arXiv subjects

J. Bauer

Publications and source records attributed to J. Bauer.

39 records · Page 3Linked to original sources

arXiv2005

Non-equilibrium Differential Conductance through a Quantum Dot in a Magnetic Field

We derive an exact expression for the differential conductance for a quantum dot in an arbitrary magnetic field for small bias voltage. The derivation is based on the symmetric Anderson model using renormalized perturbation theory and is valid for all values of the on-site interaction $U$ including the Kondo regime. We calculate the critical magnetic field for the splitting of the Kondo resonance to be seen in the differential conductivity as function of bias voltage. Our calculations for small field show that the peak position of the component resonances in the differential conductance are reduced substantially from estimates using the equilibrium Green's function. We conclude that it is important to take the voltage dependence of the local retarded Green's function into account in interpreting experimental results

cond-mat.str-el↗

arXiv2005

Magnetic Field Effects on Quasiparticles in Strongly Correlated Local Systems

We show that quasiparticles in a magnetic field of arbitrary strength $H$ can be described by field dependent parameters. We illustrate this approach in the case of an Anderson impurity model and use the numerical renormalization group (NRG) to calculate the renormalized parameters for the levels with spin $σ$, $\tildeε_{\mathrm{d},σ}(H)$, resonance width $\tildeΔ(H)$ and the effective local quasiparticle interaction $\tilde U(H)$. In the Kondo or strong correlation limit of the model the progressive de-renormalization of the quasiparticles can be followed as the magnetic field is increased. The low temperature behaviour, including the conductivity, in arbitrary magnetic field can be calculated in terms of the field dependent parameters using the renormalized perturbation expansion. Using the NRG the field dependence of the spectral density on higher scales is also calculated.

cond-mat.str-el↗

arXiv2004

A new method to epitaxially grow long-range ordered self-assembled InAs quantum dots on (110) GaAs

We report on a new approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on in-situ cleaved surfaces (cleaved-edge overgrowth) we have successfully fabricated arrays of long-range ordered InAs quantum dots. Both atomic force microscopy and micro-photoluminescence measurements demonstrate the ability to control size, position, and ordering of the quantum dots. Furthermore, single dot photoluminescence investigations confirm the high optical quality of the quantum dots fabricated.

cond-mat.mes-hall↗