arXiv subjects

J. Barnas

Publications and source records attributed to J. Barnas.

67 records · Page 4Linked to original sources

arXiv2005

Spin effects in electron tunnelling through a quantum dot coupled to non-collinearly polarized ferromagnetic leads

Spin-dependent transport through an interacting single-level quantum dot coupled to ferromagnetic leads with non-collinear magnetizations is analyzed theoretically. The transport properties and average spin of the dot are investigated within the nonequilibrium Green function technique based on the equation of motion in the Hartree-Fock approximation. Numerical results show that Coulomb correlations on the dot and strong spin polarization of the leads significantly enhance precession of the average dot spin around the effective molecular field created by the external electrodes. Moreover, they also show that spin precession may lead to negative differential conductance in the voltage range between the two relevant threshold voltages. Nonmonotonous angular variation of electric current and change in sign of the tunnel magnetoresistance are also found. It is also shown that the diode-like behavior in asymmetrical junctions with one electrode being half-metallic is significantly reduced in noncollinear configurations.

cond-mat.mes-hall↗

arXiv2004

Magnetoresistance of a semiconducting magnetic wire with domain wall

We investigate theoretically the influence of the spin-orbit interaction of Rashba type on the magnetoresistance of a semiconducting ferromagnetic nanostructure with a laterally constrained domain wall. The domain wall is assumed sharp (on the scale of the Fermi wave length of the charge carriers). It is shown that the magnetoresistance in such a case can be considerably large, which is in a qualitative agreement with recent experimental observations. It is also shown that spin-orbit interaction may result in an increase of the magnetoresistance. The role of localization corrections is also briefly discussed.

cond-mat.mtrl-sci↗

arXiv2004

Gate-controlled spin-splitting in quantum dots with ferromagnetic leads in the Kondo regime

The effect of a gate voltage ($V_g$) on the spin-splitting of an electronic level in a quantum dot (QD) attached to ferromagnetic leads is studied in the Kondo regime using a generalized numerical renormalization group technique. We find that the $V_g$-dependence of the QD level spin-splitting strongly depends on the shape of the density of states (DOS). For one class of DOS shapes there is nearly no $V_g$-dependence, for another, $V_g$ can be used to control the magnitude and sign of the spin-splitting, which can be interpreted as a local exchange magnetic field. We find that the spin-splitting acquires a new type of logarithmic divergence. We give an analytical explanation for our numerical results and explain how they arise due to spin-dependent charge fluctuations.

cond-mat.mtrl-sci↗

arXiv2004

Kondo effect in quantum dots coupled to ferromagnetic leads

We study the Kondo effect in a quantum dot which is coupled to ferromagnetic leads and analyse its properties as a function of the spin polarization of the leads. Based on a scaling approach we predict that for parallel alignment of the magnetizations in the leads the strong-coupling limit of the Kondo effect is reached at a finite value of the magnetic field. Using an equation-of-motion technique we study nonlinear transport through the dot. For parallel alignment the zero-bias anomaly may be split even in the absence of an external magnetic field. For antiparallel spin alignment and symmetric coupling, the peak is split only in the presence of a magnetic field, but shows a characteristic asymmetry in amplitude and position.

cond-mat.mes-hall↗

arXiv2003

Reflection of electrons from a domain wall in magnetic nanojunctions

Electronic transport through thin and laterally constrained domain walls in ferromagnetic nanojunctions is analyzed theoretically. The description is formulated in the basis of scattering states. The resistance of the domain wall is calculated in the regime of strong electron reflection from the wall. It is shown that the corresponding magnetoresistance can be large, which is in a qualitative agreement with recent experimental observations. We also calculate the spin current flowing through the wall and the spin polarization of electron gas due to reflections from the domain wall.

cond-mat.mtrl-sci↗

arXiv2002

Interference effects in electronic transport through metallic single-wall carbon nanotubes

In a recent paper Liang {\it et al.} [Nature {\bf 411}, 665 (2001)] showed experimentally, that metallic nanotubes, strongly coupled to external electrodes, may act as coherent molecular waveguides for electronic transport. The experimental results were supported by theoretical analysis based on the scattering matrix approach. In this paper we analyze theoretically this problem using a real-space approach, which makes it possible to control quality of interface contacts. Electronic structure of the nanotube is taken into account within the tight-binding model. External electrodes and the central part (sample) are assumed to be made of carbon nanotubes, while the contacts between electrodes and the sample are modeled by appropriate on-site (diagonal) and hopping (off-diagonal) parameters. Conductance is calculated by the Green function technique combined with the Landauer formalism. In the plots displaying conductance {\it vs.} bias and gate voltages, we have found typical diamond structure patterns, similar to those observed experimentally. In certain cases, however, we have found new features in the patterns, like a double-diamond sub-structure.

cond-mat.mes-hall↗

arXiv2002

A new mechanism of exchange interaction in ferromagnetic semiconductors

We propose a new mechanism of indirect exchange interaction, which can be responsible for the ferromagnetic ordering in Mn-doped semiconductors (like GaMnAs) at low carrier concentration. The mechanism is based on the interplay of the hybridization of band states (conduction or valence) with localized impurity (donor or acceptor) states and the direct exchange interaction between localized spins and the band states. The indirect exchange coupling between two impurities occurs when the wavefunctions of the corresponding localized donor (acceptor) states overlap. This coupling is independent of the free carrier concentration and therefore may be responsible for ferromagnetic transition at low or vanishing carrier concentration.

cond-mat.mtrl-sci↗

arXiv2002

Electrons in a ferromagnetic metal with a domain wall

We present theoretical description of conduction electrons interacting with a domain wall in ferromagnetic metals. The description takes into account interaction between electrons. Within the semiclassical approximation we calculate the spin and charge distributions, particularly their modification by the domain wall. In the same approximation we calculate local transport characteristics, including relaxation times and charge and spin conductivities. It is shown that these parameters are significantly modified near the wall and this modification depends on electron-electron interaction.

cond-mat.mtrl-sci↗

arXiv2001

Weak localization in ferromagnets with spin-orbit interaction

Weak localization corrections to conductivity of ferromagnetic systems are studied theoretically in the case when spin-orbit interaction plays a significant role. Two cases are analyzed in detail: (i) the case when the spin-orbit interaction is due to scattering from impurities, and (ii) the case when the spin-orbit interaction results from reduced dimensionality of the system and is of the Bychkov-Rashba type. Results of the analysis show that the localization corrections to conductivity of ferromagnetic metals lead to a negative magnetoresistance -- also in the presence of the spin-orbit scattering. Positive magnetoresistance due to weak antilocalization, typical of nonmagnetic systems, does not occur in ferromagnetic systems. In the case of two-dimensional ferromagnets, the quantum corrections depend on the magnetization orientation with respect to the plane of the system.

cond-mat.mtrl-sci↗

arXiv2000

Spin effects in ferromagnetic single-electron transistors

Electron tunneling in ferromagnetic single-electron transistors is considered theoretically in the sequential tunneling regime. A new formalism is developed, which operates in a two-dimensional space of states, instead of one-dimensiona space used in the spinless case. It is shown that spin fluctuations can be significantly larger than the charge fluctuations. The influence of discrete energy spectrum of a small central electrode on tunneling current, charge and spin accumulation, charge and spin fluctuations, and on tunnel magnetoresistance is analyzed in details. Two different scales are found in the bias dependence of the basic transport characteristics; the shorter one originates from the discrete energy spectrum and the longer one from discrete charging of the central electrode. The features due to discrete spectrum and discrete charging disappear at high temperatures.

cond-mat.mes-hall↗

arXiv1999

Theory of spin effect on Coulomb blockade of single-electron tunneling in ferromagnetic system

Spin dependent single electron tunneling in a ferromagnetic double junction is investigated theoretically in the limit of incoherent sequential tunneling. The junction consists of a small nonmagnetic metallic grain with discrete energy levels, which is connected to two ferromagnetic electrodes. We have developed a new theoretical model taking into account charge as well as spin degrees of freedom. The model allows us to investigate new phenomena such as spin accumulation and spin fluctuations.

cond-mat.mes-hall↗

arXiv1999

Shot noise in ferromagnetic single electron tunneling devices

Frequency dependent current noise in ferromagnetic double junctions with Coulomb blockade is studied theoretically in the limit of sequential tunneling. Two different relaxation processes are found in the correlations between spin polarized tunneling currents; low frequency spin fluctuations and high frequency charge fluctuations. Spin accumulation in strongly asymmetric junctions is shown to lead to a negative differential resistance. We also show that large spin noise activated in the range of negative differential resistance gives rise to a significant enhancement of the current noise.

cond-mat.mes-hall↗

arXiv1998

Spin effects in single-electron tunneling in magnetic junctions

Spin dependent single electron tunneling in ferromagnetic double junctions is analysed theoretically in the limit of sequential tunneling. The influence of discrete energy spectrum of the central electrode (island)on the spin accumulation, spin fluctuations and tunnel magnetoresistance is analysed numerically in the case of a nonmagnetic island. It is shown that spin fluctuations are significant in magnetic as well as in nonmagnetic junctions.

cond-mat.mes-hall↗