arXiv subjects

Jacob B. Khurgin

Publications and source records attributed to Jacob B. Khurgin.

At least 37 records · Page 2Linked to original sources

arXiv2020

Comparative Analysis of Room Temperature Plasmonic Graphene Hot Electron Bolometric Photodetectors

We appraise a waveguide-integrated plasmonic graphene photodetector based on the hot carrier photo-bolometric effect, with performance characterized simultaneously by high responsivity, on the scale of hundreds of AW-1, and high speed on the scale of 100s of GHz. Performance evaluation is based on a theory of bolometric effect originating from the band nonparabolicity of graphene. Results compare favorably with the state-of-the-art plasmonic bolometric photodetectors, predicting up to two orders of magnitude increase in a responsivity while keeping speed on the same level, defined by the electron-lattice scattering time in graphene.

physics.app-ph↗

arXiv2020

Low Dimensional Material based Electro-Optic Phase Modulation Performance Analysis

Electro-optic modulators are utilized ubiquitously ranging from applications in data communication to photonic neural networks. While tremendous progress has been made over the years, efficient phase-shifting modulators are challenged with fundamental tradeoffs, such as voltage-length, index change-losses or energy-bandwidth, and no single solution available checks all boxes. While voltage-driven phase modulators, such as based on lithium niobate, offer low loss and high speed operation, their footprint of 10's of cm-scale is prohibitively large, especially for density-critical applications, for example in photonic neural networks. Ignoring modulators for quantum applications, where loss is critical, here we distinguish between current versus voltage-driven modulators. We focus on the former, since current-based schemes of emerging thin electro-optical materials have shown unity-strong index modulation suitable for heterogeneous integration into foundry waveguides. Here, we provide an in-depth ab-initio analysis of obtainable modulator performance based on heterogeneously integrating low-dimensional materials, i.e. graphene, thin films of indium tin oxide, and transition metal dichalcogenide monolayers into a plurality of optical waveguide designs atop silicon photonics. Using the fundamental modulator tradeoff of energy-bandwidth-product as a design-quality quantifier, we show that a small modal cross section, such as given by plasmonic modes, enables high-performance operation, physically realized by arguments on charge-distribution and low electrical resistance. An in-depth design understanding of phase-modulator performance, beyond doped-junctions in silicon, offers opportunities for micrometer-compact yet energy-bandwidth-ratio constrained modulators with timely opportunities to hardware-accelerate applications beyond data communication towards photonic machine intelligence.

physics.app-ph↗

arXiv2020

Fast and slow nonlinearities in ENZ materials

Novel materials, with enhanced light-matter interaction capabilities, play an essential role in achieving the lofty goals of nonlinear optics. Recently, Epsilon-Near-Zero (ENZ) media have emerged as a promising candidate to enable the enhancement of several nonlinear processes including refractive index modulation and harmonic generation. Here, we analyze the optical nonlinearity of ENZ media to clarify the commonalities with other nonlinear media and its unique properties. We focus on transparent conducting oxides (TCOs) as the family of ENZ media with near zero permittivity in the near-infrared (telecom) band. We investigate the instantaneous and delayed nonlinearities. By identifying their common origin from the band nonparabolicity, we show that their relative strength is entirely determined by a ratio of the energy and momentum relaxation (or dephasing) times. Using this framework, we compare ENZ materials against the many promising nonlinear media that have been investigated in literature and show that while ENZ materials do not radically outpace the strength of traditional materials in either the fast or slow nonlinearity, they pack key advantages such as an ideal response time, intrinsic slow light enhancement, and broadband nature in a compact platform making them a valuable tool for ultrafast photonics applications for decades to come.

physics.optics↗

arXiv2020

Absorptive loss and band non-parabolicity as a physical origin of large nonlinearity in epsilon-near-zero materials

For decades, nonlinear optics has been used to control the frequency and propagation of light in unique ways enabling a wide range of applications such as ultrafast lasing, sub-wavelength imaging, and novel sensing methods. Through this, a key thread of research in the field has always been the development of new and improved nonlinear materials to empower these applications. Recently, epsilon-near-zero (ENZ) materials have emerged as a potential platform to enhanced nonlinear interactions, bolstered in large part due to the extreme refractive index tuning (Δn~ 0.1 - 1) of sub-micron thick films that has been demonstrated in literature. Despite this experimental success, the theory has lagged and is needed to guide future experimental efforts. Here, we construct a theoretical framework for the intensity-dependent refractive index of the most popular ENZ materials, heavily doped semiconductors. We demonstrate that the nonlinearity when excited below bandgap, is due to the modification of the effective mass of the electron sea which produces a shift in the plasma frequency. We discuss trends and trade-offs in the optimization of excitation conditions and material choice (such material loss, band structure, and index dispersion), and provide a figure of merit through which the performance of future materials may be evaluated. By illuminating the framework of the nonlinearity, we hope to propel future applications in this growing field.

physics.optics↗

arXiv2020

On-chip ultrafast plasmonic graphene hot electron bolometric photodetector

We investigate waveguide-integrated plasmonic graphene photodetector operating based on the hot carrier photo-bolometric effect, which is characterized simultaneously by high responsivity on the scale of hundreds of AW-1 and high speed on the scale of 100s of GHz. We develop a theory of bolometric effect originating from the band nonparabolicity of graphene and estimate responsivity due to bolometric effect is shown to significantly surpass the responsivity of co-existing photo-conductive effect thus convincingly demonstrating the dominance of bolometric effect. Based on the theory we propose a novel detector configuration based on hybrid waveguide that allows for efficient absorption in the graphene over short distance and subsequently a large change of conductivity. The results demonstrate the potential of graphene for high-speed communication systems.

physics.app-ph↗

arXiv2019

A Guide for Material and Design Choices for Electro-Optic Modulators and recent 2D-Material Silicon Modulator Demonstrations

Electro-optic modulation performs a technological relevant functionality such as for communication, beam steering, or neuromorphic computing through providing the nonlinear activation function of a perceptron. Wile Silicon photonics enabled the integration and hence miniaturization of optoelectronic devices, the weak electro-optic performance of Silicon renders these modulators to be bulky and power-hungry compared to a single switch functionality known from electronics. To gain deeper insights into the physics and operation of modulators hetero-generous integration of emerging electro-optically active materials could enable separating light passive and low-loss light routing from active light manipulation. Here we discuss and review our recent work on a) fundamental performance vectors of electro-optic modulators, and b) showcase recent development of heterogeneous-integrated emerging EO materials into Si-photonics to include an ITO-based MZM, a Graphene hybrid-plasmon and the first TMD-MRR modulator using a microring resonator. Our results indicate a viable path for energy efficient and compact Silicon photonic based modulators.

physics.app-ph↗

arXiv2018

Self-organized nonlinear gratings for ultrafast nanophotonics

Modern nonlinear optical materials allow light of one wavelength be efficiently converted into light at another wavelength. However, designing nonlinear optical materials to operate with ultrashort pulses is difficult, because it is necessary to match both the phase velocities and group velocities of the light. Here we show that self-organized nonlinear gratings can be formed with femtosecond pulses propagating through nanophotonic waveguides, providing simultaneous group-velocity matching and quasi-phase-matching for second harmonic generation. We record the first direct microscopy images of photo-induced nonlinear gratings, and demonstrate how these waveguides enable simultaneous $χ^{(2)}$ and $χ^{(3)}$ nonlinear processes, which we utilize to stabilize a laser frequency comb. Finally, we derive the equations that govern self-organized grating formation for femtosecond pulses and explain the crucial role of group-velocity matching. In the future, such nanophotonic waveguides could enable scalable, reconfigurable nonlinear optical systems.

physics.optics↗

arXiv2018

Biased Nanoscale Contact as Active Element for Electrically Driven Plasmonic Nanoantenna

Electrically-driven optical antennas can serve as compact sources of electromagnetic radiation operating at optical frequencies. In the most widely explored configurations, the radiation is generated by electrons tunneling between metallic parts of the structure when a bias voltage is applied across the tunneling gap. Rather than relying on an inherently inefficient inelastic light emission in the gap, we suggest to use a ballistic nanoconstriction as the feed element of an optical antenna supporting plasmonic modes. We discuss the underlying mechanisms responsible for the optical emission, and show that with such a nanoscale contact, one can reach quantum efficiency orders of magnitude larger than with standard light-emitting tunneling structures.

cond-mat.mes-hall↗

arXiv2018

Attojoule-Efficient Graphene Optical Modulators

Electro-optic modulation is a technology-relevant function for signal keying, beam steering, or neuromorphic computing through providing the nonlinear activation function of a perceptron. With silicon-based modulators being bulky and inefficient, we here discuss graphene-based devices heterogeneously integrated. This study provides a critical and encompassing discussing of the physics and performance of graphene modulators rather than collecting relevant published work. We provide a holistic analysis of the underlying physics of modulators including the graphenes index tunability, the underlying optical mode, and discuss resulting performance vectors of this novel class of hybrid modulators. Our results show that the reducing the modal area, and reducing the effective broadening of the active material are key to improving device performance defined by the ratio of energy-bandwidth and footprint. We further show how the waveguides polarization must be in-plane with graphene such as given by plasmonic-slot structures. A high device performance can be obtained by introducing multi- or bi-layer graphene modulator designs. Lastly, we present recent results of a graphene-based hybrid-photon-plasmon modulator on a silicon platform, requiring near Boltzmann approximation (100mV) low drive voltages. Being physically compact this 100 aJ/bit modulator opens the path towards a new class of attojoule opto-electronics.

physics.app-ph↗

arXiv2017

Waveguide based Electroabsorption Modulator Performance

Electro-optic modulation is a key function for data communication. Given the vast amount of data handled, understanding the intricate physics and trade-offs of modulators on-chip allows revealing performance regimes not explored yet. Here we show a holistic performance analysis for waveguide-based electro-absorption modulators. Our approach centers around material properties revealing obtainable optical absorption leading to effective modal cross-section, and material broadening effects. Taken together both describe the modulator physical behavior entirely. We consider a plurality of material modulation classes to include two-level absorbers such as quantum dots, free carrier accumulation or depletion such as ITO or Silicon, two-dimensional electron gas in semiconductors such as quantum wells, Pauli blocking in Graphene, and excitons in two-dimensional atomic layered materials such as found in transition metal dichalcogendies. Our results show that reducing the modal area generally improves modulator performance defined by the amount of induced electrical charge, and hence the energy-per-bit function, required switching the signal. We find that broadening increases the amount of switching charge needed. While some material classes allow for reduced broadening such as quantum dots and 2-dimensional materials due to their reduced Coulomb screening leading to increased oscillator strengths, the sharpness of broadening is overshadowed by thermal effects independent of the material class. Further we find that plasmonics allows the switching charge and energy-per-bit function to be reduced by about one order of magnitude compared to bulk photonics. This analysis is aimed as a guide for the community to predict anticipated modulator performance based on both existing and emerging materials.

physics.app-ph↗

arXiv2017

Excitonic emission of monolayer semiconductors near-field coupled to high-Q microresonators

We present quantum yield measurements of single layer $\textrm{WSe}_2$ (1L-$\textrm{WSe}_2$) integrated with high-Q ($Q>10^6$) optical microdisk cavities, using an efficient ($η>$90%) near-field coupling scheme based on a tapered optical fiber. Coupling of the excitonic emission is achieved by placing 1L-WSe$_2$ to the evanescent cavity field. This preserves the microresonator high intrinsic quality factor ($Q>10^6$) below the bandgap of 1L-WSe$_2$. The nonlinear excitation power dependence of the cavity quantum yield is in agreement with an exciton-exciton annihilation model. The cavity quantum yield is $\textrm{QY}_\textrm{c}\sim10^{-3}$, consistent with operation in the \textit{broad emitter} regime (i.e. the emission lifetime of 1L-WSe$_2$ is significantly shorter than the bare cavity decay time). This scheme can serve as a precise measurement tool for the excitonic emission of layered materials into cavity modes, for both in plane and out of plane excitation.

cond-mat.mes-hall↗

arXiv2017

Roadmap on Atto-Joule per Bit Modulators

Electrooptic modulation performs the conversion between the electrical and optical domain with applications in data communication for optical interconnects, but also for novel optical compute algorithms such as providing nonlinearity at the output stage of optical perceptrons in neuromorphic analogue optical computing. Since the clock frequency for photonics on chip has a power overhead sweet slot around 10s of GHz, ultrafast modulation may only be required in long distance communication, but not for short onchip links. Here we show a roadmap towards atto Joule per bit efficient modulators on chip as well as some experimental demonstrations of novel plasmon modulators with sub 1fJ per bit efficiencies. We then discuss the first experimental demonstration of a photon plasmon-hybrid Graphene-based electroabsorption modulator on silicon. The device shows a sub 1V steep switching enabled by near ideal electrostatics delivering a high 0.05dB per V um performance requiring only 110 aJ per bit. Improving on this design, we discuss a plasmonic slot based Graphene modulator design, where the polarization of the plasmonic mode matches with Graphenes inplane dimension. Here a push pull dual gating scheme enables 2dB per V um efficient modulation allowing the device to be just 770 nm short for 3dB small signal modulation. This in turn allows for a device-enabled two orders of magnitude improvement of electrical optical co integrated network on chips over electronic only architectures. The latter opens technological opportunities in in cognitive computing, dynamic data-driven applications system, and optical analogue compute engines to include neuromorphic photonic computing.

physics.app-ph↗

arXiv2017

Fundamental limitations in spontaneous emission rate of single-photon sources

Rate of single-photon generation by quantum emitters (QEs) can be enhanced by placing a QE inside a resonant structure. This structure can represent an all-dielectric micro-resonator or waveguide and thus be characterized by ultra-low loss and dimensions on the order of wavelength. Or it can be a metal nanostructure supporting localized or propagating surface plasmon-polariton modes that are of subwavelength dimensions, but suffer from strong absorption. In this work, we develop a physically transparent analytical model of single-photon emission in resonant structures and show unambiguously that, notwithstanding the inherently high loss, the external emission rate can be enhanced with plasmonic nanostructures by two orders of magnitude compared to all-dielectric structures. Our analysis provides guidelines for developments of new plasmonic configurations and materials to be exploited in quantum plasmonics.

cond-mat.mes-hall↗

arXiv2016

Active Material, Optical Mode and Cavity Impact on electro-optic Modulation Performance

In this paper, three different materials Si, ITO and graphene; and three different types of mode structures bulk, slot and hybrid; based on their electrooptical and electro absorptive aspects in performance are analyzed. The study focuses on three major characteristics of electrooptic tuning, i.e. material, modal and cavity dependency. The materials are characterized with established models and the allowed ranges for their key parameter spectra are analyzed with desired tuning in mind; categorizing into n and k dominant regions for plausible electrooptic and electro absorptive applications, respectively. A semi analytic approach, with the aid of FEM simulations for the eigenmode calculations, was used for this work. Electrooptic tuning i.e. resonance shift properties inside Fabry Perot cavities are investigated with modal and scaling concerns in mind. Tuning changes the effective complex refractive index of the mode dictated by the Kramers Kronig relations which subsequently suggest a tradeoff between the resonance shift and increasing losses. The electrical tuning properties of the different modes in the cavity are analyzed, and subsequently a figure of merit, delta-lambda/delta-alpha was chosen with respect to carrier concentration and cavity scaling to find prospective suitable regions for desired tuning effects.

cond-mat.mes-hall↗

arXiv2016

Hyperbolic Metamaterials and Coupled Surface Plasmon Polaritons: comparative analysis

We investigate the optical properties of sub-wavelength layered metal/dielectric structures, also known as hyperbolic metamaterials (HMMs), using exact analytical Kronig Penney (KP) model. We show that hyperbolic isofrequency surfaces exist for all combinations of layer permittivities and thicknesses, and the largest Purcell enhancements (PE) of spontaneous radiation are achieved away from the nominally hyperbolic region. Detailed comparison of field distributions, dispersion curves, and Purcell factors (PF) between the HMMs and Surface Plasmon Polaritons (SPPs) guided modes in metal/dielectric waveguides demonstrates that HMMs are nothing but weakly coupled gap or slab SPPs modes. Broadband PE is not specific to the HMMs and can be easily attained in single thin metallic layers. Furthermore, large wavevectors and PE are always combined with high loss, short propagation distances and large impedances; hence PE in HMMs is essentially a direct coupling of the energy into the free electron motion in the metal, or quenching of radiative lifetime. PE in HMMs is not related to the hyperbolicity per se but is simply the consequence of the strong dispersion of permittivity in the metals or polar dielectrics, as our conclusions are relevant also for the infrared HMMs occurring in nature. When it comes to enhancement of radiating processes and field concentrations, HMMs are not superior to far simpler plasmonic structures.

physics.optics↗

arXiv2016

Excitation of plasmonic nanoantennas with nonresonant and resonant electron tunnelling

A rigorous theory of photon emission accompanied inelastic tunnelling inside the gap of plasmonic nanoantennas has been developed. The disappointingly low efficiency of the electrical excitation of surface plasmon polaritons in these structures can be increased by orders of magnitude when a resonant tunnelling structure is incorporated inside the gap. Resonant tunnelling assisted surface plasmon emitter may become a key element in future electrically-driven nanoplasmonic circuits.

physics.optics↗

arXiv2016

Phonon lasing as a likely mechanism for density-dependent velocity saturation in GaN transistors

We show that density-dependent velocity saturation in a GaN High Electron Mobility Transistor (HEMT) can be related to the stimulated emission of longitudinal optical (LO) phonons. As the drift velocity of electrons increases, the drift of the Fermi distribution in reciprocal space produces population inversion and gain for the LO phonons. Once this gain reaches a threshold value, the avalanche-like increase of LO emission causes a rapid loss of electron energy and momentum and leads to drift velocity saturation. Our simple model correctly predicts both the general trend of the saturation velocity decreasing with increasing electron density and the values of saturation velocity measured in our experiments.

cond-mat.mes-hall↗

arXiv2015

Enhancement of Two-photon Absorption in Quantum Wells for Extremely Nondegenerate Photon Pairs

We recently demonstrated orders of magnitude enhancement of two-photon absorption (2PA) in direct gap semiconductors due to intermediate state resonance enhancement for photons of very different energies. It can be expected that further enhancement of nondegenerate 2PA will be observed in quantum wells (QWs) since the intraband matrix elements do not vanish near the band center as they do in the bulk, and the density of states in QWs is larger near the band edge. Here we present a perturbation-theory based theoretical description of nondegenerate 2PA in semiconductor QWs, where both frequency and polarization of two incident waves can vary independently. Analytical expressions for all possible permutations of frequencies and polarizations have been obtained, and the results are compared with degenerate 2PA in quantum wells along with degenerate and nondegenerate 2PA in bulk semiconductors. We show that using QWs in place of bulk semiconductors with both beams in the TM-polarized mode leads to an additional order of magnitude increase in the nondegenerate 2PA. Explicit calculations for GaAs QWs are presented.

physics.optics↗