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Jacob B. Khurgin

Publications and source records attributed to Jacob B. Khurgin.

At least 19 recordsLinked to original sources

Pathway to Optical-Cycle Dynamic Photonics: Extreme Electron Temperatures in Transparent Conducting Oxides

We theoretically demonstrate that transparent conducting oxides (TCOs) exhibit oscillatory and sign-reversing dynamic modulation in transmittance on the order of a few optical cycles under extreme electron temperatures, providing a possible explanation for TCO dynamics observed in earlier experiments. We present an inverse-designed multilayer cavity incorporating an ultrathin TCO layer, which supports an oscillatory optical response more pronounced than those previously observed experimentally in TCOs. This approach yields transmittance oscillations with a characteristic period of ~20fs, which corresponds to approximately four optical cycles of the 1.431μm probe beam. To achieve a similar oscillatory modulation in Δn, we incorporate a TCO electron-acceptor layer on top of the inverse-designed cavity, enabling thermionic carrier injection at the TCO junction. The resulting acceptor layer exhibits a striking Δn response as fast as 20fs, corresponding to only three optical cycles of the 1.8-2.0μm probe, and can be further tailored into the sub-optical-cycle regime. The findings could both clarify the previously unexplained transient dynamics in TCOs and, for the first time, demonstrate the critical role of electron temperatures in driving oscillatory dynamic responses.

physics.optics

Enhanced Interband Optical Nonlinearities from Coupled Quantum Wells

The recent, rapid advances in nonlinear chipscale nanophotonics in the visible and near-infrared have been largely driven by manipulating the local dielectric environment proximate to decades-old workhorse bulk nonlinear optical materials, rather than increasing the inherent strength of their nonlinear response. While proposed decades ago, we demonstrate the first experimental realization of a new class of designer nonlinear materials that leverage the interband optical transition in asymmetric structures to provide strong second order susceptibility, $χ^{(2)}$. Using simple AlGaAs/GaAs coupled quantum wells operating in the near-infrared as a prototype, we observed strong second harmonic generation enhancement of 1550 nm to 775 nm over bulk controls. Extracted $χ^{(2)}$ values were as high as 2750 pm/V, which is $>$7x that of bulk GaAs. Furthermore, measured susceptibilities agreed well with quantum mechanical calculations of $χ^{(2)}$ using layer profiles extracted from electron microscopy. Growth interruptions were employed to improve interfacial abruptness in response to electron microscopy characterization, resulting in increased $χ^{(2)}$ toward the simulation predictions for ideal heterointerfaces. More complex layer designs showed predicted $χ^{(2)}$ up to 7 nm/V. Such materials are anticipated to find myriad applications, including entangled photon generation at telecommunications wavelengths for chipscale quantum information processing.

physics.optics

Approaching the Low Optical Loss Limit of Plasmonics using Potassium Metals

Plasmonics enables the miniaturization of photonic devices beyond the optical diffraction limit,yet its potential is hindered by inherently large ohmic losses. Hence, it is prudent to explore low loss alternatives to the current mainstay of plasmonics-the noble metals. In this work, we demonstrate the potential of potassium as a plasmonic material with intrinsically low losses in the optical region. The ultraflat, high quality potassium film, fabricated via a rapid slipping-assisted oxide-free crystallization process, achieves an experimentally observed optical damping rate of 3.7 meV,with a measured imaginary permittivity of approximately 0.1 across the entire visible to near-infrared range (400-2000 nm). Near field optical spectroscopic measurements further confirmed the reduced losses by revealing deeply subwavelength confinement of optical modes. This result enhances our understanding of the factors governing plasmonic materials and devices and establishes a new platform for exploring extreme light-matter interactions in a variety of plasmonic systems.

physics.optics

On-chip electro-optically tunable narrow linewidth Brillouin microlasers implemented in thin film lithium niobate

On-chip narrow linewidth microlasers with real-time wavelength tunability are highly desirable for various applications including precision metrology, quantum technology, and coherent information processing. Realizing such laser remains a challenge despite significant advances made by various groups in recent years [Nat. Commun. 13, 5344 (2022); Nature 615, 411 (2023); Appl. Phys. Lett. 124, 131101 (2024); Nat. Photonics 13, 60 (2019)]. In this work, we overcome these hurdles and demonstrate on-chip electro-optically tunable Brillouin microlasers in compact lithium niobate on insulator (LNOI) microdisks with diameters of 31.5 um and 117.0 um by using cross-polarized SBS arrangement. A quasi-continuum band of bound shear mechanical modes inside the suspended microdisk are revealed for the first time, allowing feasible phase matching of stimulated Brillouin lasing (SBL). We achieve efficient cross-polarized optomechanical coupling and SBL via the significant photoelastic tensors of lithium niobate (e.g., p41=-1.51). This approach yields a 118 Hz intrinsic linewidth and a comparatively low threshold power of 3.15 mW. A real-time electro-optic tuning of the cross-polarized Brillouin scheme with a tuning efficiency of ~93.1 kHz/V is also achieved, further showcasing potential of LNOI platform for next-generation tunable photonic systems.

physics.optics

Energy dependent Chemical Interface Damping induced by 1-Decanethiol Self-Assembled Monolayer on Au(111)

The chemical interface damping (CID) effect increases the collision frequency of free electrons in metals by changes of the metal surface. We have now experimentally disentangled the two contributions to CID: induced roughness and direct charge transfer. The latter is an important area of research in photoelectrochemistry with potential applications in light-induced chemical reactions. We present a broadband investigation of the CID effect on Au(111) covered by a self-assembled monolayer of decanethiol. Spectroscopic ellipsometry measurements show a photon energy dependent increase of collision frequency. We observe a constant, photon energy independent contribution, which is attributed to induced roughness and a contribution that linearly increases with photon energy from about 1 eV upwards which we attribute to direct charge transfer. The onset of the charge transfer mechanism corresponds to occupied orbitals of thiols bound to the Au surface, as confirmed by density functional theory calculations.

cond-mat.mtrl-sci

Crystallization of the transdimensional electron liquid

Wigner crystallization of free electrons at room temperature is explored for a new class of metallic ultrathin (transdimensional) materials whose properties can be controlled by their thickness. Our calculations of the critical electron density, temperature and the melting curve show that by reducing the material thickness one can Wigner-crystallize free electrons at room temperature to get them pinned onto a two-dimensional triangular lattice of a supersolid inside of the crystalline material. Such a solid melts and freezes reversibly with increase and decrease of electron doping or temperature, whereby its resistivity behaves opposite to the free electron gas model predictions.

cond-mat.str-el

Roadmap on Nonlocality in Photonic Materials and Metamaterials

Photonic technologies continue to drive the quest for new optical materials with unprecedented responses. A major frontier in this field is the exploration of nonlocal (spatially dispersive) materials, going beyond the local, wavevector-independent assumption traditionally made in optical material modeling. On one end, the growing interest in plasmonic, polaritonic and quantum materials has revealed naturally occurring nonlocalities, emphasizing the need for more accurate models to predict and design their optical responses. This has major implications also for topological, nonreciprocal, and time-varying systems based on these material platforms. Beyond natural materials, artificially structured materials--metamaterials and metasurfaces--can provide even stronger and engineered nonlocal effects, emerging from long-range interactions or multipolar effects. This is a rapidly expanding area in the field of photonic metamaterials, with open frontiers yet to be explored. In the case of metasurfaces, in particular, nonlocality engineering has become a powerful tool for designing strongly wavevector-dependent responses, enabling enhanced wavefront control, spatial compression, multifunctional devices, and wave-based computing. Furthermore, nonlocality and related concepts play a critical role in defining the ultimate limits of what is possible in optics, photonics, and wave physics. This Roadmap aims to survey the most exciting developments in nonlocal photonic materials, highlight new opportunities and open challenges, and chart new pathways that will drive this emerging field forward--toward new scientific discoveries and technological advancements.

cond-mat.mes-hall

Optical sensing of charge and spin current fluctuations in centrosymmetric semiconductors

We propose a time-resolved optical measurement scheme for sampling transient charge and spin currents in a bulk centrosymmetric semiconductor. The technique relies on emission of second harmonic light triggered by a pulsed below-gap optical excitation and a spontaneous intraband polarization arising from spin or charge motion, mediated by a $χ^(3)$-based nonlinear optical process. Our proposal uses homodyne amplification to boost the weak second harmonic signal, making it detectable with conventional electronics, calculated for charge current in a room temperature GaAs semiconductor. This all-optical technique requires neither electrical contact nor bias fields and the signal is estimated at a few percent relative to the shot noise of the probe. This proposal motivates a novel method for exploring thermal and quantum fluctuations in the solid state in a non-invasive manner.

cond-mat.mes-hall

Schottky photodetectors with transparent conductive oxides for photonic integrated circuits

Silicon photonics has many attractive features but faces a major issue: inefficient and slow photodetection in the telecom range. New metal-semiconductor Schottky photodetectors based on intraband absorption address this problem, but their efficiency remains low. We suggest that by creating a junction between silicon and a transparent oxide with appropriate doping, which results in a real permittivity close to zero (known as the epsilon near zero or ENZ regime), detection efficiency could increase by more than tenfold. Using Aluminum Zinc Oxide (AZO) as an example, we design an optimized AZO/Si slot photonic waveguide detector that could potentially reach an efficiency of several tens of percent, in contrast to a few percent for a metal/Si Schottky detector. This increase is primarily due to the lower density of states in AZO compared to metal, along with superior coupling efficiency and strong absorption within a 10 nm slot.

physics.optics

Transparent conductive oxides and low loss nitride-rich silicon waveguides as building blocks for neuromorphic photonics

Fully CMOS-compatible photonic memory holding devices hold a potential in a development of ultrafast artificial neural networks. Leveraging the benefits of photonics such as high-bandwidth, low latencies, low-energy interconnect and high speed they can overcome the existing limits of the electronic processing. To satisfy all these requirements a new photonic platform is proposed that combines low-loss nitride-rich silicon as a guide and low-loss transparent conductive oxides as an active material that can provide high nonlinearity and bistability under both electrical and optical signals.

physics.optics

Transparent conductive oxides as a material platform for photonic neural networks

Photonics integrated circuits have a huge potential to serve as a framework for a new class of information processing machines and can enable ultrafast artificial neural networks. They can overcome the existing speed and power limits of the electronic processing elements and provide additional benefits of photonics such as high-bandwidth, sub-nanosecond latencies and low-energy interconnect credentials leading to a new paradigm called neuromorphic photonics. The main obstacle to realize such a task is a lack of proper material platform that imposes serious requirements on the architecture of the network. Here we suggest and justify that transparent conductive oxides can be an excellent candidate for such a task as they provide a nonlinearity and bistability under both optical and electrical inputs.

physics.optics

$\hbar ω$ versus $\hbar \boldsymbol{k}$: Dispersion and Energy Constraints on Time-Varying Photonic Materials and Time Crystals

Photonic time-varying systems have attracted significant attention owing to their rich physics and potential opportunities for new and enhanced functionalities. In this context, the duality of space and time in wave physics has been particularly fruitful to uncover interesting physical effects in the temporal domain, such as reflection/refraction at temporal interfaces and momentum-bandgaps in time crystals. However, the characteristics of the temporal/frequency dimension, particularly its relation to causality and energy conservation ($\hbar ω$ is energy, whereas $\hbar \boldsymbol{k}$ is momentum), create challenges and constraints that are unique to time-varying systems and are not present in their spatially varying counterparts. Here, we overview two key physical aspects of time-varying photonics that have only received marginal attention so far, namely temporal dispersion and external power requirements, and explore their implications. We discuss how temporal dispersion, an inherent property of any causal material, makes the fields evolve continuously at sharp temporal interfaces and may limit the strength of fast temporal modulations and of various resulting effects. Furthermore, we show that changing the refractive index in time always involves large amounts of energy. We derive power requirements to observe a time-crystal response in one of the most popular material platforms in time-varying photonics, i.e., transparent conducting oxides, and we argue that these effects are almost always obscured by less exotic nonlinear phenomena. These observations and findings shed light on the physics and constraints of time-varying photonics, and may guide the design and implementation of future time-modulated photonic systems.

physics.optics

Atomic-Void van der Waals Channel Waveguides

Layered van der Waals materials offer a unique platform for creating atomic-void channels with sub-nanometer dimensions. Coupling light into these channels may further advance sensing, quantum information, and single molecule chemistries. Here we examine limits of light guiding in atomic-void channels and show that van der Waals materials exhibiting strong resonances - excitonic and polaritonic - are ideally suited for deeply subwavelength light guiding. We demonstrate that excitonic transition metal dichalcogenides can squeeze > 70% of optical power in just < λ/100 thick channel in the visible and near-infrared. We also show that polariton resonances of hexagonal boron nitride allow deeply subwavelength (< λ/500) guiding in the mid-infrared. We further reveal effects of natural material anisotropy and discuss the influence of losses. Our analysis shows van der Waals channel waveguides while offering extreme optical confinement exhibit significantly lower loss compared to plasmonic counterparts. Such atomic void waveguides pave the way to low loss and deeply subwavelength optics.

physics.optics

High-Performance All-Optical Modulator Based on Graphene-hBN Heterostructures

Graphene has emerged as an ultrafast photonic material for on-chip all-optical modulation. However, its atomic thickness limits its interaction with guided optical modes, which results in a high switching energy per bit or low modulation efficiencies. Nonetheless, it is possible to enhance the interaction of guided light with graphene by nanophotonic means. Herein, we present a practical design of an all-optical modulator that is based on graphene and hexagonal boron nitride (hBN) heterostructures that are hybrid integrated into silicon slot waveguides. Using this device, a high extinction ratio (ER) of 7.3 dB, an ultralow insertion loss (IL) of <0.6 dB, and energy-efficient switching (<0.33 pJ/bit) are attainable for a 20μm long modulator with double layer graphene. In addition, the device performs ultrafast switching with a recovery time of <600 fs, and could potentially be employed as a high-performance all-optical modulator with an ultra-high bandwidth in the hundreds of GHz. Moreover, the modulation efficiency of the device is further enhanced by stacking additional layers of graphene-hBN heterostructures, while theoretically maintaining an ultrafast response. The proposed device exhibits highly promising performance metrics, which are expected to serve the needs of next-generation photonic computing systems.

physics.optics

100 GHz Micrometer compact broadband Monolithic ITO Mach Zehnder Interferometer Modulator enabling 3500 times higher Packing Density

Electro-optic modulators provide a key function in optical transceivers and increasingly in photonic programmable Application Specific Integrated Circuits (ASICs) for machine learning and signal processing. However, both foundry ready silicon based modulators and conventional material based devices utilizing Lithium niobate fall short in simultaneously providing high chip packaging density and fast speed. Current driven ITO based modulators have the potential to achieve both enabled by efficient light matter interactions. Here, we introduce micrometer compact Mach Zehnder Interferometer (MZI) based modulators capable of exceeding 100 GHz switching rates. Integrating ITO thin films atop a photonic waveguide, spectrally broadband, and compact MZI phase shifter. Remarkably, this allows integrating more than 3500 of these modulators within the same chip area as only one single silicon MZI modulator. The modulator design introduced here features a holistic photonic, electronic, and RF-based optimization and includes an asymmetric MZI tuning step to optimize the Extinction Ratio (ER) to Insertion Loss (IL) and dielectric thickness sweep to balance the tradeoffs between ER and speed. Driven by CMOS compatible bias voltage levels, this device is the first to address next generation modulator demands for processors of the machine intelligence revolution, in addition to the edge and cloud computing demands as well as optical transceivers alike.

physics.optics

Landau damping in hybrid plasmonics

Landau Damping (LD) mechanism of the Localized Surface Plasmon (LSP) decay is studied for the hybrid nanoplasmonic (metal core/dielectric shell) structures. It is shown that LD in hybrid structures is strongly affected by permittivity and electron effective mass in the dielectric shell in accordance with previous observations by Kreibig, and the strength of LD can be enhanced by an order of magnitude for some combinations of permittivity and effective mass. The physical reason for this effect is identified as electron spillover into the dielectric where electric field is higher than in the metal and the presence of quasi-discrete energy levels in the dielectric. The theory indicates that the transition absorption at the interface metal-dielectric is a dominant contribution to LD in such hybrid structures. Thus, by judicious selection of dielectric material and its thickness one can engineer decay rates and hot carrier production for important applications, such as photodetection and photochemistry.

physics.optics

An ITO Graphene hybrid integrated absorption modulator on Si-photonics for neuromorphic nonlinear activation

The high demand for machine intelligence of doubling every three months is driving novel hardware solutions beyond charging of electrical wires given a resurrection to application specific integrated circuit (ASIC)-based accelerators. These innovations include photonic ASICs (P-ASIC) due to prospects of performing optical linear (and also nonlinear) operations, such as multiply-accumulate for vector matrix multiplications or convolutions, without iterative architectures. Such photonic linear algebra enables picosecond delay when photonic integrated circuits are utilized, via on-the-fly mathematics. However, the neurons full function includes providing a nonlinear activation function, knowns as thresholding, to enable decision making on inferred data. Many P-ASIC solutions performing this nonlinearity in the electronic domain, which brings challenges in terms of data throughput and delay, thus breaking the optical link and introducing increased system complexity via domain crossings. This work follows the notion of utilizing enhanced light-matter-interactions to provide efficient, compact, and engineerable electro-optic neuron nonlinearity. Here, we introduce and demonstrate a novel electro-optic device to engineer the shape of this optical nonlinearity to resemble a rectifying linear unit (ReLU) - the most-commonly used nonlinear activation function in neural networks. We combine the counter-directional transfer functions from heterostructures made out of two electro-optic materials to design a diode-like nonlinear response of the device. Integrating this nonlinearity into a photonic neural network, we show how the electrostatics of this thresholders gating junction improves machine learning inference accuracy and the energy efficiency of the neural network.

physics.app-ph

Heterogeneously Integrated ITO Plasmonic Mach-Zehnder Interferometric Modulator on SOI

Densely integrated active photonics is key for next generation on-chip networks for addressing both footprint and energy budget concerns. However, the weak light-matter interaction in traditional active Silicon optoelectronics mandates rather sizable device lengths. The ideal active material choice should avail high index modulation while being easily integrated into Silicon photonics platforms. Indium tin oxide (ITO) offers such functionalities and has shown promising modulation capacity recently. Interestingly, the nanometer-thin unity-strong index modulation of ITO synergistically combines the high group-index in hybrid plasmonic with nanoscale optical modes. Following this design paradigm, here, we demonstrate a spectrally broadband, GHz-fast Mach-Zehnder interferometric modulator, exhibiting a high efficiency signified by a miniscule VpL of 95 Vum, deploying an one-micrometer compact electrostatically tunable plasmonic phase-shifter, based on heterogeneously integrated ITO thin films into silicon photonics. Furthermore we show, that this device paradigm enables spectrally broadband operation across the entire telecommunication near infrared C-band. Such sub-wavelength short efficient and fast modulators monolithically integrated into Silicon platform open up new possibilities for high-density photonic circuitry, which is critical for high interconnect density of photonic neural networks or applications in GHz-fast optical phased-arrays, for example.

physics.app-ph