arXiv subjects

J. Kossut

Publications and source records attributed to J. Kossut.

26 records · Page 2Linked to original sources

arXiv2003

Resonant photoluminescence and excitation spectroscopy of CdSe/ZnSe and CdTe/ZnTe self-assembled quantum dots

We show that two major carrier excitation mechanisms are present in II-VI self-assembled quantum dots. The first one is related to direct excited state - ground state transition. It manifests itself by the presence of sharp and intense lines in the excitation spectrum measured from single quantum dots. Apart from these lines, we also observe up to four much broader excitation lines. The energy spacing between these lines indicates that they are associated with absorption related to longitudinal optical phonons. By analyzing resonantly excited photoluminescence spectra, we are able to separate the contributions from these two mechanisms. In the case of CdTe dots, the excited state - ground state relaxation is important for all dots in ensemble, while phonon - assisted processes are dominant for the dots with smaller lateral size.

cond-mat.mtrl-sci↗

arXiv2003

Resonant Spectroscopy of II-VI Self-Assembled Quantum Dots: Excited States and Exciton-LO Phonon Coupling

Using resonantly excited photoluminescence along with photoluminescence excitation spectroscopies, we study the carrier excitation processes in CdTe/ZnTe and CdSe/ZnSe self-assembled quantum dots. Photoluminescence excitation spectra of single CdTe quantum dots reflect two major mechanisms for carrier excitation: The first, associated with the presence of sharp and intense lines in the spectrum, is a direct excited state ? ground state transition. The second, associated with the appearance of up to four much broader excitation lines, is a LO phonon-assisted absorption directly into the quantum dot ground states. LO phonons with energies of both quantum dots and ZnTe barrier material are identified in the photoluminescence excitation spectra. Resonantly excited PL measurements for the dot ensemble as a function of excitation energy makes it possible to separate the contributions of these two mechanisms. We find that for CdTe quantum dots the distribution of excited states coupled to the ground states reflects the energy distribution of the quantum dot emission, but shifted up in energy by 100 meV. This large splitting between excited and ground states in CdTe quantum dots suggests strong spatial confinement. In contrast, the LO phonon-assisted absorption shows significant size selectivity. In the case of CdTe dots the exciton-LO phonon coupling is strongly enhanced for smaller-sized dots which have higher emission energies. In contrast, for CdSe quantum dots the exciton-LO phonon coupling is uniform over the ensemble ? that is, the energy distribution determines the intensities of LO phonon replicas. We show that for CdTe quantum dots after annealing, that is after an increase in the average dot size, the exciton-LO phonon interaction reflects the dot energy distribution, as observed for CdSe quantum dots.

cond-mat.soft↗

arXiv2003

Tuning the properties of magnetic CdMnTe quantum dots

We show that CdMnTe self-assembled quantum dots can be formed by depositing a submonolayer of Mn ions over a ZnTe surface prior to deposition of the CdTe dot layer. Single dot emission lines and strongly polarized quantum dot photoluminescence in an applied magnetic field confirm the presence of Mn in individual quantum dots. The width of PL lines of the single CdMnTe dots is 3 meV due to magnetic moment fluctuations of the Mn ions. After rapid thermal annealing, the emission lines of individual magnetic quantum dots narrow significantly to 0.25 meV showing that effect of magnetic fluctuations is strongly reduced most probably due to an increase in the average quantum dot size. These results suggest a way to tune the spin properties of magnetic quantum dots.

cond-mat.mtrl-sci↗

arXiv2003

Exciton Spin Relaxation Time in Quantum Dots Measured by Continuous-Wave Photoluminescence Spectroscopy

We demonstrate a new method of measuring the exciton spin relaxation time in semiconductor nanostructures by continuous-wave photoluminescence. We find that for self-assembled CdTe quantum dots the degree of circular polarization of emission is larger when exciting polarized excitons into the lower energy spin state than in the case when the excitons are excited into the higher energy spin state. A simple rate equation model gives the exciton spin relaxation time in CdTe quantum dots equal to 4.8+/-0.3 ns, significantly longer than the quantum dot exciton recombination time 300 ps.

cond-mat.mtrl-sci↗

arXiv2003

Exciton spin relaxation in resonantly excited CdTe/ZnTe self-assembled quantum dots

We study the exciton spin relaxation in CdTe self-assembled quantum dots by using polarized photoluminescence spectroscopy in magnetic field. The experiments on single CdTe quantum dots and on large quantum dot ensembles show that by combining phonon-assisted absorption with circularly polarized resonant excitation the spin-polarized excitons are photo-excited directly into the ground states of quantum dots. We find that for single symmetric quantum dots at B=0 T, where the exciton levels are degenerate, the spins randomize very rapidly, so that no net spin polarization is observed. In contrast, when this degeneracy is lifted by applying external magnetic field, optically created spin-polarized excitons maintain their polarization on a time scale much longer than the exciton recombination time. We also observe that the exciton spin polarization is conserved when the splitting between exciton states is caused by quantum dot shape asymmetry. Similar behavior is found in a large ensemble of CdTe quantum dots. These results show that while exciton spins scatter rapidly between degenerate states, the spin relaxation time increases by orders of magnitude as the exciton spin states in a quantum dot become non-degenerate. Finally, due to strong electronic confinement in CdTe quantum dots, the large spin polarization of excitons shows no dependence on the number of phonons emitted between the virtual state and the exciton ground state during the excitation.

cond-mat.soft↗

arXiv2001

Diluted magnetic semiconductor quantum dots: an extreme sensitivity of the hole Zeeman splitting on the aspect ratio of the confining potential

The valence band states confined in infinitely deep quantum dots made of diluted magnetic semiconductors (DMS) are considered theoretically. A complex anisotropic structure of the valence bands in DMSs with cubic symmetry described by the full Luttinger Hamiltonian is taken into account. It is found that the Zeeman splitting is very sensitive to the shape of the confining potential and, in particular, to its orientation relative to the direction of an external magnetic field. This sensitivity has its origin in a mixing of different spin components of a hole wave function which takes place for finite hole wave vectors ${\bf k}$. Several consequences of the effect are discussed, including a possibility to control the inter-dot tunneling by an external magnetic field. It is shown also that the polarizations of optical transitions in a single DMS quantum dot depend on details of geometry of its confining potential as well as on the strength of the magnetic field.

cond-mat↗

arXiv2001

Optical Method for Determination of Carrier Density in Modulation Doped Quantum Wells

An optical method is suggested to determine the concentration of two-dimensional electrons in modulation-doped quantum wells at low and moderate electron densities between 10^{9} and 2x10^{11} cm^{-2}. The method is based on an analysis of magneto-reflectivity spectra of charged excitons (trions). The circular polarization degree and the oscillator strength of the charged excitons contain information about the density and spin polarization of two-dimensional electron gas. The method is applied to CdTe/(Cd,Mg)Te and ZnSe/Zn,Mg)(S,Se) heterostructures.

cond-mat.str-el↗

arXiv2000

Inhomogeneous Broadening of Exciton Lines in Magneto-Optical Reflection from CdTe/CdMgTe Quantum Wells

An approach is proposed to determine parameters of homogeneous and inhomogeneous broadening for reflection lines of quasi-two-dimensional excitons in semiconductor quantum well structures. A phenomenological model is developed taking into account fluctuations of the exciton energy which are expected to cause inhomogeneous broadening of exciton reflectivity lines. This concept is applied to magneto-optical studies of CdTe/(Cd,Mg)Te single quantum well heterostructures containing a two-dimensional electron gas. By the analysis of excitonic reflection spectra in magnetic fields the parameters of homogeneous and inhomogeneous broadening of the exciton as well as their temperature dependencies were obtained.

cond-mat.str-el↗