arXiv subjects

J. C. Maan

Publications and source records attributed to J. C. Maan.

36 records · Page 2Linked to original sources

arXiv2011

Coexistence of electron and hole transport in graphene

When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two- component model of coexisting electrons and holes around the charge neutrality point, we unambiguously show that both types of carriers are simultaneously present. For high magnetic fields up to 30 T the electron and hole concentrations at the charge neutrality point increase with the degeneracy of the zero-energy Landau level which implies a quantum Hall metal state at ν=0 made up by both electrons and holes.

cond-mat.mes-hall↗

arXiv2011

Spin splitting in graphene studied by means of tilted magnetic-field experiments

We have measured the spin splitting in single-layer and bilayer graphene by means of tilted magnetic field experiments. Applying the Lifshitz-Kosevich formula for the spin-induced decrease of the Shubnikov de Haas amplitudes with increasing tilt angle we directly determine the product between the carrier cyclotron mass m* and the effective g-factor g* as a function of the charge carrier concentration. Using the cyclotron mass for a single-layer and a bilayer graphene we find an enhanced g-factor g* = 2.7 \pm 0.2 for both systems.

cond-mat.mes-hall↗

arXiv2010

Quantum Hall activation gaps in bilayer graphene

We have measured the quantum Hall activation gaps in bilayer graphene at filling factors $ν=\pm4$ and $ν=\pm8$ in high magnetic fields up to 30 T. We find that energy levels can be described by a 4-band relativistic hyperbolic dispersion. The Landau level width is found to contain a field independent background due to an intrinsic level broadening and a component which increases linearly with magnetic field.

cond-mat.mes-hall↗

arXiv2009

Scaling of the quantum-Hall plateau-plateau transition in graphene

The temperature dependence of the magneto-conductivity in graphene shows that the widths of the longitudinal conductivity peaks, for the N=1 Landau level of electrons and holes, display a power-law behavior following $Δν\propto T^κ$ with a scaling exponent $κ= 0.37\pm0.05$. Similarly the maximum derivative of the quantum Hall plateau transitions $(dσ_{xy}/dν)^{max}$ scales as $T^{-κ}$ with a scaling exponent $κ= 0.41\pm0.04$ for both the first and second electron and hole Landau level. These results confirm the universality of a critical scaling exponent. In the zeroth Landau level, however, the width and derivative are essentially temperature independent, which we explain by a temperature independent intrinsic length that obscures the expected universal scaling behavior of the zeroth Landau level.

cond-mat.mes-hall↗

arXiv2009

Gap opening in the zeroth Landau level of graphene

We have measured a strong increase of the low-temperature resistivity $ρ_{xx}$ and a zero-value plateau in the Hall conductivity $σ_{xy}$ at the charge neutrality point in graphene subjected to high magnetic fields up to 30 T. We explain our results by a simple model involving a field dependent splitting of the lowest Landau level of the order of a few Kelvin, as extracted from activated transport measurements. The model reproduces both the increase in $ρ_{xx}$ and the anomalous $ν=0$ plateau in $σ_{xy}$ in terms of coexisting electrons and holes in the same spin-split zero-energy Landau level.

cond-mat.mes-hall↗

arXiv2008

Quantum resistance metrology in graphene

We have performed a metrological characterization of the quantum Hall resistance in a 1 $μ$m wide graphene Hall-bar. The longitudinal resistivity in the center of the $ν=\pm 2$ quantum Hall plateaus vanishes within the measurement noise of 20 m$Ω$ upto 2 $μ$A. Our results show that the quantization of these plateaus is within the experimental uncertainty (15 ppm for 1.5$ μ$A current) equal to that in conventional semiconductors. The principal limitation of the present experiments are the relatively high contact resistances in the quantum Hall regime, leading to a significantly increased noise across the voltage contacts and a heating of the sample when a high current is applied.

cond-mat.mes-hall↗

arXiv2008

Magnetoresistance oscillations and relaxation effects at the SrTiO3-LaAlO3 interface

We present low-temperature and high-field magnetotransport data on SrTiO3-LaAlO3 interfaces. The resistance shows hysteresis in magnetic field and a logarithmic relaxation as a function of time. Oscillations in the magnetoresistance are observed, showing a square root periodicity in the applied magnetic field, both in large-area unstructured samples as well as in a structured sample. An explanation in terms of a commensurability condition of edge states in a highly mobile two-dimensional electron gas between substrate step edges is suggested.

cond-mat.str-el↗

arXiv2008

Nanolithography and manipulation of graphene using an atomic force microscope

We use an atomic force microscope (AFM) to manipulate graphene films on a nanoscopic length scale. By means of local anodic oxidation with an AFM we are able to structure isolating trenches into single-layer and few-layer graphene flakes, opening the possibility of tabletop graphene based device fabrication. Trench sizes of less than 30 nm in width are attainable with this technique. Besides oxidation we also show the influence of mechanical peeling and scratching with an AFM of few layer graphene sheets placed on different substrates.

cond-mat.mes-hall↗

arXiv2007

Quantum-Hall activation gaps in graphene

We have measured the quantum-Hall activation gaps in graphene at filling factors $ν=2$ and $ν=6$ for magnetic fields up to 32 T and temperatures from 4 K to 300 K. The $ν=6$ gap can be described by thermal excitation to broadened Landau levels with a width of 400 K. In contrast, the gap measured at $ν=2$ is strongly temperature and field dependent and approaches the expected value for sharp Landau levels for fields $B > 20$ T and temperatures $T > 100$ K. We explain this surprising behavior by a narrowing of the lowest Landau level.

cond-mat.mes-hall↗

arXiv2007

Experimental imaging and atomistic modeling of electron and hole quasiparticle wave functions in InAs/GaAs quantum dots

We present experimental magnetotunneling results and atomistic pseudopotential calculations of quasiparticle electron and hole wave functions of self-assembled InAs/GaAs quantum dots. The combination of a predictive theory along with the experimental results allows us to gain direct insight into the quantum states. We monitor the effects of (i) correlations, (ii) atomistic symmetry and (iii) piezoelectricity on the confined carriers and (iv) observe a peculiar charging sequence of holes that violates the Aufbau principle.

cond-mat.mtrl-sci↗

arXiv2007

Magnetic effects at the interface between nonmagnetic oxides

The electronic reconstruction at the interface between two insulating oxides can give rise to a highly-conductive interface. In analogy to this remarkable interface-induced conductivity we show how, additionally, magnetism can be induced at the interface between the otherwise nonmagnetic insulating perovskites SrTiO3 and LaAlO3. A large negative magnetoresistance of the interface is found, together with a logarithmic temperature dependence of the sheet resistance. At low temperatures, the sheet resistance reveals magnetic hysteresis. Magnetic ordering is a key issue in solid-state science and its underlying mechanisms are still the subject of intense research. In particular, the interplay between localized magnetic moments and the spin of itinerant conduction electrons in a solid gives rise to intriguing many-body effects such as Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions, the Kondo effect, and carrier-induced ferromagnetism in diluted magnetic semiconductors. The conducting oxide interface now provides a versatile system to induce and manipulate magnetic moments in otherwise nonmagnetic materials.

cond-mat.str-el↗

arXiv2007

Anharmonic magnetic deformation of self-assembled molecular nanocapsules

High magnetic fields were used to deform spherical nanocapsules, self-assembled from bola-amphiphilic sexithiophene molecules. At low fields the deformation -- measured through linear birefringence -- scales quadratically with the capsule radius and with the magnetic field strength. These data confirm a long standing theoretical prediction (W. Helfrich, Phys. Lett. {\bf 43A}, 409 (1973)), and permits the determination of the bending rigidity of the capsules as (2.6$\pm$0.8)$\times 10^{-21}$ J. At high fields, an enhanced rigidity is found which cannot be explained within the Helfrich model. We propose a complete form of the free energy functional that accounts for this behaviour, and allows discussion of the formation and stability of nanocapsules in solution.

cond-mat.soft↗

arXiv2007

Room-Temperature Quantum Hall Effect in Graphene

The quantum Hall effect (QHE), one example of a quantum phenomenon that occur on a truly macroscopic scale, has been attracting intense interest since its discovery in 1980 and has helped elucidate many important aspects of quantum physics. It has also led to the establishment of a new metrological standard, the resistance quantum. Disappointingly, however, the QHE could only have been observed at liquid-helium temperatures. Here, we show that in graphene - a single atomic layer of carbon - the QHE can reliably be measured even at room temperature, which is not only surprising and inspirational but also promises QHE resistance standards becoming available to a broader community, outside a few national institutions.

cond-mat.mes-hall↗

arXiv2005

Definitive observation of the dark triplet ground state of charged excitons in high magnetic fields

The ground state of negatively charged excitons (trions) in high magnetic fields is shown to be a dark triplet state, confirming long-standing theoretical predictions. Photoluminescence (PL), reflection, and PL excitation spectroscopy of CdTe quantum wells reveal that the dark triplet trion has lower energy than the singlet trion above 24 Tesla. The singlet-triplet crossover is "hidden" (i.e., the spectral lines themselves do not cross due to different Zeeman energies), but is confirmed by temperature-dependent PL above and below 24 T. The data also show two bright triplet states.

cond-mat.str-el↗

arXiv2005

Coulomb-interaction induced incomplete shell filling in the hole system of InAs quantum dots

We have studied the hole charging spectra of self-assembled InAs quantum dots in perpendicular magnetic fields by capacitance-voltage spectroscopy. From the magnetic field dependence of the individual peaks we conclude that the s-like ground state is completely filled with two holes but that the fourfold degenerate p-shell is only half filled with two holes before the filling of the d-shell starts. The resulting six-hole ground state is highly polarized. This incomplete shell filling can be explained by the large influence of the Coulomb interaction in this system.

cond-mat.mes-hall↗

arXiv2004

Dynamics of liquid crystalline domains in magnetic field

We study microscopic single domains nucleating and growing within the coexistence region of the Isotropic (I) and Nematic (N) phases in magnetic field. By rapidly switching on the magnetic field the time needed to align the nuclei of sufficiently large size is measured, and is found to decrease with the square of the magnetic field. When the field is removed the disordering time is observed to last on a longer time scale. The growth rate of the nematic domains at constant temperature within the coexistence region is found to increase when a magnetic field is applied.

cond-mat.other↗

arXiv2003

Magnetization of a two-dimensional electron gas with a second filled subband

We have measured the magnetization of a dual-subband two-dimensional electron gas, confined in a GaAs/AlGaAs heterojunction. In contrast to two-dimensional electron gases with a single subband, we observe non-1/B-periodic, triangularly shaped oscillations of the magnetization with an amplitude significantly less than $1 μ_{\mathrm{B}}^*$ per electron. All three effects are explained by a field dependent self-consistent model, demonstrating the shape of the magnetization is dominated by oscillations in the confining potential. Additionally, at 1 K, we observe small oscillations at magnetic fields where Landau-levels of the two different subbands cross.

cond-mat.mes-hall↗

arXiv1998

Hysteretic behavior and evidence for domain formation in a double-layer quantum Hall system at total filling factor 2

We report anomalous behavior in a double-layer two dimensional hole gas (2DHG) at even integer filling factors which includes hysteresis in the longitudinal and Hall resistances and a very weak temperature dependence of the resistance minima. All anomalies disappear and the conventional quantum Hall effect behavior recovers when a thin metal film is placed on top of the 2DHG. The behavior is attributed to presence of the theoretically predicted magnetic ordering at even integer filling factors which causes the formation of macroscopic spin-charge domains.

cond-mat.mes-hall↗