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Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells Measured by Spin Photocurrents

S. Giglberger·L. E. Golub·V. V. Bel'kov·S. N. Danilov·D. Schuh·Ch. Gerl·F. Rohlfing·J. Stahl·W. Wegscheider·D. Weiss·W. Prettl·S. D. Ganichev
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Abstract

The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are applied to determine the relative strengths of Rashba and Dresselhaus band spin-splitting in (001)-grown GaAs and InAs based two dimensional electron systems. We observed that shifting the $δ$-doping plane from one side of the quantum well to the other results in a change of sign of the photocurrent caused by Rashba spin-splitting while the sign of the Dresselhaus term induced photocurrent remains. The measurements give the necessary feedback for technologists looking for structures with equal Rashba and Dresselhaus spin-splittings or perfectly symmetric structures with zero Rashba constant.

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S. Giglberger, L. E. Golub, V. V. Bel'kov, S. N. Danilov, D. Schuh, Ch. Gerl, F. Rohlfing, J. Stahl, W. Wegscheider, D. Weiss, W. Prettl, S. D. Ganichev. 2006-10-02. Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells Measured by Spin Photocurrents. https://doi.org/10.1103/physrevb.75.035327

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