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James A. Gott

Publications and source records attributed to James A. Gott.

3 recordsLinked to original sources

Predictive drift compensation of multi-frame STEM via live scan modification

Scanning transmission electron microscopy (STEM) is widely used tool for materials characterisation. However, being a scanned technique, STEM is susceptible to sample, stage or beam drift, manifesting as distortions within images or movement in the field-of-view during multi-frame imaging. Often this is corrected post-acquisition using image registration of multiple frames, but drift reduces the usable area common to all frames. Here we present a method to mitigate sample drift by analysing past frames to predict the sampling-grid points for the immediately future frame. We present this correction across two time-scales and two lengthscales. By offsetting the scan-grid framewise we remove long-range drift, and offsetting pixelwise we minimise intra-image warping. Examples are presented for both atomic-resolution imaging and lower-magnification in-situ video capture. The framework is general to raster, serpentine, interlaced and other scan patterns, as well as sequential or scan-rotation series STEM.

physics.ins-det

Interlacing in atomic resolution scanning transmission electron microscopy

Fast frame-rates are desirable in scanning transmission electron microscopy for a number of reasons: controlling electron beam dose, capturing in-situ events or reducing the appearance of scan distortions. Whilst several strategies exist for increasing frame-rates, many impact image quality or require investment in advanced scan hardware. Here we present an interlaced imaging approach to achieve minimal loss of image quality with faster frame-rates that can be implemented on many existing scan controllers. We further demonstrate that our interlacing approach provides the best possible strain precision for a given electron dose compared with other contemporary approaches.

physics.ins-det

Defect-Free Axially-Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

Axially-stacked quantum dots (QDs) in nanowires (NWs) have important applications in fabricating nanoscale quantum devices and lasers. Although their performances are very sensitive to crystal quality and structures, there is relatively little study on defect-free growth with Au-free mode and structure optimisation for achiving high performances. Here, we report a detailed study of the first self-catalyzed defect-free axially-stacked deep NWQDs. High structural quality is maintained when 50 GaAs QDs are placed in a single GaAsP NW. The QDs have very sharp interfaces (1.8~3.6 nm) and can be closely stacked with very similar structural properties. They exhibit the deepest carrier confinement (~90 meV) and largest exciton-biexciton splitting (~11 meV) among non-nitride III-V NWQDs, and can maintain good optical properties after being stored in ambient atmosphere for over 6 months due to excellent stability. Our study sets a solid foundation to build high-performance axially-stacked NWQD devices that are compatible with CMOS technologies.

physics.app-ph