and machine learning force fields

Accurate prediction of lattice thermal conductivity ($κ_l$) in strongly anharmonic materials requires renormalized interatomic force constants (IFCs) and appropriate incorporation of diagonal and off-diagonal contributions and higher-order scattering. We investigate CuCl, a highly anharmonic system with a simple zincblende structure and ultralow $κ_l$. Our calculations, including IFC renormalization and four-phonon scattering, show excellent agreement with the experiment, underscoring the critical role of both effects in the accurate estimation of $κ_l$. Furthermore, the unusual pressure dependence of $κ_l$ is explored using a rigorously validated machine-learned force field, with the predicted values showing good agreement with the experimentally observed trend of monotonic decrease. This behavior is primarily driven by a significant increase in four-phonon scattering and a reduction in the group velocity of transverse acoustic modes. Overall, this study establishes a robust framework for modeling thermal transport in strongly anharmonic materials.

cond-mat.mtrl-sci↗

arXiv2025

Machine learning interatomic potential for the low-modulus Ti-Nb-Zr alloys in the vicinity of dynamical instability

Traditionally, alloying and thermal treatment are considered as the main tools for design of new materials. Application of first-principles simulations can significantly accelerate the process of materials design, however, to account for both, multicomponent chemical disorder and finite temperature effects in theoretical simulations is a challenging task. In this work we have trained machine learning interatomic potential to effectively simulate finite temperature elastic properties of multicomponent β-Ti94-xNbxZr6 alloys. Our simulations predict the presence of the elinvar effect for the wide range of temperatures. Importantly, we predict that in a vicinity of dynamical and mechanical instability, the β-Ti94-xNbxZr6 alloys demonstrate strongly non-linear concentration-dependence of elastic moduli, which leads to low values of moduli comparable to that of human bone. Moreover, these alloys demonstrate a strong anisotropy of directional Young's modulus which can be helpful for microstructure tailoring and design of materials with desired elastic properties.

cond-mat.mtrl-sci↗

arXiv2025

Theoretical characterization of NV-like defects in 4H-SiC using ADAQ with the SCAN and r2SCAN meta-GGA functionals

Kohn-Sham density functional theory (DFT) is widely used for screening color centers in semiconductors. While the Perdew-Burke-Ernzerhof (PBE) functional is efficient, it often lacks precision in describing defects. The Heyd-Scuseria-Ernzerhof (HSE) functional is more accurate but computationally expensive, making it impractical for large-scale screening. However, third-rung functionals of "Jacob's ladder" remain largely under explored in this context. This study evaluates the Strongly Constrained and Appropriately Normed (SCAN) family of meta-GGA functionals as potential alternatives to PBE for characterizing NV-like color centers in 4H-SiC using the Automatic Defect Analysis and Qualification (ADAQ) framework. We examine nitrogen, oxygen, fluorine, sulfur, and chlorine vacancies in 4H-SiC, focusing on applications in quantum technology. Our results show that SCAN and r2SCAN achieve greater accuracy than PBE, approaching HSE's precision at a lower computational cost. This suggests that the SCAN family offers a practical improvement for screening new color centers, with computational demands similar to PBE.

cond-mat.mtrl-sci↗

arXiv2024

Temperature dependence of the AB-lines and Optical Properties of the Carbon-Antisite Vacancy Pair in 4H-SiC

Defects in semiconductors have in recent years been revealed to have interesting properties in the venture towards quantum technologies. In this regard, silicon carbide has shown great promise as a host for quantum defects. In particular, the ultra-bright AB photoluminescence lines in 4H-SiC are observable at room temperature and have been proposed as a single-photon quantum emitter. These lines have been previously studied and assigned to the carbon antisite-vacancy pair (CAV). In this paper, we report on new measurements of the AB-lines' temperature dependence, and carry out an in-depth computational study on the optical properties of the CAV defect. We find that the CAV defect has the potential to exhibit several different zero-phonon luminescences with emissions in the near-infrared telecom band, in its neutral and positive charge states. However, our measurements show that the AB-lines only consist of three non-thermally activated lines instead of the previously reported four lines, meanwhile our calculations on the CAV defect are unable to find optical transitions in full agreement with the AB-line assignment. In the light of our results, the identification of the AB-lines and the associated room temperature emission require further study.

cond-mat.mtrl-sci↗

arXiv2024

Na in Diamond: High Spin Defects Revealed by the ADAQ High-Throughput Computational Database

Color centers in diamond are at the forefront of the second quantum revolution. A handful of defects are in use, and finding ones with all the desired properties for quantum applications is arduous. By using high-throughput calculations, we screen 21607 defects in diamond and collect the results in the ADAQ database. Upon exploring this database, we find not only the known defects but also several unexplored defects. Specifically, defects containing sodium stand out as particularly relevant because of their high spins and predicted improved optical properties compared to the NV center. Hence, we studied these in detail, employing high-accuracy theoretical calculations. The single sodium substitutional (Na$\mathrm{_C}$) has various charge states with spin ranging from 0.5 to 1.5, ZPL in the near-infrared, and a high Debye-Waller factor, making it ideal for biological quantum applications. The sodium vacancy (NaV) has a ZPL in the visible region and a potential rare spin-2 ground state. Our results show sodium implantation yields many interesting spin defects that are valuable additions to the arsenal of point defects in diamond studied for quantum applications.

cond-mat.mtrl-sci↗

arXiv2024

Carbon-contaminated topological defects in hexagonal boron nitride for quantum photonics

Topological defects, such as Stone-Wales defects and grain boundaries, are common in 2D materials. In this study, we investigate the intricate interplay of topological defects and carbon contamination in hexagonal boron nitride revealing an intriguing class of color centers. We demonstrate that both carbon contamination and strain can stabilize Stone-Wales configurations and give rise to emitters with desirable optical properties in the visible spectral range. Inspired by these results, we further demonstrate that carbon atoms at grain boundaries can resolve energetic B-B and N-N bonds leading to highly favorable atomic structures that may facilitate the accumulation of carbon contamination at the boundaries. Similarly to contaminated Stone-Wales defects, carbon-doped grain boundaries can also give rise to color centers emitting in the visible spectral range with short radiative lifetime and high Debye-Waller factors. Our discoveries shed light on an exciting class of defects and pave the way toward the identification of color centers and single photon emitters in hBN.

cond-mat.mtrl-sci↗

arXiv2024

ADAQ-SYM: Automated Symmetry Analysis of Defect Orbitals

Quantum technologies like single photon emitters and qubits can be enabled by point defects in semiconductors, with the NV-center in diamond being the most prominent example. There are many different semiconductors, each potentially hosting interesting defects. The symmetry properties of the point defect orbitals can yield useful information about the behavior of the system, such as the interaction with polarized light. We have developed a tool to perform symmetry analysis of point defect orbitals obtained by plane-wave density functional theory simulations. The software tool, named ADAQ-SYM, calculates the characters for each orbital, finds the irreducible representations, and uses selection rules to find which optical transitions are allowed. The capabilities of ADAQ-SYM are demonstrated on several defects in diamond and 4H-SiC. The symmetry analysis explains the different zero phonon line (ZPL) polarization of the hk and kh divacancies in 4H-SiC.

cond-mat.mtrl-sci↗

arXiv2024

Strong electron-phonon coupling and phonon-induced superconductivity in tetragonal C$_3$N$_4$ with hole doping

C$_3$N$_4$ is a recently discovered phase of carbon nitrides with the tetragonal crystal structure [D.Laniel $\textit{et al.}$, Adv. Mater. 2023, 2308030] that is stable at ambient conditions. C$_3$N$_4$ is a semiconductor exhibiting flat-band anomalies in the valence band, suggesting the emergence of many-body instabilities upon hole doping. Here, using state-of-the-art first-principles calculations we show that hole-doped C$_3$N$_4$ reveals strong electron-phonon coupling, leading to the formation of a gapped superconducting state. The phase transition temperatures turn out to be strongly dependent on the hole concentration. We propose that holes could be injected into C$_3$N$_4$ via boron doping which induces, according to our results, a rigid shift of the Fermi energy without significant modification of the electronic structure. Based on the electron-phonon coupling and Coulomb pseudopotential calculated from first principles, we conclude that the boron concentration of 6 atoms per nm$^3$ would be required to reach the critical temperature of $\sim$36 K at ambient pressure.

cond-mat.supr-con↗

arXiv2023

Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC

In this study, we address the selection rules with respect to the polarization of the optical excitation of two colour centres in 4H-SiC and 6H-SiC with potential for applications in quantum technology, the divacancy and the nitrogen-vacancy pair. We show that the photoluminescence (PL) of the axial configurations of higher symmetry (C3v) than the basal ones (C1h) can be cancelled using any excitation (resonant or non-resonant) with polarization parallel to the crystal axis (EL||c). The polarization selection rules are determined using group-theoretical analysis and simple physical arguments showing that phonon-assisted absorption with EL||c is prohibited despite being formally allowed by group theory. A comparison with the selection rules for the silicon vacancy, another defect with C3v symmetry, is also carried out. Using the selection rules, we demonstrate selective excitation of only one basal divacancy configuration in 4H-SiC, the P3 line and discuss the higher contrast and increased Debye-Waller factor in the selectively excited spectrum.

quant-ph↗

arXiv2023

Exploring Magnetism of Lead-free Halide Double Perovskites: A High-Throughput First-Principles Study

We have performed a comprehensive, first-principles high-throughput study of the magnetic properties of halide double perovskites, $Cs_2BB^\prime Cl_6$, with magnetic ions occupying one or both B and B$^\prime$ sites. Our findings indicate a general tendency for these materials to exhibit antiferromagnetic ordering with low Néel temperatures. At the same time, we reveal a few potential candidates that predicted to be ferromagnetic with relatively high Curie temperatures. Achieving ferromagnetic coupling might be feasible via simultaneously alloying at B and B$^\prime$ sites with magnetic 3d and non-magnetic 5d ions. With this approach, we discover that $Cs_2HgCrCl_6$, $Cs_2AgNiCl_6$ and $Cs_2AuNiCl_6$ have high Curie temperatures relative to their peers, with the latter two exhibiting half metallic behaviour. Further, this study illuminates the underpinning mechanism of magnetic exchange interactions in halide double perovskites, enabling a deeper understanding of their magnetic behaviour. Our findings, especially the discovery of the compounds with robust half-metallic properties and high Curie temperatures holds promise for potential applications in the field of spintronics.

cond-mat.mtrl-sci↗

arXiv2023

The Chlorine Vacancy in 4H-SiC: An NV-like Defect With Telecom Emission

The diamond nitrogen vacancy (NV) center remains an ever increasing topic of interest. At present, it is considered an ideal example of a solid-state qubit applicable in quantum communication, computing, and sensing alike. With its success, the search for defects that share or improve upon its advantageous features is an ongoing endeavor. By performing large-scale high-throughput screening of 52600 defects in 4H silicon carbide (SiC), we identify a collection of NV-like color-centers of particular interest. From this list, the single most promising candidate consists of a silicon vacancy and chlorine substituted on the carbon site, and is given the name of the chlorine vacancy (ClV) center. Through high-accuracy first-principle calculations, we confirm that the ClV center is similar to the NV center in diamond in its local structure and shares many qualitative and quantitative features in the electronic structure and spin properties. In contrast to the NV center, however, the ClV center in SiC exhibits emission in the telecom range near the C-band.

cond-mat.mtrl-sci↗

arXiv2023

First Principles Theory of the Pressure Induced Invar Effect in FeNi Alloys

The Fe$_{0.64}$Ni$_{0.36}$ alloy exhibits an anomalously low thermal expansion at ambient conditions, an effect that is known as the invar effect. Other Fe$_{x}$Ni$_{1-x}$ alloys do not exhibit this effect at ambient conditions but upon application of pressure even Ni-rich compositions show low thermal expansion, thus called the pressure induced invar effect. We investigate the pressure induced invar effect for Fe$_{x}$Ni$_{1-x}$ for x = 0.64, 0.50, 0.25 by performing a large set of supercell calculations, taking into account noncollinear magnetic states. We observe anomalies in the equation of states for the three compositions. The anomalies coincide with magnetic transitions from a ferromagnetic state at high volumes to a complex magnetic state at lower volumes. Our results can be interpreted in the model of noncollinear magnetism which relates the invar effect to increasing contribution of magnetic entropy with pressure.

cond-mat.mtrl-sci↗

arXiv2022

Electronic structure of the magnetic halide double perovskites Cs2(Ag,Na)FeCl6 from first-principles

A family of magnetic halide double perovskites (HDPs) have recently attracted attention due to their potential to broaden application areas of halide double perovskites into e.g. spintronics. Up to date the theoretical modelling of these systems have relied on primitive approximations to the density functional theory (DFT). In this paper, we study structural, electronic and magnetic properties of the Fe$^{3+}$-containing HDPs Cs$_2$AgFeCl$_6$ and Cs$_2$NaFeCl$_6$ using a combination of more advanced DFT-based methods, including DFT+U, hybrid-DFT and treatments of various magnetic states. We examine the effect of varying the effective Hubbard parameter, U$_{eff}$, in DFT+U and the mixing-parameter, $α$, in hybrid DFT on the electronic structure and structural properties. Our results reveal a set of localized Fe(d) states that are highly sensitive to these parameters. Cs$_2$AgFeCl$_6$ and Cs$_2$NaFeCl$_6$ are both antiferromagnets with Neél temperatures well below room temperature and are thus in their paramagnetic (PM) state at the external conditions relevant to most applications. Therefore, we have examined the effect of disordered magnetism on the electronic structure of these systems and find that while Cs$_2$NaFeCl$_6$ is largely unaffected, Cs$_2$AgFeCl$_6$ shows significant renormalization of its electronic band structure.

cond-mat.mtrl-sci↗

arXiv2022

Phase formation in CrFeCoNi nitride thin films

As a single-phase alloy, CrFeCoNi is a face centered cubic (fcc) material related to the archetypical high-entropy Cantor alloy CrFeCoNiMn. For thin films, CrFeCoNi of approximately equimolar composition tends to assume an fcc structure when grown at room temperature by magnetron sputtering. However, the single-phase solid solution state is typically not achieved for thin films grown at higher temperatures. The same holds true for Cantor alloy-based ceramics (nitrides and oxides), where phase formation is extremely sensitive to process parameters such as the amount of reactive gas. This study combines theoretical and experimental methods to understand the phase formation in nitrogen-containing CrFeCoNi thin films. Density functional theory calculations considering three competing phases (CrN, Fe-Ni and Co) show that the free energy of mixing, delta G of (CrFeCoNi)1-xNx solid solutions has a maximum at x = 0.20-0.25, and delta G becomes lower when x less than 0.20, greater than 0.25. Thin films of (CrFeCoNi)1-xNx (x = 0.14-0.41) grown by magnetron sputtering show stabilization of the metallic fcc when x lesser than or equal to 0.22 and the stabilization of the NaCl B1 structure when x is greater than 0.33, consistent with the theoretical prediction. In contrast, films with intermediate amounts of nitrogen (x = 0.22) grown at higher temperatures show segregation into multiple phases of CrN, Fe-Ni-rich and Co. These results offer an explanation for the requirement of kinetically limited growth conditions at low temperature for obtaining single-phase CrFeCoNi Cantor-like nitrogen-containing thin films and are of importance for understanding the phase-formation mechanisms in multicomponent ceramics.

cond-mat.mtrl-sci↗

arXiv2022

Exhaustive characterization of modified Si vacancies in 4H-SiC

The negatively charged silicon vacancy ($\mathrm{V_{Si}^-}$) in silicon carbide is a well-studied point defect for quantum applications. At the same time, a closer inspection of ensemble photoluminescence and electron paramagnetic resonance measurements reveals an abundance of related but so far unidentified signals. In this study, we search for defects in 4H-SiC that explain the above magneto-optical signals in a defect database generated by Automatic Defect Analysis and Qualification (ADAQ) workflows. This search reveals only one class of atomic structures that exhibit silicon-vacancy-like properties in the data: a carbon antisite ($\mathrm{C_{Si}}$) within sub-nanometer distances from the silicon vacancy only slightly alters the latter without affecting the charge or spin state. Such a perturbation is energetically bound. We consider the formation of $\mathrm{V_{Si}^-+C_{Si}}$ up to 2 nm distance and report their zero phonon lines and zero field splitting values. In addition, we perform high-resolution photoluminescence experiments in the silicon vacancy region and find an abundance of lines. Comparing our computational and experimental results, several configurations show great agreement. Our work demonstrates the effectiveness of a database with high-throughput results in the search for defects in quantum applications.

cond-mat.mtrl-sci↗