Magnetotransport properties of strained (Ga0.95, Mn0.05)As epilayers close to the metal-insulator transition: Description using Aronov-Altshuler three-dimensional scaling theory
The magnitude of the anisotropic magnetoresistance (AMR) and the longitudinal resistance in compressively strained (Ga0.95, Mn0.05)As epilayers were measured for the first time down to temperatures as low as 30 mK. Below temperatures of 3K the conductivity decreases ~ T^1/3 over two orders of magnitude in temperature. The conductivity can be well described within the framework of a 3D scaling theory of Anderson's transition in the presence of spin scattering in semiconductors. It is shown that the samples are on the metallic side but very close to the metal-insulator transition (MIT). At lowest temperatures a decrease in the AMR effect is observed, which is assigned to changes in the coupling between the remaining itinerant carriers and the local Mn 5/2-spin moments.