arXiv subjects

Jairo Sinova

Publications and source records attributed to Jairo Sinova.

At least 163 records · Page 9Linked to original sources

arXiv2008

Effect of Induced Spin-Orbit Coupling for Atoms via Laser Fields

We propose an experimental scheme to study spin-orbit coupling effects in a of two-dimensional (2D) Fermi atomic gas cloud by coupling its internal electronic states (pseudospins) to radiation in a delta configuration. The induced spin-orbit coupling can be of the Dresselhaus and Rashba type with and without a Zeeman term. We show that the optically induced spin-orbit coupling can lead to a spin-dependent effective mass under appropriate condition, with one of them able to be tuned between positive and negative effective mass. As a direct observable we show that in the expansion dynamics of the atomic cloud the initial atomic cloud splits into two clouds for the positive effective mass case regime, and into four clouds for the negative effective mass regime.

cond-mat.stat-mech↗

arXiv2008

Semiclassical framework for the calculation of transport anisotropies

We present a procedure for finding the exact solution to the linear-response Boltzmann equation for two-dimensional anisotropic systems and demonstrate it on examples of non-crystalline anisotropic magnetoresistance in a system with spin-orbit interaction. We show that two decoupled integral equations must be solved in order to find the non-equilibrium distribution function up to linear order in the applied electric field. The examples are all based on the Rashba system with charged magnetic scatterers, a system where the non-equilibrium distribution function and anisotropic magnetoresistance can be evaluated analytically. Exact results are compared to earlier widely-used approximative approaches. We find circumstances under which approximative approaches may become unreliable even on a qualitative level.

cond-mat.other↗

arXiv2008

Aharonov-Casher and spin Hall effects in two-dimensional mesoscopic ring structures with strong spin-orbit interaction

We study the quantum interference effects induced by the Aharonov-Casher phase in asymmetrically confined two-dimensional electron and heavy-hole ring structures systems taking into account the electrically tunable spin-orbit (SO) interaction. We have calculated the non-adiabatic transport properties of charges (heavy-holes and electrons) in two-probe thin ring structures and compare how the form of the SO coupling of the carries affects it. We show that both the SO splitting of the bands and the carrier density can be used to modulate the conductance through the ring. We show that the dependence on carrier density is due to the backscattering from the leads which shows pronounce resonances when the Fermi energy is close to the eigenenergy of the ring. We also calculate the spin Hall conductivity and longitudinal conductivity in four-probe rings as a function of the carrier density and SO interaction, demonstrating that for heavy-hole carriers both conductivities are larger than for electrons. Finally, we investigate the transport properties of mesoscopic rings with spatially inhomogeneous SO coupling. We show that devices with inhomogeneous SO interaction exhibit an electrically controlled spin-flipping mechanism.

cond-mat.mes-hall↗

arXiv2008

Curie point singularity in the temperature derivative of resistivity in (Ga,Mn)As

We observe a singularity in the temperature derivative $dρ/dT$ of resistivity at the Curie point of high-quality (Ga,Mn)As ferromagnetic semiconductors with $T_c$'s ranging from approximately 80 to 185 K. The character of the anomaly is sharply distinct from the critical contribution to transport in conventional dense-moment magnetic semiconductors and is reminiscent of the $dρ/dT$ singularity in transition metal ferromagnets. Within the critical region accessible in our experiments, the temperature dependence on the ferromagnetic side can be explained by dominant scattering from uncorrelated spin fluctuations. The singular behavior of $dρ/dT$ on the paramagnetic side points to the important role of short-range correlated spin fluctuations.

cond-mat.mtrl-sci↗

arXiv2008

Hybrid skew scattering regime of the anomalous Hall effect in Rashba systems: unifying Keldysh, Boltzmann, and Kubo formalisms

We present the analytical description of the anomalous Hall effect (AHE) in a 2DEG ferromagnet within the Keldysh formalism. These results unify all three linear response approaches to anomalous Hall transport and close a long standing debate. We are able to identify a new extrinsic AHE regime dominated by a hybrid skew scattering mechanism. This new contribution is inversely proportional to the impurity concentration, resembling the normal skew scattering, {\em but} independent of the impurity-strength, resembling the side-jump mechanism. Within the Kubo formalism this regime is captured by higher order diagrams which, although weak, dominate when both subbands are occupied; this regime can be detected by variable remote doping experiments that we describe.

cond-mat.mes-hall↗

arXiv2008

Superfluid Density in High-$T_c$ Superconductors: Enabled by Holes or Suppressed by Electrons?

The critical temperature of an underdoped cuprate superconductor is limited by its phase stiffness $ρ$. In this Letter we argue that the dependence of $ρ$ on doping $x$ should be understood as a consequence of deleterious competition with antiferromagnetism at large electron densities, rather than as evidence for pairing of holes in the $x =0$ Mott insulator state. Our proposal is based on the observation that the correlation energy of a d-wave superconductor increases in magnitude at finite pairing wavevector when antiferromagnetic fluctuations are strong.

cond-mat.str-el↗

arXiv2007

The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices

We present details of our experimental and theoretical study of the components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. We develop experimental methods to yield directly the non-crystalline and crystalline AMR components which are then independently analyzed. These methods are used to explore the unusual phenomenology of the AMR in ultra thin (5nm) (Ga,Mn)As layers and to demonstrate how the components of the AMR can be engineered through lithography induced local lattice relaxations. We expand on our previous [Phys. Rev. Lett. \textbf{99}, 147207 (2007)] theoretical analysis and numerical calculations to present a simplified analytical model for the origin of the non-crystalline AMR. We find that the sign of the non-crystalline AMR is determined by the form of spin-orbit coupling in the host band and by the relative strengths of the non-magnetic and magnetic contributions to the impurity potential.

cond-mat.mes-hall↗

arXiv2007

Nanomechanical Spin-Polarizer

Torsional oscillations of a free-standing semiconductor beam are shown to cause spin-dependent oscillating potentials that spin-polarize an applied charge current in the presence of intentional or disorder scattering potentials. We propose several realizations of mechanical spin generators and manipulators based on this piezo-spintronic effect.

cond-mat.mes-hall↗

arXiv2007

Aharonov-Casher effect in a two dimensional hole gas with spin-orbit interaction

We study the quantum interference effects induced by the Aharonov-Casher phase in a ring structure in a two-dimensional heavy hole (HH) system with spin-orbit interaction realizable in narrow asymmetric quantum wells. The influence of the spin-orbit interaction strength on the transport is investigated analytically. These analytical results allow us to explain the interference effects as a signature of the Aharonov-Casher Berry phases. Unlike previous studies on the electron two-dimensional Rashba systems, we find that the frequency of conductance modulations as a function of the spin-orbit strength is not constant but increases for larger spin-orbit splittings. In the limit of thin channel rings (width smaller than Fermi wavelength), we find that the spin-orbit splitting can be greatly increased due to quantization in the radial direction. We also study the influence of magnetic field considering both limits of small and large Zeeman splittings.

cond-mat.mes-hall↗

arXiv2007

Anisotropic Magnetoresistance components in (Ga,Mn)As

Our experimental and theoretical study of the non-crystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As is aimed at exploring the basic physical aspects of this relativistic transport effect. The non-crystalline AMR reflects anisotropic lifetimes of the holes due to polarized Mn impurities while the crystalline AMR is associated with valence band warping. We find that the sign of the non-crystalline AMR is determined by the form of spin-orbit coupling in the host band and by the relative strengths of the non-magnetic and magnetic contributions to the impurity potential. We develop experimental methods directly yielding the non-crystalline and crystalline AMR components which are then independently analyzed. We report the observation of an AMR dominated by a large uniaxial crystalline component and show that AMR can be modified by local strain relaxation. We discuss generic implications of our experimental and theoretical findings including predictions for non-crystalline AMR sign reversals in dilute moment systems.

cond-mat.mes-hall↗

arXiv2007

Magnetocrystalline anisotropy controlled local magnetic configurations in (Ga,Mn)As spin-transfer-torque microdevices

The large saturation magnetization in conventional dense moment ferromagnets offers flexible means of manipulating the ordered state through demagnetizing shape anisotropy fields but these dipolar fields, in turn, limit the integrability of magnetic elements in information storage devices. We show that in a (Ga,Mn)As dilute moment ferromagnet, with comparatively weaker magnetic dipole interactions, locally tunable magnetocrystalline anisotropy can take the role of the internal field which determines the magnetic configuration. Experiments and theoretical modeling are presented for lithographically patterned microchannels and the phenomenon is attributed to lattice relaxations across the channels. The utility of locally controlled magnetic anisotropies is demonstrated in current induced switching experiments. We report structure sensitive, current induced in-plane magnetization switchings well below the Curie temperature at critical current densities 10^5 Acm^-2. The observed phenomenology shows signatures of a contribution from domain-wall spin-transfer-torque effects.

cond-mat.mes-hall↗

arXiv2007

Functional Keldysh Theory of Spin Torques

We present a microscopic treatment of current-induced torques and thermal fluctuations in itinerant ferromagnets based on a functional formulation of the Keldysh formalism. We find that the nonequilibrium magnetization dynamics is governed by a stochastic Landau-Lifschitz-Gilbert equation with spin transfer torques. We calculate the Gilbert damping parameter $α$ and the non-adiabatic spin transfer torque parameter $β$ for a model ferromagnet. We find that $β\neq α$, in agreement with the results obtained using imaginary-time methods of Kohno, Tatara and Shibata [J. Phys. Soc. Japan 75, 113706 (2006)]. We comment on the relationship between $s-d$ and isotropic-Stoner toy models of ferromagnetism and more realistic density-functional-theory models, and on the implications of these relationships for predictions of the $β/α$ ratio which plays a central role in domain wall motion. Only for a single-parabolic-band isotropic-Stoner model with an exchange splitting that is small compared to the Fermi energy does $β/α$ approach one. In addition, our microscopic formalism incorporates naturally the fluctuations needed in a nonzero-temperature description of the magnetization. We find that to first order in the applied electric field, the usual form of thermal fluctuations via a phenomenological stochastic magnetic field holds.

cond-mat.mes-hall↗

arXiv2007

On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover

We discuss the character of states near the Fermi level in Mn doped GaAs, as revealed by a survey of dc transport and optical studies over a wide range of Mn concentrations. A thermally activated valence band contribution to dc transport, a mid-infrared peak at energy hbar omega approx 200 meV in the ac- conductivity, and the hot photoluminescence spectra indicate the presence of an impurity band in low doped (<<1% Mn) insulating GaAs:Mn materials. Consistent with the implications of this picture, both the impurity band ionization energy inferred from the dc transport and the position of the mid-infrared peak move to lower energies and the peak broadens with increasing Mn concentration. In metallic materials with > 2% doping, no traces of Mn-related activated contribution can be identified in dc-transport, suggesting that the impurity band has merged with the valence band. No discrepancies with this perception are found when analyzing optical measurements in the high-doped GaAs:Mn. A higher energy (hbar omega approx 250 meV) mid-infrared feature which appears in the metallic samples is associated with inter-valence band transitions. Its red-shift with increased doping can be interpreted as a consequence of increased screening which narrows the localized-state valence-band tails and weakens higher energy transition amplitudes. Our examination of the dc and ac transport characteristics of GaAs:Mn is accompanied by comparisons with its shallow acceptor counterparts, confirming the disordered valence band picture of high-doped metallic GaAs:Mn material.

cond-mat.mtrl-sci↗

arXiv2007

Anomalous Hall effect in a two-dimensional electron gas

The anomalous Hall effect in a magnetic two-dimensional electron gas with Rashba spin-orbit coupling is studied within the Kubo-Streda formalism in the presence of pointlike potential impurities. We find that all contributions to the anomalous Hall conductivity vanish to leading order in disorder strength when both chiral subbands are occupied. In the situation that only the majority subband is occupied, all terms are finite in the weak scattering limit and the total anomalous Hall conductivity is dominated by skew scattering. We compare our results to previous treatments and resolve some of the discrepancies present in the literature.

cond-mat.mtrl-sci↗

arXiv2007

Absence of skew scattering in two-dimensional systems: Testing the origins of the anomalous Hall effect

We study the anomalous Hall conductivity in spin-polarized, asymmetrically confined two-dimensional electron and hole systems, focusing on skew-scattering contributions to the transport. We find that the skew scattering, principally responsible for the extrinsic contribution to the anomalous Hall effect, vanishes for the two-dimensional electron system if both chiral Rashba subbands are partially occupied, and vanishes always for the two-dimensional hole gas studied here, regardless of the band filling. Our prediction can be tested with the proposed coplanar two-dimensional electron/hole gas device and can be used as a benchmark to understand the crossover from the intrisic to the extrinsic anomalous Hall effect.

cond-mat.mtrl-sci↗

arXiv2006

Anomalous Hall effect in 2D Dirac band: link between Kubo-Streda formula and semiclassical Boltzmann equation approach

The anomalous Hall effect (AHE) is a consequence of spin-orbit coupling in a ferromagnetic metal and is related primarily to density-matrix response to an electric field that is off-diagonal in band index. For this reason disorder contributions to the AHE are difficult to treat systematically using a semi-classical Boltzmann equation approach, even when weak localization corrections are disregarded. In this article we explicitly demonstrate the equivalence of an appropriately modified semiclassical transport theory which includes anomalous velocity and side jump contributions and microscopic Kubo-Streda perturbation theory, with particular unconventional contributions in the semiclassical theory identified with particular Feynman diagrams when calculations are carried out in a band-eigenstate representation. The equivalence we establish is verified by explcit calculations for the case of the two-dimensional (2D) Dirac model Hamiltonian relevant to graphene.

cond-mat.mes-hall↗

arXiv2006

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, GaP or (Al,Ga)As which opens a wide area of possibilities for optimizing the host composition towards higher ferromagnetic Curie temperatures. Here we explore theoretically ferromagnetism and Mn incorporation in Ga(As,P) and (Al,Ga)As ternary hosts. While alloying (Ga,Mn)As with Al has only a small effect on the Curie temperature we predict a sizable enhancement of Curie temperatures in the smaller lattice constant Ga(As,P) hosts. Mn-doped Ga(As,P) is also favorable, as compared to (Al,Ga)As, with respect to the formation of carrier and moment compensating interstitial Mn impurities. In (Ga,Mn)(As,P) we find a marked decrease of the partial concentration of these detrimental impurities with increasing P content.

cond-mat.mtrl-sci↗

arXiv2006

Theory of ferromagnetic (III,Mn)V semiconductors

The body of research on (III,Mn)V diluted magnetic semiconductors initiated during the 1990's has concentrated on three major fronts: i) the microscopic origins and fundamental physics of the ferromagnetism that occurs in these systems, ii) the materials science of growth and defects and iii) the development of spintronic devices with new functionalities. This article reviews the current status of the field, concentrating on the first two, more mature research directions. From the fundamental point of view, (Ga,Mn)As and several other (III,Mn)V DMSs are now regarded as textbook examples of a rare class of robust ferromagnets with dilute magnetic moments coupled by delocalized charge carriers. Both local moments and itinerant holes are provided by Mn, which makes the systems particularly favorable for realizing this unusual ordered state. Advances in growth and post-growth treatment techniques have played a central role in the field, often pushing the limits of dilute Mn moment densities and the uniformity and purity of materials far beyond those allowed by equilibrium thermodynamics. In (III,Mn)V compounds, material quality and magnetic properties are intimately connected. In the review we focus on the theoretical understanding of the origins of ferromagnetism and basic structural, magnetic, magneto-transport, and magneto-optical characteristics of simple (III,Mn)V epilayers, with the main emphasis on (Ga,Mn)As. The conclusions we arrive at are based on an extensive literature covering results of complementary ab initio and effective Hamiltonian computational techniques, and on comparisons between theory and experiment.

cond-mat.mtrl-sci↗