arXiv subjects

Jairo Sinova

Publications and source records attributed to Jairo Sinova.

At least 199 records · Page 11Linked to original sources

arXiv2004

Magneto-transport and magneto-optical properties of ferromagnetic (III,Mn)V semicondcutors: a review

Rapid developments in material research of metallic ferromagnetic (III,Mn)V semiconductors over the past few years have brought a much better understanding of these complex materials. We review here some of the main developments and current understanding of the bulk properties of these systems within the metallic regime, focusing principally on the magneto-transport and magneto-optical properties. Although several theoretical approaches are reviewed, the bulk of the review uses the effective Hamiltonian approach, which has proven useful in describing many of these properties namely in (Ga,Mn)As and (In,Mn)As. The model assumes a ferromagnetic coupling between Mn d-shell local moments mediated by holes in the semiconductor valence band.

cond-mat.mtrl-sci↗

arXiv2004

Universal Intrinsic Spin-Hall Effect

We describe a new effect in semiconductor spintronics that leads to dissipationless spin-currents in paramagnetic spin-orbit coupled systems. We argue that in a high mobility two-dimensional electron system with substantial Rashba spin-orbit coupling, a spin-current that flows perpendicular to the charge current is intrinsic. In the usual case where both spin-orbit split bands are occupied, the spin-Hall conductivity has a universal value.

cond-mat.mes-hall↗

arXiv2003

Magnetization relaxation in (Ga,Mn)As ferromagnetic semiconductors

We describe a theory of Mn local-moment magnetization relaxation due to p-d kinetic-exchange coupling with the itinerant-spin subsystem in the ferromagnetic semiconductor (Ga,Mn)As alloy. The theoretical Gilbert damping coefficient implied by this mechanism is calculated as a function of Mn moment density, hole concentration, and quasiparticle lifetime. Comparison with experimental ferromagnetic resonance data suggests that in annealed strongly metallic samples, p-d coupling contributes significantly to the damping rate of the magnetization precession at low temperatures. By combining the theoretical Gilbert coefficient with the values of the magnetic anisotropy energy, we estimate that the typical critical current for spin-transfer magnetization switching in all-semiconductor trilayer devices can be as low as $\sim 10^{5} {\rm A cm}^{-2}$.

cond-mat.mes-hall↗

arXiv2003

Spin-Hall and spin-diagonal conductivity in the presence of Rashba and Dresselhaus spin-orbit coupling

We investigate the spin-current linear response conductivity tensor to an electric field in a paramagnetic two dimensonal electron gas with both Rashba and Dresselhaus spin-orbit coupling in the weak scattering regime. In the ususal case where both spin-orbit-split bands are occupied, we find that the spin-Hall conductivity depends only on the sign of the difference in magnitude of the Rashba and Dresselhaus coupling strengths except within a narrow window where both coupling strengths are equal. We also find a new effect in which a spin current is generated in the direction of the driving field whenever the Dresselhaus spin-orbit coupling is nonzero. We discuss experimental implications of this finding taking into account the finite mobility and typical parameters of current samples and possible experimental set ups for its detection.

cond-mat.mes-hall↗

arXiv2003

First Principles Calculation of Anomalous Hall Conductivity in Ferromagnetic bcc Fe

We perform a first principles calculation of the anomalous Hall effect in ferromagnetic bcc Fe. Our theory identifies an intrinsic contribution to the anomalous Hall conductivity and relates it to the k-space Berry phase of occupied Bloch states. The theory is able to account for both dc and magneto-optical Hall conductivities with no adjustable parameters.

cond-mat.mes-hall↗

arXiv2003

Ferromagnetic transition temperature enhancement in (Ga,Mn)As semiconductor by carbon co-doping

We present a theoretical study of (Ga,Mn)(As,C) diluted magnetic semiconductors with high C acceptor density that combines insights from phenomenological model and microscopic approaches. A tight-binding coherent potential approximation is used to describe the electronic structure in the presence of Mn$_{\rm Ga}$ and C$_{\rm As}$ impurities. We find only a small effect of C on the distribution and coherence of electronic states close to the top of the valence band and on the coupling between Mn moments, even at doping levels of several per cent. These results justify applying the model of ferromagnetic Mn-Mn coupling mediated by itinerant holes in the valence band also to C doped samples. The increase of ferromagnetic transition temperature due to the presence of C acceptors is illustrated by calculations that use the k.p Kohn-Luttinger description of the GaAs valence band and assume systems where Mn local moment and itinerant hole densities can be varied independently.

cond-mat.mtrl-sci↗

arXiv2003

Measuring the condensate fraction of rapidly rotating trapped boson systems: off-diagonal order from the density

We demonstrate a direct connection between the density profile of a system of ultra-cold trapped bosonic particles in the rapid-rotation limit and its condensate fraction. This connection can be used to probe the crossover from condensed vortex-lattice states to uncondensed quantum fluid states that occurs in rapidly rotating boson systems as the particle density decreases or the rotation frequency increases. We illustrate our proposal with a series of examples, including ones based on models of realistic finite trap systems, and comment on its application to freely expanding boson density profile measurements.

cond-mat.soft↗

arXiv2003

DC-transport properties of ferromagnetic (Ga,Mn)As semiconductors

We study the dc transport properties of (Ga,Mn)As diluted magnetic semiconductors with Mn concentration varying from 1.5% to 8%. Both diagonal and Hall components of the conductivity tensor are strongly sensitive to the magnetic state of these semiconductors. Transport data obtained at low temperatures are discussed theoretically within a model of band-hole quasiparticles with a finite spectral width due to elastic scattering from Mn and compensating defects. The theoretical results are in good agreement with measured anomalous Hall effect and anisotropic longitudinal magnetoresistance data. This quantitative understanding of dc magneto-transport effects in (Ga,Mn)As is unparalleled in itinerant ferromagnetic systems.

cond-mat.mtrl-sci↗

arXiv2003

Infrared magneto-optical properties of (III,Mn)V ferromagetic semiconductors

We present a theoretical study of the infrared magneto-optical properties of ferromagnetic (III,Mn)V semiconductors. Our analysis combines the kinetic exchange model for (III,Mn)V ferromagnetism with Kubo linear response theory and Born approximation estimates for the effect of disorder on the valence band quasiparticles. We predict a prominent feature in the ac-Hall conductivity at a frequency that varies over the range from 200 to 400 meV, depending on Mn and carrier densities, and is associated with transitions between heavy-hole and light-hole bands. In its zero frequency limit, our Hall conductivity reduces to the $\vec k$-space Berry's phase value predicted by a recent theory of the anomalous Hall effect that is able to account quantitatively for experiment. We compute theoretical estimates for magnetic circular dichroism, Faraday rotation, and Kerr effect parameters as a function of Mn concentration and free carrier density. The mid-infrared response feature is present in each of these magneto-optical effects.

cond-mat.mtrl-sci↗

arXiv2002

Theoretical models of ferromagnetic III-V semiconductors

Recent materials research has advanced the maximum ferromagnetic transition temperature in semiconductors containing magnetic elements toward room temperature. Reaching this goal would make information technology applications of these materials likely. In this article we briefly review the status of work over the past five years which has attempted to achieve a theoretical understanding of these complex magnetic systems. The basic microscopic origins of ferromagnetism in the (III,Mn)V compounds that have the highest transition temperatures appear to be well understood, and efficient computation methods have been developed which are able to model their magnetic, transport, and optical properties. However many questions remain.

cond-mat.mtrl-sci↗

arXiv2002

Non-Drude Optical Conductivity of (III,Mn)V Ferromagnetic Semiconductors

We present a numerical model study of the zero-temperature infrared optical properties of (III,Mn)V diluted magnetic semiconductors. Our calculations demonstrate the importance of treating disorder and interaction effects simultaneously in modelling these materials. We find that the conductivity has no clear Drude peak, that it has a broadened inter-band peak near 220 meV, and that oscillator weight is shifted to higher frequencies by stronger disorder. These results are in good qualitative agreement with recent thin film absorption measurements. We use our numerical findings to discuss the use of f-sum rules evaluated by integrating optical absorption data for accurate carrier-density estimates.

cond-mat.mtrl-sci↗

arXiv2002

Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As

We report on a theoretical study of dc transport coefficients in (Ga,Mn)As diluted magnetic semiconductor ferromagnets that accounts for quasiparticle scattering from ionized Mn$^{2+}$ acceptors with a local moment $S=5/2$ and from non-magnetic compensating defects. In metallic samples Boltzmann transport theory with Golden rule scattering rates accounts for the principle trends of the measured difference between resistances for magnetizations parallel and perpendicular to the current. We predict that the sign and magnitude of the anisotropic magnetoresistance can be changed by strain engineering or by altering chemical composition.

cond-mat.mtrl-sci↗

arXiv2002

Quantum Melting and Absence of Bose-Einstein Condensation in Two-Dimensional Vortex Matter

We demonstrate that quantum fluctuations suppress Bose-Einstein condensation of quasi-two-dimensional bosons in a rapidly-rotating trap. Our conclusions rest in part on an effective-Lagrangian description of the triangular vortex lattice, and in part on microscopic Bogoliubov equations in the rapid-rotation limit. We obtain analytic expressions for the collective-excitation dispersion, which, in a rotating system, is quadratic rather than linear. Our estimates for the boson filling factor at which the vortex lattice melts at zero temperature due to quantum fluctuations are consistent with recent exact-diagonalization calculations.

cond-mat↗

arXiv2002

Infrared conductivity of metallic (III,Mn)V ferromagnets

We present a theory of the infrared conductivity and absorption coefficients of metallic (III,Mn)V ferromagnetic semiconductors. We find that the conductivity is dominated by inter-valence-band transitions that produce peaks at $\hbar ω\sim 220 {\rm meV}$ and obscure the broadened Drude peak. We demonstrate that transverse f-sum rule measurements can be used to extract accurate values for the free carrier density, bypassing the severe characterization difficulties that have till now been created by the large anomalous Hall effect in these materials.

cond-mat.mtrl-sci↗

arXiv2002

Electron-Phonon Interactions in Polyacene Organic Transistors

We present a simple model for the electron-phonon interactions between the energy subbands in polyacene field-effect transistors and the vibrations of the crystal. We introduce a generalized Su-Schrieffer-Heeger model, arguing that the strongest electron-phonon interactions in these systems originate from the dependence of inter-molecule hopping amplitudes on collective molecular motion. We compute the electron-phonon spectral function $α^2F(ω)$ as a function of two-dimensional hole density and the coupling strength constant. Our results are in agreement with the sharp onset of superconductivity near half-filling discovered in recent experiments by Schön {\it et al.} [Batlogg] and predict an increase of $T_c$ with pressure. We further speculate on the implications that the observation of the quantum Hall effect in these systems has on the effective band mass in the low carrier density regime.

cond-mat.supr-con↗

arXiv2002

Disorder and interactions in quantum Hall ferromagnets: effects of disorder in Skyrmion physics

We present a Hartree-Fock study of the competition between disorder and interactions in quantum Hall ferromagnets near $ν=1$. We find that the ground state at $ν=1$ evolves with increasing interaction strength from a quasi-metallic paramagnet, to a partially spin-polarized ferromagnetic Anderson insulator, and to a fully spin-polarized ferromagnet with a charge gap. Away from $ν=1$, the ground state evolves from a conventional Anderson insulator, to a conventional quasiparticle glass, and finally to a ferromagnetic Skyrmion quasiparticle glass. These different regimes can be measured in low-temperature transport and NMR experiments. We present calculations for the NMR spectra in different disorder regimes.

cond-mat.mes-hall↗

arXiv2002

Curie Temperature Trends in (III,Mn)V Ferromagnetic Semiconductors

We present a theoretical survey of ferromagnetic transition temperatures in cubic (III,Mn)V semiconductors based on a model with $S=5/2$ local moments exchange-coupled to itinerant holes in the host semiconductor valence band. Starting from the simplest mean-field theory of this model, we estimate the $T_c$ enhancement due to exchange and correlation in the itinerant-hole system, and the $T_c$ suppression due to collective fluctuations of the ordered moments. We show that high critical temperatures in these ferromagnetic semiconductors require both the large magnetic susceptibility contribution from the valence band's heavy holes and the large spin stiffness that results from strong spin-orbit coupling in the valence band. Our calculations demonstrate that this model for the ferromagnetism of these systems is fully consistent with the room-temperature ferromagnetism reported for Mn doped nitrides.

cond-mat.mtrl-sci↗

arXiv2001

2D bands and electron-phonon interactions in polyacene plastic transistors

We present a simple tight-binding model for the two-dimensional energy bands of polyacene field-effect transistors and for the coupling of these bands to lattice vibrations of their host molecular crystal. We argue that the strongest electron-phonon interactions in these systems originate from the dependence of inter-molecule hopping amplitudes on collective molecular motion, and introduce a generalized Su-Schrieffer-Heeger model that accounts for all vibrations and is parameter-free once the band mass has been specified. We compute the electron-phonon spectral function $α^2F(ω)$ as a function of two-dimensional hole density, and are able to explain the onset of superconductivity near 2D carrier density $n_{2D} \sim 10^{14} cm^{-2}$, discovered in recent experiments by Schön {\it et al.} \onlinecite{Batlogg}.

cond-mat.supr-con↗