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Igor A. Abrikosov

Publications and source records attributed to Igor A. Abrikosov.

At least 37 records · Page 2Linked to original sources

Synthesis of Ultra-Incompressible Carbon Nitrides Featuring Three-Dimensional Frameworks of CN4 Tetrahedra Recoverable at Ambient Conditions

More than thirty years ago, carbon nitrides featuring 3D frameworks of tetrahedral CN4 units were identified as one of the great aspirations of materials science, expected to have a hardness greater than or comparable to diamond. Since then, no unambiguous experimental evidence of their existence has been delivered. Here, we report the high-pressure high-temperature synthesis of the long-sought-after covalent carbon nitrides, tI14-C3N4, hP126-C3N4, and tI24-CN2, in laser-heated diamond anvil cells. Their structures were solved and refined using synchrotron single-crystal X-ray diffraction. In these solids, carbon atoms, all sp3-hybridized, and nitrogen atoms are fully saturated, forming four and three covalent bonds, respectively, leading to three-dimensional arrangements of corner-sharing CN4 tetrahedra. These carbon nitrides are ultra-incompressible, with hP126-C3N4 and tI24-CN2 even rivalling diamond's incompressibility, and superhard. These novel compounds are recoverable to ambient conditions in crystalline form and chemically stable in air. Being wide-band gap semiconductors with intriguing features in their electronic structure, they are expected to exhibit multiple exceptional functionalities besides their mechanical properties, opening new perspectives for materials science.

cond-mat.mtrl-sci↗

High-Pressure Synthesis of Seven Lanthanum Hydrides with a Significant Variability of Hydrogen Content

The lanthanum-hydrogen system has attracted significant attention following the report of superconductivity in LaH10 at near-ambient temperatures and high pressures. Here, we present the results of our single-crystal X-ray diffraction studies on this system, supported by density functional theory calculations, which reveal an unexpected chemical and structural diversity of lanthanum hydrides synthesized in the range of 50 to 180 GPa. Seven lanthanum hydrides were produced, LaH3, LaH~4, LaH4+δ, La4H23, LaH6+δ, LaH9+δ, and LaH10+δ, and the atomic coordinates of lanthanum in their structures determined. The regularities in rare-earth element hydrides unveiled here provide clues to guide the search for other synthesizable hydrides and candidate high-temperature superconductors. The hydrogen content variability in lanthanum hydrides and the samples' phase heterogeneity underline the challenges related to assessing potentially superconducting phase(s) and the nature of electronic transitions in high-pressure hydrides.

cond-mat.mtrl-sci↗

Revealing Phosphorus Nitrides up to the Megabar Regime: Synthesis of alpha-P3N5, delta-P3N5 and PN2

Non-metal nitrides are an exciting field of chemistry, featuring a significant number of compounds that can possess outstanding material properties. This characteristic relies on maximizing the number of strong covalent bonds, with crosslinked XN6 octahedra frameworks being particularly intriguing. In this study, the phosphorus-nitrogen system was studied up to 137 GPa in laser-heated diamond anvil cells and three previously unobserved phases were synthesized and characterized by single-crystal X-ray diffraction, Raman spectroscopy measurements and density functional theory calculations. Delta-P3N5 and PN2 were found to form at 72 and 134 GPa, respectively, and both feature dense 3D networks of the so far elusive PN6 units. The two are ultra-incompressible, having a bulk modulus of K0 = 322 GPa for delta-P3N5 and K0 = 339 GPa for PN2. Upon decompression below 7 GPa, delta-P3N5 undergoes a transformation into a novel alpha'-P3N5 solid, stable at ambient conditions, that has a unique structure type based on PN4 tetrahedra. The formation of alpha'-P3N5 underlines that a phase space otherwise inaccessible can be explored through high-pressure formed phases.

cond-mat.mtrl-sci↗

Electronic and optical properties of crystalline nitrogen versus black phosphorus: A comparative first-principles study

Crystalline black nitrogen (BN) is an allotrope of nitrogen with the black phosphorus (BP) structure recently synthesized at high pressure by two independent research groups [Ji et al., Sci. Adv. 6, eaba9206 (2020); Laniel et al., Phys. Rev. Lett. 124, 216001 (2020)]. Here, we present a systematic study of the electronic and optical properties of BN focusing on its comparison with BP. To this end, we use the state-of-the-art quasiparticle self-consistent $GW$ approach with vertex corrections in both the electronic and optical channels. Despite many similarities, the properties of BN are found to be considerably different. Unlike BP, BN exhibits a larger optical gap (2.5 vs 0.26 eV), making BN transparent in the visible spectral region with a highly anisotropic optical response. This difference can be primarily attributed to a considerably reduced dielectric screening in BN, leading to enhancement of the effective Coulomb interaction. Despite relatively strong Coulomb interaction, exciton formation is largely suppressed in both materials. Our analysis of the elastic properties shows exceptionally high stiffness of BN, comparable to that of diamond.

cond-mat.mtrl-sci↗

Isotope purification induced reduction of spin relaxation and spin coherence times in semiconductors

Paramagnetic defects and nuclear spins are often the major sources of decoherence and spin relaxation in solid-state qubits realized by optically addressable point defect spins in semiconductors. It is commonly accepted that a high degree of depletion of nuclear spins can enhance the coherence time by reducing magnetic noise. Here we show that the isotope purification beyond a certain optimal level becomes contra-productive, when both electron and nuclear spins are present in the vicinity of the qubits. Using state-of-the-art numerical tools and considering the silicon vacancy qubit in various spin environments, we demonstrate that the coupling to spin-1/2 point defects in the lattice can be significantly enhanced by isotope purification. The enhanced coupling shortens the spin relaxation time that in turn may limit the the coherence time of spin qubits. Our results can be straightforwardly generalized to triplet point defect qubits, such as the NV center in diamond and the divacancy in SiC.

cond-mat.mes-hall↗

Low-field microwave-free sensors using dipolar spin relaxation of quartet spin states in silicon carbide

Paramagnetic defects and nuclear spins are the major sources of magnetic field-dependent spin relaxation in point defect quantum bits. The detection of related optical signals has led to the development of advanced relaxometry applications with high spatial resolution. The nearly degenerate quartet ground state of the silicon vacancy qubit in silicon carbide (SiC) is of special interest in this respect, as it gives rise to relaxation rate extrema at vanishing magnetic field values and emits in the first near-infra-red transmission window of biological tissues, providing an opportunity for developing novel sensing applications for medicine and biology. However, the relaxation dynamics of the silicon vacancy center in SiC have not yet been fully explored. In this paper, we present results from a comprehensive theoretical investigation of the dipolar spin relaxation of the quartet spin states in various local spin environments. We discuss the underlying physics and quantify the magnetic field and spin bath dependent relaxation time $T_1$. Using these findings we demonstrate that the silicon vacancy qubit in SiC can implement microwave-free low magnetic field quantum sensors of great potential.

cond-mat.mtrl-sci↗

Aromatic Hexazine [N6]4- Anion Revealed in the Complex Structure of the High-Pressure Potassium Nitride K9N56

Recent high-pressure synthesis of pentazolates and subsequent stabilization of the aromatic [N5]- anion at atmospheric pressure had an immense impact on nitrogen chemistry. Here, we present the first synthesis of an aromatic hexazine [N6]4- anion realized in high-pressure potassium nitride K9N56 at 46 and 61 GPa. The extremely complex structure of K9N56 was solved based on synchrotron single-crystal X-ray diffraction and corroborated by density functional theory calculations. This result resolves a long-standing question of the aromatic hexazine stability and the possibility of its synthesis.

cond-mat.mtrl-sci↗

Quantum sensor in a single layer van der Waals material

Point defect qubits in semiconductors have demonstrated their outstanding high spatial resolution sensing capabilities of broad multidisciplinary interest. Two-dimensional (2D) semiconductors hosting such sensors have recently opened up new horizons for sensing in the subnanometer scales in 2D heterostructures. However, controlled creation of quantum sensor in a single layer 2D materials with high sensitivity has been elusive so far. Here, we report on a novel 2D quantum sensor, the VB2 centre in hexagonal boron nitride (hBN), with superior sensing capabilities. The centre's inherently low symmetry configuration gives rise to unique electronic and spin properties that implement a qubit in a 2D material with unprecedented sensitivity. The qubit is decoupled from its dense spin environment at low magnetic fields that gives rise to the reduction of the spin resonance linewidth and elongation of the coherence time. The VB2 centre is also equipped with a classical memory that can be utilized in storing population information. Using scanning transmission electron microscopy imaging, we confirm the presence of the point defect structure in free standing monolayer hBN created by electron beam irradiation. Our results provide a new material solution towards atomic-scale sensing in low dimensions.

cond-mat.mes-hall↗

Dipolar spin relaxation of divacancy qubits in silicon carbide

Divacancy spins in silicon carbide implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numerous open questions about the physics of divacancy point defects, for instance, spin relaxation has not been thoroughly studied yet. Here, we carry out a theoretical study on environmental spin induced spin relaxation processes of divacancy qubits in 4H-SiC. We reveal all the relevant magnetic field values where the longitudinal spin relaxation time T$_1$ drops resonantly due to the coupling to either nuclear spins or electron spins. We quantitatively analyze the dependence of the T$_1$ time on the concentration of point defect spins and the applied magnetic field in the most relevant cases and provide an analytical expression. We demonstrate that dipolar spin relaxation plays a significant role both in as-grown and ion implanted samples and it often limits the coherence time in 4H-SiC.

cond-mat.mes-hall↗

Thermodynamic and electronic properties of ReN$_2$ polymorphs at high-pressure

High pressure synthesis of rhenium nitride pernitride ReN$_2$ with crystal structure unusual for transition metal dinitrides and high values of hardness and bulk modulus attracted significant attention to this system. We investigate the thermodynamic and electronic properties of the P2$_1$/c phase of ReN$_2$ and compare them with two other polytypes, C2/m and P4/mbm phases suggested in the literature. Our calculations of the formation enthalpy at zero temperature show that the former phase is the most stable of the three up to pressure p=170 GPa, followed by the stabilization of the P4/mbm phase at higher pressure. The theoretical prediction is confirmed by diamond anvil cell synthesis of the P4/mbm ReN$_2$ at $\approx$175 GPa. Considering the effects of finite temperature in the quasi-harmonic approximation at p=100 GPa we demonstrate that the P2$_1$/c phase has the lowest free energy of formation at least up to 1000 K. Our analysis of the pressure dependence of the electronic structure of the rhenium nitride pernitride shows a presence of two electronic topological transitions around 18 GPa, when the Fermi surface changes its topology due to an appearance of a new electron pocket at the high-symmetry Y$_2$ point of the Brillouin zone while the disruption of a neck takes place slightly off from the $Γ$-A line.

cond-mat.mtrl-sci↗

ADAQ: Automatic workflows for magneto-optical properties of point defects in semiconductors

Automatic Defect Analysis and Qualification (ADAQ) is a collection of automatic workflows developed for high-throughput simulations of magneto-optical properties of point defect in semiconductors. These workflows handle the vast number of defects by automating the processes to relax the unit cell of the host material, construct supercells, create point defect clusters, and execute calculations in both the electronic ground and excited states. The main outputs are the magneto-optical properties which include zero-phonon lines, zero-field splitting, and hyperfine coupling parameters. In addition, the formation energies are calculated. We demonstrate the capability of ADAQ by performing a complete characterization of the silicon vacancy in silicon carbide in the polytype 4H (4H-SiC).

cond-mat.mtrl-sci↗

High-pressure synthesis of Dirac materials: layered van der Waals bonded BeN$_4$ polymorph

High pressure chemistry is known to inspire the creation of unexpected new classes of compounds with exceptional properties. Here we report the synthesis at ~90 GPa of novel beryllium polynitrides, monoclinic and triclinic BeN4. The triclinic phase, upon decompression to ambient conditions, transforms into a compound with atomic-thick BeN4 layers interconnected via weak van der Waals bonds consisting of polyacetylene-like nitrogen chains with conjugated π-systems and Be atoms in square-planar coordination. Theoretical calculations for a single BeN4 layer show that its electronic lattice is described by a slightly distorted honeycomb structure reminiscent of the graphene lattice and the presence of Dirac points in the electronic band structure at the Fermi level. The BeN4 layer, i.e. beryllonitrene, represents a qualitatively new class of 2D materials that can be built of a metal atom and polymeric nitrogen chains and host anisotropic Dirac fermions.

cond-mat.mtrl-sci↗

Photoluminescence at the ground state level anticrossing of the nitrogen-vacancy center in diamond

The nitrogen-vacancy center (NV center) in diamond at magnetic fields corresponding to the ground state level anticrossing (GSLAC) region gives rise to rich photoluminescence (PL) signals due to the vanishing energy gap between the electron spin states, which enables to have an effect on the NV center's luminescence for a broad variety of environmental couplings. In this article we report on the GSLAC photoluminescence signature of NV ensembles in different spin environments at various external fields. We investigate the effects of transverse electric and magnetic fields, P1 centers, NV centers, and the $^{13}$C nuclear spins, each of which gives rise to a unique PL signature at the GSLAC. The comprehensive analysis of the couplings and related optical signal at the GSLAC provides a solid ground for advancing various microwave-free applications at the GSLAC, including but not limited to magnetometry, spectroscopy, dynamic nuclear polarization (DNP), and nuclear magnetic resonance (NMR) detection. We demonstrate that not only the most abundant $^{14}$NV center but the $^{15}$NV can also be utilized in such applications and that nuclear spins coupled to P1 centers can be polarized directly by the NV center at the GSLAC, through a giant effective nuclear $g$-factor arising from the NV center-P1 center-nuclear spin coupling. We report on new alternative for measuring defect concentration in the vicinity of NV centers and on the optical signatures of interacting, mutually aligned NV centers.

cond-mat.mes-hall↗

Elinvar effect in $β-$Ti simulated by on-the-fly trained moment tensor potential

A combination of quantum mechanics calculations with machine learning (ML) techniques can lead to a paradigm shift in our ability to predict materials properties from first principles. Here we show that on-the-fly training of an interatomic potential described through moment tensors provides the same accuracy as state-of-the-art {\it ab inito} molecular dynamics in predicting high-temperature elastic properties of materials with two orders of magnitude less computational effort. Using the technique, we investigate high-temperature bcc phase of titanium and predict very weak, Elinvar, temperature dependence of its elastic moduli, similar to the behavior of the so-called GUM Ti-based alloys [T. Sato {\ it et al.}, Science {\bf 300}, 464 (2003)]. Given the fact that GUM alloys have complex chemical compositions and operate at room temperature, Elinvar properties of elemental bcc-Ti observed in the wide temperature interval 1100--1700 K is unique.

cond-mat.mtrl-sci↗

Mott and spin-Peierls physics in TiPO$_4$ under high pressure

TiPO$_4$ is a Mott insulator and one of few inorganic compounds featuring a spin-Peierls phase at low temperature. Recent experimental studies have suggested the presence of spin-Peierls dimerization also at ambient temperature though at high pressure. Here, we present a combined experimental and theoretical study of the energetics of the high-pressure phase. We analyse dimerization properties and their coupling to spin degrees of freedom. Most importantly, we argue that TiPO$_4$ resents a direct analogue to the celebrated binary transition metal oxide VO$_2$. TiPO$_4$ allows to assess spin-dimer physics in the high-pressure regime in a controlled fashion, having the potential to become an important model system representative of the class of dimerized transition metal oxides.

cond-mat.str-el↗

Anharmonicity and Ultra-Low Thermal Conductivity in Lead-Free Halide Double Perovskites

The lead-free halide double perovskite class of materials offers a promising venue for resolving issues related to toxicity of Pb and long-term stability of the lead-containing halide perovskites. We present a first-principles study of the lattice vibrations in Cs$_2$AgBiBr$_6$ , the prototypical compound in this class, and show that the lattice dynamics of Cs$_2$AgBiBr$_6$ is highly anharmonic, largely in regards to tilting of AgBr$_6$ and BiBr$_6$ octahedra. Using an energy and temperature dependent phonon spectral function, we then show how the experimentally observed cubic-to-tetragonal phase transformation is caused by the collapse of a soft phonon branch. We finally reveal that the softness and anharmonicity of Cs$_2$AgBiBr$_6$ yield an ultra-low thermal conductivity, unexpected of high symmetry cubic structures.

cond-mat.mtrl-sci↗

Inverse pressure-induced Mott transition in TiPO$_4$

TiPO$_4$ shows interesting structural and magnetic properties as temperature and pressure are varied, such as a spin-Peierls phase transition and the development of incommensurate modulations of the lattice. Recently, high pressure experiments for TiPO$_4$ reported two new structural phases appearing at high pressures, the so-called phases IV and V [M. Bykov et al., Angew. Chem. Int. Ed. 55, 15053]. The latter was shown to include the first example of 5-fold O-coordinated P-atoms in an inorganic phosphate compound. In this work we characterize the electronic structure and other physical properties of these new phases by means of ab-initio calculations, and investigate the structural transition. We find that the appearance of phases IV and V coincides with a collapse of the Mott insulating gap and quenching of magnetism in phase III as pressure is applied. Remarkably, our calculations show that in the high pressure phase V, these features reappear, leading to an antiferromagnetic Mott insulating phase, with robust local moments.

cond-mat.str-el↗

High-pressure synthesis of ultraincompressible hard rhenium nitride pernitride Re$_{2}$(N$_{2}$)N$_{2}$ stable at ambient conditions

Here we report the synthesis of metallic, ultraincompressible (bulk modulus $K_{0}$ = 428(10) GPa) and very hard (nanoindentation hardness 36.7(8) GPa) rhenium (V) nitride pernitride Re$_{2}$(N$_{2}$)N$_{2}$. While the empirical chemical formula of the compound, ReN$_{2}$, is the same as for other known transition metals pernitrides, e.g. IrN$_{2}$, PtN$_{2}$, PdN$_{2}$ and OsN$_{2}$, its crystal chemistry is unique. The known pernitrides of transition metals consist of a metal in the oxidation state +IV and pernitride anions N$_{2}^{4-}$. ReN$_{2}$ contains both pernitride N$_{2}^{4-}$ and discrete N$^{3-}$ anions, which explains its exceptional properties. Moreover, in the original experimental synthesis of Re$_{2}$(N$_{2}$)N$_{2}$ performed in a laser-heated diamond anvil cell via a direct reaction between rhenium and nitrogen at pressures from 40 to 90 GPa we observed that the material was recoverable at ambient conditions. Consequently, we developed a route to scale up its synthesis through a reaction between rhenium and ammonium azide, NH$_{4}$N$_{3}$, in a large-volume press at 33 GPa. Our work resulted not only in a discovery of a novel material with unusual crystal chemistry and a set of properties attractive for potential applications, but also demonstrated a feasibility of surmounting conceptions common in material sciences.

cond-mat.mtrl-sci↗