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Ilya N. Krivorotov

Publications and source records attributed to Ilya N. Krivorotov.

At least 19 recordsLinked to original sources

A CMOS+X Spiking Neuron With On-Chip Machine Learning

We present the design and numerical simulation of a spiking neuron in a proof-of-concept model of on-chip machine learning. Built within the CMOS+X framework, the spiking neuron consists of an NMOS transistor combined with a magnetic tunnel junction (MTJ). This NMOS+MTJ unit, when simulated in the industry-standard circuit simulation software ``LTspice'', reproduces multiple functions of a biological neuron, including threshold spiking, latency, refractory periods, synaptic integration, and inhibition. These behaviors arise from the intrinsic magnetization dynamics of the MTJ and do not require any additional control circuitry. By interconnecting the NMOS+MTJ neurons, we construct a model of an analog multilayer network that learns through spike-timing-dependent weight updates derived from a gradient-descent rule, with both training and inference modeled in the analog domain. The simulated network demonstrates spike propagation and successful training on the XOR task under the modeled conditions.

physics.app-ph↗

Radio-frequency assisted switching in perpendicular magnetic tunnel junctions

Spin-transfer torque magnetic random-access memory (STT-MRAM) relies on nanoscale magnetic tunnel junctions (MTJs) as its fundamental building blocks. Next-generation STT-MRAM requires strategies that simultaneously improve switching energy efficiency and device endurance. Here, we present the first study of perpendicular STT-MRAM writing assisted by radio-frequency (RF) spin torque. We show that applying a small-amplitude RF pulse prior to a direct-current (DC) writing pulse enhances the MTJ switching probability, with the efficiency gain increasing at lower RF frequencies. This RF+DC writing scheme enables shorter DC pulses, thereby improving device endurance. Analytical and numerical modeling qualitatively reproduces the experimental trends, while quantitative discrepancies indicate that realistic MTJ properties beyond idealized models play an important role in RF-assisted switching.

cond-mat.mes-hall↗

High-efficiency Pt$_{75}$Au$_{25}$-based spintronic terahertz emitters

Spintronic terahertz emitters (STEs) generate broadband THz radiation via ultrafast spin-charge conversion in magnetic multilayers, offering spectral coverage beyond that of photoconductive antennas and nonlinear optical crystals. Here, we demonstrate a new type of STE based on PtxAu100-x alloy that achieves significantly higher THz output power than widely used Pt-based devices. Alloy composition and layer thickness tuning yield Pt75Au25 as the optimal alloy providing a 30 % increase in THz power in CoFeB/Pt75Au25 bilayer STEs compared to the optimized CoFeB/Pt reference STE. In W/CoFeB/Pt$_{75}$Au$_{25}$ trilayer STEs, we observe a 10 % higher THz power than in the optimized W/CoFeB/Pt trilayer. The STE efficiency is reduced upon annealing for both Pt$_{75}$Au$_{25}$- and Pt-based STEs due to formation of interfacial alloys. Our results establish Pt$_{75}$Au$_{25}$ as a promising platform for high-performance STEs, where its giant spin Hall effect significantly enhances efficiency over conventional Pt-based devices.

cond-mat.mtrl-sci↗

Spin wave eigenmodes in nanoscale magnetic tunnel junctions with perpendicular magnetic anisotropy

Magnetic tunnel junctions (MTJs) are key enablers of spintronic technologies used in a variety of applications including information storage, microwave generation and detection, as well as unconventional computing. Here, we present experimental and theoretical studies of quantized spin wave eigenmodes in perpendicular MTJs focusing on a coupled magnetization dynamics in the free (FL) and reference (RL) layers of the MTJ, where the RL is a synthetic antiferromagnet (SAF). Spin-torque ferromagnetic resonance (ST-FMR) measurements reveal excitation of two spin wave eigenmodes in response to applied microwave current. These modes show opposite frequency shifts as a function of out-of-plane magnetic field. Our micromagnetic simulations accurately reproduce the dependence of the mode frequencies on magnetic field and reveal the spatial profiles of the excitations in the FL and RL. The FL and RL modes generate rectified voltage signals of opposite polarity, which makes this device a promising candidate for a tunable dual-frequency microwave signal detector. The simulations show that weak interlayer exchange coupling within the SAF enhances the mode amplitudes. We also calculate the response of the detector as a function of in-plane magnetic field bias and find that its sensitivity significantly increases with increasing field. We experimentally confirm this prediction via ST-FMR measurements as a function of in-plane magnetic field. Our results provide deeper understanding of quantized spin wave eigenmodes in nanoscale MTJs with perpendicular magnetic anisotropy and demonstrate the potential of these devices for frequency-selective dual-channel microwave signal detectors.

cond-mat.mes-hall↗

Self-generated spin-orbit torque driven by anomalous Hall current

Spin-orbit torques enable energy-efficient manipulation of magnetization by electric current and hold promise for applications ranging from nonvolatile memory to neuromorphic computing. Here we report the discovery of a giant spin-orbit torque induced by anomalous Hall current in ferromagnetic conductors. This anomalous Hall torque is self-generated as it acts on magnetization of the ferromagnet that engenders the torque. The magnitude of the anomalous Hall torque is sufficiently large to fully negate magnetic damping of the ferromagnet, which allows us to implement a microwave spin torque nano-oscillator driven by this torque. The peculiar angular symmetry of the anomalous Hall torque favors its use over the conventional spin Hall torque in coupled nano-oscillator arrays. The universal character of the anomalous Hall torque makes it an integral part of the description of coupled spin transport and magnetization dynamics in magnetic nanostructures.

cond-mat.mes-hall↗

Easy-plane spin Hall oscillator

Spin Hall oscillators (SHOs) based on bilayers of a ferromagnet (FM) and a non-magnetic heavy metal (HM) are electrically tunable nanoscale microwave signal generators. Achieving high output power in SHOs requires driving large-amplitude magnetization dynamics by a direct spin Hall current. The maximum possible amplitude of such oscillations with the precession cone angle nearing $90^\circ$ is predicted for FM layers with easy-plane magnetic anisotropy and spin Hall current polarization perpendicular to the easy plane. While many FMs exhibit natural easy-plane anisotropy in the FM film plane, the spin Hall current in a HM|FM bilayer is polarized in this plane and thus cannot drive large-amplitude magneto-dynamics. Here we present a new type of SHO engineered to have the easy-plane anisotropy oriented normal to the film plane, enabling large-amplitude easy-plane dynamics driven by spin Hall current. Our experiments and micromagnetic simulations demonstrate that the desired easy-plane anisotropy can be achieved by tuning the magnetic shape anisotropy and perpendicular magnetic anisotropy in a nanowire SHO, leading to a significant enhancement of the generated microwave power. The easy-plane SHO experimentally demonstrated here is an ideal candidate for realization of a spintronic spiking neuron. Our results provide a new approach to design of high-power SHOs for wireless communications, neuromorphic computing, and microwave assisted magnetic recording.

cond-mat.mes-hall↗

Parametric resonance of spin waves in ferromagnetic nanowires tuned by spin Hall torque

We present a joint experimental and theoretical study of parametric resonance of spin wave eigenmodes in Ni$_{80}$Fe$_{20}$/Pt bilayer nanowires. Using electrically detected magnetic resonance, we measure the spectrum of spin wave eigenmodes in transversely magnetized nanowires and study parametric excitation of these eigenmodes by a microwave magnetic field. We also develop an analytical theory of spin wave eigenmodes and their parametric excitation in the nanowire geometry that takes into account magnetic dilution at the nanowire edges. We measure tuning of the parametric resonance threshold by antidamping spin Hall torque from a direct current for the edge and bulk eigenmodes, which allows us to independently evaluate frequency, damping and ellipticity of the modes. We find good agreement between theory and experiment for parametric resonance of the bulk eigenmodes but significant discrepancies arise for the edge modes. The data reveals that ellipticity of the edge modes is significantly lower than expected, which can be attributed to strong modification of magnetism at the nanowire edges. Our work demonstrates that parametric resonance of spin wave eigenmodes is a sensitive probe of magnetic properties at edges of thin-film nanomagnets.

cond-mat.mes-hall↗

Dimensional crossover in spin Hall oscillators

Auto-oscillations of magnetization driven by direct spin current have been previously observed in multiple quasi-zero-dimensional (0D) ferromagnetic systems such as nanomagnets and nanocontacts. Recently, it was shown that pure spin Hall current can excite coherent auto-oscillatory dynamics in quasi-one-dimensional (1D) ferromagnetic nanowires but not in quasi-two-dimensional (2D) ferromagnetic films. Here we study the 1D to 2D dimensional crossover of current-driven magnetization dynamics in wire-based Pt/$\mathrm{Ni}_{80}\mathrm{Fe}_{20}$ bilayer spin Hall oscillators via varying the wire width. We find that increasing the wire width results in an increase of the number of excited auto-oscillatory modes accompanied by a decrease of the amplitude and coherence of each mode. We also observe a crossover from a hard to a soft onset of the auto-oscillations with increasing the wire width. The amplitude of auto-oscillations rapidly decreases with increasing temperature suggesting that interactions of the phase-coherent auto-oscillatory modes with incoherent thermal magnons plays an important role in suppression of the auto-oscillatory dynamics. Our measurements set the upper limit on the dimensions of an individual spin Hall oscillator and elucidate the mechanisms leading to suppression of coherent auto-oscillations with increasing oscillator size.

cond-mat.mes-hall↗

Spin-momentum locking induced non-local voltage in topological insulator nanowire

The momentum and spin of charge carriers in the topological insulators are constrained to be perpendicular to each other due to the strong spin-orbit coupling. We have investigated this unique spin-momentum locking property in Sb2Te3 topological insulator nanowires by injecting spin-polarized electrons through magnetic tunnel junction electrodes. Non-local voltage measurements exhibit a symmetry with respect to the magnetic field applied perpendicular to the nanowire channel, which is remarkably different from that of a non-local measurement in a channel that lacks spin-momentum locking. In stark contrast to conventional non-local spin valves, simultaneous reversal of magnetic moments of all magnetic contacts to the Sb2Te3 nanowire alters the non-local voltage. This unusual symmetry is a clear signature of the spin-momentum locking in the Sb2Te3 nanowire surface states.

cond-mat.mes-hall↗

Bias current dependence of superconducting transition temperature in superconducting spin valve nanowires

Competition between superconducting and ferromagnetic ordering at interfaces between ferromagnets (F) and superconductors (S) gives rise to several proximity effects such as odd-triplet superconductivity and spin-polarized supercurrents. A prominent example of an S/F proximity effect is the spin switch effect (SSE) observed in S/F/N/F superconducting spin-valve multilayers, in which the superconducting transition temperature T$_c$ is controlled by the angle $ϕ$ between the magnetic moments of the F layers separated by a nonmagnetic metallic spacer N. Here we present an experimental study of SSE in Nb/Co/Cu/Co/CoO$_x$ nanowires measured as a function of bias current flowing in the plane of the layers. These measurements reveal an unexpected dependence of T$_c(ϕ)$ on the bias current: T$_c(π)$--T$_c(0)$ changes sign with increasing current bias. We attribute the origin of this bias dependence of the SSE to a spin Hall current flowing perpendicular to the plane of the multilayer, which suppresses T$_c$ of the multilayer. The bias dependence of SSE can be important for hybrid F/S devices such as those used in cryogenic memory for superconducting computers as device dimensions are scaled down to the nanometer length scale.

cond-mat.supr-con↗

Thermally driven two-magnet nano-oscillator with large spin-charge conversion

Next-generation spintronic applications require material properties that can be hardly met by one material candidate. Here we demonstrate that by combining insulating and metallic magnets, enhanced spin-charge conversion and energy-efficient thermal spin currents can be realized. We develop a nanowire device consisting of an yttrium iron garnet and permalloy bi-layer. An interfacial temperature gradient drives the nanowire magnetization into auto-oscillations at gigahertz frequencies. Interfacial spin coupling and magnetoresistance of the permalloy layer translate spin dynamics into sizable microwave signals. The results show prospect for energy-efficient spintronic devices and present an experimental realization of magnon condensation in a heterogeneous magnetic system.

cond-mat.mes-hall↗

Immunity of nanoscale magnetic tunnel junctions to ionizing radiation

Spin transfer torque magnetic random access memory (STT-MRAM) is a promising candidate for next generation memory as it is non-volatile, fast, and has unlimited endurance. Another important aspect of STT-MRAM is that its core component, the nanoscale magnetic tunneling junction (MTJ), is thought to be radiation hard, making it attractive for space and nuclear technology applications. However, studies of the effects of high doses of ionizing radiation on STT-MRAM writing process are lacking. Here we report measurements of the impact of high doses of gamma and neutron radiation on nanoscale MTJs with perpendicular magnetic anistropy used in STT-MRAM. We characterize the tunneling magnetoresistance, the magnetic field switching, and the current-induced switching before and after irradiation. Our results demonstrate that all these key properties of nanoscale MTJs relevant to STT-MRAM applications are robust against ionizing radiation. Additionally, we perform experiments on thermally driven stochastic switching in the gamma ray environment. These results indicate that nanoscale MTJs are promising building blocks for radiation-hard non-von Neumann computing.

physics.app-ph↗

Giant magnetoresistance amplifier for spin-orbit torque nano-oscillators

Spin-orbit torque nano-oscillators based on bilayers of ferromagnetic (FM) and nonmagnetic (NM) metals are ultra-compact current-controlled microwave signal sources. They serve as a convenient testbed for studies of spin-orbit torque physics and are attractive for practical applications such as microwave assisted magnetic recording, neuromorphic computing, and chip-to-chip wireless communications. However, a major drawback of these devices is low output microwave power arising from the relatively small anisotropic magnetoresistance (AMR) of the FM layer. Here we experimentally show that the output power of a spin-orbit torque nano-oscillator can be enhanced by nearly three orders of magnitude without compromising its structural simplicity. Addition of a FM reference layer to the oscillator allows us to employ current-in-plane giant magnetoresistance (CIP GMR) to boost the output power of the device. This enhancement of the output power is a result of both large magnitude of GMR compared to that of AMR and different angular dependences of GMR and AMR. Our results pave the way for practical applications of spin-orbit torque nano-oscillators.

cond-mat.mes-hall↗

Magnetization reversal driven by low dimensional chaos in a nanoscale ferromagnet

Energy-efficient switching of magnetization is a central problem in nonvolatile magnetic storage and magnetic neuromorphic computing. In the past two decades, several efficient methods of magnetic switching were demonstrated including spin torque, magneto-electric, and microwave-assisted switching mechanisms. Here we report the discovery of a new mechanism giving rise to magnetic switching. We experimentally show that low-dimensional magnetic chaos induced by alternating spin torque can strongly increase the rate of thermally-activated magnetic switching in a nanoscale ferromagnet. This mechanism exhibits a well-pronounced threshold character in spin torque amplitude and its efficiency increases with decreasing spin torque frequency. We present analytical and numerical calculations that quantitatively explain these experimental findings and reveal the key role played by low-dimensional magnetic chaos near saddle equilibria in enhancement of the switching rate. Our work unveils an important interplay between chaos and stochasticity in the energy assisted switching of magnetic nanosystems and paves the way towards improved energy efficiency of spin torque memory and logic.

cond-mat.mes-hall↗

Spintronic nano-scale harvester of broadband microwave energy

The harvesting of ambient radio-frequency (RF) energy is an attractive and clean way to realize the idea of self-powered electronics. Here we present a design for a microwave energy harvester based on a nanoscale spintronic diode (NSD). This diode contains a magnetic tunnel junction with a canted magnetization of the free layer, and can convert RF energy over the frequency range from 100 MHz to 1.2 GHz into DC electric voltage. An attractive property of the developed NSD is the generation of an almost constant DC voltage in a wide range of frequencies of the external RF signals. We further show that the developed NSD provides sufficient DC voltage to power a low-power nanodevice - a black phosphorus photo-sensor. Our results demonstrate that the developed NSD could pave the way for using spintronic detectors as building blocks for self-powered nano-systems, such as implantable biomedical devices, wireless sensors, and portable electronics.

physics.app-ph↗

Parametric resonance of magnetization excited by electric field

Manipulation of magnetization by electric field is a central goal of spintronics because it enables energy-efficient operation of spin-based devices. Spin wave devices are promising candidates for low-power information processing but a method for energy-efficient excitation of short-wavelength spin waves has been lacking. Here we show that spin waves in nanoscale magnetic tunnel junctions can be generated via parametric resonance induced by electric field. Parametric excitation of magnetization is a versatile method of short-wavelength spin wave generation, and thus our results pave the way towards energy-efficient nanomagnonic devices.

cond-mat.mes-hall↗

Nanowire Spin Torque Oscillator Driven by Spin Orbit Torques

Spin torque from spin current applied to a nanoscale region of a ferromagnet can act as negative magnetic damping and thereby excite self-oscillations of its magnetization. In contrast, spin torque uniformly applied to the magnetization of an extended ferromagnetic film does not generate self-oscillatory magnetic dynamics but leads to reduction of the saturation magnetization. Here we report studies of the effect of spin torque on a system of intermediate dimensionality - a ferromagnetic nanowire. We observe coherent self-oscillations of magnetization in a ferromagnetic nanowire serving as the active region of a spin torque oscillator driven by spin orbit torques. Our work demonstrates that magnetization self-oscillations can be excited in a one-dimensional magnetic system and that dimensions of the active region of spin torque oscillators can be extended beyond the nanometer length scale.

cond-mat.mes-hall↗

Giant spin-torque diode sensitivity at low input power in the absence of bias magnetic field

Microwave detectors based on the spin-transfer torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts, which cannot operate at low input power. Here, we demonstrate nanoscale microwave detectors exhibiting record-high detection sensitivity of 75400 mV mW$^{-1}$ at room temperature, without any external bias fields, for input microwave power down to 10 nW. This sensitivity is 20x and 6x larger than state-of-the-art Schottky diode detectors (3800 mV mW$^{-1}$) and existing spintronic diodes with >1000 Oe magnetic bias (12000 mV mW$^{-1}$), respectively. Micromagnetic simulations supported by microwave emission measurements reveal the essential role of the injection locking to achieve this sensitivity performance. The results enable dramatic improvements in the design of low input power microwave detectors, with wide-ranging applications in telecommunications, radars, and smart networks.

cond-mat.mes-hall↗