arXiv subjects

Ilaria Zardo

Publications and source records attributed to Ilaria Zardo.

At least 19 recordsLinked to original sources

arXiv2026

Isolating the natural edges of bilayer graphene in gate-defined mesoscopic devices

We introduce a graphite-gated architecture for bilayer graphene devices in which the active device is completely isolated from the natural graphene edges. Using a single patterned graphite-gate layer, we realize a fully electrostatically defined Hall-bar. Longitudinal and Hall measurements reveal mesoscopic transport features, including Hall-effect quenching and magnetoresistance peaks associated with boundary scattering. The dependence of the mesoscopic features on the carrierdensity shows that the effective channel width increases with the Fermi level and the electrostatic confinement at the gate-defined boundaries, and indicates that the carriers scatter at the electrostatic boundary. Raman spectroscopy and Kelvin probe force microscopy suggest that this boundary is disordered due to the used fabrication methods. Comparably, the quantum mobility in a fieldeffect transistor fabricated with the same architecture is not limited by boundary scattering and the visibility of quantum oscillations down to 4 mT suggests a record value of 2.5 x 10^6 cm2/Vs.

cond-mat.mes-hall↗

arXiv2026

Thermal conductivity tuning of scalable nanopatterned silicon membranes measured with a three-probe method

Phononic silicon structures have emerged as an integrable and scalable nanosystem for tailoring thermal transport. However, their widespread adoption has been limited by their complex fabrication pathways. Alongside, the reliable characterization of thermal properties in suspended nanostructured films remains challenging, as thermal contact resistances often hinder the accuracy of measurements. In this work, we demonstrate a clear and controllable reduction of thermal conductivity in nanopatterned silicon membranes. A block copolymer self-assembly approach is employed to fabricate nanoholed silicon films with a pitch of 63 nm and hole diameters of 35 nm. Additionally, we introduce an extension of the three-probe technique that enables robust, quantitative, and spatially resolved thermal conductivity measurements in complex thin-film systems, accounting for thermal contact artifacts. The method is validated through measurements on unpatterned 40 nm-thick silicon thin films between 30 and 350 K, yielding a room-temperature thermal conductivity of 46.5 W/m.K. Finally, we further show that controlled etching of the nanoholes provides a powerful means to tune thermal transport in the overall studied temperature range, establishing hole etch depth control as an effective parameter in phononic silicon. Specifically, a fivefold reduction in thermal conductivity is achieved, reaching 7.3 W/m.K for fully etched-through membranes at room temperature.

cond-mat.mes-hall↗

arXiv2026

Direct observation of strain and confinement shaping the hole subbands of Ge quantum wells

Germanium-silicon-germanium (Ge/Si$_{x}$Ge$_{1-x}$) heterostructures have emerged as a promising platform for hole-spin quantum technologies and high-mobility electronics, where strain and quantum confinement strongly reshape the Ge valence bands. However, the momentum-resolved valence-band structure of buried strained Ge quantum wells has so far been inferred only indirectly. Here we use soft X-ray angle-resolved photoemission spectroscopy (SX-ARPES) to directly probe the electronic structure of strained Ge quantum wells embedded in SiGe barriers. We resolve strain-split and size-quantized valence subbands, determine their heavy-hole, light-hole and split-off composition, and measure the valence-band offset at the Ge/SiGe heterojunction. Comparison with ab initio calculations shows that an accurate description requires explicit inclusion of the confinement potential imposed by the SiGe barrier, which plays a decisive role in determining the dispersion, ordering and mixing of the hole states. Our results provide the first direct experimental picture of how strain and confinement determine the valence-band structure of Ge quantum wells, establishing a foundation for predictive modelling of hole-spin qubits and high-mobility devices based on group-IV heterostructures.

cond-mat.mtrl-sci↗

arXiv2026

Quantifying Strain and its Effect on Charge Transport in Ge/Si Core/Shell Nanowires

Strain engineering in semiconductor nanostructures offers a promising route to optimize electronic and optical properties for advanced quantum technologies. This study explores the relationship between core and shell thicknesses and strain distribution in Ge/Si core/shell nanowires, targeting their application as hosts for spin qubits. Nanowires were synthesized using an Au-catalyzed chemical vapor deposition technique, achieving control over core and shell dimensions. High-resolution transmission electron microscopy and elemental mapping confirmed structural integrity, while Geometric Phase Analysis and Raman spectroscopy provided quantitative insights into strain variations driven by core and shell dimensions. Furthermore, polarization resolved $μ$-Raman measurements allowed us to quantify the longitudinal and transverse phonon mode splitting as a function of strain in the Ge core. The strain dependent electronic properties were investigated by hole mobility measurements. Finally, we observe a record high hole mobility of 25,500 cm$^2$V$^{-1}$s$^{-1}$, underscoring the potential of these core/shell nanowire structures for the realization of high-fidelity spin qubits. Our findings highlight the critical role of geometry in strain tuning and provide valuable design guidelines for optimizing Ge/Si nanowires in scalable quantum device architectures.

cond-mat.mes-hall↗

arXiv2025

Low-loss frequency-tunable Josephson junction array cavities on Ge/SiGe heterostructures with a tapered etching approach

Ge/SiGe heterostructures represent a promising platform for hosting various quantum devices such as hole spin qubits and Andreev spin qubits. However, the compatibility of such heterostructures with high-quality-factor microwave superconducting cavities remains a challenge due to defects in the material stack. In this work, we present an approach to enhance the coherence of cavity modes on a reverse-graded Ge/SiGe heterostructure, which consists of etching the full $\sim 1.6~\mathrm{μm}$-thick Ge/SiGe stack down to its starting high-resistivity Si substrate, in order to pattern superconducting cavities directly on it. We engineer the mesa step to be tapered, so that it can be easily climbed by the superconducting cavities to reach the quantum devices potentially hosted in the Ge quantum well. Using this approach, we observe internal quality factors of $Q_\mathrm{i} \approx 10000-20000$ for high-impedance frequency-tunable Josephson junction array resonators, limited by the junctions' fabrication, and $Q_\mathrm{i} \approx 100000$ for $50~\mathrmΩ$ coplanar waveguide Nb lift-off resonators. These $Q_\mathrm{i}$ are preserved despite the overlap with the mesa structure in the climbing region, and are comparable to the ones obtained for identical resonators fabricated on a high-resistivity Si wafer reference. Thereby, this work paves a practical path toward superconductor-semiconductor hybrid devices, immediately applicable to emerging technologies on planar Ge.

quant-ph↗

arXiv2025

Bandgap Engineering On Demand in GaAsN Nanowires by Post-Growth HydrogennImplantation

Bandgap engineering in semiconductors is required for the development of photonic and optoelectronic devices with optimized absorption and emission energies. This is usually achieved by changing the chemical or structural composition during growth or by dynamically applying strain. Here, the bandgap in GaAsN nanowires grown on Si is increased post-growth by up to 460 meV in a reversible, tunable, and non-destructive manner through H implantation. Such a bandgap tunability is unattained in epilayers and enabled by relaxed strain requirements in nanowire heterostructures, which enables N concentrations of up to 4.2% in core-shell GaAs/GaAsN/GaAs nanowires resulting in a GaAsN bandgap as low as 0.97 eV. Using micro-photoluminescence measurements on individual nanowires, it is shown that the high bandgap energy of GaAs at 1.42 eV is restored by hydrogenation through formation of N-H complexes. By carefully optimizing the hydrogenation conditions, the photoluminescence efficiency increases by an order of magnitude. Moreover, by controlled thermal annealing, the large shift of the bandgap is not only made reversible, but also continuously tuned by breaking up N-H complexes in the hydrogenated GaAsN. Finally, local bandgap tuning by laser annealing is demonstrated, opening up new possibilities for developing novel, locally and energy-controlled quantum structures in GaAsN nanowires.

cond-mat.mtrl-sci↗

arXiv2025

Unraveling energy flow mechanisms in semiconductors by ultrafast spectroscopy: Germanium as a case study

Semiconductor materials are the foundation of modern electronics, and their functionality is dictated by the interactions between fundamental excitations occurring on (sub-)picosecond timescales. Using time-resolved Raman spectroscopy and transient reflectivity measurements, we shed light on the ultrafast dynamics in germanium. We observe an increase in the optical phonon temperature in the first few picoseconds, driven by the energy transfer from photoexcited holes, and the subsequent decay into acoustic phonons through anharmonic coupling. Moreover, the temperature, Raman frequency, and linewidth of this phonon mode show strikingly different decay dynamics. This difference was ascribed to the local thermal strain generated by the ultrafast excitation. We also observe Brillouin oscillations, given by a strain pulse traveling through germanium, whose damping is correlated to the optical phonon mode. These findings, supported by density functional theory and molecular dynamics simulations, provide a better understanding of the energy dissipation mechanisms in semiconductors.

cond-mat.mtrl-sci↗

arXiv2025

Phonon interference effects in GaAs-GaP superlattice nanowires

Fine-tuning the functional properties of nanomaterials is crucial for technological applications. Superlattices, characterized by periodic repetitions of two or more materials in different dimensions, have emerged as a promising area of investigation. We present a study of the phonon interference effect on thermal transport in GaAs-GaP superlattice nanowires with sharp interfaces between the GaAs and GaP layers, as confirmed by high-resolution transmission electron microscopy. We performed thermal conductivity measurements using the so-called thermal bridge method on superlattice nanowires with a period varying from 4.8 to 23.3 nm. The measurements showed a minimum of the thermal conductivity as a function of superlattice period up to room temperature, that we interpreted as an indication of the crossover from coherent to incoherent thermal transport. Notably, this effect is not destroyed by surface boundary or by phonon-phonon scattering, as the crossover trend is also observed at room temperature. Our results were corroborated by both ab initio lattice dynamics and semiclassical nonequilibrium molecular dynamics calculations. These findings provide insights into the wave-like and particle-like transport of phonons in superlattice nanowires and demonstrate the potential for engineering thermal properties through precise control of the superlattice structure.

cond-mat.mes-hall↗

arXiv2024

Impact of surface treatments on the transport properties of germanium 2DHGs

Holes in planar germanium (Ge) heterostructures show promise for quantum applications, particularly in superconducting and spin qubits, due to strong spin-orbit interaction, low effective mass, and absence of valley degeneracies. However, charge traps cause issues such as gate hysteresis and charge noise. This study examines the effect of surface treatments on the accumulation behaviour and transport properties of Ge-based two dimensional hole gases (2DHGs). Oxygen plasma treatment reduces conduction in a setting without applied top-gate voltage and improves the mobility and lowers the percolation density, while hydrofluoric acid (HF) etching provides no benefit. The results suggest that interface traps from the partially oxidised silicon (Si) cap pin the Fermi level, and that oxygen plasma reduces the trap density by fully oxidising the Si cap. Therefore, optimising surface treatments is crucial for minimising the charge traps and thereby enhancing the device performance.

cond-mat.mes-hall↗

arXiv2024

A backgate for enhanced tunability of holes in planar germanium

Planar semiconductor heterostructures offer versatile device designs and are promising candidates for scalable quantum computing. Notably, heterostructures based on strained germanium have been extensively studied in recent years, with emphasis on their strong and tunable spin-orbit interaction, low effective mass, and high hole mobility. However, planar systems are still limited by the fact that the shape of the confinement potential is directly related to the density. In this work, we present the successful implementation of a backgate for a planar germanium heterostructure. The backgate, in combination with a topgate, enables independent control over the density and the electric field, which determines important state properties such as the effective mass, the $g$-factor and the quantum lifetime. This unparalleled degree of control paves the way towards engineering qubit properties and facilitates the targetted tuning of bilayer quantum wells, which promise denser qubit packing.

cond-mat.mes-hall↗

arXiv2024

High quality CVD deposition of Ge layers for Ge/SiGe Quantum Well heterostructures

A great deal of interest is directed nowadays towards the development of innovative technologies in the field of quantum information and quantum computing, with emphasis on obtaining reliable qubits as building blocks. The realization of highly stable, controllable and accessible hole spin qubits is strongly dependent on the quality of the materials hosting them. Ultra-clean germanium/silicon-germanium heterostructures have been predicted and proven to be promising candidates and due to their large scalability potential, they are opening the door towards the development of realistic and reliable solid state, all-electric, silicon-based quantum computers. In order to obtain ultra-clean germanium/silicon-germanium heterostructures in a reverse grading approach, the understanding and control over the growth of Ge virtual substrates and thin films is key. Here, we present a detailed study on the growth kinetics, morphology, and crystal quality of Ge thin films grown via chemical vapor deposition by investigating the effects of growth temperature, partial pressure of the precursor gas and the use of Ar or H2 atmosphere. The presence of carrier gases catalyzes the deposition rate and induces a smoothening on the surfaces of films grown at low temperatures. We investigated the surface roughness and threading dislocation density as a function of deposition temperature, partial pressure and gas mixture. Ge thin films deposited by diluting GeH4 in Ar or H2 were employed as virtual substrates for the growth of full Ge/SiGe QW heterostructures. Their defect density was analyzed and their electric transport properties were characterized via Hall measurements. Similar results were obtained for both carrier gases used.

cond-mat.mtrl-sci↗

arXiv2023

GaAs/GaP Superlattice Nanowires for Tailoring Phononic Properties at the Nanoscale: Implications for Thermal Engineering

The possibility to tune the functional properties of nanomaterials is key to their technological applications. Superlattices, i.e., periodic repetitions of two or more materials in different dimensions are being explored for their potential as materials with tailor-made properties. Meanwhile, nanowires offer a myriad of possibilities to engineer systems at the nanoscale, as well as to combine materials which cannot be put together in conventional heterostructures due to the lattice mismatch. In this work, we investigate GaAs/GaP superlattices embedded in GaP nanowires and demonstrate the tunability of their phononic and optoelectronic properties by inelastic light scattering experiments corroborated by ab initio calculations. We observe clear modifications in the dispersion relation for both acoustic and optical phonons in the superlattices nanowires. We find that by controlling the superlattice periodicity we can achieve tunability of the phonon frequencies. We also performed wavelength-dependent Raman microscopy on GaAs/GaP superlattice nanowires and our results indicate a reduction in the electronic bandgap in the superlattice compared to the bulk counterpart. All our experimental results are rationalized with the help of ab initio density functional perturbation theory (DFPT) calculations. This work sheds fresh insights into how material engineering at the nanoscale can tailor phonon dispersion and open pathways for thermal engineering.

cond-mat.mtrl-sci↗

arXiv2023

In-plane thermal diffusivity determination using beam-offset frequency-domain thermoreflectance with a one-dimensional optical heat source

We present an innovative contactless method suitable to study in-plane thermal transport based on beam-offset frequency-domain thermoreflectance using a one-dimensional heat source with uniform power distribution. Using a one-dimensional heat source provides a number of advantages as compared to point-like heat sources, as typically used in time- and frequency-domain thermoreflectance experiments, just to name a few: (i) it leads to a slower spatial decay of the temperature field in the direction perpendicular to the line-shaped heat source, allowing to probe the temperature field at larger distances from the heater, hence, enhancing the sensitivity to in-plane thermal transport; (ii) the frequency range of interest is typically < 100 kHz. This rather low frequency range is convenient regarding the cost of the required excitation laser system but, most importantly, it allows the study of materials without the presence of a metallic transducer with almost no influence of the finite optical penetration depth of the pump and probe beams on the thermal phase lag, which arises from the large thermal penetration depth imposed by the used frequency range. We also show that for the case of a harmonic thermal excitation source, the phase lag between the thermal excitation and thermal response of the sample exhibits a linear dependence with their spatial offset, where the slope is proportional to the inverse of the thermal diffusivity of the material. We demonstrate the applicability of this method to the cases of: (i) suspended thin films of Si and PDPP4T, (ii) Bi bulk samples, and (iii) Si, glass, and highly-oriented pyrollitic graphite (HOPG) bulk samples with a thin metallic transducer. Finally, we also show that it is possible to study in-plane heat transport on substrates with rather low thermal diffusivity, e.g., glass, even using a metallic transducer.

cond-mat.mtrl-sci↗

arXiv2022

Phonon transport across twin boundaries and twin superlattices

Crystal phase engineering gives access to new types of superlattices where, rather than different materials, different crystal phases of the same material are juxtaposed. Here, by means of atomistic nonequilibrium molecular dynamics calculations, we study to what extent these periodic systems can be used to alter phonon transport, similarly to what has been predicted and observed in conventional superlattices based on heterointerfaces. We focus on twin superlattices in GaAs and InAs and highlight the existence of two different transport regimes: in one each interface behaves like an independent scatterer; in the other, a segment with a sufficiently large number of closely-spaced interfaces, is seen by propagating phonons as a metamaterial with its own thermal properties.

cond-mat.mes-hall↗

arXiv2021

Low charge-noise nitrogen-vacancy centers in diamond created using laser writing with a solid-immersion lens

We report on pulsed-laser induced generation of nitrogen-vacancy (NV) centers in diamond facilitated by a solid-immersion lens (SIL). The SIL enables laser writing at energies as low as 5.8 nJ per pulse and allows vacancies to be formed close to a diamond surface without inducing surface graphitization. We operate in the previously unexplored regime where lattice vacancies are created following tunneling breakdown rather than multiphoton ionization. We present three samples in which NV-center arrays were laser-written at distances between ~1 $μ$m and 40 $μ$m from a diamond surface, all presenting narrow distributions of optical linewidths with means between 62.1 MHz and 74.5 MHz. The linewidths include the effect of long-term spectral diffusion induced by a 532 nm repump laser for charge-state stabilization, thereby emphasizing the particularly low charge-noise environment of the created color centers. Such high-quality NV centers are excellent candidates for practical applications employing two-photon quantum interference with separate NV centers. Finally, we propose a model for disentangling power broadening from inhomogeneous broadening in the NV center optical linewidth.

physics.optics↗

arXiv2021

Spatially mapping the thermal conductivity of graphene by an opto-thermal method

Mapping the thermal transport properties of materials at the nanoscale is of critical importance for optimizing heat conduction in nanoscale devices. Several methods to determine the thermal conductivity of materials have been developed, most of them yielding an average value across the sample, thereby disregarding the role of local variations. Here, we present a method for the spatially-resolved assessment of the thermal conductivity of suspended graphene by using a combination of confocal Raman thermometry and a finite-element calculations-based fitting procedure. We demonstrate the working principle of our method by extracting the two-dimensional thermal conductivity map of one pristine suspended single-layer graphene sheet and one irradiated using helium ions. Our method paves the way for spatially resolving the thermal conductivity of other types of layered materials. This is particularly relevant for the design and engineering of nanoscale thermal circuits (e.g. thermal diodes).

cond-mat.mes-hall↗

arXiv2021

Probing Lattice Dynamics and Electronic Resonances in Hexagonal Ge and SixGe1-x Alloys in Nanowires by Raman Spectroscopy

Recent advances in nanowire synthesis have enabled the realization of crystal phases that in bulk are attainable only under extreme conditions, i.e. high temperature and/or high pressure. For group IV semiconductors this means access to hexagonal-phase SixGe1-x nanostructures (with a 2H type of symmetry), which are predicted to have a direct band gap for x up to 0.5 - 0.6 and would allow the realization of easily processable optoelectronic devices. Exploiting the quasi-perfect lattice matching between GaAs and Ge, we synthesized hexagonal phase GaAs-Ge and GaAs-SixGe1-x core-shell nanowires with x up to 0.59. By combining position-, polarization- and excitation wavelength-dependent u-Raman spectroscopy studies with first-principles calculations, we explore the full lattice dynamics of these materials. In particular, by obtaining frequency-composition calibration curves for the phonon modes, investigating the dependence of the phononic modes on the position along the nanowire, and exploiting resonant Raman conditions to unveil the coupling between lattice vibrations and electronic transitions, we lay the grounds for a deep understanding of the phononic properties of 2H-SixGe1-x nanostructured alloys and of their relationship with crystal quality, chemical composition, and electronic band structure.

cond-mat.mtrl-sci↗

arXiv2021

Nanowires for heat conversion

This review focuses on the investigation and enhancement of the thermoelectric properties of semiconducting nanowires (NWs). NWs are nanostructures with typical diameters between few to hundreds of nm and length of few to several microns, exhibiting a high surface-to-volume ratio. Nowadays an extraordinary control over their growth has been achieved, enabling also the integration of different types of heterostructures, which can lead to the engineering of the functional properties of the NWs. In this review, we discuss all concepts which have been presented and achieved so far for the improvements of the thermoelectric performances of semiconducting NWs. Furthermore, we present a brief survey of the experimental methods which enable the investigation of the thermoelectric properties of these nanostructures.

cond-mat.mes-hall↗