arXiv subjects

J. P. Kotthaus

Publications and source records attributed to J. P. Kotthaus.

At least 37 records · Page 2Linked to original sources

arXiv2007

Micropatterned Electrostatic Traps for Indirect Excitons in Coupled GaAs Quantum Wells

We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well indirect excitons are trapped at the perimeter of a SiO2 area sandwiched between the surface of the GaAs heterostructure and a semitransparent metallic top gate. The trapping mechanism is well explained by a combination of the quantum confined Stark effect and local field enhancement. We find the one-dimensional trapping potentials in the quantum well plane to be nearly harmonic with high spring constants exceeding 10 keV/cm^2.

cond-mat.mes-hall↗

arXiv2007

An electrostatically defined serial triple quantum dot charged with few electrons

A serial triple quantum dot (TQD) electrostatically defined in a GaAs/AlGaAs heterostructure is characterized by using a nearby quantum point contact as charge detector. Ground state stability diagrams demonstrate control in the regime of few electrons charging the TQD. An electrostatic model is developed to determine the ground state charge configurations of the TQD. Numerical calculations are compared with experimental results. In addition, the tunneling conductance through all three quantum dots in series is studied. Quantum cellular automata processes are identified, which are where charge reconfiguration between two dots occurs in response to the addition of an electron in the third dot.

cond-mat.mes-hall↗

arXiv2006

A double-dot quantum ratchet driven by an independently biased quantum point contact

We study a double quantum dot (DQD) coupled to a strongly biased quantum point contact (QPC), each embedded in independent electric circuits. For weak interdot tunnelling we observe a finite current flowing through the unbiased Coulomb blockaded DQD in response to a strong bias on the QPC. The direction of the current through the DQD is determined by the relative detuning of the energy levels of the two quantum dots. The results are interpreted in terms of a quantum ratchet phenomenon in a DQD energized by a nearby QPC.

cond-mat.mes-hall↗

arXiv2006

Drift mobility of long-living excitons in coupled GaAs quantum wells

We observe high-mobility transport of indirect excitons in coupled GaAs quantum wells. A voltage-tunable in-plane potential gradient is defined for excitons by exploiting the quantum confined Stark effect in combination with a lithographically designed resistive top gate. Excitonic photoluminescence resolved in space, energy, and time provides insight into the in-plane drift dynamics. Across several hundreds of microns an excitonic mobility of >10^5 cm2/eVs is observed for temperatures below 10 K. With increasing temperature the excitonic mobility decreases due to exciton-phonon scattering.

cond-mat.other↗

arXiv2005

Molecular states in a one-electron double quantum dot

The transport spectrum of a strongly tunnel-coupled one-electron double quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure is studied. At finite source-drain-voltage we demonstrate the unambiguous identification of the symmetric ground state and the antisymmetric excited state of the double well potential by means of differential conductance measurements. A sizable magnetic field, perpendicular to the two-dimensional electron gas, reduces the extent of the electronic wave-function and thereby decreases the tunnel coupling. A perpendicular magnetic field also modulates the orbital excitation energies in each individual dot. By additionally tuning the asymmetry of the double well potential we can align the chemical potentials of an excited state of one of the quantum dots and the ground state of the other quantum dot. This results in a second anticrossing with a much larger tunnel splitting than the anticrossing involving the two electronic ground states.

cond-mat.mes-hall↗

arXiv2005

Direct control of the tunnel splitting in a one-electron double quantum dot

Quasi-static transport measurements are employed on a laterally defined tunnel-coupled double quantum dot. A nearby quantum point contact allows us to track the charge as added to the device. If charged with only up to one electron, the low-energy spectrum of the double quantum dot is characterized by its quantum mechanical interdot tunnel splitting. We directly measure its magnitude by utilizing particular anticrossing features in the stability diagram at finite source-drain bias. By modification of gate voltages defining the confinement potential as well as by variation of a perpendicular magnetic field we demonstrate the tunability of the coherent tunnel coupling.

cond-mat.mes-hall↗

arXiv2004

Periodic Field Emission from an Isolated Nano-Scale Electron Island

We observe field emission from an isolated nano-machined gold island. The island is able to mechanically oscillate between two facing electrodes, which provide recharging and detection of the emission current. We are able to trace and reproduce the transition from current flow through a rectangular tunneling barrier to the regime of field emission. A theoretical model via a master-equation reproduces the experimental data and shows deviation from the Fowler-Nordheim description due to the island's electric isolation.

cond-mat.mes-hall↗

arXiv2003

Single electron-phonon interaction in a suspended quantum dot phonon cavity

An electron-phonon cavity consisting of a quantum dot embedded in a free-standing GaAs/AlGaAs membrane is characterized in Coulomb blockade measurements at low temperatures. We find a complete suppression of single electron tunneling around zero bias leading to the formation of an energy gap in the transport spectrum. The observed effect is induced by the excitation of a localized phonon mode confined in the cavity. This phonon blockade of transport is lifted at magnetic fields where higher electronic states with nonzero angular momentum are brought into resonance with the phonon energy.

cond-mat.mes-hall↗

arXiv2002

Spin blockade in ground state resonance of a quantum dot

We present measurements on spin blockade in a laterally integrated quantum dot. The dot is tuned into the regime of strong Coulomb blockade, confining ~ 50 electrons. At certain electronic states we find an additional mechanism suppressing electron transport. This we identify as spin blockade at zero bias, possibly accompanied by a change in orbital momentum in subsequent dot ground states. We support this by probing the bias, magnetic field and temperature dependence of the transport spectrum. Weak violation of the blockade is modelled by detailed calculations of non-linear transport taking into account forbidden transitions.

cond-mat.mes-hall↗

arXiv2000

Determination of the complex microwave photoconductance of a single quantum dot

A small quantum dot containing approximately 20 electrons is realized in a two-dimensional electron system of an AlGaAs/GaAs heterostructure. Conventional transport and microwave spectroscopy reveal the dot's electronic structure. By applying a coherently coupled two-source technique, we are able to determine the complex microwave induced tunnel current. The amplitude of this photoconductance resolves photon-assisted tunneling (PAT) in the non-linear regime through the ground state and an excited state as well. The out-of-phase component (susceptance) allows to study charge relaxation within the quantum dot on a time scale comparable to the microwave beat period.

cond-mat.mes-hall↗

arXiv2000

Edge and bulk effects in the Terahertz-photoconductivity of an antidot superlattice

We investigate the Terahertz(THz)-response of a square antidot superlattice by means of photoconductivity measurements using a Fourier-transform-spectrometer. We detect, spectrally resolved, the cyclotron resonance and the fundamental magnetoplasmon mode of the periodic superlattice. In the dissipative transport regime both resonances are observed in the photoresponse. In the adiabatic transport regime, at integer filling factor $ν=2$, only the cyclotron resonance is observed. From this we infer that different mechanisms contribute to converting the absorption of THz-radiation into photoconductivity in the cyclotron and in the magnetoplasmon resonances, respectively.

cond-mat.mes-hall↗

arXiv2000

Nonlinear acousto-electric transport in a two-dimensional electron system

We study both theoretically and experimentally the nonlinear interaction between an intense surface acoustic wave and a two-dimensional electron plasma in semiconductor-piezocrystal hybrid structures. The experiments on hybrid systems exhibit strongly nonlinear acousto-electric effects. The plasma turns into moving electron stripes, the acousto-electric current reaches its maximum, and the sound absorption strongly decreases. To describe the nonlinear phenomena, we develop a coupled-amplitude method for a two-dimensional system in the strongly nonlinear regime of interaction. At low electron densities the absorption coefficient decreases with increasing sound intensity, whereas at high electron density the absorption coefficient is not a monotonous function of the sound intensity. High-harmonic generation coefficients as a function of the sound intensity have a nontrivial behavior. Theory and experiment are found to be in a good agreement.

cond-mat.mes-hall↗

arXiv2000

Microwave spectroscopy on a double quantum dot with an on-chip Josephson oscillator

We present measurements on microwave spectroscopy on a double quantum dot with an on-chip microwave source. The quantum dots are realized in the two-dimensional electron gas of an AlGaAs/GaAs heterostructure and are weakly coupled in series by a tunnelling barrier forming an 'ionic' molecular state. We employ a Josephson oscillator formed by a long Nb/Al-AlO$_x$/Nb junction as a microwave source. We find photon-assisted tunnelling sidebands induced by the Josephson oscillator, and compare the results with those obtained using an externally operated microwave source.

cond-mat.mes-hall↗

arXiv1999

Spectroscopy of nanoscopic semiconductor rings

Making use of self-assembly techniques, we demonstrate the realization of nanoscopic semiconductor quantum rings in which the electronic states are in the true quantum limit. We employ two complementary spectroscopic techniques to investigate both the ground states and the excitations of these rings. Applying a magnetic field perpendicular to the plane of the rings, we find that when approximately one flux quantum threads the interior of each ring, a change in the ground state from angular momentum $\ell = 0$ to $\ell = -1$ takes place. This ground state transition is revealed both by a drastic modification of the excitation spectrum and by a change in the magnetic field dispersion of the single-electron charging energy.

cond-mat.mes-hall↗

arXiv1999

Stable integration of isolated cell membrane patches in a nanomachined aperture: a step towards a novel device for membrane physiology

We investigate the microscopic contact of a cell/semiconductor hybrid. The semiconductor is nanostructured with the aim of single channel recording of ion channels in cell membranes. This approach will overcome many limitations of the classical patch-clamp technique. The integration of silicon-based devices 'on-chip' promises novel types of experiments on single ion channels.

cond-mat.soft↗

arXiv1999

Lateral tunneling through the controlled barrier between edge channels in a two-dimentional electron system

We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine strip using an atomic force microscope, between edge channels at the depletion-induced edges of a gated two-dimensional electron system. For a sufficiently high barrier a typical current-voltage characteristic is found to be strongly asymmetric and include, apart from a positive tunneling branch, the negative branch that corresponds to the current overflowing the barrier. We establish the barrier height depends linearly on both gate voltage and magnetic field and we describe the data in terms of electron tunneling between the outermost edge channels.

cond-mat.mes-hall↗

arXiv1999

Anomalous Kondo-effect in Quantum Dot at non-zero bias

We present measurements on the Kondo-effect in a small quantum dot connected strongly to one lead and weakly to the other. The conductance of the dot reveals an offset of the Kondo resonance at zero magnetic field. While the resonance persists in the negative bias regime, it is suppressed in the opposite direction. This demonstrates the pinning of the Kondo resonance to the Fermi levels of the left and right lead. As an outlook we exploit the spin blockade effect to gain information about the spin state of the quantum dot in the Kondo regime.

cond-mat.mes-hall↗

arXiv1999

Statistics of the Coulomb blockade peak spacings of a silicon quantum dot

We present an experimental study of the fluctuations of Coulomb blockade peak positions of a quantum dot. The dot is defined by patterning the two-dimensional electron gas of a silicon MOSFET structure using stacked gates. This permits variation of the number of electrons on the quantum dot without significant shape distortion. The ratio of charging energy to single particle energy is considerably larger than in comparable GaAs/AlGaAs quantum dots. The statistical distribution of the conductance peak spacings in the Coulomb blockade regime was found to be unimodal and does not follow the Wigner surmise. The fluctuations of the spacings are much larger than the typical single particle level spacing and thus clearly contradict the expectation of random matrix theory.

cond-mat.mes-hall↗