arXiv subjects

Jairo Sinova

Publications and source records attributed to Jairo Sinova.

At least 181 records · Page 10Linked to original sources

arXiv2006

Charge and spin Hall conductivity in metallic graphene

Graphene has an unusual low-energy band structure with four chiral bands and half-quantized and quantized Hall effects that have recently attracted theoretical and experimental attention. We study the Fermi energy and disorder dependence of its spin Hall conductivity. In the metallic regime we find that vertex corrections enhance the intrinsic spin Hall conductivity and that skew scattering can lead to its values that exceed the quantized ones expected when the chemical potential is inside the spin-orbit induced energy gap. We predict that large spin Hall conductivities will be observable in graphene even when the spin-orbit gap does not survive disorder.

cond-mat.mes-hall↗

arXiv2006

Disorder effects in the AHE induced by Berry curvature

We describe the charge transport in ferromagnets with spin orbit coupled Bloch bands by combining the wave-packet evolution equations with the classical Boltzmann equation. This approach can be justified in the limit of smooth disorder potential. Besides the skew scattering contribution, we demonstrate how other effects of disorder appear which are closely linked to the Berry curvature of the Bloch states associated with the wavepacket. We show that, although being of the same order of magnitude as the clean limit Berry curvature contribution, generally disorder corrections depend differently on various parameters and can lead to the sign reversal of the Hall current as the function of the chemical potential in systems with a non-constant Berry curvature in momentum space. Earlier conclusions on the effects of disorder on the anomalous Hall effect depended stricly on the lack of momentum dependence of the Berry curvature in the models studied and generalizations of their findings to other systems with more complicated band structures were unjustified.

cond-mat.mes-hall↗

arXiv2005

Spin-Hall effect: Back to the Beginning on a Higher Level

The phenomena of the spin-Hall effect, initially proposed over three decades ago in the context of asymmetric Mott skew scattering, was revived recently by the proposal of a possible intrinsic spin-Hall effect originating from a strongly spin-orbit coupled band structure. This new proposal has generated an extensive debate and controversy over the past two years. The purpose of this workshop, held at the Asian Pacific Center for Theoretical Physics, was to bring together many of the leading groups in this field to resolve such issues and identify future challenges. We offer this short summary to clarify the now settled issues on some of the more controversial aspects of the debate and help refocus the research efforts in new and important avenues.

cond-mat.mes-hall↗

arXiv2005

Physical Limits of the ballistic and non-ballistic Spin-Field-Effect Transistor: Spin Dynamics in Remote Doped Structures

We investigate the spin dynamics and relaxation in remotely-doped two dimensional electron systems where the dopants lead to random fluctuations of the Rashba spin-orbit coupling. Due to the resulting random spin precession, the spin relaxation time is limited by the strength and spatial scale of the random contribution to the spin-orbit coupling. We concentrate on the role of the randomness for two systems where the direction of the spin-orbit field does not depend on the electron momentum: the spin field-effect transistor with balanced Rashba and Dresselhaus couplings and the (011) quantum well. Both of these systems are considered as promising for the spintronics applications because of the suppression of the Dyakonov-Perel' mechanism there makes the realization of a spin field effect transistor in the diffusive regime possible. We demonstrate that the spin relaxation through the randomness of spin-orbit coupling imposes important physical limitations on the operational properties of these devices.

cond-mat.dis-nn↗

arXiv2005

Edge spin accumulation in semiconductor two-dimensional hole gases

The controlled generation of localized spin densities is a key enabler of semiconductor spintronics In this work, we study spin Hall effect induced edge spin accumulation in a two-dimensional hole gas with strong spin orbit interactions. We argue that it is an intrinsic property, in the sense that it is independent of the strength of disorder scattering. We show numerically that the spin polarization near the edge induced by this mechanism can be large, and that it becomes larger and more strongly localized as the spin-orbit coupling strength increases, and is independent of the width of the conducting strip once this exceeds the elastic scattering mean-free-path. Our experiments in two-dimensional hole gas microdevices confirm this remarkable spin Hall effect phenomenology. Achieving comparable levels of spin polarization by external magnetic fields would require laboratory equipment whose physical dimensions and operating electrical currents are million times larger than those of our spin Hall effect devices.

cond-mat.mes-hall↗

arXiv2005

Direct observation of the Aharonov-Casher phase

Ring structures fabricated from HgTe/HgCdTe quantum wells have been used to study Aharonov-Bohm type conductance oscillations as a function of Rashba spin-orbit splitting strength. We observe non-monotonic phase changes indicating that an additional phase factor modifies the electron wave function. We associate these observations with the Aharonov-Casher effect. This is confirmed by comparison with numerical calculations of the magneto-conductance for a multichannel ring structure within the Landauer-Büttiker formalism.

cond-mat.mes-hall↗

arXiv2005

Low-temperature magnetization of (Ga,Mn)As semiconductors

We report on a comprehensive study of the ferromagnetic moment per Mn atom in (Ga,Mn)As ferromagnetic semiconductors. Theoretical discussion is based on microscopic calculations and on an effective model of Mn local moments antiferromagnetically coupled to valence band hole spins. The validity of the effective model over the range of doping studied is assessed by comparing with microscopic tight-binding/coherent-potential approximation calculations. Using the virtual crystal k.p model for hole states, we evaluate the zero-temperature mean-field contributions to the magnetization from the hole kinetic and exchange energies, and magnetization suppression due to quantum uctuations of Mn moment orientations around their mean-field ground state values. Experimental low-temperature ferromagnetic moments per Mn are obtained by superconducting quantum interference device and x-ray magnetic circular dichroism measurements in a series of (Ga,Mn)As semiconductors with nominal Mn doping ranging from ~2% to 8%. Hall measurements in as-grown and annealed samples are used to estimate the number of uncompensated substitutional Mn moments. Based on our comparison between experiment and theory we conclude that all these Mn moments in high quality (Ga,Mn)As materials have nearly parallel ground state alignment.

cond-mat.mtrl-sci↗

arXiv2005

Can Non-Equilibrium Spin Hall Accumulation be Induced in Ballistic Nanostructures?

We demonstrate that flow of longitudinal unpolarized current through a ballistic two-dimensional electron gas with Rashba spin-orbit coupling will induce nonequilibrium spin accumulation which has opposite sign for the two lateral edges and it is, therefore, the principal observable signature of the spin Hall effect in two-probe semiconductor nanostructures. The magnitude of its out-of-plane component is gradually diminished by static disorder, while it can be enhanced by an in-plane transverse magnetic field. Moreover, our prediction of the longitudinal component of the spin Hall accumulation, which is insensitive to the reversal of the bias voltage, offers a smoking gun to differentiate experimentally between the extrinsic, intrinsic, and mesoscopic spin Hall mechanisms.

cond-mat.mes-hall↗

arXiv2005

Co-planar spin-polarized light emitting diode

Studies of spin manipulation in semiconductors has benefited from the possibility to grow these materials in high quality on top of optically active III-V systems. The induced electroluminescence in these layered semiconductor heterostructures has been used for a reliable spin detection. In semiconductors with strong spin-orbit interaction, the sensitivity of vertical devices may be insufficient, however, because of the sepration of the spin aligner part and the spin detection region by one or more heterointerfaces and becuse of the short spin coherence length. Here we demostrate that higly sensitive spin detection can be achieved using a lateral arrangement of the spin polarized and optically active regions. Using our co-planar spin-polarized light emitting diodes we detect electrical field induced spin generation in a semiconductor heterojunction two-dimensional hole gas. The polarization results from spin asymmetric recombination of injected electrons with strongly SO coupled two-dimensional holes. The possibility to detect magnetized Co particles deposited on the co-planar diode structure is also demonstrated.

cond-mat.mes-hall↗

arXiv2005

Dependence of the intrinsic spin Hall effect on spin-orbit interaction character

We report on a comparative numerical study of the spin Hall conductivity in two-dimensions for three different spin-orbit interaction models; the standard k-linear Rashba model, the k-cubic Rashba model that describes two-dimensional hole systems, and a modified k-linear Rashba model in which the spin-orbit coupling strength is energy dependent. Numerical finite-size Kubo formula results indicate that the spin Hall conductivity of the k-linear Rashba model vanishes for frequency $ω$ much smaller than the scattering rate $τ^{-1}$, with order one relative fluctuations surviving out to large system sizes. For the k-cubic Rashba model case, the spin Hall conductivity does not depend noticeably on $ωτ$ and is finite in the {\em dc} limit, in agreement with experiment. For the modified k-linear Rashba model the spin Hall conductivity is noticeably $ωτ$ dependent but approaches a finite value in the {\em dc} limit. We discuss these results in the light of a spectral decomposition of the spin Hall conductivity and associated sum rules, and in relation to a proposed separation of the spin Hall conductivity into skew-scattering, intrinsic, and interband vertex correction contributions.

cond-mat.mes-hall↗

arXiv2005

Charge Hall effect driven by spin-dependent chemical potential gradients and Onsager relations in mesoscopic systems

We study theoretically the spin-Hall effect as well as its reciprocal phenomenon (a transverse charge current driven by a spin-dependent chemical potential gradient) in electron and hole finite size mesoscopic systems. The Landauer-Buttiker-Keldysh formalism is used to model samples with mobilities and Rashba coupling strengths which are experimentally accessible and to demonstrate the appearance of measurable charge currents induced by the spin-dependent chemical potential gradient in the reciprocal spin-Hall effect. We also demonstrate that within the mesoscopic coherent transport regime the Onsager relations are fulfilled for the disorder averaged conductances for electron and hole mesoscopic systems.

cond-mat.mes-hall↗

arXiv2005

Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors

We report on a comprehensive combined experimental and theoretical study of Curie temperature trends in (Ga,Mn)As ferromagnetic semiconductors. Broad agreement between theoretical expectations and measured data allows us to conclude that T_c in high-quality metallic samples increases linearly with the number of uncompensated local moments on Mn_Ga acceptors, with no sign of saturation. Room temperature ferromagnetism is expected for a 10% concentration of these local moments. Our magnetotransport and magnetization data are consistnent with the picture in which Mn impurities incorporated during growth at interstitial Mn_I positions act as double-donors and compensate neighboring Mn_Ga local moments because of strong near-neighbor Mn_Ga-Mn_I antiferromagnetic coupling. These defects can be efficiently removed by post-growth annealing. Our analysis suggests that there is no fundamental obstacle to substitutional Mn_Ga doping in high-quality materials beyond our current maximum level of 6.2%, although this achievement will require further advances in growth condition control. Modest charge compensation does not limit the maximum Curie temperature possible in ferromagnetic semiconductors based on (Ga,Mn)As.

cond-mat.mtrl-sci↗

arXiv2005

Experimental observation of the spin-Hall effect in a two dimensional spin-orbit coupled semiconductor system

We report the experimental observation of the spin-Hall effect in a two-dimensional (2D) hole system with Rashba spin-orbit coupling. The 2D hole layer is a part of a p-n junction light-emitting diode with a specially designed co-planar geometry which allows an angle-resolved polarization detection at opposite edges of the 2D hole system. In equilibrium the angular momenta of the Rashba split heavy hole states lie in the plane of the 2D layer. When an electric field is applied across the hole channel a non zero out-of-plane component of the angular momentum is detected whose sign depends on the sign of the electric field and is opposite for the two edges. Microscopic quantum transport calculations show only a weak effect of disorder suggesting that the clean limit spin-Hall conductance description (intrinsic spin-Hall effect) might apply to our system.

cond-mat.mes-hall↗

arXiv2004

Non-vanishing spin Hall currents in disordered spin-orbit coupling systems

Spin currents that flow perpendicular to the electric field direction are generic in metals and doped semiconductors with spin-orbit coupling. It has recently been argued that the spin Hall conductivity can be dominated by an intrinsic contribution which follows from Bloch state distortion in the presence of an electric field. Here we report on an numerical demonstration of the robustness of this effect in the presence of disorder scattering for the case of a two-dimensional electron-gas with Rashba spin-orbit interactions (R2DES).

cond-mat.mes-hall↗

arXiv2004

Manifestation of the spin-Hall effect through transport measurements in the mesoscopic regime

We study theoretically the manifestation of the spin-Hall effect in a two-dimensional electronic system with Rashba spin-orbit coupling via dc-transport measurements in realistic mesoscopic H-shape structures. The Landauer-Buttiker formalism is used to model samples with mobilities and Rashba coupling strengths of current experiments and to demonstrate the appearance of a measurable Rashba-coupling dependent voltage. This type of measurement requires only metal contacts, i.e., no magnetic elements are present. We also confirm the robustness of the intrinsic spin-Hall effect against disorder in the mesoscopic metallic regime in agreement with results of exact diagonalization studies in the bulk.

cond-mat.mes-hall↗

arXiv2004

Semiclassical theory of spin transport in spin-orbit coupled systems

Motivated by recent interest in novel spintronics effects, we develop a semiclassical theory of spin transport that is valid for spin-orbit coupled bands. Aside from the obvious convective term in which the average spin is transported at the wavepacket group velocity, the spin current has additional contributions from the wavepacket's spin and torque dipole moments. Electric field corrections to the group velocity and carrier spin contribute to the convective term. Summing all terms we obtain an expression for the intrinsic spin-Hall conductivity of a hole-doped semiconductor, which agrees with the Kubo formula prediction for the same quantity. We discuss the calculation of spin accumulation, which illustrates the importance of the torque dipole near the boundary of the system.

cond-mat.mes-hall↗

arXiv2004

Dielectric Function of Diluted Magnetic Semiconductors in the Infrared Regime

We present a study of the dielectric function of metallic (III,Mn)V diluted magnetic semiconductors in the infrared regime. Our theoretical approach is based on the kinetic exchange model for carrier induced (III,Mn)V ferromagnetism. The dielectric function is calculated within the random phase approximation and, within this metallic regime, we treat disorder effects perturbatively and thermal effects within the mean field approximation. We also discuss the implications of this calculations on carrier concentration measurements from the optical f-sum rule and the analysis of plasmon-phonon coupled modes in Raman spectra.

cond-mat.mtrl-sci↗

arXiv2004

Optical properties of metallic (III,Mn)V ferromagnetic semiconductors in the infrared to visible range

We report on a study of the ac conductivity and magneto-optical properties of metallic ferromagnetic (III,Mn)V semiconductors in the infrared to visible spectrum. Our analysis is based on the successful kinetic exchange model for (III,Mn)V ferromagnetic semiconductors. We perform the calculations within the Kubo formalism and treat the disorder effects pertubatively within the Born approximation, valid for the metallic regime. We consider an eight-band Kohn-Luttinger model (six valence bands plus two conduction bands) as well as a ten-band model with additional dispersionless bands simulating phenomenologically the upper-mid-gap states induced by antisite and interstitial impurities. These models qualitatively account for optical-absorption experiments and predict new features in the mid-infrared Kerr angle and magnetic-circular-dichroism properties as a function of Mn concentration and free carrier density.

cond-mat.mtrl-sci↗