arXiv subjects

J. -M. Triscone

Publications and source records attributed to J. -M. Triscone.

At least 37 records · Page 2Linked to original sources

arXiv2012

Rashba induced magnetoconductance oscillations in the LaAlO3-SrTiO3 heterostructure

We report measurements of the normal state in-plane magnetoconductance in gated LaAlO$_3$-SrTiO$_3$ samples. As the orientation of the magnetic field changes within the plane of the interface, the signal displays periodic oscillations with respect to the angle between the field and the direction of the current. We show that in the underdoped to optimally doped range, a Fermi surface reconstruction takes place due to the Rashba spin-orbit term and that the oscillations are due to a magnetic field induced opening and closing of a gap at the $Γ$ point for those Ti out-of-plane orbitals having their band minimum close to the Fermi energy of the system.

cond-mat.str-el↗

arXiv2011

Intrinsic origin of the two-dimensional electron gas at polar oxide interfaces

The predictions of the polar catastrophe scenario to explain the occurrence of a metallic interface in heterostructures of the solid solution(LaAlO$_3$)$_{x}$(SrTiO$_3$)$_{1-x}$ (LASTO:x) grown on (001) SrTiO$_3$ were investigated as a function of film thickness and $x$. The films are insulating for the thinnest layers, but above a critical thickness, $t_c$, the interface exhibits a constant finite conductivity which depends in a predictable manner on $x$. It is shown that $t_c$ scales with the strength of the built-in electric field of the polar material, and is immediately understandable in terms of an electronic reconstruction at the nonpolar-polar interface. These results thus conclusively identify the polar-catastrophe model as the intrinsic origin of the doping at this polar oxide interface.

cond-mat.mtrl-sci↗

arXiv2011

Ultrafast strain engineering in complex oxide heterostructures

We report on ultrafast optical experiments in which femtosecond mid-infrared radiation is used to excite the lattice of complex oxide heterostructures. By tuning the excitation energy to a vibrational mode of the substrate, a long-lived five-order-of-magnitude increase of the electrical conductivity of NdNiO3 epitaxial thin films is observed as a structural distortion propagates across the interface. Vibrational excitation, extended here to a wide class of heterostructures and interfaces, may be conducive to new strategies for electronic phase control at THz repetition rates.

cond-mat.str-el↗

arXiv2011

Metal-insulator transition in ultrathin LaNiO3 films

Transport in ultrathin films of LaNiO3 evolves from a metallic to a strongly localized character as the film's thickness is reduced and the sheet resistance reaches a value close to h/e2, the quantum of resistance in two dimensions. In the intermediate regime, quantum corrections to the Drude low- temperature conductivity are observed; they are accurately described by weak localization theory. Remarkably, the negative magnetoresistance in this regime is isotropic, which points to magnetic scattering associated with the proximity of the system to either a spin glass state or the charge ordered antiferromagnetic state observed in other rare earth nickelates.

cond-mat.mtrl-sci↗

arXiv2010

Shear effects in lateral piezoresponse force microscopy at 180$^\circ$ ferroelectric domain walls

In studies using piezoresponse force microscopy, we observe a non-zero lateral piezoresponse at 180$^\circ$ domain walls in out-of-plane polarized, c-axis-oriented tetragonal ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ epitaxial thin films. We attribute these observations to a shear strain effect linked to the sign change of the $d_{33}$ piezoelectric coefficient through the domain wall, in agreement with theoretical predictions. We show that in monoclinically distorted tetragonal BiFeO$_3$ films, this effect is superimposed on the lateral piezoresponse due to actual in-plane polarization, and has to be taken into account in order to correctly interpret the ferroelectric domain configuration.

cond-mat.mtrl-sci↗

arXiv2010

Two-dimensional quantum oscillations of the conductance at LaAlO3/SrTiO3 interfaces

We report on a study of magnetotransport in LaAlO3/SrTiO3 interfaces characterized by mobilities of the order of several thousands cm$^{2}$/Vs. We observe Shubnikov-de Haas oscillations that indicate a two-dimensional character of the Fermi surface. The frequency of the oscillations signals a multiple sub-bands occupation in the quantum well or a multiple valley configuration. From the temperature dependence of the oscillation amplitude we extract an effective carrier mass $m^{*}\simeq1.45$\,$m_{e}$. An electric field applied in the back-gate geometry increases the mobility, the carrier density and the oscillation frequency.

cond-mat.mtrl-sci↗

arXiv2010

Diodes with Breakdown Voltages Enhanced by the Metal-Insulator Transition of LaAlO$_3$-SrTiO$_3$ Interfaces

Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO$_3$-SrTiO$_3$ interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the capacitance of the diodes changes by a factor of 150. The diodes are robust and operate at temperatures up to 270 C.

cond-mat.mtrl-sci↗

arXiv2010

Seebeck effect in the conducting LaAlO_{3}/SrTiO_{3} interface

The observation of metallic behavior at the interface between insulating oxides has triggered worldwide efforts to shed light on the physics of these systems and clarify some still open issues, among which the dimensional character of the conducting system. In order to address this issue, we measure electrical transport (Seebeck effect, Hall effect and conductivity) in LaAlO_{3}/SrTiO_{3} interfaces and, for comparison, in a doped SrTiO_{3} bulk single crystal. In these experiments, the carrier concentration is tuned, using the field effect in a back gate geometry. The combined analysis of all experimental data at 77 K indicates that the thickness of the conducting layer is ~7 nm and that the Seebeck effect data are well described by a two-dimensional (2D) density of states. We find that the back gate voltage is effective in varying not only the charge density, but also the thickness of the conducting layer, which is found to change by a factor of ~2, using an electric field between -4 and +4MV/m at 77K. No enhancement of the Seebeck effect due to the electronic confinement and no evidence for two-dimensional quantization steps are observed at the interfaces.

cond-mat.mes-hall↗

arXiv2009

Tunable Rashba spin-orbit interaction at oxide interfaces

The quasi-two-dimensional electron gas found at the LaAlO3/SrTiO3 interface offers exciting new functionalities, such as tunable superconductivity, and has been proposed as a new nanoelectronics fabrication platform. Here we lay out a new example of an electronic property arising from the interfacial breaking of inversion symmetry, namely a large Rashba spin-orbit interaction, whose magnitude can be modulated by the application of an external electric field. By means of magnetotransport experiments we explore the evolution of the spin-orbit coupling across the phase diagram of the system. We uncover a steep rise in Rashba interaction occurring around the doping level where a quantum critical point separates the insulating and superconducting ground states of the system.

cond-mat.str-el↗

arXiv2009

Electrostatically tuned quantum superconductor-metal-insulator transition at the LaAlO3/SrTiO3 interface

Recently superconductivity at the interface between the insulators LaAlO3 and SrTiO3 has been tuned with the electric field effect to an unprecedented range of transition temperatures. Here we perform a detailed finite size scaling analysis to explore the compatibility of the phase transition line with Berezinskii-Kosterlitz-Thouless (BKT) behavior and a 2D-quantum phase(QP)-transition. In an intermediate regime, limited by a gate voltage dependent limiting length, we uncover remarkable consistency with a BKT-critical line ending at a metallic quantum critical point, separating a weakly localized insulator from the superconducting phase. Our estimates for the critical exponents of the 2D-QP-transition, z=1 and nu=0.66, suggest that it belongs to the 3D-xy universality class.

cond-mat.supr-con↗

arXiv2008

Superconductor - Normal and Quantum Superconductor-Insulator Transition at the LaAlO3/SrTiO3Interface

Superconductivity at the interface between the insulators LaAlO3 and SrTiO3 has been tuned with the electric field effect. The data provide evidence for a two dimensional quantum superconductor to insulator (2D-QSI) transition. Here we explore the compatibility of this phase transition line with Berezinskii-Kosterlitz-Thouless (BKT) behavior and a 2D-QSI transition. In an intermediate regime, limited by a finite size effect, we uncover remarkable consistency with BKT- criticality, weak localization in the insulating state and non-Drude behavior in the normal state. Our estimates for the critical exponents of the 2D-QSI-transition, z =1 and nu=3, suggest that it belongs to the 3D-xy universality class.

cond-mat.supr-con↗

arXiv2008

Electric Field Control of the LaAlO$_{3}$/SrTiO$_{3}$ Interface Ground State

Interfaces between complex oxides are emerging as one of the most interesting playgrounds in condensed matter physics. In this special setting, in which translational symmetry is artificially broken, a variety of novel electronic phases can be promoted. Theoretical studies predict complex phase diagrams and suggest the key role of the carrier density in determining the systems ground states. A particularly fascinating system is the interface between the insulators LaAlO$_{3}$ and SrTiO$_{3}$, which displays conductivity with high mobility. Recently two possible ground states have been experimentally identified: a magnetic state and a two dimensional (2D) superconducting condensate. In this Letter we use the electric field effect to explore the phase diagram of the system. The electrostatic tuning of the carrier density allows an on/off switching of superconductivity and drives a quantum phase transition (QPT) between a 2D superconducting state and an insulating state (2D-QSI). Analyses of the magnetotransport properties in the insulating state are consistent with weak localisation and do not provide evidence for magnetism. The electric field control of superconductivity demonstrated here opens the way to the development of novel mesoscopic superconducting circuits

cond-mat.supr-con↗

arXiv2006

Electric field effect modulation of transition temperature, mobile carrier density and in-plane penetration depth in NdBa2Cu3O(7-delta) thin films

We explore the relationship between the critical temperature, T_c, the mobile areal carrier density, n_2D, and the zero temperature magnetic in-plane penetration depth, lambda_ab(0), in very thin underdoped NdBa2Cu3O{7-delta} films near the superconductor to insulator transition using the electric field effect technique. We observe that T_c depends linearly on both, n_2D and lambda_ab(0), the signature of a quantum superconductor to insulator (QSI) transition in two dimensions with znu-bar where z is the dynamic and nu-bar the critical exponent of the in-plane correlation length.

cond-mat.supr-con↗

arXiv2005

Direct evidence for ferroelectric polar distortion in ultrathin lead titanate perovskite films

X-ray photoelectron diffraction is used to directly probe the intra-cell polar atomic distortion and tetragonality associated with ferroelectricity in ultrathin epitaxial PbTiO3 films. Our measurements, combined with ab-initio calculations, unambiguously demonstrate non-centro-symmetry in films a few unit cells thick, imply that films as thin as 3 unit cells still preserve a ferroelectric polar distortion, and also show that there is no thick paraelectric dead layer at the surface.

cond-mat.mtrl-sci↗

arXiv2005

Epitaxial growth and transport properties of Nb-doped SrTiO$_{3}$ thin films

Nb-doped SrTiO$_{3}$ epitaxial thin films have been prepared on (001) SrTiO$_{3}$ substrates using pulsed laser deposition. A high substrate temperature ($>1000^{\circ}{C}$) was found to be necessary to achieve 2-dimensional growth. Atomic force microscopy reveals atomically flat surfaces with 3.9 Å$ $ steps. The films show a metallic behavior, residual resistivity ratios between 10 and 100, and low residual resistivity of the order of 10$^{-4}$$Ω$cm. At 0.3 K, a sharp superconducting transition, reaching zero resistance, is observed.

cond-mat.supr-con↗

arXiv2005

Unusual behaviour of the ferroelectric polarization in PbTiO$_{3}$/SrTiO$_{3}$ superlattices

Artificial PbTiO$_{3}$/SrTiO$_{3}$ superlattices were constructed using off-axis RF magnetron sputtering. X-ray diffraction and piezoelectric atomic force microscopy were used to study the evolution of the ferroelectric polarization as the ratio of PbTiO$_{3}$ to SrTiO$_{3}$ was changed. For PbTiO$_{3}$ layer thicknesses larger than the 3-unit cells SrTiO$_{3}$ thickness used in the structure, the polarization is found to be reduced as the PbTiO$_{3}$ thickness is decreased. This observation confirms the primary role of the depolarization field in the polarization reduction in thin films. For the samples with ratios of PbTiO$_{3}$ to SrTiO$_{3}$ of less than one a surprising recovery of ferroelectricity that cannot be explained by electrostatic considerations was observed.

cond-mat.mtrl-sci↗

arXiv2004

Domain wall roughness in epitaxial ferroelectric PbZr0.2Ti0.8O3 thin films

The static configuration of ferroelectric domain walls was investigated using atomic force microscopy on epitaxial PbZr0.2Ti0.8O3 thin films. Measurements of domain wall roughness reveal a power law growth of the correlation function of relative displacements B(L) ~ L^(2zeta) with zeta ~ 0.26 at short length scales L, followed by an apparent saturation at large L. In the same films, the dynamic exponent mu was found to be ~ 0.6 from independent measurements of domain wall creep. These results give an effective domain wall dimensionality of d=2.5, in good agreement with theoretical calculations for a two-dimensional elastic interface in the presence of random-bond disorder and long range dipolar interactions.

cond-mat.dis-nn↗

arXiv2004

Nanoscale studies of domain wall motion in epitaxial ferroelectric thin films

Atomic force microscopy was used to investigate ferroelectric switching and nanoscale domain dynamics in epitaxial PbZr0.2Ti0.8O3 thin films. Measurements of the writing time dependence of domain size reveal a two-step process in which nucleation is followed by radial domain growth. During this growth, the domain wall velocity exhibits a v ~ exp[-(1/E)^mu] dependence on the electric field, characteristic of a creep process. The domain wall motion was analyzed both in the context of stochastic nucleation in a periodic potential as well as the canonical creep motion of an elastic manifold in a disorder potential. The dimensionality of the films suggests that disorder is at the origin of the observed domain wall creep. To investigate the effects of changing the disorder in the films, defects were introduced during crystal growth (a-axis inclusions) or by heavy ion irradiation, producing films with planar and columnar defects, respectively. The presence of these defects was found to significantly decrease the creep exponent mu, from 0.62 - 0.69 to 0.38 - 0.5 in the irradiated films and 0.19 - 0.31 in the films containing a-axis inclusions.

cond-mat.dis-nn↗