Searcharxiv⌕ Search

arXiv subjects

Jabez J. McClelland

Publications and source records attributed to Jabez J. McClelland.

14 recordsLinked to original sources

CMOS-integrated superparamagnetic tunnel junction-based p-bit

Probabilistic computers offer promising solutions for computationally hard problems in domains such as combinatorial optimization and machine learning. A key building block in these systems is the probabilistic bit (p-bit), which relies on superparamagnetic tunnel junctions (sMTJs) as its source of randomness. A challenging threshold to cross for scaling sMTJ-based p-bit systems is integration of sMTJs with CMOS technology. In this work, we present experimental results of a p-bit unit cell using sMTJs integrated with 130 nm CMOS technology and demonstrate that the sMTJ's resistance fluctuations can generate a corresponding fluctuating digital output voltage which is tunable via the input voltage. These findings establish the feasibility of CMOS-compatible, sMTJ-based probabilistic circuits and mark a key step toward scalable hardware for real-world probabilistic computing applications.

cs.ET↗

Sampling from exponential distributions in the time domain with superparamagnetic tunnel junctions

In the superparamagnetic regime, magnetic tunnel junctions switch between two resistance states due to random thermal fluctuations. The dwell time distribution in each state is exponential. We sample this distribution using a temporal encoding scheme, in which information is encoded in the time at which the device switches between its resistance states. We then develop a circuit element known as a probabilistic delay cell that applies an electrical current step to a superparamagnetic tunnel junction and a temporal measurement circuit that measures the timing of the first switching event. Repeated experiments confirm that these times are exponentially distributed. Temporal processing methods then allow us to digitally compute with these exponentially distributed probabilistic delay cells. We describe how to use these circuits in a Metropolis-Hastings stepper and in a weighted random sampler, both of which are computationally intensive applications that benefit from the efficient generation of exponentially distributed random numbers.

cs.ET↗

Scanning Thermal Microscopy in Air and Vacuum: A Comparison

We present measurements comparing scanning thermal microscopy in air and vacuum. Signal levels are compared and resolution is probed by scanning over the edge of a nanofabricated Ag square embedded in SiO2. Signals measured in air were seen to be 2.5 to 40 times larger than in vacuum. Furthermore, the air signals were stable while the vacuum signals varied significantly. Edge widths measured in air were approximately 39 % larger than those measured in vacuum. Our observations are consistent with the air measurements experiencing heat transfer from the surrounding sample via conduction and convection as well as the formation of a water-related meniscus at the tip-sample junction. These results contribute to the understanding of the complex heat exchange effects that can occur in scanning thermal microscopy when it is conducted in an ambient atmosphere.

physics.ins-det↗

Measurement-driven Langevin modeling of superparamagnetic tunnel junctions

Superparamagnetic tunnel junctions are important devices for a range of emerging technologies, but most existing compact models capture only their mean switching rates. Capturing qualitatively accurate analog dynamics of these devices will be important as the technology scales up. Here we present results using a one-dimensional overdamped Langevin equation that captures statistical properties of measured time traces, including voltage histograms, drift and diffusion characteristics as measured with Kramers-Moyal coefficients, and dwell times distributions. While common macrospin models are more physically-motivated magnetic models than the Langevin model, we show that for the device measured here, they capture even fewer of the measured experimental behaviors.

physics.app-ph↗

Measurement-driven neural-network training for integrated magnetic tunnel junction arrays

The increasing scale of neural networks needed to support more complex applications has led to an increasing requirement for area- and energy-efficient hardware. One route to meeting the budget for these applications is to circumvent the von Neumann bottleneck by performing computation in or near memory. An inevitability of transferring neural networks onto hardware is that non-idealities such as device-to-device variations or poor device yield impact performance. Methods such as hardware-aware training, where substrate non-idealities are incorporated during network training, are one way to recover performance at the cost of solution generality. In this work, we demonstrate inference on hardware neural networks consisting of 20,000 magnetic tunnel junction arrays integrated on a complementary metal-oxide-semiconductor chips that closely resembles market-ready spin transfer-torque magnetoresistive random access memory technology. Using 36 dies, each containing a crossbar array with its own non-idealities, we show that even a small number of defects in physically mapped networks significantly degrades the performance of networks trained without defects and show that, at the cost of generality, hardware-aware training accounting for specific defects on each die can recover to comparable performance with ideal networks. We then demonstrate a robust training method that extends hardware-aware training to statistics-aware training, producing network weights that perform well on most defective dies regardless of their specific defect locations. When evaluated on the 36 physical dies, statistics-aware trained solutions can achieve a mean misclassification error on the MNIST dataset that differs from the software-baseline by only 2 %. This statistics-aware training method could be generalized to networks with many layers that are mapped to hardware suited for industry-ready applications.

cs.ET↗

Layer Ensemble Averaging for Improving Memristor-Based Artificial Neural Network Performance

Artificial neural networks have advanced due to scaling dimensions, but conventional computing faces inefficiency due to the von Neumann bottleneck. In-memory computation architectures, like memristors, offer promise but face challenges due to hardware non-idealities. This work proposes and experimentally demonstrates layer ensemble averaging, a technique to map pre-trained neural network solutions from software to defective hardware crossbars of emerging memory devices and reliably attain near-software performance on inference. The approach is investigated using a custom 20,000-device hardware prototyping platform on a continual learning problem where a network must learn new tasks without catastrophically forgetting previously learned information. Results demonstrate that by trading off the number of devices required for layer mapping, layer ensemble averaging can reliably boost defective memristive network performance up to the software baseline. For the investigated problem, the average multi-task classification accuracy improves from 61 % to 72 % (< 1 % of software baseline) using the proposed approach.

cs.ET↗

Programmable electrical coupling between stochastic magnetic tunnel junctions

Superparamagnetic tunnel junctions (SMTJs) are promising sources of randomness for compact and energy efficient implementations of probabilistic computing techniques. Augmenting an SMTJ with electronic circuits, to convert the random telegraph fluctuations of its resistance state to stochastic digital signals, gives a basic building block known as a probabilistic bit or $p$-bit. Though scalable probabilistic computing methods connecting $p$-bits have been proposed, practical implementations are limited by either minimal tunability or energy inefficient microprocessors-in-the-loop. In this work, we experimentally demonstrate the functionality of a scalable analog unit cell, namely a pair of $p$-bits with programmable electrical coupling. This tunable coupling is implemented with operational amplifier circuits that have a time constant of approximately 1us, which is faster than the mean dwell times of the SMTJs over most of the operating range. Programmability enables flexibility, allowing both positive and negative couplings, as well as coupling devices with widely varying device properties. These tunable coupling circuits can achieve the whole range of correlations from $-1$ to $1$, for both devices with similar timescales, and devices whose time scales vary by an order of magnitude. This range of correlation allows such circuits to be used for scalable implementations of simulated annealing with probabilistic computing.

cs.ET↗

Implementation of a Binary Neural Network on a Passive Array of Magnetic Tunnel Junctions

The increasing scale of neural networks and their growing application space have produced demand for more energy- and memory-efficient artificial-intelligence-specific hardware. Avenues to mitigate the main issue, the von Neumann bottleneck, include in-memory and near-memory architectures, as well as algorithmic approaches. Here we leverage the low-power and the inherently binary operation of magnetic tunnel junctions (MTJs) to demonstrate neural network hardware inference based on passive arrays of MTJs. In general, transferring a trained network model to hardware for inference is confronted by degradation in performance due to device-to-device variations, write errors, parasitic resistance, and nonidealities in the substrate. To quantify the effect of these hardware realities, we benchmark 300 unique weight matrix solutions of a 2-layer perceptron to classify the Wine dataset for both classification accuracy and write fidelity. Despite device imperfections, we achieve software-equivalent accuracy of up to 95.3 % with proper tuning of network parameters in 15 x 15 MTJ arrays having a range of device sizes. The success of this tuning process shows that new metrics are needed to characterize the performance and quality of networks reproduced in mixed signal hardware.

cs.ET↗

Mutual control of stochastic switching for two electrically coupled superparamagnetic tunnel junctions

Superparamagnetic tunnel junctions (SMTJs) are promising sources for the randomness required by some compact and energy-efficient computing schemes. Coupling SMTJs gives rise to collective behavior that could be useful for cognitive computing. We use a simple linear electrical circuit to mutually couple two SMTJs through their stochastic electrical transitions. When one SMTJ makes a thermally induced transition, the voltage across both SMTJs changes, modifying the transition rates of both. This coupling leads to significant correlation between the states of the two devices. Using fits to a generalized Néel-Brown model for the individual thermally bistable magnetic devices, we can accurately reproduce the behavior of the coupled devices with a Markov model.

cond-mat.mes-hall↗

Streaming Batch Eigenupdates for Hardware Neuromorphic Networks

Neuromorphic networks based on nanodevices, such as metal oxide memristors, phase change memories, and flash memory cells, have generated considerable interest for their increased energy efficiency and density in comparison to graphics processing units (GPUs) and central processing units (CPUs). Though immense acceleration of the training process can be achieved by leveraging the fact that the time complexity of training does not scale with the network size, it is limited by the space complexity of stochastic gradient descent, which grows quadratically. The main objective of this work is to reduce this space complexity by using low-rank approximations of stochastic gradient descent. This low spatial complexity combined with streaming methods allows for significant reductions in memory and compute overhead, opening the doors for improvements in area, time and energy efficiency of training. We refer to this algorithm and architecture to implement it as the streaming batch eigenupdate (SBE) approach.

cs.LG↗

Stateful characterization of resistive switching TiO2 with electron beam induced currents

Metal oxide resistive switches are increasingly important as possible artificial synapses in next generation neuromorphic networks. Nevertheless, there is still no codified set of tools for studying properties of the devices. To this end, we demonstrate electron beam induced current measurements as a powerful method to monitor the development of local resistive switching in TiO2 based devices. By comparing beam-energy dependent electron beam induced currents with Monte Carlo simulations of the energy absorption in different device layers, it is possible to deconstruct the origins of filament image formation and relate this to both morphological changes and the state of the switch. By clarifying the contrast mechanisms in electron beam induced current microscopy it is possible to gain new insights into the scaling of the resistive switching phenomenon and observe the formation of a current leakage region around the switching filament. Additionally, analysis of symmetric device structures reveals propagating polarization domains.

cond-mat.mtrl-sci↗

Imaging Nanophotonic Modes of Microresonators using a Focused Ion Beam

Optical microresonators have proven powerful in a wide range of applications, including cavity quantum electrodynamics, biosensing, microfludics, and cavity optomechanics. Their performance depends critically on the exact distribution of optical energy, confined and shaped by the nanoscale device geometry. Near-field optical probes can image this distribution, but the physical probe necessarily perturbs the near field, which is particularly problematic for sensitive high quality factor resonances. We present a new approach to mapping nanophotonic modes that uses a controllably small and local optomechanical perturbation introduced by a focused lithium ion beam. An ion beam (radius about 50 nm) induces a picometer-scale dynamic deformation of the resonator surface, which we detect through a shift in the optical resonance wavelength. We map five modes of a silicon microdisk resonator (Q > 20,000) with both high spatial and spectral resolution. Our technique also enables in-situ observation of ion implantation damage and relaxation dynamics in a silicon lattice.

physics.optics↗

Sub-Doppler laser cooling and magnetic trapping of erbium

We investigate cooling mechanisms in magneto-optically and magnetically trapped erbium. We find efficient sub-Doppler cooling in our trap, which can persist even in large magnetic fields due to the near degeneracy of two Lande g factors. Furthermore, a continuously loaded magnetic trap is demonstrated where we observe temperatures below 25 microkelvin. These favorable cooling and trapping properties suggest a number of scientific possibilities for rare-earth atomic physics, including narrow linewidth laser cooling and spectroscopy, unique collision studies, and degenerate bosonic and fermionic gases with long-range magnetic dipole coupling.

physics.atom-ph↗

Narrow-line magneto-optical cooling and trapping of strongly magnetic atoms

Laser cooling on weak transitions is a useful technique for reaching ultracold temperatures in atoms with multiple valence electrons. However, for strongly magnetic atoms a conventional narrow-line magneto-optical trap (MOT) is destabilized by competition between optical and magnetic forces. We overcome this difficulty in Er by developing an unusual narrow-line MOT that balances optical and magnetic forces using laser light tuned to the blue side of a narrow (8 kHz) transition. The trap population is spin-polarized with temperatures reaching below 2 microkelvin. Our results constitute an alternative method for laser cooling on weak transitions, applicable to rare-earth-metal and metastable alkaline earth elements.

physics.atom-ph↗