arXiv subjects

J. F. Scott

Publications and source records attributed to J. F. Scott.

At least 55 records · Page 3Linked to original sources

arXiv2008

Magnetoelastic-magnetoelectric phase transitions in multiferroic BiFeO3

Our measured dielectric constant and mechanical response of multiferroic BiFeO3 indicate four phase transitions below room temperature. Features correlate with those reported at 50K (from a peak in the zero-field-cooled magnetic susceptibility) and 230K (from splitting between field-cooled and zero-field-cooled magnetic data[1], and 200K (from magnon light scattering cross sections[2]). The primary order parameter is not the polarization in any of the low-T transitions. Instead, the transition near 230 K shows strong elastic coupling, while that at 50K is fundamentally magnetic, but magnetostrictively coupled to the the lattice. The low-T phase transitions display glassy behaviour. A further anomaly at 140K interpreted as spin reorientation[2,3] shows only weakly in dielectric and mechanical studies, indicating that it is predominantly magnetic with little coupling to any of the other order parameters.

cond-mat.mtrl-sci↗

arXiv2008

Vortex Ferroelectric Domains

We show experimental switching data on microscale capacitors of lead-zirconate-titanate (PZT), which reveal time-resolved domain behavior during switching on a 100-ns scale. For small circular capacitors, an unswitched domain remains in the center while complete switching is observed in square capacitors. The observed effect is attributed to the formation of vortex domain during polarization switching in circular capacitors. This dynamical behavior is modeled using the Landau-Liftshitz-Gilbert equations and found to be in detailed agreement with experiment. This simulation implies rotational motion of polarization in the xy-plane, a Heisenberg-like result supported by the recent model of Naumov and Fu [Phys. Rev. Lett. 98, 077603 (2007)], although not directly measurable by the present quasi-static measurements.

cond-mat.mtrl-sci↗

arXiv2008

One-magnon (electromagnon) light scattering in BiFeO3 single crystals

We observed Raman scattering from magnon in frequency range from 10 to 65 cm-1 in BiFeO3 single crystals at cryogenic temperatures; the temperature dependence of the magnon frequency at 18.2 cm-1 approximates an S=5/2 Brillouin function up to the temperature (280 K) at which the magnon becomes overdamped. The diverging cross-section and the frequency-shift at 140K and 200 K implies a magnon-reorientation transition as in orthoferrites. Magnons in polar materials such as BiFeO3 are often termed electromagnons meaning that they possess an electric dipole moment due to magnetoelectric coupling.

cond-mat.mtrl-sci↗

arXiv2007

Strain gradient induced polarization in SrTiO3 single crystals

Piezoelectricity is inherent only in noncentrosymmetric materials, but a piezoelectric response can also be obtained in centrosymmetric crystals if subjected to inhomogeneous deformation. This phenomenon, known as flexoelectricity, affects the functional properties of insulators, particularly thin films of high permittivity materials. We have measured strain-gradient-induced polarization in single crystals of paraelectric SrTiO$_3$ as a function of temperature and orientation down to and below the 105 K phase transition. Estimates were obtained for all the components of the flexoelectric tensor, and calculations based on these indicate that local polarization around defects in SrTiO$_3$ may exceed the largest ferroelectric polarizations. A sign reversal of the flexoelectric response detected below the phase transition suggests that the ferroelastic domain walls of SrTiO$_3$ may be polar.

cond-mat.mtrl-sci↗

arXiv2007

Fractal dimension and size scaling of domains in thin films of multiferroic BiFeO3

We have analyzed the morphology of ferroelectric domains in very thin films of multiferroic BiFeO3. Unlike the more common stripe domains observed in thicker films BiFeO3 or in other ferroics, the domains tend not to be straight, but irregular in shape, with significant domain wall roughening leading to a fractal dimensionality. Also contrary to what is usually observed in other ferroics, the domain size appears not to scale as the square root of the film thickness. A model is proposed in which the observed domain size as a function of film thickness can be directly linked to the fractal dimension of the domains.

cond-mat.mtrl-sci↗

arXiv2007

The beta Phase of Multiferroic Bismuth Ferrite and its beta-gamma Metal-Insulator Transition

We show that epitaxial (001) thin films of multiferroic bismuth ferrite BiFeO3 are monoclinic at room temperature instead of tetragonal or Rhombohedral as reported earlier . We report a orthorhombic order-disorder beta-phase between 820C and 950C contrary to the earlier report. The transition sequence monoclinic-orthorhombic phase in (001)BiFeO3 thin film (rhombohedral-orthorhombic transition in single crystal) resembles that of BaTiO3 or PbSc1/2Ta1/2O3. The transition to the cubic $γ$-phase causes an abrupt collapse of the bandgap toward zero (insulator-metal transition) at the orthorhombic-cubic beta-gamma transition around 950C. This transition is similar to the metal-insulator transition in Ba0.6K0.4BiO3.

cond-mat.mtrl-sci↗

arXiv2007

Conformal oxide coating of Carbon Nanotubes

The International Roadmap for Ferroelectric Memories requires three-dimensional integration of high-dielectric materials onto metal interconnects or bottom electrodes by 2010. We report the first integration of high-dielectric oxide films onto carbon nanotube electrodes with an aim of ultra-high integration density of FeRAMs (Tb/in2).

cond-mat.mtrl-sci↗

arXiv2007

Phase Separation of Bismuth Ferrite into Magnetite under Voltage Stressing

Micro-Raman studies show that under ~700 kV/cm of d.c. voltage stressing for a few seconds, thin-film bismuth ferrite BiFeO3 phase separates into magnetite Fe3O4. No evidence is found spectroscopically of hemite alpha-Fe2O3, maghemite gamma-Fe2O3, or of Bi2O3. This relates to the controversy regarding the magnitude of magnetization in BiFeO3.

cond-mat.mtrl-sci↗

arXiv2007

Domains in Three-dimensional Ferroelectric Nanostructures: Theory and Experiment

Ferroelectric random access memory cells (FeRAMs) have reached 450 x 400 nm production (0.18 micron^2) at Samsung with lead zirconate-titanate (PZT), 0.13 micron^2 at Matsushita with strontium bismuth tantalate (SBT), and comparable sizes at Fujitsu with BiFeO3. However, in order to increase storage density, the industry roadmap requires by 2010 that such planar devices be replaced with three-dimensional structures. Unfortunately, little is known yet about even such basic questions as the domain scaling of 3-d nanodevices, as opposed to 2-d thin films. Here we report the experimental measurement of nano-domains in ferroelectric nanocolumns, together with a theory of domain size in 3-d structures which explains the observations.

cond-mat.mtrl-sci↗

arXiv2006

Giant sharp magnetoelectric switching in multiferroic epitaxial La_{0.67}Sr_{0.33}MnO_3 on BaTiO_3

Magnetoelectric coupling permits a magnetic order parameter to be addressed electrically or vice versa, and could find use in data storage, field sensors and actuators. Coupling constants for single phase materials such as chromium dioxide, boracites and manganites are typically as low as 10^{-12} - 10^{-9} s/m, e.g. because the polarisations and magnetisations are small. Two phase multiferroics with strain mediated coupling, such as laminates, composites and epitaxial nanostructures, are more promising because each phase may be independently optimised. The resulting magnetoelectric switching can be larger, e.g. 10^{-8} s/m, but it is not sharp because clean coupling is precluded by the complexity of the microstructures and concomitant strain fields. Here we report a giant sharp magnetoelectric effect at a single epitaxial interface between a 40 nm ferromagnetic stress-sensitive La_{0.67}Sr_{0.33}MnO_3 film, and a 0.5 mm BaTiO_3 substrate that is ferroelectric, piezoelectric and ferroelastic. By applying a small electric field (4-10 kV/cm) across the entire structure, we achieve persistent changes in film magnetisation of up to 65% near the BaTiO_3 structural phase transition at around 200 K. This represents a giant magnetoelectric coupling (2.3*10-7 s/m) that arises from strain fields due to ferroelastic non-180 degree domains whose presence we confirm using x-ray diffraction. The coupling persists over a wide range of temperatures including room temperature, and could therefore inspire a range of sensor and memory applications.

cond-mat.mtrl-sci↗

arXiv2006

Fractal Dimensions in Switching Kinetics of Ferroelectrics

Early work by the author with Prof. Ishibashi [Scott et al., J. Appl. Phys. 64, 787 (1988)] showed that switching kinetics in ferroelectrics satisfy a constraint on current transients compatible with d = 2.5 dimensionality. At that time with no direct observations of the domains, it was not possible to conclude whether this was a true Hausdorff dimension or a numerical artefact caused by an approximation in the theory (which ignored the dependence of domain wall velocity upon domain diameter). Recent data suggest that the switching dimensionality is truly fractal with d = 2.5. The critical exponent βcharacterizing the order parameter P(T) can be written as a continuous function of dimension d as β(d)= [ν(d)/2] [d+η(d)-2], which is exact within hyperscaling; here νand ηare the exponents characterizing the pair correlation function G(r,T) and the structure factor S(q,T). For d=2.5 the estimate is that βis approximately 1/4.

cond-mat.mtrl-sci↗

arXiv2006

Universality of the Scaling Law for Ferroic Domains

We show how the periodicity of 180^{o} domains as a function of crystal thickness scales with the thickness of the domain walls both for ferroelectric and for ferromagnetic materials. We derive an analytical expression for the universal scaling factor and use this to calculate domain wall thickness and gradient coefficients (exchange constants) in some ferroic materials. We then use these to discuss some of the wider implications for the physics of ferroelectric nano-devices and periodically poled photonic crystals.

cond-mat.mtrl-sci↗

arXiv2006

Electrical Characterization of PbZr0.4Ti0.6O3 Capacitors

We have conducted a careful study of current-voltage (I-V) characteristics in fully integrated commercial PbZr0.4Ti0.6O3 thin film capacitors with Pt bottom and Ir/IrO2 top electrodes. Highly reproducible steady state I-V were obtained at various temperatures over two decades in voltage from current-time data and analyzed in terms of several common transport models including space charge limited conduction, Schottky thermionic emission under full and partial depletion and Poole-Frenkel conduction, showing that the later is the most plausible leakage mechanism in these high quality films. In addition, ferroelectric hysteresis loops and capacitance-voltage data were obtained over a large range of temperatures and discussed in terms of a modified Landau-Ginzburg-Devonshire theory accounting for space charge effects.

cond-mat.mtrl-sci↗

arXiv2006

Space Charge Effects in Ferroelectric Thin Films

The effects of space charges on hysteresis loops and field distributions in ferroelectrics have been investigated numerically using the phenomenological Landau-Ginzburg-Devonshire theory. Cases with the ferroelectric fully and partially depleted have been considered. In general, increasing the number of charged impurities results in a lowering of the polarization and coercive field values. Squarer loops were observed in the partially depleted cases and a method was proposed to identify fully depleted samples experimentally from dielectric and polarization measurements alone. Unusual field distributions found for higher dopant concentrations have some interesting implications for leakage mechanisms and limit the range of validity of usual semiconductor equations for carrier transport.

cond-mat.mtrl-sci↗

arXiv2005

Giant electrocaloric effect in thin film Pb Zr_0.95 Ti_0.05 O_3

An applied electric field can reversibly change the temperature of an electrocaloric material under adiabatic conditions, and the effect is strongest near phase transitions. This phenomenon has been largely ignored because only small effects (0.003 K V^-1) have been seen in bulk samples such as Pb0.99Nb0.02(Zr0.75Sn0.20Ti0.05)0.98O3 and there is no consensus on macroscopic models. Here we demonstrate a giant electrocaloric effect (0.48 K V^-1) in 300 nm sol-gel PbZr0.95Ti0.05O3 films near the ferroelectric Curie temperature of 222oC. We also discuss a solid state device concept for electrical refrigeration that has the capacity to outperform Peltier or magnetocaloric coolers. Our results resolve the controversy surrounding macroscopic models of the electrocaloric effect and may inspire ab initio calculations of electrocaloric parameters and thus a targeted search for new materials.

cond-mat.mtrl-sci↗

arXiv2005

Physics of thin-film ferroelectric oxides

This review covers the important advances in recent years in the physics of thin film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin film form. We introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices. Following this we cover the enormous progress that has been made in the first principles computational approach to understanding ferroelectrics. We then discuss in detail the important role that strain plays in determining the properties of epitaxial thin ferroelectric films. Finally, we look at the emerging possibilities for nanoscale ferroelectrics, with particular emphasis on ferroelectrics in non conventional nanoscale geometries.

cond-mat.mtrl-sci↗

arXiv2004

High-Field Conduction in Barium Titanate

We present current-voltage studies of very thin (ca. 77 nm) barium titanate single crystals up to 1.3 GV/m applied field. These show that the mechanism of leakage current at high fields is that of space charge limited conduction (SCLC) in a regime with a continuous distribution of traps, according to the original model of Rose [Phys. Rev. 97, 1537 (1955)]. This study represents a factor of x5 in field compared with the early studies of BaTiO3 conduction [A. Branwood et al., Proc. Phys. Soc. London 79, 1161 (1962)]. Comparison is also given with ceramic multilayer barium titanate capacitors, which show similar SCLC behaviour. The data are shown to be completely incompatible with variable range hopping [B. I. Shklovskii, Sov. Phys. Semicond. 6, 1964 (1973)], despite the recent report of such mechanism in SrTiO3 films [D. Fuchs, M. Adam, and R. Schneider, J. Phys. IV France 11, 71 (2001)].

cond-mat.mtrl-sci↗

arXiv2004

Negative Differential Resistivity and Positive Temperature Coefficient of Resistivity effect in the diffusion limited current of ferroelectric thin film capacitors

We present a model for the leakage current in ferroelectric thin- film capacitors which explains two of the observed phenomena that have escaped satisfactory explanation, i.e. the occurrence of either a plateau or negative differential resistivity at low voltages, and the observation of a Positive Temperature Coefficient of Resistivity (PTCR) effect in certain samples in the high-voltage regime. The leakage current is modelled by considering a diffusion-limited current process, which in the high-voltage regime recovers the diffusion-limited Schottky relationship of Simmons already shown to be applicable in these systems.

cond-mat.mtrl-sci↗