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Jayasimha Atulasimha

Publications and source records attributed to Jayasimha Atulasimha.

At least 37 records · Page 2Linked to original sources

Energy Efficient Learning with Low Resolution Stochastic Domain Wall Synapse Based Deep Neural Networks

We demonstrate that extremely low resolution quantized (nominally 5-state) synapses with large stochastic variations in Domain Wall (DW) position can be both energy efficient and achieve reasonably high testing accuracies compared to Deep Neural Networks (DNNs) of similar sizes using floating precision synaptic weights. Specifically, voltage controlled DW devices demonstrate stochastic behavior as modeled rigorously with micromagnetic simulations and can only encode limited states; however, they can be extremely energy efficient during both training and inference. We show that by implementing suitable modifications to the learning algorithms, we can address the stochastic behavior as well as mitigate the effect of their low-resolution to achieve high testing accuracies. In this study, we propose both in-situ and ex-situ training algorithms, based on modification of the algorithm proposed by Hubara et al. [1] which works well with quantization of synaptic weights. We train several 5-layer DNNs on MNIST dataset using 2-, 3- and 5-state DW device as synapse. For in-situ training, a separate high precision memory unit is adopted to preserve and accumulate the weight gradients, which are then quantized to program the low precision DW devices. Moreover, a sizeable noise tolerance margin is used during the training to address the intrinsic programming noise. For ex-situ training, a precursor DNN is first trained based on the characterized DW device model and a noise tolerance margin, which is similar to the in-situ training. Remarkably, for in-situ inference the energy dissipation to program the devices is only 13 pJ per inference given that the training is performed over the entire MNIST dataset for 10 epochs.

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Straintronics: Manipulating the Magnetization of Magnetostrictive Nanomagnets with Strain for Energy-Efficient Applications

The desire to perform information processing, computation, communication, signal generation and related tasks, while dissipating as little energy as possible, has inspired many ideas and paradigms. One of the most powerful among them is the notion of using magnetostrictive nanomagnets as the primitive units of the hardware platforms and manipulating their magnetizations with electrically generated static or time varying mechanical strain to elicit myriad functionalities. This approach has two advantages. First, information can be retained in the devices after powering off since the nanomagnets are non-volatile unlike charge-based devices such as transistors. Second, the energy expended to perform a given task is exceptionally low since it takes very little energy to alter magnetization states with strain. This field is now known as "straintronics", in analogy with electronics, spintronics, valleytronics, etc. We review the recent advances and trends in straintronics, including digital information processing (logic), information storage (memory), domain wall devices operated with strain, control of skyrmions with strain, non-Boolean computing and machine learning with straintronics, signal generation (microwave sources) and communication (ultra-miniaturized acoustic and electromagnetic antennas) implemented with strained nanomagnets, hybrid straintronics-magnonics, and interaction between phonons and magnons in straintronic systems. We identify key challenges and opportunities, and lay out pathways to advance this field to the point where it might become a mainstream technology for energy-efficient systems.

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Surface Acoustic Wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions

We show that a surface acoustic wave (SAW) applied across the terminals of a magnetic tunnel junction (MTJ) decreases both the (time-averaged) parallel and antiparallel resistances of the MTJ, with the latter decreasing much more than the former. This results in a decrease of the tunneling magnetoresistance (TMR) ratio. The coercivities of the free and fixed layer of the MTJ, however, are not affected significantly, suggesting that the SAW does not cause large-angle magnetization rotation in the magnetic layers through the inverse magnetostriction (Villari) effect at the power levels used. This study sheds light on the dynamical behavior of an MTJ under periodic compressive and tensile strain.

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Robust skyrmion mediated reversal of ferromagnetic nanodots of 20 nm lateral dimension with high Ms and moderate DMI

Implementation of skyrmion based energy efficient and high-density data storage devices requires aggressive scaling of skyrmion size. Ferrimagnetic materials are considered to be a suitable platform for this purpose due to their low saturation magnetization (i.e. smaller stray field). However, we show by performing rigorous micromagnetic simulation that such scaling of skyrmion size by lowering saturation magnetization while applicable in infinite films or where the skyrmion size is very small compared to the film's lateral dimension, does not hold in confined geometries. We also found in confined geometries, where skyrmion occupies the whole volume of a nanodot, high saturation magnetization helps form stable skyrmions. Specifically, such skyrmions can be formed in 20 nm lateral dimension nanodots with high saturation magnetization (1.6-1.71 MA/m) and moderate DMI (3 mJ/m2). This result could stimulate experiments on implementation of highly dense skyrmion devices. In particular, we show that Voltage Controlled Magnetic Anisotropy (VCMA) based switching mediated by an intermediate skyrmion state can be achieved in the soft layer of a ferromagnetic p-MTJ of lateral dimensions 20 nm with sub 1fJ/bit energy in the presence of room temperature thermal noise with reasonable DMI ~3 mJ/m2.

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Modeling of Thermal Magnetic Fluctuations in Nanoparticle Enhanced Magnetic Resonance Detection

We present a systematic numerical modeling investigation of magnetization dynamics and thermal magnetic moment fluctuations of single magnetic domain nanoparticles in a configuration applicable to enhancing inductive magnetic resonance detection signal to noise ratio (SNR). Previous proposals for oriented anisotropic single magnetic domain nanoparticle amplification of magnetic flux in MRI coil focused only on the coil pick-up voltage signal enhancement. Here we extend the analysis to the numerical evaluation of the SNR by modeling the inherent thermal magnetic noise introduced into the detection coil by the insertion of such anisotropic nanoparticle-filled coil core. We utilize the Landau-Lifshitz-Gilbert equation under the Stoner-Wohlfarth single magnetic domain (macrospin) assumption to simulate the magnetization dynamics in such nanoparticles due to AC drive field as well as thermal noise. These simulations are used to evaluate the nanoparticle configurations and shape effects on enhancing SNR. Finally, we explore the effect of narrow band filtering of the broadband magnetic moment thermal fluctuation noise on the SNR. Our results provide the impetus for relatively simple modifications to existing MRI systems for achieving enhanced detection SNR in scanners with modest polarizing magnetic fields.

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Voltage Controlled Energy Efficient Domain Wall Synapses with Stochastic Distribution of Quantized Weights in the Presence of Thermal Noise and Edge Roughness

We propose energy efficient strain control of domain wall (DW) in a perpendicularly magnetized nanoscale racetrack on a piezoelectric substrate that can implement multi state synapse to be utilized in neuromorphic computing platforms. In conjunction with SOT from to a current flowing in the heavy metal layer, strain is generated by applying a voltage across the piezoelectric. Such a strain is mechanically transferred to the racetrack and modulates the Perpendicular Magnetic Anisotropy (PMA). When different voltages are applied (i.e. different strains are generated), it can translate the DW to different distances for the same current which implements different synaptic weights. We have shown using micromagnetic simulations that 5-state and 3-state synapse can be implemented in a racetrack that is modeled with natural edge roughness and room temperature thermal noise. Such strain-controlled synapse has an energy consumption of few fJs and could thus be very attractive to implement energy-efficient quantized neural networks, which has been shown recently to achieve near equivalent classification accuracy to the full-precision neural networks.

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Acoustic Wave Induced FMR Assisted Spin-Torque Switching of Perpendicular MTJs with Anisotropy Variation

We have investigated Surface Acoustic Wave (SAW) induced ferromagnetic resonance (FMR) assisted Spin Transfer Torque (STT) switching of perpendicular MTJ (p-MTJ) with inhomogeneities using micromagnetic simulations that include the effect of thermal noise. With suitable frequency excitation, the SAW can induce ferromagnetic resonance in magnetostrictive materials, and the magnetization can precesses in a cone with high deflection from the perpendicular direction. With incorporation of inhomogeneity via lateral anisotropy variation as well as room temperature thermal noise, the magnetization precession in different gains can be significantly incoherent. Interestingly, the precession in different grains are found to be in phase, even though the precession amplitude (angle of deflection from the perpendicular direction) vary across grains of different anisotropy. Nevertheless, the high mean deflection angle can complement the STT switching by reducing the STT current significantly; even though the applied stress induced change in anisotropy is much lower than the total anisotropy barrier. This work indicates that SAW assisted switching can improve energy efficiency while being scalable to very small dimensions, which is technologically important for STT-RAM and elucidates the physical mechanism for the potential robustness of this paradigm in realistic scenarios with thermal noise and material inhomogeneity

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Dynamic Skyrmion-Mediated Switching of Perpendicular MTJs: Scaling to 20 nm with Thermal Noise

One method of creating and annihilating skyrmions in confined geometries is to use Voltage-Controlled Magnetic Anisotropy (VCMA) [1, 2, 3]. Previous study shows that robust voltage controlled ferromagnetic reversal from up to down state in the soft layer of a perpendicular Magnetic Tunnel Junction (p-MTJ) can be achieved by creating and subsequently annihilating an intermediate skyrmion state [4] in the presence of room temperature thermal noise and anisotropy variation across grains [4]. However, when scaling to 20 nm, thermal noise can annihilate the skyrmions, for example, by randomly moving the core towards the boundary of the nanostructure. In this work, we study three p-MTJs of different dimensions, particularly lateral dimensions of 100nm, 50nm and 20 nm and investigate the change in switching behavior as the dimension is decreased. Particularly, our focus is to investigate to what extent skyrmion mediated switching scheme can be employed below ~50nm lateral dimensions in the presence of thermal perturbation.

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Voltage control of domain walls in magnetic nanowires for energy efficient neuromorphic devices

An energy-efficient voltage controlled domain wall device for implementing an artificial neuron and synapse is analyzed using micromagnetic modeling in the presence of room temperature thermal noise. By controlling the domain wall motion utilizing spin transfer or spin orbit torques in association with voltage generated strain control of perpendicular magnetic anisotropy in the presence of Dzyaloshinskii-Moriya interaction, different positions of the domain wall are realized in the free layer of a magnetic tunnel junction to program different synaptic weights. The feasibility of scaling of such devices is assessed in the presence of thermal perturbations that compromise controllability. Additionally, an artificial neuron can be realized by combining this DW device with a CMOS buffer. This provides a possible pathway to realize energy efficient voltage controlled nanomagnetic deep neural networks that can learn in real time.

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Resonant Acoustic Wave Assisted Spin-Transfer-Torque Switching of Nanomagnets

We report the possibility of achieving an order of magnitude reduction in the energy dissipation needed to write bits in perpendicular magnetic tunnel junctions (p-MTJs) by simulating the magnetization dynamics under a combination of resonant surface acoustic waves (r-SAW) and spin-transfer-torque (STT). The magnetization dynamics were simulated using the Landau-Lifshitz-Gilbert equation under macrospin assumption with the inclusion of thermal noise. The resonant magnetization dynamics in the magnetostrictive nanomagnet build over few 10s of cycles of SAW application that drives the magnetization to precess in a cone with a deflection of ~45 degrees from the perpendicular direction. This reduces the STT current density required to switch the magnetization direction without increasing the STT application time or degrading the switching probability in the presence of room temperature thermal noise. This could lead to a pathway to achieve energy efficient switching of spin transfer torque random access memory (STTRAM) whose lateral dimensions can be scaled aggressively despite using materials with low magnetostriction by employing resonant excitation.

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Experimental creation and annihilation of nonvolatile magnetic skyrmions using voltage control of magnetic anisotropy without an external magnetic field

In this work, we utilize voltage controlled magnetic anisotropy (VCMA) to manipulate magnetic skyrmions that are fixed in space. Memory devices based on this strategy can potentially be of smaller footprint and better energy efficiency than current-controlled motion-based skyrmionic devices. To demonstrate VCMA induced manipulation of skyrmions, we fabricate antiferromagnet/ferromagnet/oxide heterostructure films where skyrmions can be stabilized without any external magnetic field due to the presence of exchange bias. These isolated skyrmions were annihilated by applying a voltage pulse that increased PMA. On the other hand, decreasing PMA promoted formation of more skyrmions. Furthermore, skyrmions can be created from chiral domains by increasing PMA of the system. To corroborate our experimental observations, we performed micromagnetic simulation. The proposed method could potentially lead to novel skyrmion-based memory devices.

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Magneto-elastic switching of magnetostrictive nanomagnets with in-plane shape anisotropy

We theoretically study the effect of a material defect (material void) on switching errors associated with magneto-elastic switching of magnetization in elliptical magnetostrictive nanomagnets having in-plane magnetic anisotropy. We find that the error probability increases significantly in the presence of the defect, indicating that magneto-elastic switching is particularly vulnerable to material imperfections. Curiously, there is a critical stress value that gives the lowest error probability in both defect-free and defective nanomagnets. The critical stress is much higher in defective nanomagnets than in defect-free ones. Since it is more difficult to generate the critical stress in small nanomagnets than in large nanomagnets (having the same energy barrier for thermal stability), it would be a challenge to downscale magneto-elastically switched nanomagnets in memory and other applications where reliable switching is required. This is likely to be further exacerbated by the presence of defects.

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Energy-efficient switching of nanomagnets for computing: Straintronics and other methodologies

The need for increasingly powerful computing hardware has spawned many ideas stipulating, primarily, the replacement of traditional transistors with alternate "switches" that dissipate miniscule amounts of energy when they switch and provide additional functionality that are beneficial for information processing. An interesting idea that has emerged recently is the notion of using two-phase (piezoelectric/magnetostrictive) multiferroic nanomagnets with bistable (or multi-stable) magnetization states to encode digital information (bits), and switching the magnetization between these states with small voltages (that strain the nanomagnets) to carry out digital information processing. The switching delay is ~1 ns and the energy dissipated in the switching operation can be few to tens of aJ, which is comparable to, or smaller than, the energy dissipated in switching a modern-day transistor. Unlike a transistor, a nanomagnet is "non-volatile", so a nanomagnetic processing unit can store the result of a computation locally without refresh cycles, thereby allowing it to double as both logic and memory. These dual-role elements promise new, robust, energy-efficient, high-speed computing and signal processing architectures (usually non-Boolean and often non-von-Neumann) that can be more powerful, architecturally superior (fewer circuit elements needed to implement a given function) and sometimes faster than their traditional transistor-based counterparts. This topical review covers the important advances in computing and information processing with nanomagnets with emphasis on strain-switched multiferroic nanomagnets acting as non-volatile and energy-efficient switches - a field known as "straintronics". It also outlines key challenges in straintronics.

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Resonate and Fire Neuron with Fixed Magnetic Skyrmions

In the brain, the membrane potential of many neurons oscillates in a subthreshold damped fashion and fire when excited by an input frequency that nearly equals their eigen frequency. In this work, we investigate theoretically the artificial implementation of such "resonate-and-fire" neurons by utilizing the magnetization dynamics of a fixed magnetic skyrmion in the free layer of a magnetic tunnel junction (MTJ). To realize firing of this nanomagnetic implementation of an artificial neuron, we propose to employ voltage control of magnetic anisotropy or voltage generated strain as an input (spike or sinusoidal) signal, which modulates the perpendicular magnetic anisotropy (PMA). This results in continual expansion and shrinking (i.e. breathing) of a skyrmion core that mimics the subthreshold oscillation. Any subsequent input pulse having an interval close to the breathing period or a sinusoidal input close to the eigen frequency drives the magnetization dynamics of the fixed skyrmion in a resonant manner. The time varying electrical resistance of the MTJ layer due to this resonant oscillation of the skyrmion core is used to drive a Complementary Metal Oxide Semiconductor (CMOS) buffer circuit, which produces spike outputs. By rigorous micromagnetic simulation, we investigate the interspike timing dependence and response to different excitatory and inhibitory incoming input pulses. Finally, we show that such resonate and fire neurons have potential application in coupled nanomagnetic oscillator based associative memory arrays.

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Polarized Neutron Reflectometry Study of Depth Dependent Magnetization Variation in Co Thin Film on a PMN-PT Substrate

We studied the depth dependent magnetization profile of the magnetostrictive Co thin film layer in a PMN-PT (011)/Ta/Co/Ta structure under both zero and nonzero applied electric field using polarized neutron reflectometry. Application of electric field across the PMN-PT substrate generates a strain, which rotates the magnetization of the Co layer consistent with the Villari effect. At low magnetic fields (near remanence and coercive field conditions), we find that the depth dependent magnetization profile is non-uniform, under both zero and nonzero applied electric fields. These variations are attributable to the depth dependent strain profile in the Co film, as determined by finite element analysis simulations.

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Magnetic Behaviour of Assemblies of Interacting Cobalt-Carbide Nanoparticles

Recent work [1] demonstrated high coercivity and magnetic moment in cobalt carbide nanoparticle assemblies and explained the high coercivity from first principles in terms of the high magnetocrystalline anisotropy of the cobalt carbide nanoparticles. In this work, we comprehensively model the interaction between the nanoparticles comprising the assembly and systematically understand the effect of particle size, distribution of the orientations of the nanoparticles' magnetocrystalline anisotropy axis with respect to the applied magnetic field, and dipole coupling between nanoparticles on the temperature dependent magnetic behavior of the nanoparticle assembly. We show that magnetocrystalline anisotropy alone is not enough to explain the large hysteresis over the 50K-400K temperature range and suggest that defects and inhomogeneties that pin the magnetization could also play a significant role on this temperature dependent magnetic behavior.

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Skyrmion mediated voltage controlled switching of ferromagnets for reliable and energy efficient 2-terminal memory

We propose a two terminal nanomagnetic memory element based on magnetization reversal of a perpendicularly magnetized nanomagnet employing a unipolar voltage pulse that modifies the perpendicular anisotropy of the system. Our work demonstrates that the presence of Dzyaloshinskii-Moriya Interaction (DMI) can create alternative route for magnetization reversal that obviates the need for utilizing precessional magnetization dynamics as well as a bias magnetic field that are employed in traditional voltage control of magnetic anisotropy (VCMA) based switching of perpendicular magnetization. We show with extensive micromagnetic simulation, in the presence of thermal noise, that the proposed skyrmion mediated VCMA switching mechanism is robust at room temperature leading to extremely low error switching while also being potentially 1-2 orders of magnitude more energy efficient than state of the art spin transfer torque (STT) based switching.

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Energy efficient and fast reversal of a fixed skyrmions with spin current assisted by voltage controlled magnetic anisotropy

Recent work [1,2] suggests that ferromagnetic reversal with spin transfer torque (STT) requires more current in a system in the presence of DMI than switching a typical ferromagnet of the same dimensions and perpendicular magnetic anisotropy (PMA). However, DMI promotes stabilization of skyrmions and we report that when the perpendicular anisotropy is modulated (reduced) for both the skyrmion and ferromagnet, it takes much smaller current to reverse the fixed skyrmion than to reverse the ferromagnet in the same time, or the skyrmion reverses much faster than the ferromagnet at similar levels of current. We show with rigorous micromagnetic simulations and energy portraits that the skyrmion switching proceeds along a different path at very low PMA which results in a significant reduction in the spin current required or time required for reversal. This can have potential for memory application where a relatively simple modification of the standard STT-RAM to include a heavy metal adjacent to the soft magnetic layer and with appropriate design of the tunnel barrier can lead to energy efficient and fast magnetic memory device based on the reversal of fixed skyrmions.

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