J. -M. Triscone — Page 3

arXiv2002

Domain wall creep in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films

Ferroelectric switching and nanoscale domain dynamics were investigated using atomic force microscopy on monocrystalline Pb(Zr0.2Ti0.8)O3 thin films. Measurements of domain size versus writing time reveal a two-step domain growth mechanism, in which initial nucleation is followed by radial domain wall motion perpendicular to the polarization direction. The electric field dependence of the domain wall velocity demonstrates that domain wall motion in ferroelectric thin films is a creep process, with the critical exponent mu close to 1. The dimensionality of the films suggests that disorder is at the origin of the observed creep behavior.

cond-mat.dis-nn↗

arXiv2001

Hall effect in underdoped GdBa2Cu3O7-d thin films: evidence for a crossover line in the pseudogap regime

We report on measurements of the resistivity and Hall coefficient in underdoped GdBa2Cu3O7-d epitaxial thin films grown by off-axis magnetron sputtering. The films have been lithographically patterned allowing precise measurements of the temperature dependencies of the inverse Hall constant RH-1 and of the Hall angle theta_H. We find that RH-1 is linear in temperature between 300K and the pseudogap temperature T*, whereas cot(theta_H) displays a perfect T2 temperature dependence between typically 300 and 100K. We observe for all the samples that the temperature at which the temperature dependence of cot(theta_H) deviates from the T2 behavior is correlated to the temperature at which RH displays a peak. This characteristic temperature, found to lie between Tc and T*, does not depend markedly on the doping level and defines a new crossover line in the temperature versus doping phase diagram. We tentatively relate these findings to recent high frequency conductivity and Nernst effect experimental results, and we briefly discuss the possible consequences for competing theories for the pseudogap state of the cuprates.

cond-mat.supr-con↗