arXiv subjects

Javad Shabani

Publications and source records attributed to Javad Shabani.

At least 37 records · Page 2Linked to original sources

arXiv2025

Gatemonium: A Voltage-Tunable Fluxonium

We present a new style of fluxonium qubit, gatemonium, based on an all superconductorsemiconductor hybrid platform. The linear inductance is achieved using six hundred planar Al-InAs Josephson junctions (JJs) in series. By tuning the single junction with a gate voltage, we demonstrate electrostatic control of the effective Josephson energy, tuning the weight of the fictitious phase particle. One and two-tone spectroscopy of the gatemonium transitions further reveal details of the hybrid plasmon-fluxon spectrum. Accounting for the nonsinusoidal current-phase relation of the single junction, we fit the measured spectra to extract charging and inductive energies. We conduct time domain characterization of the plasmon modes in a second gatemonium device with different charging energy and JJ array inductance. We discuss future directions for this platform in gate voltage-tunable, high plasma frequency, enhanced impedance junction arrays, and enhanced coherence times for voltage tunable architectures.

cond-mat.mes-hall↗

arXiv2024

Molecular beam epitaxy growth of superconducting tantalum germanide

Developing new material platforms for use in superconductor-semiconductor hybrid structures is desirable due to limitations caused by intrinsic microwave losses present in commonly used III/V material systems. With the recent reports on tantalum superconducting qubits that show improvements over the Nb and Al counterparts, exploring Ta as an alternative superconductor in hybrid material systems is promising. Here, we study the growth of Ta on semiconducting Ge (001) substrates grown via molecular beam epitaxy. We show that at a growth temperature of 400$^{\circ}$C the Ta diffuses into the Ge matrix in a self-limiting nature resulting in smooth and abrupt surfaces and interfaces with roughness on the order of 3-7 Å as measured by atomic force microscopy and x-ray reflectivity. The films are found to be a mixture of Ta$_{5}$Ge$_{3}$ and TaGe$_{2}$ binary alloys and form a native oxide that seems to form a sharp interface with the underlying film. These films are superconducting with a $T_{C}\sim 1.8-2$K and $H_{C}^{\perp} \sim 1.88T$, $H_{C}^{\parallel} \sim 5.1T$. These results show this tantalum germanide film to be promising for future superconducting quantum information platforms.

cond-mat.mes-hall↗

arXiv2024

Machine learning analysis of structural data to predict electronic properties in near-surface InAs quantum wells

Semiconductor crosshatch patterns in thin film heterostructures form as a result of strain relaxation processes and dislocation pile-ups during growth of lattice mismatched materials. Due to their connection with the internal misfit dislocation network, these crosshatch patterns are a complex fingerprint of internal strain relaxation and growth anisotropy. Therefore, this mesoscopic fingerprint not only describes the residual strain state of a near-surface quantum well, but also could provide an indicator of the quality of electron transport through the material. Here, we present a method utilizing computer vision and machine learning to analyze AFM crosshatch patterns that exhibits this correlation. Our analysis reveals optimized electron transport for moderate values of $λ$ (crosshatch wavelength) and $ε$ (crosshatch height), roughly 1 $μ$m and 4 nm, respectively, that define the average waveform of the pattern. Simulated 2D AFM crosshatch patterns are used to train a machine learning model to correlate the crosshatch patterns to dislocation density. Furthermore, this model is used to evaluate the experimental AFM images and predict a dislocation density based on the crosshatch waveform. Predicted dislocation density, experimental AFM crosshatch data, and experimental transport characterization are used to train a final model to predict 2D electron gas mean free path. This model shows electron scattering is strongly correlated with elastic effects (e.g. dislocation scattering) below 200 nm $λ_{MFP}$.

cond-mat.mes-hall↗

arXiv2024

Microwave-Tunable Diode Effect in Asymmetric SQUIDs with Topological Josephson Junctions

In superconducting systems in which inversion and time-reversal symmetry are simultaneously broken the critical current for positive and negative current bias can be different. For superconducting systems formed by Josephson junctions (JJs) this effect is termed Josephson diode effect. In this work, we study the Josephson diode effect for a superconducting quantum interference device (SQUID) formed by a topological JJ with a 4$π$-periodic current-phase relationship and a topologically trivial JJ. We show how the fractional Josephson effect manifests in the Josephson diode effect with the application of a magnetic field and how tuning properties of the trivial SQUID arm can lead to diode polarity switching. We then investigate the AC response and show that the polarity of the diode effect can be tuned by varying the AC power and discuss differences between the AC diode effect of asymmetric SQUIDs with no topological JJ and SQUIDs in which one JJ is topological.

cond-mat.supr-con↗

arXiv2024

Progress in superconductor-semiconductor topological Josephson junctions

Majorana bound states (MBSs) are quasiparticles which are their own antiparticles. They are predicted to emerge as zero-energy modes localized at the boundary of a topological superconductor. No intrinsic topological superconductor is known to date. However, by interfacing conventional superconductors and semiconductors with strong spin--orbit coupling it is possible to create a system hosting topological states. Hence epitaxial superconductors and semiconductors have emerged as an attractive materials system with atomically sharp interfaces and broad flexibility in device fabrications incorporating Josephson junctions. We discuss the basics of topological superconductivity and provide insight on how to go beyond current state-of-the-art experiments. We argue that the ultimate success in realizing MBS physics requires the observation of non-Abelian braiding and fusion experiments.

cond-mat.mes-hall↗

arXiv2024

Microwave Signatures of Topological Superconductivity in Planar Josephson Junctions

Planar Josephson junctions provide a platform to host topological superconductivity which, through manipulating Majorana bound states (MBS), could enable fault-tolerant quantum computing. However, what constitutes experimental signatures of topological superconductivity and how MBS can be detected remains strongly debated. In addition to spurious effects that mimic MBS, there is a challenge to discern the inherent topological signals in realistic systems with many topologically-trivial Andreev bound states, determining the transport properties of Josephson junctions. Guided by the advances in microwave spectroscopy, we theoretically study Al/InAs-based planar Josephson junction embedded into a radio-frequency superconducting quantum interference device to identify microwave signatures of topological superconductivity. Remarkably, by exploring the closing and reopening of a topological gap, we show that even in a wide planar Josephson junction with many Andreev bound states, such a topological signature is distinguishable in the resonance frequency shift of a microwave drive and the ``half-slope'' feature of the microwave absorption spectrum. Our findings provide an important step towards experimental detection of non-Abelian statistics and implementing scalable topological quantum computing.

cond-mat.mes-hall↗

arXiv2024

Microwave Andreev bound state spectroscopy in a semiconductor-based Planar Josephson junction

By coupling a semiconductor-based planar Josephson junction to a superconducting resonator, we investigate the Andreev bound states in the junction using dispersive readout techniques. Using electrostatic gating to create a narrow constriction in the junction, our measurements unveil a strong coupling interaction between the resonator and the Andreev bound states. This enables the mapping of isolated tunable Andreev bound states, with an observed transparency of up to 99.94\% along with an average induced superconducting gap of $\sim 150 μ$eV. Exploring the gate parameter space further elucidates a non-monotonic evolution of multiple Andreev bound states with varying gate voltage. Complimentary tight-binding calculations of an Al-InAs planar Josephson junction with strong Rashba spin-orbit coupling provide insight into possible mechanisms responsible for such behavior. Our findings highlight the subtleties of the Andreev spectrum of Josephson junctions fabricated on superconductor-semiconductor heterostructures and offering potential applications in probing topological states in these hybrid platforms.

cond-mat.mes-hall↗

arXiv2024

Beyond the standard model of topological Josephson junctions: From crystalline anisotropy to finite-size and diode effects

A planar Josephson junction is a versatile platform to realize topological superconductivity over a large parameter space and host Majorana bound states. With a change in Zeeman field, this system undergoes a transition from trivial to topological superconductivity accompanied by a jump in the superconducting phase difference between the two superconductors. A standard model of these Josephson junctions, which can be fabricated to have a nearly perfect interfacial transparency, predicts a simple universal behavior. In that model, at the same value of Zeeman field for the topological transition, there is a $π$ phase jump and a minimum in the critical superconducting current, while applying a controllable phase difference yields a diamond-shaped topological region as a function of that phase difference and a Zeeman field. In contrast, even for a perfect interfacial transparency, we find a much richer and nonuniversal behavior as the width of the superconductor is varied or the Dresselhaus spin-orbit coupling is considered. The Zeeman field for the phase jump, not necessarily $π$, is different from the value for the minimum critical current, while there is a strong deviation from the diamond-like topological region. These Josephson junctions show a striking example of a nonreciprocal transport and superconducting diode effect, revealing the importance of our findings not only for topological superconductivity and fault-tolerant quantum computing, but also for superconducting spintronics.

cond-mat.mes-hall↗

arXiv2024

Superconducting Diode Effect Sign Change in Epitaxial Al-InAs Josepshon Junctions

There has recently been a surge of interest in studying the superconducting diode effect (SDE) partly due to the possibility of uncovering the intrinsic properties of a material system. A change of sign of the SDE at finite magnetic field has previously been attributed to different mechanisms. Here, we observe the SDE in epitaxial Al-InAs Josephson junctions with strong Rashba spin-orbit coupling (SOC). We show that this effect strongly depends on the orientation of the in-plane magnetic field. In the presence of a strong magnetic field, we observe a change of sign in the SDE. Simulation and measurement of supercurrent suggest that depending on the superconducting widths, $W_\text{S}$, this sign change may not necessarily be related to 0--$π$ or topological transitions. We find that the strongest sign change in junctions with narrow $W_\text{S}$ is consistent with SOC-induced asymmetry of the critical current under magnetic-field inversion, while in wider $W_\text{S}$, the sign reversal could be related to 0--$π$ transitions and topological superconductivity.

cond-mat.mes-hall↗

arXiv2024

Characterizing losses in InAs two-dimensional electron gas-based gatemon qubits

The tunnelling of cooper pairs across a Josephson junction (JJ) allow for the nonlinear inductance necessary to construct superconducting qubits, amplifiers, and various other quantum circuits. An alternative approach using hybrid superconductor-semiconductor JJs can enable superconducting qubit architectures with all electric control. Here we present continuous-wave and time-domain characterization of gatemon qubits and coplanar waveguide resonators based on an InAs two-dimensional electron gas. We show that the qubit undergoes a vacuum Rabi splitting with a readout cavity and we drive coherent Rabi oscillations between the qubit ground and first excited states. We measure qubit relaxation times to be $T_1 =$ 100 ns over a 1.5 GHz tunable band. We detail the loss mechanisms present in these materials through a systematic study of the quality factors of coplanar waveguide resonators. While various loss mechanisms are present in III-V gatemon circuits we detail future directions in enhancing the relaxation times of qubit devices on this platform.

quant-ph↗

arXiv2023

Andreev reflection of quantum Hall states through a quantum point contact

We investigate the interplay between the quantum Hall (QH) effect and superconductivity in InAs surface quantum well (SQW)/NbTiN heterostructures using a quantum point contact (QPC). We use QPC to control the proximity of the edge states to the superconductor. By measuring the upstream and downstream resistances of the device, we investigate the efficiency of Andreev conversion at the InAs/NbTiN interface. Our experimental data is analyzed using the Landauer-Buttiker formalism, generalized to allow for Andreev reflection processes. We show that by varying the voltage of the QPC, $V_{QPC}$, the average Andreev reflection, $A$, at the QH-SC interface can be tuned from 50% to 10%. The evolution of $A$ with $V_{QPC}$ extracted from the measurements exhibits plateaus separated by regions for which $A$ varies continuously with $V_{QPC}$. The presence of plateaus suggests that for some ranges of $V_{QPC}$ the QPC might be pinching off almost completely from the QH-SC interface some of the edge modes. Our work shows a new experimental setup to control and advance the understanding of the complex interplay between superconductivity and QH effect in two-dimensional electron gas systems.

cond-mat.mes-hall↗

arXiv2023

Superconductivity in hyperdoped Ge by molecular beam epitaxy

Superconducting germanium films are an intriguing material for possible applications in fields such as cryogenic electronics and quantum bits. Recently, there has been great deal of progress in hyperdoping of Ga doped Ge using ion implantation. The thin film growths would be advantageous allowing homoepitaxy of doped and undoped Ge films opening possibilities for vertical Josephson junctions. Here, we present our studies on the growth of one layer of hyperdoped superconducting germanium thin film via molecular beam epitaxy. We observe a fragile superconducting phase which is extremely sensitive to processing conditions and can easily phase-segregate, forming a percolated network of pure gallium metal. By suppressing phase segregation through temperature control we find a superconducting phase that is unique and appears coherent to the underlying Ge substrate.

cond-mat.mes-hall↗

arXiv2023

Tunable Capacitor For Superconducting Qubits Using an InAs/InGaAs Heterostructure

Adoption of fast, parametric coupling elements has improved the performance of superconducting qubits, enabling recent demonstrations of quantum advantage in randomized sampling problems. The development of low loss, high contrast couplers is critical for scaling up these systems. We present a blueprint for a gate-tunable coupler realized with a two-dimensional electron gas in an InAs/InGaAs heterostructure. Rigorous numerical simulations of the semiconductor and high frequency electromagnetic behavior of the coupler and microwave circuitry yield an on/off ratio of more than one order of magnitude. We give an estimate of the dielectric-limited loss from the inclusion of the coupler in a two qubit system, with coupler coherences ranging from a few to tens of microseconds.

cond-mat.mes-hall↗

arXiv2023

Quasiparticle dynamics in epitaxial Al-InAs planar Josephson junctions

Quasiparticle (QP) effects play a significant role in the coherence and fidelity of superconducting quantum circuits. The Andreev bound states of high transparency Josephson junctions can act as low-energy traps for QPs, providing a mechanism for studying the dynamics and properties of both the QPs and the junction. We study the trapping and clearing of QPs from the Andreev bound states of epitaxial Al-InAs Josephson junctions incorporated in a superconducting quantum interference device (SQUID) galvanically shorting a superconducting resonator to ground. We use a neighboring voltage-biased Josephson junction to inject QPs into the circuit. Upon the injection of QPs, we show that we can trap and clear QPs when the SQUID is flux-biased. We examine effects of the microwave loss associated with bulk QP transport in the resonator, QP-related dissipation in the junction, and QP poisoning events. By monitoring the QP trapping and clearing in time, we study the dynamics of these processes and find a time-scale of few microseconds that is consistent with electron-phonon relaxation in our system and correlated QP trapping and clearing mechanisms. Our results highlight the QP trapping and clearing dynamics as well as the associated time-scales in high transparency Josephson junctions based fabricated on Al-InAs heterostructures.

cond-mat.mes-hall↗

arXiv2023

Voltage Activated Parametric Entangling Gates on Gatemons

We describe the generation of entangling gates on superconductor-semiconductor hybrid qubits by ac voltage modulation of the Josephson energy. Our numerical simulations demonstrate that the unitary error can be below $10^{-5}$ in a variety of 75-ns-long two-qubit gates (CZ, $i$SWAP, and $\sqrt{i\mathrm{SWAP}}$) implemented using parametric resonance. We analyze the conditional ZZ phase and demonstrate that the CZ gate needs no further phase correction steps, while the ZZ phase error in SWAP-type gates can be compensated by choosing pulse parameters. With decoherence considered, we estimate that qubit relaxation time needs to exceed $70μ\mathrm{s}$ to achieve the 99.9% fidelity threshold.

quant-ph↗

arXiv2023

Evolution of ${4π}$-periodic Supercurrent in the Presence of In-plane Magnetic Field

In the presence of a 4$π$-periodic contribution to the current phase relation, for example in topological Josephson junctions, odd Shapiro steps are expected to be missing. While missing odd Shapiro steps have been observed in several material systems and interpreted in the context of topological superconductivity, they have also been observed in topologically trivial junctions. Here, we study the evolution of such trivial missing odd Shapiro steps in Al-InAs junctions in the presence of an in-plane magnetic field $B^θ$. We find that the odd steps reappear at a crossover $B^θ$ value, exhibiting an in-plane field angle anisotropy that depends on spin-orbit coupling effects. We interpret this behavior by theoretically analyzing the Andreev bound state spectrum and the transitions induced by the non-adiabatic dynamics of the junction. Our results highlight the complex phenomenology of missing Shapiro steps and the underlying current phase relations in planar Josephson junctions designed to realize Majorana states.

cond-mat.mes-hall↗

arXiv2022

Oxygen vacancy-induced anomalous Hall effect in a nominally non-magnetic oxide

The anomalous Hall effect, a hallmark of broken time-reversal symmetry and spin-orbit coupling, is frequently observed in magnetically polarized systems. Its realization in non-magnetic systems, however, remains elusive. Here, we report on the observation of anomalous Hall effect in nominally non-magnetic KTaO3. Anomalous Hall effect emerges in reduced KTaO3 and shows an extrinsic to intrinsic crossover. A paramagnetic behavior is observed in reduced samples using first principles calculations and quantitative magnetometry. The observed anomalous Hall effect follows the oxygen vacancy-induced magnetization response, suggesting that the localized magnetic moments of the oxygen vacancies scatter conduction electrons asymmetrically and give rise to anomalous Hall effect. The anomalous Hall conductivity becomes insensitive to scattering rate in the low temperature limit (T<5 K), implying that the Berry curvature of the electrons on the Fermi surface controls the anomalous Hall effect. Our observations describe a detailed picture of many-body interactions, triggering anomalous Hall effect in a non-magnetic system.

cond-mat.mes-hall↗

arXiv2022

Superconducting resonators with voltage-controlled frequency and nonlinearity

Voltage-tunable superconductor-semiconductor devices offer a unique platform to realize dynamic tunability in superconducting quantum circuits. By galvanically connecting a gated InAs-Al Josephson junction to a coplanar waveguide resonator, we demonstrate the use of a wide-range gate-tunable superconducting element. We show that the resonant frequency is controlled via a gate-tunable Josephson inductance and that the non-linearity of the voltage-controlled InAs-Al junction is non-dissipative as is the case with conventional Al-AlO$_{x}$ junctions. As the gate voltage is decreased, the inductive participation of the junction increases up to $44\%$, resulting in the resonant frequency being tuned by over 2 GHz. Utilizing the wide tunability of the device, we demonstrate that two resonant modes can be adjusted such that they strongly hybridize, exhibiting an avoided level crossing with a coupling strength of 51 MHz. Implementing such voltage-tunable resonators is the first step toward realizing wafer-scale continuous voltage control in superconducting circuits for qubit-qubit coupling, quantum-limited amplifiers, and quantum memory platforms.

quant-ph↗