Searcharxiv⌕ Search

arXiv subjects

Jaroslav Fabian

Publications and source records attributed to Jaroslav Fabian.

At least 163 records · Page 9Linked to original sources

Theory of the ac spin-valve effect

The spin-valve complex magnetoimpedance of symmetric ferromagnet/normal metal/ferromagnet junctions is investigated within the drift-diffusion (standard) model of spin injection. The ac magnetoresistance---the real part difference of the impedances of the parallel and antiparallel magnetization configurations---exhibits an overall damped oscillatory behavior, as an interplay of the diffusion and spin relaxation times. In wide junctions the ac magnetoresistance oscillates between positive and negative values, reflecting resonant amplification and depletion of the spin accumulation, while the line shape for thin tunnel junctions is predicted to be purely Lorentzian. The ac spin-valve effect could be a technique to extract spin transport and spin relaxation parameters in the absence of a magnetic field and for a fixed sample size.

cond-mat.other↗

Charge pumping by magnetization dynamics in magnetic and semi-magnetic tunnel junctions with interfacial Rashba or bulk extrinsic spin-orbit couplings

We develop a time-dependent nonequilibrium Green function (NEGF) approach to the problem of spin pumping by precessing magnetization in one of the ferromagnetic layers within F/I/F magnetic tunnel junctions (MTJs) or F/I/N semi-MTJs in the presence of intrinsic Rashba spin-orbit coupling (SOC) at the F/I interface or the extrinsic SOC in the bulk of F layers of finite thickness (F-ferromagnet; N-normal metal; I-insulating barrier). To express the time-averaged pumped charge current, or the corresponding dc voltage signal in open circuits that was measured in recent experiments on semi-MTJs [T. Moriyama et al., Phys. Rev. Lett. 100, 067602 (2008)], we construct a novel solution for the double-time-Fourier-transformed NEGFs. The two energy arguments of NEGFs in this representation are connected by the Floquet theorem describing multiphoton emission and absorption processes. Within this fully quantum-mechanical treatment of the conduction electrons, we find that: (i) only in the presence of the interfacial Rashba SOC the non-zero dc pumping voltage in F/I/N semi-MTJ can emerge at the adiabatic level (i.e., proportional to microwave frequency); (ii) a unique signature of this charge pumping phenomenon, which disappears if Rashba SOC is not located with the precessing F layer, is dc pumping voltage that changes sign as the function of the precession cone angle; (iii) unlike standard spin pumping in the absence of SOCs, where one emitted or absorbed microwave photon is sufficient to match the exact solution in the frame rotating with the magnetization, the presence of the Rashba SOC requires to take into account up to ten photons in order to reach the asymptotic value of pumped charge current; (iv) disorder within F/I/F MTJs can enhance the dc pumping voltage in the quasiballistic transport regime; ...

cond-mat.mes-hall↗

Theory of Single Electron Spin Relaxation in Si/SiGe Lateral Coupled Quantum Dots

We investigate the spin relaxation induced by acoustic phonons in the presence of spin-orbit interactions in single electron Si/SiGe lateral coupled quantum dots. The relaxation rates are computed numerically in single and double quantum dots, in in-plane and perpendicular magnetic fields. The deformation potential of acoustic phonons is taken into account for both transverse and longitudinal polarizations and their contributions to the total relaxation rate are discussed with respect to the dilatation and shear potential constants. We find that in single dots the spin relaxation rate scales approximately with the seventh power of the magnetic field, in line with a recent experiment. In double dots the relaxation rate is much more sensitive to the dot spectrum structure, as it is often dominated by a spin hot spot. The anisotropy of the spin-orbit interactions gives rise to easy passages, special directions of the magnetic field for which the relaxation is strongly suppressed. Quantitatively, the spin relaxation rates in Si are typically 2 orders of magnitude smaller than in GaAs due to the absence of the piezoelectric phonon potential and generally weaker spin-orbit interactions.

cond-mat.mes-hall↗

Spin-orbit coupling and anisotropic exchange in two-electron double quantum dots

The influence of the spin-orbit interactions on the energy spectrum of two-electron laterally coupled quantum dots is investigated. The effective Hamiltonian for a spin qubit pair proposed in F. Baruffa et al., Phys. Rev. Lett. 104, 126401 (2010) is confronted with exact numerical results in single and double quantum dots in zero and finite magnetic field. The anisotropic exchange Hamiltonian is found quantitatively reliable in double dots in general. There are two findings of particular practical importance: i) The model stays valid even for maximal possible interdot coupling (a single dot), due to the absence of a coupling to the nearest excited level, a fact following from the dot symmetry. ii) In a weak coupling regime, the Heitler-London approximation gives quantitatively correct anisotropic exchange parameters even in a finite magnetic field, although this method is known to fail for the isotropic exchange. The small discrepancy between the analytical model (which employes the linear Dresselhaus and Bychkov-Rashba spin-orbit terms) and the numerical data for GaAs quantum dots is found to be mostly due to the cubic Dresselhaus term.

cond-mat.mes-hall↗

Proposal for a ferromagnetic multiwell spin oscillator

The highly nonlinear coupling of transport and magnetic properties in a multiwell heterostructure, which comprises ferromagnetic quantum wells made of diluted magnetic semiconductors, is theoretically investigated. The interplay of resonant tunneling and carrier-mediated ferromagnetism in the magnetic wells induces very robust, self-sustained current and magnetization oscillations. Over a large window of steady bias voltages the spin polarization of the collector current is oscillating between positive and negative values, realizing a spin oscillator device.

cond-mat.mes-hall↗

Theory of anisotropic exchange in laterally coupled quantum dots

The effects of spin-orbit coupling on the two-electron spectra in lateral coupled quantum dots are investigated analytically and numerically. It is demonstrated that in the absence of magnetic field the exchange interaction is practically unaffected by spin-orbit coupling, for any interdot coupling, boosting prospects for spin-based quantum computing. The anisotropic exchange appears at finite magnetic fields. A numerically accurate effective spin Hamiltonian for modeling spin-orbit-induced two-electron spin dynamics in the presence of magnetic field is proposed.

cond-mat.mes-hall↗

The standard model of spin injection

1 Introduction 2 Simple model of spin injection 3 Spin-polarized transport: concepts and definitions 4 The standard model of spin injection: F/N junction 5 Nonequilibrium resistance and spin bottleneck 6 Transparent and tunnel contacts, conductivity mismatch 7 Silsbee-Johnson spin-charge coupling 8 Spin injection in F/N/F junctions 9 Nonlocal spin-injection geometry: Johnson-Silsbee spin injection experiment

cond-mat.other↗

Optical orientation in bipolar spintronic devices

Optical orientation is a highly efficient tool for the generation of nonequilibrium spin polarization in semiconductors. Combined with spin-polarized transport it offers new functionalities for conventional electronic devices, such as pn junction bipolar diodes or transistors. In nominally nonmagnetic junctions optical orientation can provide a source for spin capacitance--the bias-dependent nonequilibrium spin accumulation--or for spin-polarized current in bipolar spin-polarized solar cells. In magnetic junctions, the nonequilibrium spin polarization generated by spin orientation in a proximity of an equilibrium magnetization gives rise to the spin-voltaic effect (a realization of the Silsbee-Johnson coupling), enabling efficient control of electrical properties such as the I-V characteristics of the junctions by magnetic and optical fields. This article reviews the main results of investigations of spin-polarized and magnetic pn junctions, from spin capacitance to the spin-voltaic effect.

cond-mat.other↗

Anisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: spin-orbit coupling in magnetic tunnel junctions

The effects of the spin-orbit interaction on the tunneling magnetoresistance of ferromagnet/semiconductor/normal metal tunnel junctions are investigated. Analytical expressions for the tunneling anisotropic magnetoresistance (TAMR) are derived within an approximation in which the dependence of the magnetoresistance on the magnetization orientation in the ferromagnet originates from the interference between Bychkov-Rashba and Dresselhaus spin-orbit couplings that appear at junction interfaces and in the tunneling region. We also investigate the transport properties of ferromagnet/semiconductor/ferromagnet tunnel junctions and show that in such structures the spin-orbit interaction leads not only to the TAMR effect but also to the anisotropy of the conventional tunneling magnetoresistance (TMR). The resulting anisotropic tunneling magnetoresistance (ATMR) depends on the absolute magnetization directions in the ferromagnets. Within the proposed model, depending on the magnetization directions in the ferromagnets, the interplay of Bychkov-Rashba and Dresselhaus spin-orbit couplings produces differences between the rates of transmitted and reflected spins at the ferromagnet/seminconductor interfaces, which results in an anisotropic local density of states at the Fermi surface and in the TAMR and ATMR effects. Model calculations for Fe/GaAs/Fe tunnel junctions are presented. Furthermore, based on rather general symmetry considerations, we deduce the form of the magnetoresistance dependence on the absolute orientations of the magnetizations in the ferromagnets.

cond-mat.mes-hall↗

Self-sustained magnetoelectric oscillations in magnetic resonant tunneling structures

The dynamic interplay of transport, electrostatic, and magnetic effects in the resonant tunneling through ferromagnetic quantum wells is theoretically investigated. It is shown that the carrier-mediated magnetic order in the ferromagnetic region not only induces, but also takes part in intrinsic, robust, and sustainable high-frequency current oscillations over a large window of nominally steady bias voltages. This phenomenon could spawn a new class of quantum electronic devices based on ferromagnetic semiconductors.

cond-mat.mes-hall↗

Control of electron spin and orbital resonance in quantum dots through spin-orbit interactions

Influence of resonant oscillating electromagnetic field on a single electron in coupled lateral quantum dots in the presence of phonon-induced relaxation and decoherence is investigated. Using symmetry arguments it is shown that spin and orbital resonance can be efficiently controlled by spin-orbit interactions. The control is possible due to the strong sensitivity of Rabi frequency to the dot configuration (orientation of the dot and a static magnetic field) as a result of the anisotropy of the spin-orbit interactions. The so called easy passage configuration is shown to be particularly suitable for magnetic manipulation of spin qubits, ensuring long spin relaxation time and protecting the spin qubit from electric field disturbances accompanying on-chip manipulations.

cond-mat.mes-hall↗

Bipolar spintronics: From spin injection to spin-controlled logic

An impressive success of spintronic applications has been typically realized in metal-based structures which utilize magnetoresistive effects for substantial improvements in the performance of computer hard drives and magnetic random access memories. Correspondingly, the theoretical understanding of spin-polarized transport is usually limited to a metallic regime in a linear response, which, while providing a good description for data storage and magnetic memory devices, is not sufficient for signal processing and digital logic. In contrast, much less is known about possible applications of semiconductor-based spintronics and spin-polarized transport in related structures which could utilize strong intrinsic nonlinearities in current-voltage characteristics to implement spin-based logic. Here we discuss the challenges for realizing a particular class of structures in semiconductor spintronics: our proposal for bipolar spintronic devices in which carriers of both polarities (electrons and holes) contribute to spin-charge coupling. We formulate the theoretical framework for bipolar spin-polarized transport, and describe several novel effects in two- and three-terminal structures which arise from the interplay between nonequilibrium spin and equilibrium magnetization.

cond-mat.other↗

Theory of digital magneto resistance in ferromagnetic resonant tunneling diodes

We propose a ferromagnetic spintronic system, which consists of two serial connected resonant tunneling diodes. One diode is nonmagnetic whereas the other comprises a ferromagnetic emitter and quantum well. Using a selfconsistent coherent transport model we show that the current-voltage characteristic of the ferromagnetic diode can be strongly modulated by changing the relative orientation of the magnetizations in the emitter and quantum well, respectively. By a continuous change of the relative magnetization angle the total resistance exhibits a discrete jump realizing digital magneto resistance. The interplay between the emitter's Fermi energy level and the relative magnetization orientations allows to tailor the current voltage characteristics of the ferromagnetic diode from ohmic to negative differential resistance regime at low voltages.

cond-mat.other↗

Proposal for a digital converter of analog magnetic signals

A device which converts analog magnetic signals directly into digital information is proposed. The device concept is based on the monostable-bistable transition logic element, which consists of two resonant tunneling diodes (load and driver) connected in series and employs the monostable to bistable working point transition of the circuit. Using a magnetic resonant tunneling diode as the driver allows to control the resulting working point of the bistable region by an external magnetic field leading either to high or low output voltage of the circuit, effectively realizing what could be called digital magnetoresistance.

cond-mat.mes-hall↗

Resonant Tunneling Magneto Resistance in Coupled Quantum Wells

A three barrier resonant tunneling structure in which the two quantum wells are formed by a dilute magnetic semiconductor material (ZnMnSe) with a giant Zeeman splitting of the conduction band is theoretically investigated. Self-consistent numerical simulations of the structure predict giant magnetocurrent in the resonant bias regime as well as significant current spin polarization for a considerable range of applied biases.

cond-mat.mes-hall↗

Orbital and spin relaxation in single and coupled quantum dots

Phonon-induced orbital and spin relaxation rates of single electron states in lateral single and double quantum dots are obtained numerically for realistic materials parameters. The rates are calculated as a function of magnetic field and interdot coupling, at various field and quantum dot orientations. It is found that orbital relaxation is due to deformation potential phonons at low magnetic fields, while piezoelectric phonons dominate the relaxation at high fields. Spin relaxation, which is dominated by piezoelectric phonons, in single quantum dots is highly anisotropic due to the interplay of the Bychkov-Rashba and Dresselhaus spin-orbit couplings. Orbital relaxation in double dots varies strongly with the interdot coupling due to the cyclotron effects on the tunneling energy. Spin relaxation in double dots has an additional anisotropy due to anisotropic spin hot spots which otherwise cause giant enhancement of the rate at useful magnetic fields and interdot couplings. Conditions for the absence of the spin hot spots in in-plane magnetic fields (easy passages) and perpendicular magnetic fields (weak passages) are formulated analytically for different growth directions of the underlying heterostructure. It is shown that easy passages disappear (spin hot spots reappear) if the double dot system loses symmetry by an xy-like perturbation.

cond-mat.mes-hall↗

Theory of phonon-induced spin relaxation in laterally coupled quantum dots

Phonon-induced spin relaxation in coupled lateral quantum dots in the presence of spin-orbit coupling is calculated. The calculation for single dots is consistent with experiment. Spin relaxation in double dots at useful interdot couplings is dominated by spin hot spots that are strongly anisotropic. Spin hot spots are ineffective for a diagonal crystallographic orientation of the dots with a transverse in-plane field. This geometry is proposed for spin-based quantum information processing.

cond-mat.mes-hall↗

Spin properties of single electron states in coupled quantum dots

Spin properties of single electron states in laterally coupled quantum dots in the presence of a perpendicular magnetic field are studied by exact numerical diagonalization. Dresselhaus (linear and cubic) and Bychkov-Rashba spin-orbit couplings are included in a realistic model of confined dots based on GaAs. Group theoretical classification of quantum states with and without spin orbit coupling is provided. Spin-orbit effects on the g-factor are rather weak. It is shown that the frequency of coherent oscillations (tunneling amplitude) in coupled dots is largely unaffected by spin-orbit effects due to symmetry requirements. The leading contributions to the frequency involves the cubic term of the Dresselhaus coupling. Spin-orbit coupling in the presence of magnetic field leads to a spin-dependent tunneling amplitude, and thus to the possibility of spin to charge conversion, namely spatial separation of spin by coherent oscillations in a uniform magnetic field. It is also shown that spin hot spots exist in coupled GaAs dots already at moderate magnetic fields, and that spin hot spots at zero magnetic field are due to the cubic Dresselhaus term only.

cond-mat.other↗