arXiv subjects

J. Stahl

Publications and source records attributed to J. Stahl.

3 recordsLinked to original sources

arXiv2019

Extended Magnetic Dome Induced by Low Pressures in Superconducting FeSe$_\mathrm{1\text{-}x}$S$_\mathrm{x}$

We report muon spin rotation ($μ$SR) and magnetization measurements under pressure on Fe$_{1+δ}$Se$_\mathrm{1\text{-}x}$S$_\mathrm{x}$ with x $\approx 0.11$.Above $p\approx0.6$ GPa we find microscopic coexistence of superconductivity with an extended dome of long range magnetic order that spans a pressure range between previously reported separated magnetic phases. The magnetism initially competes on an atomic scale with the coexisting superconductivity leading to a local maximum and minimum of the superconducting $T_\mathrm{c}(p)$. The maximum of $T_\mathrm{c}$ corresponds to the onset of magnetism while the minimum coincides with the pressure of strongest competition. A shift of the maximum of $T_\mathrm{c}(p)$ for a series of single crystals with x up to 0.14 roughly extrapolates to a putative magnetic and superconducting state at ambient pressure for x $\geq0.2$.

cond-mat.supr-con↗

arXiv2006

Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells Measured by Spin Photocurrents

The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are applied to determine the relative strengths of Rashba and Dresselhaus band spin-splitting in (001)-grown GaAs and InAs based two dimensional electron systems. We observed that shifting the $δ$-doping plane from one side of the quantum well to the other results in a change of sign of the photocurrent caused by Rashba spin-splitting while the sign of the Dresselhaus term induced photocurrent remains. The measurements give the necessary feedback for technologists looking for structures with equal Rashba and Dresselhaus spin-splittings or perfectly symmetric structures with zero Rashba constant.

cond-mat.mes-hall↗

arXiv2002

Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation

The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon wafers during detector processing (result from CERN-RD48). An updated survey on hadron induced damage is given in the first article. Several improvements are outlined especially with respect to antiannealing problems associated with detector storage during LHC maintenance periods. Open questions are outlined in the final section, among which are a full understanding of differences found between proton and neutron induced damage, process related effects changing the radiation tolerance in addition to the oxygen content and the lack of understanding the changed detector properties on the basis of damage induced point and cluster defects. In addition to float zone silicon, so far entirely used for detector fabrication,Czochralski silicon was also studied and first promising results are shown. The other three papers deal with gamma induced damage including also defects introduced either by processing steps or being inherent to the as grown silicon. However the focus is on measurements after gamma irradiation in a wide dose range. Both the changes in detector properties and defect characterisations have been studied. For the first time it is shown that in contrast to a standard process oxygenated silicon detectors withstand an irradiation dose of up to 1 Grad with only minor deterioration. Also it is shown for the first time that in this case the detector properties can directly be explained by the damage induced point defects. This 1:1 correlation is extremely promising for all future defect engineering work.

physics.ins-det↗