Quantifying Strain and its Effect on Charge Transport in Ge/Si Core/Shell Nanowires

Aswathi K. Sivan; Nicolas Forrer; Aakash Shandilya; Yang Liu; Janica Böhler; Alexander Vogel; Arianna Nigro; Pierre Chevalier Kwon; Artemii Efimov; Ilya Golokolenov; Gerard Gadea; Riccardo Rurali; Andreas Baumgartner; Dominik M. Zumbühl; Ilaria Zardo

arXiv · 2602.14546

Quantifying Strain and its Effect on Charge Transport in Ge/Si Core/Shell Nanowires

Aswathi K. Sivan·Nicolas Forrer·Aakash Shandilya·Yang Liu·Janica Böhler·Alexander Vogel·Arianna Nigro·Pierre Chevalier Kwon·Artemii Efimov·Ilya Golokolenov·Gerard Gadea·Riccardo Rurali·Andreas Baumgartner·Dominik M. Zumbühl·Ilaria Zardo

View original source ↗Read source document ↗Export metadata ↓

Abstract

Strain engineering in semiconductor nanostructures offers a promising route to optimize electronic and optical properties for advanced quantum technologies. This study explores the relationship between core and shell thicknesses and strain distribution in Ge/Si core/shell nanowires, targeting their application as hosts for spin qubits. Nanowires were synthesized using an Au-catalyzed chemical vapor deposition technique, achieving control over core and shell dimensions. High-resolution transmission electron microscopy and elemental mapping confirmed structural integrity, while Geometric Phase Analysis and Raman spectroscopy provided quantitative insights into strain variations driven by core and shell dimensions. Furthermore, polarization resolved $\mu$-Raman measurements allowed us to quantify the longitudinal and transverse phonon mode splitting as a function of strain in the Ge core. The strain dependent electronic properties were investigated by hole mobility measurements. Finally, we observe a record high hole mobility of 25,500 cm$^2$V$^{-1}$s$^{-1}$, underscoring the potential of these core/shell nanowire structures for the realization of high-fidelity spin qubits. Our findings highlight the critical role of geometry in strain tuning and provide valuable design guidelines for optimizing Ge/Si nanowires in scalable quantum device architectures.

Explore related subjects

cond-mat.mes-hall

Keep this discovery

BibTeX RIS

Aswathi K. Sivan, Nicolas Forrer, Aakash Shandilya, Yang Liu, Janica Böhler, Alexander Vogel, Arianna Nigro, Pierre Chevalier Kwon, Artemii Efimov, Ilya Golokolenov, Gerard Gadea, Riccardo Rurali, Andreas Baumgartner, Dominik M. Zumbühl, Ilaria Zardo. 2026-02-16. Quantifying Strain and its Effect on Charge Transport in Ge/Si Core/Shell Nanowires. https://arxiv.org/abs/2602.14546

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Emergence of spin-orbit coupling among spin, atomic orbital, and Bloch dynamics in Janus double-transition-metal MXenes

We found a spin-orbit coupling to cause a simultaneous correlation among three degrees of freedom, the electronic spin, orbital, and Bloch dynamics in an investigation into the electronic structure of Janus double-transition-metal MXenes, Mo$_2$HfC$_2$OS and W$_2$HfC$_2$OS. In this paper, it is also revealed that the spin-orbit coupling causes a staggered spin configuration with a trigonal pattern around the $\Gamma$ point near the insulating gap. We developed a reduced Hamiltonian describing the electronic states and show that the spin-orbit coupling cannot be equated with conventional forms for a single electron in solids, LS, Rashba, and Dresselhaus couplings, even in the approximation under the low-energy and small wave number condition. Because of the intrinsic shape of the conduction band, a trigonally alternating spin-momentum locking emerges with the spin axis perpendicular to the layer plane. The theoretical analysis shows that these Janus materials can provide a platform for exploring the spin-related phenomena due to the trigonal spin-momentum locking other than Rashba and Dresselhaus types.

cond-mat.mes-hall↗

arXiv2026

A substrate booster for P-type 2D ferromagnetic semiconductor

Spin transistors with its both charge and spin properties tuned via electrostatic gating are believed capable for widespread use, which however have proven challenging due to the extreme rareness of their physical base -- magnetic semiconductors. The latter are limited within very few systems including diluted magnetic semiconductors (DMS) and two-dimensional ferromagnetic semiconductors (2D-FMS), and known to suffer from inadequate gate-tunability of their electric and/or magnetic properties. Here, we show a substrate engineering paradigm by interfacing few-layered Cr$_{2}$Ge$_{2}$Te$_{6}$ (FL-CGT) with an antiferromagnetic insulator CrOCl. Owing to the subtle interfacial charge transfer couplings, CGT can be drastically turned from an ambipolar semiconductor into a high performance P-type semiconductor. When cooled below the Curie temperature, the ON-OFF ratio in such substrate-boosted FMS field-effect transistor (FET) reaches 10$^{5}$ with its coercive field $H_{c}$ of magnetic hysteresis loop tunable by a factor of more than 200$\%$, enabling {gate-assisted magnetic switching in the prototype semiconducting spin transistor architecture}. A crossover from critical power-law scaling to a dual power-law behaviour under heavy hole doping was further observed. Our findings {signify} an efficient interfacial charge transfer and electrically modulated magnetic anisotropy energy supported by calculations. This high performance P-type FMS-FET system suggests that active substrate-boosting paradigm might be a powerful path for the investigation of future gate-tunable spintronic devices.

cond-mat.mes-hall↗

arXiv2026

In-plane magnetic field control of anomalous Hall response enabled by magnetic anisotropy engineering

Engineering magnetic anisotropy provides a powerful route to control magnetization orientation and unlock emerging functionalities in opto-spintronic and current-driven devices. Beyond its role in magnetization reversal, the effective anisotropy can strongly influence the magnetotransport response, offering an additional degree of freedom to tune new device functionalities. In this work, we report a magnetotransport study of a ferrimagnetic [Tb/Co]$_{\times 5}$ multilayer grown with a Tb thickness gradient, whose wedge-shaped tilts the uniaxial anisotropy axis slightly away from the film normal. Anomalous Hall resistivity measurements from 80 K to 300 K reveal a spin reorientation transition, while the angular dependence of the magnetotransport responses exposes the crucial role of the tilted anisotropy. A simplified macrospin model reproduces the full angular response across the transition and shows that the observed anomalous Hall effect when the in-plane magnetic field is applied originates from the tilt of the uniaxial anisotropy axis, which supplies a built-in symmetry-breaking mechanism, enabling in-plane field control over the out-of-plane anomalous Hall response, sign included. These findings establish tilted magnetic anisotropy as a promising route toward Hall effect-based sensor applications and highlight Tb/Co multilayers as a versatile platform for anisotropy-engineered spintronic devices.

cond-mat.mes-hall↗