arXiv subjects

Jan Meijer

Publications and source records attributed to Jan Meijer.

At least 19 recordsLinked to original sources

arXiv2026

High-cooperativity coupling and spin-resolved extinction of tin-vacancy centers in a diamond-like microcavity

The tin-vacancy (SnV) center in diamond is a promising spin-photon interface for quantum networks, combining favorable optical properties with spin coherence above 1K. Unfolding the full potential requires cavity enhancement to increase photon-emitter coupling efficiency. Here, we demonstrate cavity-enhanced light-matter coupling of SnV centers in a fully tunable Fabry-P\'erot microcavity operating at temperatures down to 1K with in-situ magnetic field control. We access the diamond-like regime of hybrid cavity modes through integration of low-roughness diamond membranes, where the field is concentrated inside the diamond and Purcell enhancement is maximized. Diamond-like modes deliver a more than two-fold increase in the effective Purcell factor over air-like modes, reaching $C_0 = 4.1(1)$ compared to $C_0 = 1.85(5)$ in the air-like case, while simultaneously relaxing mechanical stability requirements. Resonant probing reveals coherent cavity-emitter coupling with 96% extinction contrast and a coherent cooperativity of $C = 4.0(14)$. By applying a magnetic field, we further achieve spin-resolved cavity extinction, observing spin-selective optical transitions with a contrast of ${\cal C}_{\rm spin} = 0.91$. These results establish SnV centers in diamond coupled to open Fabry-P\'erot microcavities as a promising platform for efficient spin-photon interfaces.

quant-ph↗

arXiv2026

Oxygen in diamond: thermal stability of ST1 spin centres and creation of oxygen-pair complexes

Little is known about oxygen-related defects in diamond. Recently, the promising room-temperature spin centre named ST1 was identified as an oxygen centre, but of still unknown atomic structure and thermal stability. In this work, we report on the optically active oxygen-related centres and the conditions for their formation, using ion implantation of oxygen in various conditions of depth and fluence. More specifically, we establish the temperature formation/stability range of the ST1 centre, which has a maximum at about 1100{\deg}C and is narrower than for NV centres. In these conditions, optically detected magnetic resonance (ODMR) on small ST1 ensembles was measured with a spin readout contrast of > 20% at 300K. In cathodoluminescence, the 535 nm ST1 peak is not observed. Besides, a broad peak centred at 460 nm is measured for implantation of O$_2$ molecular ions. For an annealing temperature of 1500{\deg}C, a different centre is formed (with ZPL at 584.5 nm) with an intensity increasing with a power law 1.5 < p < 1.9 dependence from the implantation fluence. This suggests that this centre contains two oxygen atoms. Besides, a new spectral feature associated to an intrinsic defect was also observed, with four prominent lines (especially at 594nm). Finally, the thermal formation and stability of oxygen centres in diamond presented here are important for the identification of the atomic structure of defects such as the ST1 and possible O$_2$V$_x$ complex by means of ab initio calculations. Indeed, the formation energies and charge states of defect centres are easier to compute than the full energy level scheme, which to date still remains unsuccessful regarding the ST1 centre.

cond-mat.mtrl-sci↗

arXiv2024

Cavity-Enhanced Emission and Absorption of Color Centers in a Diamond Membrane With Selectable Strain

Group IV color centers in diamond are among the most promising optically active spin systems with strong optical transitions and long spin coherences. The ground-state splitting of the center is particularly important to suppress the interaction with coherence-limiting phonons, which improves the coherence properties and sets the upper limit for the operating temperature. Negatively charged silicon-vacancy centers have an ordinary ground-state splitting of only 48GHz, resulting in required temperatures below one Kelvin, which can only be achieved by dilution refrigerators. Here, we increase the ground-state splitting by up to an order of magnitude by induced strain in a single-crystal diamond membrane. Furthermore, we demonstrate cavity-assisted spectroscopy enabled by coupling the emitter ensemble with a selectable strain to the mode of a Fabry-Perot microcavity. Calculation of the absorption cross-section yields $\sigma_{ens} = $4.9*10^-11 cm^2. Together with the Purcell-enhanced twofold reduction in emitter lifetime below 1ns, this makes the system a promising spin-photon interface at moderate temperatures of 4K.

quant-ph↗

arXiv2024

Hopping of the center-of-mass of single G centers in silicon-on-insulator

Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metastable electron spin triplet. The G center is a unique defect where the standard Born-Oppenheimer approximation breaks down as one of its atoms can move between 6 lattice sites under optical excitation. The impact of this atomic reconfiguration on the photoluminescence properties of G centers is still largely unknown, especially in silicon-on-insulator (SOI) samples. Here, we investigate the displacement of the center-of-mass of the G center in silicon. We show that single G defects in SOI exhibit a multipolar emission and zero-phonon line fine structures with splittings up to $\sim1$ meV, both indicating a motion of the defect central atom over time. Combining polarization and spectral analysis at the single-photon level, we evidence that the reconfiguration dynamics are drastically different from the one of the unperturbed G center in bulk silicon. The SOI structure freezes the delocalization of the G defect center-of-mass and as a result, enables to isolate linearly polarized optical lines. Under above-bandgap optical excitation, the central atom of G centers in SOI behaves as if it were in a 6-slot roulette wheel, randomly alternating between localized crystal sites at each optical cycle. Comparative measurements in a bulk silicon sample and ab initio calculations highlight that strain is likely the dominant perturbation impacting the G center geometry. These results shed light on the importance of the atomic reconfiguration dynamics to understand and control the photoluminescence properties of the G center in silicon. More generally, these findings emphasize the impact of strain fluctuations inherent to SOI wafers for future quantum integrated photonics applications based on color centers in silicon.

quant-ph↗

arXiv2024

Microwave Control of the Tin-Vacancy Spin Qubit in Diamond with a Superconducting Waveguide

Group-IV color centers in diamond are promising candidates for quantum networks due to their dominant zero-phonon line and symmetry-protected optical transitions that connect to coherent spin levels. The negatively charged tin-vacancy (SnV) center possesses long electron spin lifetimes due to its large spin-orbit splitting. However, the magnetic dipole transitions required for microwave spin control are suppressed, and strain is necessary to enable these transitions. Recent work has shown spin control of strained emitters using microwave lines that suffer from Ohmic losses, restricting coherence through heating. We utilize a superconducting coplanar waveguide to measure SnV centers subjected to strain, observing substantial improvement. A detailed analysis of the SnV center electron spin Hamiltonian based on the angle-dependent splitting of the ground and excited states is performed. We demonstrate coherent spin manipulation and obtain a Hahn echo coherence time of up to $T_2 = 430\,\mu$s. With dynamical decoupling, we can prolong coherence to $T_2 = 10\,$ms, about six-fold improved compared to earlier works. We also observe a nearby coupling $^{13}\mathrm{C}$ spin which may serve as a quantum memory. This substantiates the potential of SnV centers in diamond and demonstrates the benefit of superconducting microwave structures.

quant-ph↗

arXiv2024

Genuine and faux single G centers in carbon-implanted silicon

Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around $1.28 \mu$m and identified to a common carbon-complex in silicon, namely the G center. However, inconsistent estimates regarding their quantum efficiency cast doubt on the correct identification of these individual emitters. Through a comparative analysis of their single-photon emission properties, we demonstrate that these single color centers are split in two distinct families of point defects. A first family consists of the genuine single G centers with a well-identified microscopic structure and whose photoluminescence has been investigated on ensemble measurements since the 60's. The remaining defects belong to a new color center, which we will refer to as G$^{\star}$ center, whose atomic configuration has yet to be determined. These results provide a safeguard against future defect misidentifications, which is crucial for further development of quantum technologies relying on G or G$^{\star}$ center quantum properties.

quant-ph↗

arXiv2023

Femtosecond laser induced creation of G and W-centers in silicon-on-insulator substrates

The creation of fluorescent defects in silicon is a key stepping stone towards assuring the integration perspectives of quantum photonic devices into existing technologies. Here we demonstrate the creation, by femtosecond laser annealing, of W and G-centers in commercial silicon on insulator (SOI) previously implanted with 12C+ ions. Their quality is comparable to that found for the same emitters obtained with conventional implant processes; as quantified by the photoluminescence radiative lifetime, the broadening of their zero-phonon line (ZPL) and the evolution of these quantities with temperature. In addition to this, we show that both defects can be created without carbon implantation and that we can erase the G-centers by annealing while enhancing the W-centers' emission. These demonstrations are relevant to the deterministic and operando generation of quantum emitters in silicon.

physics.optics↗

arXiv2022

Microscopic-scale recording of brain neuronal electrical activity using a diamond quantum sensor

An important tool in the investigation of the early stages of neurodegenerative disease is the study of dissected living tissue from the brain of an animal model. Such investigations allow the physical structure of individual neurons and neural circuits to be probed alongside neuronal electrical activity, disruption of which can shed light on the mechanisms of emergence of disease. Existing techniques for recording activity rely on potentially damaging direct interaction with the sample, either mechanically as point electrical probes or via intense focused laser light combined with highly specific genetic modification and/or potentially toxic fluorescent dyes. In this work, we instead perform passive, microscopic-scale recording of electrical activity using a biocompatible quantum sensor based on colour centres in diamond. We record biomagnetic field induced by ionic currents in mouse corpus callosum axons without direct sample interaction, accurately recovering signals corresponding to action potential propagation while demonstrating in situ pharmacology during biomagnetic recording through tetrodotoxin inhibition of voltage gated sodium channels. Our results open a promising new avenue for the microscopic recording of neuronal signals, offering the prospect of high resolution imaging of electrical circuits in the living mammalian brain.

physics.bio-ph↗

arXiv2022

Single G centers in silicon fabricated by co-implantation with carbon and proton

We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer which is locally implanted with carbon ions and protons at various fluences. Decreasing the implantation fluences enables to gradually switch from large ensembles to isolated single defects, reaching areal densities of G centers down to $\sim$0.2 $\mu$m$^{-2}$. Single defect creation is demonstrated by photon antibunching in intensity-correlation experiments, thus establishing our approach as a reproducible procedure for generating single artificial atoms in silicon for quantum technologies.

physics.app-ph↗

arXiv2022

Defect engineering of silicon with ion pulses from laser acceleration

Defect engineering is foundational to classical electronic device development and for emerging quantum devices. Here, we report on defect engineering of silicon single crystals with ion pulses from a laser accelerator with ion flux levels up to 10^22 ions/cm^2/s. Low energy ions from plasma expansion of the laser-foil target are implanted near the surface and then diffuse into silicon samples that were locally pre-heated by high energy ions. We observe low energy ion fluences of ~10^16 cm^-2, about four orders of magnitude higher than the fluence of high energy (MeV) ions. In the areas of highest energy deposition, silicon crystals exfoliate from single ion pulses. Color centers, predominantly W and G-centers, form directly in response to ion pulses without a subsequent annealing step. We find that the linewidth of G-centers increase in areas with high ion flux much more than the linewidth of W-centers, consistent with density functional theory calculations of their electronic structure. Laser ion acceleration generates aligned pulses of high and low energy ions that expand the parameter range for defect engineering and doping of semiconductors with tunable balances of ion flux, damage rates and local heating.

cond-mat.mtrl-sci↗

arXiv2021

Laser stimulation of muscle activity with simultaneous detection using a diamond colour centre biosensor

The detection of physiological activity at the microscopic level is key for understanding the function of biosystems and relating this to physical structure. Current sensing methods often rely on invasive probes to stimulate and detect activity, bearing the risk of inducing damage in the target system. In recent years, a new type of biosensor based on color centers in diamond offers the possibility to passively, noninvasively sense and image living biological systems. Here, we use such a sensor for the \textit{in-vitro} recording of the local magnetic field generated by tightly focused, high intensity pulsed laser optogenetic neuromuscular stimulation of the extensor digitorum longus muscles. Recordings captured a compound action potential response and a slow signal component which we seek to explain using a detailed model of the biological system. We show that our sensor is capable of recording localized neuromuscular activity from the laser stimulation site without photovoltaic or fluorescence artifacts associated with alternative techniques. Our work represents an important step towards selective induction of localized neurobiological activity while performing passive sensing and imaging with diamond sensors, motivating further research into mapping of neural activity and intra-cellular processes.

physics.bio-ph↗

arXiv2021

Nanometers-thick Ferromagnetic Surface Produced by Laser Cutting of Diamond

In this work, we demonstrate that cutting diamond crystals with a laser (532~nm wavelength, 0.5~mJ energy, 200~ns pulse duration at 15~kHz) produces a $\lesssim 20~$nm thick surface layer with magnetic order at room temperature. We have measured the magnetic moment of five natural and six CVD diamond crystals of different size, nitrogen content and surface orientations with a SQUID magnetometer. A robust ferromagnetic response at 300~K is observed only for crystals that were cut with the laser along the (100) surface orientation. The magnetic signals are much weaker for the (110) and negligible for the (111) orientations. We attribute the magnetic order to the disordered graphite layer produced by the laser at the diamond surface. The ferromagnetic signal vanished after chemical etching or after moderate temperature annealing. The obtained results indicate that laser treatment of diamond may pave the way to create ferromagnetic spots at its surface.

cond-mat.mtrl-sci↗

arXiv2021

Weak electron irradiation suppresses the anomalous magnetization of N-doped diamond crystals

Several diamond bulk crystals with a concentration of electrically neutral single substitutional nitrogen atoms of $\lesssim 80~$ppm, the so-called C- or P1-centres, were irradiated with electrons at 10 MeV energy and low fluence. The results show a complete suppression of the irreversible behavior in field and temperature of the magnetization below $\sim 30$~K, after a decrease of $\lesssim 40~$ppm in the concentration of C-centres produced by the electron irradiation. This result indicates that magnetic C-centres are at the origin of the large hysteretic behavior found recently in nitrogen-doped diamond crystals. This is remarkable because of the relatively low density of C-centres, stressing the extraordinary role of the C-centres in triggering those phenomena in diamond at relatively high temperatures. After annealing the samples at high temperatures in vacuum, the hysteretic behavior is partially recovered.

cond-mat.str-el↗

arXiv2021

Detection of single W-centers in silicon

Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge towards advanced quantum photonic devices prone to scalability. Research efforts have so far focused on extrinsic defects based on impurities incorporated inside the silicon lattice. Here we demonstrate the detection of single intrinsic defects in silicon, which are linked to a tri-interstitial complex called W-center, with a zero-phonon line at 1.218${\mu}$m. Investigating their single-photon emission properties reveals new information about this common radiation damage center, such as its dipolar orientation and its photophysics. We also identify its microscopic structure and show that although this defect does not feature electronic states in the bandgap, Coulomb interactions lead to excitonic radiative recombination below the silicon bandgap. These results could set the stage for numerous quantum perspectives based on intrinsic luminescent defects in silicon, such as quantum integrated photonics, quantum communications and quantum sensing.

quant-ph↗

arXiv2021

High speed microcircuit and synthetic biosignal widefield imaging using nitrogen vacancies in diamond

The ability to measure the passage of electrical current with high spatial and temporal resolution is vital for applications ranging from inspection of microscopic electronic circuits to biosensing. Being able to image such signals passively and remotely at the same time is of high importance, to measure without invasive disruption of the system under study or the signal itself. A new approach to achieve this utilises point defects in solid state materials, in particular nitrogen vacancy (NV) centres in diamond. Acting as a high density array of independent sensors, addressable opto-electronically and highly sensitive to factors including temperature and magnetic field, these are ideally suited to microscopic widefield imaging. In this work we demonstrate such imaging of signals from a microscopic lithographically patterned circuit at the micrometer scale. Using a new type of lock-in amplifier camera, we demonstrate sub-millisecond (up to 3500 frames-per-second) spatially resolved recovery of AC and pulsed electrical current signals, without aliasing or undersampling. Finally, we demonstrate as a proof of principle the recovery of synthetic signals replicating the exact form of signals in a biological neural network: the hippocampus of a mouse.

quant-ph↗

arXiv2021

Spectral emission dependence of tin-vacancy centers in diamond from thermal processing and chemical functionalization

We report a systematic photoluminescence (PL) investigation of the spectral emission properties of individual optical defects fabricated in diamond upon ion implantation and annealing. Three spectral lines at 620 nm, 631 nm, and 647 nm are identified and attributed to the SnV center due to their occurrence in the PL spectra of the very same single-photon emitting defects. We show that the relative occurrence of the three spectral features can be modified by oxidizing the sample surface following thermal annealing. We finally report the relevant emission properties of each class of individual emitters, including the excited state emission lifetime and the emission intensity saturation parameters.

quant-ph↗

arXiv2021

Spectral features of Pb-related color centers in diamond

We report on the systematic characterization of the optical properties of diamond color centers based on Pb impurities. An ensemble photoluminescence analysis of their spectral emission was performed at different excitation wavelengths in the 405-520 nm range and at different temperatures in the 4-300 K range. The series of observed spectral features consist of different emission lines associated with Pb-related defects. Finally, a room-temperature investigation of single-photon emitters under 490.5 nm laser excitation is reported, revealing different spectral signatures with respect to those already reported under 514 nm excitation. This work represents a substantial progress with respect to previous studies on Pb-related color centers, both in the attribution of an articulated series of spectral features and in the understanding of the formation process of this type of defect, thus clarifying the potential of this system for high-impact applications in quantum technologies.

quant-ph↗

arXiv2021

A cavity-based optical antenna for color centers in diamond

An efficient atom-photon-interface is a key requirement for the integration of solid-state emitters such as color centers in diamond into quantum technology applications. Just like other solid state emitters, however, their emission into free space is severely limited due to the high refractive index of the bulk host crystal. In this work, we present a planar optical antenna based on two silver mirrors coated on a thin single crystal diamond membrane, forming a planar Fabry-P\'erot cavity that improves the photon extraction from single tin vacancy (SnV) centers as well as their coupling to an excitation laser. Upon numerical optimization of the structure, we find theoretical enhancements in the collectible photon rate by a factor of 60 as compared to the bulk case. As a proof-of-principle demonstration, we fabricate single crystal diamond membranes with sub-$\mu$m thickness and create SnV centers by ion implantation. Employing off-resonant excitation, we show a 6-fold enhancement of the collectible photon rate, yielding up to half a million photons per second from a single SnV center. At the same time, we observe a significant reduction of the required excitation power in accordance with theory, demonstrating the functionality of the cavity as an optical antenna. Due to its planar design, the antenna simultaneously provides similar enhancements for a large number of emitters inside the membrane. Furthermore, the monolithic structure provides high mechanical stability and straightforwardly enables operation under cryogenic conditions as required in most spin-photon interface implementations.

quant-ph↗