arXiv subjects

J. P. Kotthaus

Publications and source records attributed to J. P. Kotthaus.

46 records · Page 3Linked to original sources

arXiv1998

Nano-ploughed Josephson Junctions as on-chip Radiation Sources

A new technique is presented which enables the fabrication of highly transparent Josephson junctions in combination with mesoscopic devices. We utilize a modified AFM tip to plough grooves into superconducting material, thus defining a weak link. This weak link is made within the superconducting split-gates, which are used to electrostatically form a conventional quantum dot and serves as a source of millimeter wave radiation around 100 GHz. We show the characteristics of typical junctions built and discuss their high-frequency properties. We find that the millimeter wave emission of the weak link leads to a bolometric effect in the case of quantum point contact spectroscopy.

cond-mat.mes-hall↗

arXiv1998

Nanolithography by non-contact AFM induced local oxidation : Fabrication of tunneling barriers suitable for single electron devices

We study local oxidation induced by dynamic atomic force microscopy (AFM), commonly called TappingMode AFM. This minimizes the field induced forces, which cause the tip to blunt, and enables us to use very fine tips. We are able to fabricate Ti/TiOx line grids with 18 nm period and well defined isolating barriers as small as 15 nm. These junctions show a non-linear current-voltage characteristic and an exponential dependence of the conductance on the oxide width, indicating tunneling as the dominant conduction mechanism. From the conductance - barrier width dependence we derive a barrier height of 178 meV. Numerical calculations of the lateral field distribution for different tip geometries allow to design the optimum tip for the most localised electric field. The electron-beam-deposition (EBD) technique makes it possible to actually produce tips of the desired geometry.

cond-mat.mes-hall↗

arXiv1998

Josephson Junctions defined by a Nano-Plough

We define superconducting constrictions by ploughing a deposited Aluminum film with a scanning probe microscope. The microscope tip is modified by electron beam deposition to form a nano-plough of diamond-like hardness, what allows the definition of highly transparent Josephson junctions. Additionally a dc-SQUID is fabricated to verify appropriate functioning of the junctions. The devices are easily integrated in mesoscopic devices as local radiation sources and can be used as tunable on-chip millimeter wave sources.

cond-mat.mes-hall↗

arXiv1997

Parallel Quantum-Point-Contacts as High-Frequency-Mixers

We present the results of high-frequency mixing experiments performed upon parallel quantum point-contacts defined in the two-dimensional electron gas of an Al_{x}Ga_{1-x}As/GaAs-heterostructure. The parallel geometry, fabricated using a novel double-resist technology, enables the point-contact device to be impedance matched over a wide frequency range and, in addition, increases the power levels of the mixing signal while simultaneously reducing the parasitic source-drain capacitance. Here, we consider two parallel quantum point-contact devices with 155 and 110 point-contacts respectively; both devices operated successfully at liquid helium and liquid nitrogen temperatures with a minimal conversion loss of 13 dB.

cond-mat.mes-hall↗

arXiv1997

Lateral superlattices as voltage-controlled traps for excitons

We demonstrate the localisation of quantum well excitons in a periodic array of linear traps using photoluminescence experiments. The excitonic traps are induced by applying spatially alternating external voltages via interdigitated metal gates. The localisation originates from the periodical modulation of the strength of the quantum-confined Stark effect in the plane of the quantum well. In our experiments, the trap depth is easily tuned by the voltages applied to the interdigitated gates. Furthermore, we find that a perpendicular magnetic field reduces the exciton diffusion length. In short-period lateral superlattices, we observe a magnetic-field-induced stabilisation of excitons in the presence of strong in-plane electric fields.

cond-mat.mes-hall↗

arXiv1997

Acoustically driven storage of light in a quantum well

The strong piezoelectric fields accompanying a surface acoustic wave on a semiconductor quantum well structure are employed to dissociate optically generated excitons and efficiently trap the created electron hole pairs in the moving lateral potential superlattice of the sound wave. The resulting spatial separation of the photogenerated ambipolar charges leads to an increase of the radiative lifetime by orders of magnitude as compared to the unperturbed excitons. External and deliberate screening of the lateral piezoelectric fields triggers radiative recombination after very long storage times at a remote location on the sample.

cond-mat.mes-hall↗

arXiv1996

Acousto-optic effects of surface acoustic waves in semiconductor quantum well structures

We report on recent experiments investigating the modification of the inter-band optical response of a piezoelectric semiconductor quantum well structure under the influence of intense short period surface acoustic waves. Experimentally, we study the photoluminescence (PL) of an undoped strained InGaAs/GaAs quantum well on which surface acoustic waves are propagated in the GHz regime. We observe a pronounced influence on the PL, both in intensity as well as in energetic position: Above a critical acoustic power density and corresponding lateral piezoelectric field strength, we observe a quenching of the excitons resulting in a strong decrease of the PL intensity. Using two transducers in a cavity resonator geometry, we can create a standing surface acoustic wave and hence control the nature and efficiency of the acoustic transport of the photoexcited electrons and holes.

cond-mat↗

arXiv1996

Far-infrared and capacitance spectroscopy of self-assembled InAs quantum dots

We review a number of recent experiments which are probing ground state and excitations of few-electron systems in self-assembled InAs quantum dots. Far-infrared spectroscopy, together with local as well as large-scale capacitive probing allows for a detailed investigation of the different contributions to the many-particle spectrum in the dots. The influence of electron--electron interactions on the ground state and the excitations is discussed.

cond-mat↗

arXiv1996

Single-electron charging of self-assembled InAs quantum dots

The many-particle ground state and excitations of self-assembled InAs quantum dots are investigated using far-infrared (FIR) and capacitance spectroscopy. The contributions of quantization and charging energies to the $n$--electron energy spectrum are determined. For $n = 1$, 2, we find good agreement with a parabolic model; for higher filling, the Coulomb interaction reveals itself not only in the capacitance, but also in the FIR excitations

cond-mat↗

arXiv1996

Shell structure and electron-electron interaction in self-assembled InAs quantum dots

Using far-infrared spectroscopy, we investigate the excitations of self-organized InAs quantum dots as a function of the electron number per dot, 1<n<6, which is monitored in situ by capacitance spectroscopy. Whereas the well-known two-mode spectrum is observed when the lowest s - states are filled, we find a rich excitation spectrum for n=3, which reflects the importance of electron-electron interaction in the present, strongly non-parabolic confining potential. From capacitance spectroscopy we find that the electronic shell structure in our dots gives rise to a distinct pattern in the charging energies which strongly deviates from the monotonic behavior of the Coulomb blockade found in mesoscopic or metallic structures.

cond-mat↗