arXiv subjects

J. K. Furdyna

Publications and source records attributed to J. K. Furdyna.

At least 37 records · Page 2Linked to original sources

arXiv2010

Ion-beam modification of the magnetic properties of GaMnAs epilayers

We study the controlled introduction of defects in GaMnAs by irradiating the samples with energetic ion beams, which modify the magnetic properties of the DMS. Our study focuses on the low-carrier-density regime, starting with as-grown GaMnAs films and decreasing even further the number of carriers, through a sequence of irradiation doses. We did a systematic study of magnetization as a function of temperature and of the irradiation ion dose. We also performed in-situ room temperature resistivity measurements as a function of the ion dose. We observe that both magnetic and transport properties of the samples can be experimentally manipulated by controlling the ion-beam parameters. For highly irradiated samples, the magnetic measurements indicate the formation of magnetic clusters together with a transition to an insulating state. The experimental data are compared with mean-field calculations for magnetization. The independent control of disorder and carrier density in the calculations allows further insight on the individual role of this two factors in the ion-beam-induced modification of GaMnAs.

cond-mat.dis-nn↗

arXiv2009

Evidence for reversible control of magnetization in a ferromagnetic material via spin-orbit magnetic field

Conventional computer electronics creates a dichotomy between how information is processed and how it is stored. Silicon chips process information by controlling the flow of charge through a network of logic gates. This information is then stored, most commonly, by encoding it in the orientation of magnetic domains of a computer hard disk. The key obstacle to a more intimate integration of magnetic materials into devices and circuit processing information is a lack of efficient means to control their magnetization. This is usually achieved with an external magnetic field or by the injection of spin-polarized currents. The latter can be significantly enhanced in materials whose ferromagnetic properties are mediated by charge carriers. Among these materials, conductors lacking spatial inversion symmetry couple charge currents to spin by intrinsic spin-orbit (SO) interactions, inducing nonequilibrium spin polarization tunable by local electric fields. Here we show that magnetization of a ferromagnet can be reversibly manipulated by the SO-induced polarization of carrier spins generated by unpolarized currents. Specifically, we demonstrate domain rotation and hysteretic switching of magnetization between two orthogonal easy axes in a model ferromagnetic semiconductor.

cond-mat.mtrl-sci↗

arXiv2008

Carrier-mediated antiferromagnetic interlayer exchange coupling in diluted magnetic semiconductor multilayers Ga$_{1-x}$Mn$_x$As/GaAs:Be

We use neutron reflectometry to investigate the interlayer exchange coupling between Ga$_{0.97}$Mn$_{0.03}$As ferromagnetic semiconductor layers separated by non-magnetic Be-doped GaAs spacers. Polarized neutron reflectivity measured below the Curie temperature of Ga$_{0.97}$Mn$_{0.03}$As reveals a characteristic splitting at the wave vector corresponding to twice the multilayer period, indicating that the coupling between the ferromagnetic layers are antiferromagnetic (AFM). When the applied field is increased to above the saturation field, this AFM coupling is suppressed. This behavior is not observed when the spacers are undoped, suggesting that the observed AFM coupling is mediated by charge carriers introduced via Be doping. The behavior of magnetization of the multilayers measured by DC magnetometry is consistent with the neutron reflectometry results.

cond-mat.str-el↗

arXiv2008

Memory Effect in the Photoinduced Femtosecond Rotation of Magnetization in the Ferromagnetic Semiconductor GaMnAs

We report a femtosecond response in photoinduced magnetization rotation in the ferromagnetic semiconductor GaMnAs, which allows for detection of a four-state magnetic memory at the femtosecond time scale. The temporal profile of this cooperative magnetization rotation exhibits a discontinuity that reveals two distinct temporal regimes, marked by the transition from a highly non-equilibrium, carrier-mediated regime within the first 200 fs, to a thermal, lattice-heating picosecond regime.

cond-mat.mtrl-sci↗

arXiv2008

Two-step model versus one-step model of the inter-polarization conversion and statistics of CdSe/ZnSe quantum dot elongations

The magneto-optical inter-polarization conversions by a layer of quantum dots have been investigated. Various types of polarization response of the sample were observed as a function of external magnetic field and of the orientation of the sample. The full set of experimental dependences is analyzed in terms of a one-step and a two-step model of spin evolution. The angular distribution of the quantum dots over the directions of elongation in the plane of the sample is taken into account in terms of the two models, and the model predictions are compared with experimental observations.

cond-mat.other↗

arXiv2008

Distribution of magnetic domain pinning fields in GaMnAs ferromagnetic films

Using the angular dependence of the planar Hall effect in GaMnAs ferromagnetic films, we were able to determine the distribution of magnetic domain pinning fields in this material. Interestingly, there is a major difference between the pinning field distribution in as-grown and in annealed films, the former showing a strikingly narrower distribution than the latter. This conspicuous difference can be attributed to the degree of non-uniformity of magnetic anisotropy in both types of films. This finding provides a better understanding of the magnetic domain landscape in GaMnAs that has been the subject of intense debate.

cond-mat.mtrl-sci↗

arXiv2008

An extensive comparison of anisotropies in MBE grown (Ga,Mn)As material

This paper reports on a detailed magnetotransport investigation of the magnetic anisotropies of (Ga,Mn)As layers produced by various sources worldwide. Using anisotropy fingerprints to identify contributions of the various higher order anisotropy terms, we show that the presence of both a [100] and a [110] uniaxial anisotropy in addition to the primary ([100] + [010]) anisotropy is common to all medium doped (Ga,Mn)As layers typically used in transport measurement, with the amplitude of these uniaxial terms being characteristic of the individual layers.

cond-mat.mes-hall↗

arXiv2008

GaMnAs-based hybrid multiferroic memory device

A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumption, non-volatility and high operational speed. Despite efficient magnetization detection, magnetization manipulation is primarily performed by current-generated local magnetic fields and is very inefficient. Here we report a novel non-volatile hybrid multiferroic memory cell with electrostatic control of magnetization based on strain-coupled GaMnAs ferromagnetic semiconductor and a piezoelectric material. We use the crystalline anisotropy of GaMnAs to store information in the orientation of the magnetization along one of the two easy axes, which is monitored via transverse anisotropic magnetoresistance. The magnetization orientation is switched by applying voltage to the piezoelectric material and tuning magnetic anisotropy of GaMnAs via the resulting stress field.

cond-mat.mtrl-sci↗

arXiv2008

Nanoscale spin-polarization in dilute magnetic semiconductor (In,Mn)Sb

Results of point contact Andreev reflection (PCAR) experiments on (In,Mn)Sb are presented and analyzed in terms of current models of charge conversion at a superconductor-ferromagnet interface. We investigate the influence of surface transparency, and study the crossover from ballistic to diffusive transport regime as contact size is varied. Application of a Nb tip to a (In,Mn)Sb sample with Curie temperature Tc of 5.4 K allowed the determination of spin-polarization when the ferromagnetic phase transition temperature is crossed. We find a striking difference between the temperature dependence of the local spin polarization and of the macroscopic magnetization, and demonstrate that nanoscale clusters with magnetization close to the saturated value are present even well above the magnetic phase transition temperature.

cond-mat.other↗

arXiv2007

Inelastic Scattering and Spin Polarization in Dilute Magnetic Semiconductor (Ga,Mn)Sb

The Point Contact Andreev Reflection (PCAR) technique has already been used to measure the spin polarization of some of the dilute magnetic semiconductors, such as narrow-band (In,Mn)Sb, as well as wider gap (Ga,Mn)As. While in (In,Mn)Sb conventional Andreev reflection has been demonstrated, in (Ga,Mn)As quasiparticle density of states (DOS) broadening has been observed, possibly due to inelastic scattering effects. Here, we investigate the spin polarization, magnetic, and transport properties of epitaxially grown (Ga,Mn)Sb films with the Curie temperature of ~ 10K. The spin polarization of 57+/-5% was measured. Spectrum broadening in (Ga,Mn)Sb has also been observed.

cond-mat.supr-con↗

arXiv2007

Anomalous Hall effect in (In,Mn)Sb dilute magnetic semiconductor

High magnetic field study of Hall resistivity in the ferromagnetic phase of (In,Mn)Sb allows one to separate its normal and anomalous components. We show that the anomalous Hall term is not proportional to the magnetization, and that it even changes sign as a function of magnetic field. We also show that the application of pressure modifies the scattering process, but does not influence the Hall effect. These observations suggest that the anomalous Hall effect in (In,Mn)Sb is an intrinsic property and support the application of the Berry phase theory for (III,Mn)V semiconductors. We propose a phenomenological description of the anomalous Hall conductivity, based on a field-dependent relative shift of the heavy- and light-hole valence bands and the split-off band.

cond-mat.other↗

arXiv2007

Definitive Evidence of Interlayer Coupling Between (Ga,Mn)As Layers Separated by a Nonmagnetic Spacer

We have used polarized neutron reflectometry to study the structural and magnetic properties of the individual layers in a series of (Al,Be,Ga)As/(Ga,Mn)As/GaAs/(Ga,Mn)As multilayer samples. Structurally, we observe that the samples are virtually identical except for the GaAs spacer thickness (which varies from 3-12 nm), and confirm that the spacers contain little or no Mn. Magnetically, we observe that for the sample with the thickest spacer layer, modulation doping by the(Al,Be,Ga)As results in (Ga,Mn)As layers with very different temperature dependent magnetizations. However, as the spacer layer thickness is reduced, the temperature dependent magnetizations of the top an bottom (Ga,Mn)As layers become progressively more similar - a trend we find to be independent of the crystallographic direction along which spins are magnetized. These results definitively show that (Ga,Mn)As layers can couple across a non-magnetic spacer, and that such coupling depends on spacer thickness.

cond-mat.mtrl-sci↗

arXiv2007

Coherent Magnetization Precession in GaMnAs induced by Ultrafast Optical Excitation

We use femtosecond optical pulses to induce, control and monitor magnetization precession in ferromagnetic Ga0.965Mn0.035As. At temperatures below ~40 K we observe coherent oscillations of the local Mn spins, triggered by an ultrafast photoinduced reorientation of the in-plane easy axis. The amplitude saturation of the oscillations above a certain pump intensity indicates that the easy axis remains unchanged above ~TC/2. We find that the observed magnetization precession damping (Gilbert damping) is strongly dependent on pump laser intensity, but largely independent on ambient temperature. We provide a physical interpretation of the observed light-induced collective Mn-spin relaxation and precession.

cond-mat.mtrl-sci↗

arXiv2007

Weak localization in GaMnAs: evidence of impurity band transport

We report the observation of negative magnetoresistance in the ferromagnetic semiconductor GaMnAs at low temperatures ($T<3$ K) and low magnetic fields ($0< B <20$ mT). We attribute this effect to weak localization. Observation of weak localization provides a strong evidence of impurity band transport in these materials, since for valence band transport one expects either weak anti-localization due to strong spin-orbit interactions or total suppression of interference by intrinsic magnetization. In addition to the weak localization, we observe Altshuler-Aronov electron-electron interactions effect in this material.

cond-mat.mes-hall↗

arXiv2007

Spin dependent resonant tunneling through 6 micron diameter double barrier resonant tunneling diode

A vertical resonant tunneling diode (RTD) based on the paramagnetic Zn1-x-yMnyCdxSe system has been fabricated with a pillar diameter down to ~ 6 micron. The diode exhibits high quality resonant tunneling characteristics through the electron sub-band of the quantum well at a temperature of 4.2K, where a clear phonon replica was observable in addition to the primary peak. Both peaks show a giant Zeeman splitting in an applied magnetic field. Employing a self-consistent real-time Green's function method, the current-voltage characteristic was simulated, showing good agreement with the measured result.

cond-mat.mes-hall↗

arXiv2007

Ultrafast Enhancement of Ferromagnetism via Photoexcited Holes in GaMnAs

We report on the observation of ultrafast photo-enhanced ferromagnetism in GaMnAs. It is manifested as a transient magnetization increase on a 100-ps time scale, after an initial sub-ps demagnetization. The dynamic magnetization enhancement exhibits a maximum below the Curie temperature Tc and dominates the demagnetization component when approaching Tc. We attribute the observed ultrafast collective ordering to the p-d exchange interaction between photoexcited holes and Mn spins, leading to a correlation-induced peak around 20K and a transient increase in Tc.

cond-mat.stat-mech↗

arXiv2007

Near-bandgap wavelength-dependent studies of long-lived traveling coherent longitudinal acoustic phonon oscillations in GaSb/GaAs systems

We report first studies of long-lived oscillations in optical pump-probe measurements on GaSb-GaAs heterostructures. The oscillations arise from a photogenerated coherent longitudinal acoustic phonon wave, which travels from the top surface of GaSb across the interface into the GaAs substrate, providing information on the optical properties of the material as a function of time/depth. Wavelength-dependent studies of the oscillations near the bandgap of GaAs indicate strong correlations to the optical properties of GaAs.

cond-mat.mes-hall↗

arXiv2006

Magnetic and chemical nonuniformity in Ga[1-x]Mn[x]As films as probed by polarized neutron and x-ray reflectometry

We have used complementary neutron and x-ray reflectivity techniques to examine the depth profiles of a series of as-grown and annealed Ga[1-x]Mn[x]As thin films. A magnetization gradient is observed for two as-grown films and originates from a nonuniformity of Mn at interstitial sites, and not from local variations in Mn at Ga sites. Furthermore, we see that the depth-dependent magnetization can vary drastically among as-grown Ga[1-x]Mn[x]As films despite being deposited under seemingly similar conditions. These results imply that the depth profile of interstitial Mn is dependent not only on annealing, but is also extremely sensitive to initial growth conditions. We observe that annealing improves the magnetization by producing a surface layer that is rich in Mn and O, indicating that the interstitial Mn migrates to the surface. Finally, we expand upon our previous neutron reflectivity study of Ga[1-x]Mn[x]As, by showing how the depth profile of the chemical composition at the surface and through the film thickness is directly responsible for the complex magnetization profiles observed in both as-grown and annealed films.

cond-mat.mtrl-sci↗