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Irene D'Amico

Publications and source records attributed to Irene D'Amico.

68 records · Page 4Linked to original sources
arXiv2004

Spin injection and electric field effect in degenerate semiconductors

We analyze spin-transport in semiconductors in the regime characterized by $T\stackrel{<}{\sim}T_F$ (intermediate to degenerate), where $T_F$ is the Fermi temperature. Such a regime is of great importance since it includes the lightly doped semiconductor structures used in most experiments; we demonstrate that, at the same time, it corresponds to the regime in which carrier-carrier interactions assume a relevant role. Starting from a general formulation of the drift-diffusion equations, which includes many-body correlation effects, we perform detailed calculations of the spin injection characteristics of various heterostructures, and analyze the combined effects of carrier density variation, applied electric field and Coulomb interaction. We show the existence of a degenerate regime, peculiar to semiconductors, which strongly differs, as spin-transport is concerned, from the degenerate regime of metals.

cond-mat.mes-hall↗
arXiv2004

Intrinsic electric field effects on few-particle interactions in coupled GaN quantum dots

We study the multi-exciton optical spectrum of vertically coupled GaN/AlN quantum dots with a realistic three-dimensional direct-diagonalization approach for the description of few-particle Coulomb-correlated states. We present a detailed analysis of the fundamental properties of few-particle/exciton interactions peculiar of nitride materials. The giant intrinsic electric fields and the high electron/hole effective masses give rise to different effects compared to GaAs-based quantum dots: intrinsic exciton-exciton coupling, non-molecular character of coupled dot exciton wavefunction, strong dependence of the oscillator strength on the dot height, large ground state energy shift for dots separated by different barriers. Some of these effects make GaN/AlN quantum dots interesting candidates in quantum information processing.

cond-mat.mtrl-sci↗
arXiv2003

Spin Coulomb drag in the two-dimensional electron liquid

We calculate the spin-drag transresistivity $ρ_{\uparrow \downarrow}(T)$ in a two-dimensional electron gas at temperature $T$ in the random phase approximation. In the low-temperature regime we show that, at variance with the three-dimensional low-temperature result [$ρ_{\uparrow\downarrow}(T) \sim T^2$], the spin transresistivity of a two-dimensional {\it spin unpolarized} electron gas has the form $ρ_{\uparrow\downarrow}(T) \sim T^2 \ln T$. In the spin-polarized case the familiar form $ρ_{\uparrow\downarrow}(T) =A T^2$ is recovered, but the constant of proportionality $A$ diverges logarithmically as the spin-polarization tends to zero. In the high-temperature regime we obtain $ρ_{\uparrow \downarrow}(T) = -(\hbar / e^2) (π^2 Ry^* /k_B T)$ (where $Ry^*$ is the effective Rydberg energy) {\it independent} of the density. Again, this differs from the three-dimensional result, which has a logarithmic dependence on the density. Two important differences between the spin-drag transresistivity and the ordinary Coulomb drag transresistivity are pointed out: (i) The $\ln T$ singularity at low temperature is smaller, in the Coulomb drag case, by a factor $e^{-4 k_Fd}$ where $k_F$ is the Fermi wave vector and $d$ is the separation between the layers. (ii) The collective mode contribution to the spin-drag transresistivity is negligible at all temperatures. Moreover the spin drag effect is, for comparable parameters, larger than the ordinary Coulomb drag effect.

cond-mat.str-el↗
arXiv2003

Mesoscopic Stern-Gerlach device to polarize spin currents

Spin preparation and spin detection are fundamental problems in spintronics and in several solid state proposals for quantum information processing. Here we propose the mesoscopic equivalent of an optical polarizing beam splitter (PBS). This interferometric device uses non-dispersive phases (Aharonov-Bohm and Rashba) in order to separate spin up and spin down carriers into distinct outputs and thus it is analogous to a Stern-Gerlach apparatus. It can be used both as a spin preparation device and as a spin measuring device by converting spin into charge (orbital) degrees of freedom. An important feature of the proposed spin polarizer is that no ferromagnetic contacts are used.

cond-mat.mes-hall↗
arXiv2002

All-optical single-electron read-out devices based on GaN quantum dots

We study few-particle interactions in GaN-coupled quantum dots and discuss how the built-in field characteristic of these structures strongly reinforce dipole-dipole and dipole-monopole interactions. We introduce a semi-analytical model which allows for a rapid and easy estimate of the magnitude of few-particle interactions and whose predictions are closer than 10% to ``exact'' results. We apply our study to the design of an all-optical read-out device which exploits long-range dipole-monopole interactions and may be also used to monitor the charge status of a quantum dot system.

cond-mat.str-el↗
arXiv2002

Spin-based quantum information processing with semiconductor quantum dots and cavity QED

A quantum information processing scheme is proposed with semiconductor quantum dots located in a high-Q single mode QED cavity. The spin degrees of freedom of one excess conduction electron of the quantum dots are employed as qubits. Excitonic states, which can be produced ultrafastly with optical operation, are used as auxiliary states in the realization of quantum gates. We show how properly tailored ultrafast laser pulses and Pauli-blocking effects, can be used to achieve a universal encoded quantum computing.

quant-ph↗
arXiv2002

Exciton-exciton interaction engineering in coupled GaN quantum dots

We present a fully three-dimensional study of the multiexciton optical response of vertically coupled GaN-based quantum dots via a direct-diagonalization approach. The proposed analysis is crucial in understanding the fundamental properties of few-particle/exciton interactions and, more important, may play an essential role in the design/optimization of semiconductor-based quantum information processing schemes. In particular, we focus on the interdot exciton-exciton coupling, key ingredient in recently proposed all-optical quantum processors. Our analysis demonstrates that there is a large window of realistic parameters for which both biexcitonic shift and oscillator strength are compatible with such implementation schemes.

cond-mat.mtrl-sci↗
arXiv2001

Electro-optical properties of semiconductor quantum dots: Application to quantum information processing

A detailed analysis of the electro-optical response of single as well as coupled semiconductor quantum dots is presented. This is based on a realistic ---i.e., fully tridimensional--- description of Coulomb-correlated few-electron states, obtained via a direct-diagonalization approach. More specifically, we investigate the combined effect of static electric fields and ultrafast sequences of multicolor laser pulses in the few-carrier, i.e., low-excitation, regime. In particular, we show how the presence of a properly tailored static field may give rise to significant electron-hole charge separation; these field-induced dipoles, in turn, may introduce relevant exciton-exciton couplings, which are found to induce significant ---both intra- and inter-dot--- biexcitonic splittings. We finally show that such few-exciton systems constitute an ideal semiconductor-based hardware for an all optical implementation of quantum information processing.

cond-mat↗
arXiv2001

Coulomb interaction effects in spin-polarized transport

We study the effect of the electron-electron interaction on the transport of spin polarized currents in metals and doped semiconductors in the diffusive regime. In addition to well-known screening effects, we identify two additional effects, which depend on many-body correlations and exchange and reduce the spin diffusion constant. The first is the "spin Coulomb drag" - an intrinsic friction mechanism which operates whenever the average velocities of up-spin and down-spin electrons differ. The second arises from the decrease in the longitudinal spin stiffness of an interacting electron gas relative to a noninteracting one. Both effects are studied in detail for both degenerate and non-degenerate carriers in metals and semiconductors, and various limiting cases are worked out analytically. The behavior of the spin diffusion constant at and below a ferromagnetic transition temperature is also discussed.

cond-mat.str-el↗
arXiv2001

Spin diffusion in doped semiconductors: the role of Coulomb interactions

We examine the effect of the Coulomb interaction on the mobility and diffusion of spin packets in doped semiconductors. We find that the diffusion constant is reduced, relative to its non-interacting value, by the combined effect of Coulomb-enhanced spin susceptibility and spin Coulomb drag. In ferromagnetic semiconductors, the spin diffusion constant vanishes at the ferromagnetic transition temperature.

cond-mat.str-el↗
arXiv1999

Spin Coulomb Drag

We introduce a distinctive feature of spin-polarized transport, the Spin Coulomb Drag: there is an intrinsic source of friction for spin currents due to the Coulomb interaction between spin ``up'' and spin ``down'' electrons. We calculate the associated ``spin transrestistivity'' in a generalized random phase approximation and discuss its dependence on temperature, frequency, and electron density. We show that, in an appropriate range of parameters, such resistivity is measurable and propose an experiment to measure it.

cond-mat.str-el↗
arXiv1999

Continuum elasticity theory of edge excitations in a two-dimensional electron liquid with finite range interactions

We make use of continuum elasticity theory to investigate the collective modes that propagate along the edge of a two-dimensional electron liquid or crystal in a magnetic field. An exact solution of the equations of motion is obtained with the following simplifying assumptions: (i) The system is {\it macroscopically} homogeneous and isotropic in the half-plane delimited by the edge (ii) The electron-electron interaction is of finite range due to screening by external electrodes (iii) The system is nearly incompressible. At sufficiently small wave vector $q$ we find a universal dispersion curve $ω\sim q$ independent of the shear modulus. At larger wave vectors the dispersion can change its form in a manner dependent on the comparison of various length scales. We obtain analytical formulas for the dispersion and damping of the modes in various physical regimes.

cond-mat.mes-hall↗
arXiv1998

Exact exchange-correlation potential for a time-dependent two electron system

We obtain an exact solution of the time-dependent Schroedinger equation for a two-electron system confined to a plane by an isotropic parabolic potential whose curvature is periodically modulated in time. From this solution we compute the exact time-dependent exchange correlation potential v_xc which enters the Kohn-Sham equation of time-dependent density functional theory. Our exact result provides a benchmark against which various approximate forms for v_xc can be compared. Finally v_xc is separated in an adiabatic and a pure dynamical part and it is shown that, for the particular system studied, the dynamical part is negligible.

cond-mat↗