arXiv subjects

Jacek Gosciniak

Publications and source records attributed to Jacek Gosciniak.

21 records · Page 2Linked to original sources

arXiv2019

Toward Physically Unclonable Functions from Plasmonics-Enhanced Silicon Disc Resonators

The omnipresent digitalization trend has enabled a number of related malicious activities, ranging from data theft to disruption of businesses, counterfeiting of devices, and identity fraud, among others. Hence, it is essential to implement security schemes and to ensure the reliability and trustworthiness of electronic circuits. Toward this end, the concept of physically unclonable functions (PUFs) has been established at the beginning of the 21st century. However, most PUFs have eventually, at least partially, fallen short of their promises, which are unpredictability, unclonability, uniqueness, reproducibility, and tamper resilience. That is because most PUFs directly utilize the underlying microelectronics, but that intrinsic randomness can be limited and may thus be predicted, especially by machine learning. Optical PUFs, in contrast, are still considered as promising---they can derive strong, hard-to-predict randomness independently from microelectronics, by using some kind of "optical token." Here we propose a novel concept for plasmonics-enhanced optical PUFs, or peo-PUFs in short. For the first time, we leverage two highly nonlinear phenomena in conjunction by construction: (i) light propagation in a silicon disk resonator, and (ii) surface plasmons arising from nanoparticles arranged randomly on top of the resonator. We elaborate on the physical phenomena, provide simulation results, and conduct a security analysis of peo- PUFs for secure key generation and authentication. This study highlights the good potential of peo-PUFs, and our future work is to focus on fabrication and characterization of such PUFs.

physics.app-ph↗

arXiv2019

High bandwidth waveguide-integrated plasmonic germanium photodetector

Here we propose a waveguide-integrated germanium plasmonic photodetector that is based on a long-range dielectric-loaded surface plasmon polariton waveguide configuration. As this configuration ensures a long propagation distance, i.e., small absorption into metal, and a good mode field confinement, i.e., high interaction of the electric field with a germanium material, it is perfect for a realization of plasmonic germanium photodetectors. Such a photodetector even without optimization provides a responsivity exceeding 1 A/W for both wavelengths of 1310 nm and 1550 nm. To achieve such a responsivity, only a 5 μm-long waveguide is required for 1310 nm and 30 μm-long for 1550 nm. With optimization this value can be highly improved. In the proposed arrangement a metal stripe simultaneously supports a propagating mode and serves as one of the electrodes, while the second electrode is located a short distance from the waveguide. As a propagating mode is tightly confined to the germanium ridge, the external electrode can be placed very close to the waveguide without disturbing it. As such, the distance between electrodes can be smaller than 350 nm which allows one to achieve a bandwidth exceeding 100 GHz. However, as most of the carriers are generated inside a distance of 100 nm from a stripe, a bandwidth exceeding 150 GHz can be achieved for a bias voltage of -4 V.

physics.app-ph↗

arXiv2019

CMOS-compatible titanium nitride for on-chip plasmonic Schottky photodetector

Here, we propose titanium nitride (TiN) as an alternative plasmonic material for an on-chip silicon plasmonic Schottky photodetector that is based on an internal photoemission process and operating at telecom wavelengths. The examined structure employs an asymmetric metal-semiconductor-metal waveguide structure with one of the electrodes being gold and the second either gold, titanium or titanium nitride. Apart from the excellent optical properties desired for this type of photodetector such as high absorption losses and reasonably high real part of the permittivity, titanium nitride is a CMOS-compatible material that enables easy integration with existing CMOS technology. For the first time, we find a Schottky barrier height of 0.67 eV for titanium nitride on p-doped silicon, which is very close to the optimal value of 0.69 eV. This value ensures very high signal-to-noise ratio of the photodetector operating at a wavelength of 1550 nm. Additionally, TiN provides shorter penetration depth of the mode into metal compared to Ti, which enhances transmission probability of hot electrons to a semiconductor and gives rise to responsivity enhancement.

physics.app-ph↗