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Jayasimha Atulasimha

Publications and source records attributed to Jayasimha Atulasimha.

At least 55 records · Page 3Linked to original sources

Experimental demonstration of complete 180 degree reversal of magnetization in isolated Co-nanomagnets on a PMN-PT substrate with voltage generated strain

Rotating the magnetization of a shape anisotropic magnetostrictive nanomagnet with voltage-generated stress/strain dissipates much less energy than most other magnetization rotation schemes, but its application to writing bits in non-volatile magnetic memory has been hindered by the fundamental inability of stress/strain to rotate magnetization by full 180 degrees. Normally, stress/strain can rotate the magnetization of a shape anisotropic elliptical nanomagnet by only up to 90 degrees, resulting in incomplete magnetization reversal. Recently, we predicted that applying uniaxial stress sequentially along two different axes that are not collinear with the major or minor axis of the elliptical nanomagnet will rotate the magnetization by full 180 degrees. Here, we demonstrate this complete 180 degree rotation in elliptical Co-nanomagnets (fabricated on a piezoelectric substrate) at room temperature. The two stresses are generated by sequentially applying voltages to two pairs of shorted electrodes placed on the substrate such that the line joining the centers of the electrodes in one pair intersects the major axis of a nanomagnet at ~+30 degrees and the line joining the centers of the electrodes in the other pair intersects at ~ -30 degrees. A finite element analysis has been performed to determine the stress distribution underneath the nanomagnets when one or both pairs of electrodes are activated, and this has been approximately incorporated into a micromagnetic simulation of magnetization dynamics to confirm that the generated stress can produce the observed magnetization rotations. This result portends an extremely energy-efficient non-volatile "straintronic" memory technology predicated on writing bits in nanomagnets with electrically generated stress.

cond-mat.mes-hall↗

Image Processing with Dipole-Coupled Nanomagnets: Noise Suppression and Edge Enhancement Detection

Hardware based image processing offers speed and convenience not found in software-centric approaches. Here, we show theoretically that a two-dimensional periodic array of dipole-coupled elliptical nanomagnets, delineated on a piezoelectric substrate, can act as a dynamical system for specific image processing functions. Each nanomagnet has two stable magnetization states that encode pixel color (black or white). An image containing black and white pixels is first converted to voltage states and then mapped into the magnetization states of a nanomagnet array with magneto-tunneling junctions (MTJs). The same MTJs are employed to read out the processed pixel colors later. Dipole interaction between the nanomagnets implements specific image processing tasks such as noise reduction and edge enhancement detection. These functions are triggered by applying a global strain to the nanomagnets with a voltage dropped across the piezoelectric substrate. An image containing an arbitrary number of black and white pixels can be processed in few nanoseconds with very low energy cost.

cond-mat.dis-nn↗

Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology

Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel junctions (MTJ) on a Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) piezoelectric substrate with (001) orientation. It is found that the magnetic easy axis, switching field, and the tunnel magnetoresistance (TMR) of the MTJ can be efficiently controlled by strain from the underlying piezoelectric layer upon the application of a gate voltage. Repeatable voltage controlled MTJ toggling between high/low-resistance states is demonstrated. More importantly, instead of relying on the intrinsic anisotropy of the piezoelectric substrate to generate the required strain, we utilize anisotropic strain produced using local gating scheme, which is scalable and amenable to practical memory applications. Additionally, the adoption of crystalline MgO-based MTJ on piezoelectric layer lends itself to high TMR in the strain-mediated MRAM devices.

cond-mat.mes-hall↗

Geometry Effects in Switching of Nanomagnets with Strain: Reliability, Energy Dissipation and Clock Speed in Dipole-Coupled Nanomagnetic Logic

Strain-clocked dipole-coupled nanomagnetic logic is an energy-efficient Boolean logic paradigm whose progress has been stymied by its propensity for high error rates. In an effort to mitigate this problem, we have studied the effect of nanomagnet geometry on error rates, focusing on elliptical and cylindrical geometries. We had previously reported that the out-of-plane excursion of the magnetization vector during switching creates a precessional torque that is responsible for high switching error probability in elliptical nanomagnet geometries. The absence of this torque in cylindrical magnets portends lower error rates, but our simulations show that the error rate actually does not improve significantly compared to elliptical magnets while the switching becomes unacceptably slow. Here, we show that dipole coupled nanomagnetic logic can offer relatively high reliability (switching error probability < 10^-8), moderate clock speed (~ 100 MHz) and 2-3 orders of magnitude energy saving compared to CMOS devices, provided the shape anisotropy energy barrier of the magnet is increased to at least ~5.5 eV to allow engineering a stronger dipole coupling between neighboring nanomagnets.

cond-mat.mes-hall↗

Switching of Dipole Coupled Multiferroic Nanomagnets in the Presence of Thermal Noise: Reliability of Nanomagnetic Logic

The stress-induced switching behavior of a multiferroic nanomagnet, dipole coupled to a hard nanomagnet, is numerically studied by solving the stochastic Landau-Lifshitz-Gilbert (LLG) equation for a single domain macro-spin state. Different factors were found to affect the switching probability in the presence of thermal noise at room temperature: (i) dipole coupling strength, (ii) stress levels, and (iii) stress withdrawal rates (ramp rates). We report that the thermal broadening of the magnetization distribution causes large switching error rates. This could render nanomagnetic logic schemes that rely on dipole coupling to perform Boolean logic operations impractical whether they are clocked by stress or field or other means.

cond-mat.mes-hall↗

Magnetic Behavior of Superatom-Fullerene Assemblies

It has recently been possible to synthesize ordered assemblies composed of magnetic superatomic clusters Ni9Te6(PEt3)8 separated by C60 and study their magnetic behavior. We have carried out theoretical studies on model systems consisting of magnetic superatoms separated by non-magnetic species to examine the evolution in magnetic response as the nature of the magnetic superatom (directions of spin quantization), the strength of isotropic and anisotropic interactions, the magnetic anisotropy energy, and the size of the assembly are varied. We have examined square planar configurations consisting 16, 24 and 48 sites with 8, 12 and 24 magnetic superatoms respectively. The magnetic atoms are allowed 2 or 5 orientations. The model Hamiltonian includes isotropic exchange interactions with second nearest neighbor ferromagnetic and nearest neighbor antiferromagnetic couplings and anisotropic Dzyaloshinskii-Moriya interactions. It is shown that the inclusion of Dzyaloshinskii-Moriya interaction that cause spin canting is necessary to get qualitative response as observed in experiments.

cond-mat.mes-hall↗

Experimental demonstration of acoustic wave induced magnetization switching of dipole coupled magnetostrictive nanomagnets for ultralow power computing

We report nanomagnetic switching with Acoustic Waves (AW) launched from interdigitated electrodes that modulate the stress anisotropy of elliptical cobalt nanoscale magnetostrictive magnets (340 nm x 270 nm x 12 nm) delineated on 128 degree Y-cut lithium niobate. The dipole-coupled nanomagnet pairs are in a single-domain state and are initially magnetized along the major axis of the ellipse, with their magnetizations parallel to each other. The magnetizations of nanomagnets having lower shape anisotropy are reversed upon acoustic wave propagation. Thereafter, the magnetization of these nanomagnets remains in the reversed state and demonstrate non-volatility. This executes a 'NOT' operation. This proof of acoustic wave induced magnetic state reversal in dipole-coupled nanomagnets implementing a 'NOT' gate operation could potentially lead to the development of extremely energy-efficient nanomagnetic logic. Furthermore, fabrication complexity is reduced immensely due to the absence of individual contacts to the nanomagnets, leading to lower energy dissipation

cond-mat.mes-hall↗

Voltage controlled core reversal of fixed magnetic skyrmions without a magnetic field

Using micromagnetic simulations we demonstrate core reversal of a fixed magnetic skyrmion by modulating the perpendicular magnetic anisotropy of a nanomagnet with an electric field. We can switch reversibly between two skyrmion states and two ferromagnetic states, i.e. skyrmion states with the magnetization of the core pointing down/up and periphery pointing up/down, and ferromagnetic states with magnetization pointing up/down, by sequential increase and decrease of the perpendicular magnetic anisotropy. The switching between these states is explained by the fact that the spin texture corresponding to each of these stable states minimizes the sum of the magnetic anisotropy, demagnetization, Dzyaloshinskii-Moriya interaction (DMI) and exchange energies. This could lead to the possibility of energy efficient nanomagnetic memory and logic devices implemented with fixed skyrmions without using a magnetic field and without moving skyrmions with a current.

cond-mat.mes-hall↗

Switching the magnetization of magnetostrictive nanomagnets from single-domain to non-volatile vortex states with a surface acoustic wave

We report manipulation of the magnetic states of elliptical cobalt magnetostrictive nanomagnets (of nominal dimensions ~ 340 nm x 270 nm x 12 nm) delineated on bulk 128° Y-cut lithium niobate with Surface Acoustic Waves (SAWs) launched from interdigitated electrodes. Isolated nanomagnets that are initially magnetized to a single domain state with magnetization pointing along the major axis of the ellipse are driven into a vortex state by surface acoustic waves that modulate the stress anisotropy of these nanomagnets. The nanomagnets remain in the vortex state until they are reset by a strong magnetic field to the initial single domain state, making the vortex state non-volatile. This phenomenon is modeled and explained using a micromagnetic framework and could lead to the development of extremely energy efficient magnetization switching methodologies.

cond-mat.mes-hall↗

Incoherent magnetization dynamics in strain mediated switching of magnetostrictive nanomagnets

Micromagnetic studies of the magnetization change in magnetostrictive nanomagnets subjected to stress are performed for nanomagnets of different sizes. The interplay between demagnetization, exchange and stress anisotropy energies is used to explain the rich physics of size-dependent magnetization dynamics induced by modulating stress anisotropy in planar nanomagnets. These studies have important implications for strain mediated ultralow energy magnetization change in nanomagnets and its application in energy-efficient nanomagnetic computing systems.

cond-mat.mes-hall↗

Energy based stochastic model for temperature dependent behavior of ferromagnetic materials

An energy based stochastic model for temperature dependent anhysteretic magnetization curves of ferromagnetic materials is proposed and bench marked against experimental data. This is based on the calculation of macroscopic magnetic properties by performing an energy weighted average over all possible orientations of the magnetization vector. Most prior approaches that employ this method are unable to independently account for the effect of both inhomogeneity and temperature in performing the averaging necessary to model experimental data. Here we propose a way to account for both effects simultaneously and benchmark the model against experimental data from ~5K to ~300K for two different materials in both annealed (fewer inhomogeneities) and deformed (more inhomogeneities) samples. This demonstrates that the independent accounting for the effect of both inhomogeneity and temperature is necessary to correctly model temperature dependent magnetization behavior.

cond-mat.mtrl-sci↗

Modulating spin relaxation in nanowires with infrared light at room temperature

Spintronic devices usually rely on long spin relaxation times and/or lengths for optimum performance. Therefore, the ability to modulate these quantities with an external agent offers unique possibilities. The dominant spin relaxation mechanism in most technologically important semiconductors is the D'yakonov-Perel' (DP) mechanism which vanishes if the spin carriers (electrons) are confined to a single conduction subband in a quantum wire grown in certain crystallographic directions, or polycrystalline quantum wires. Here, we report modulating the DP spin relaxation rate (and hence the spin relaxation length) in self assembled 50-nm diameter InSb nanowires with infrared light at room temperature. In the dark, almost all the electrons in the nanowires are in the lowest conduction subband at room temperature, resulting in near-complete absence of DP relaxation. This allows observation of spin-sensitive effects in the magnetoresistance. Under infrared illumination, electrons are photoexcited to higher subbands and the DP spin relaxation mechanism is revived, leading to a three-fold decrease in the spin relaxation length. Consequently, the spin sensitive effects are no longer observable under illumination. This phenomenon may have applications in spintronic room-temperature infrared photodetection.

cond-mat.mes-hall↗

Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable, non-volatile, non-toggle, straintronic memory cell for extremely low energy operation

Reversible straintronic switching of a nanomagnet's magnetization between two stable or metastable states promises ultra-energy-efficient non-volatile memory. Here, we report strain-induced magnetization switching in ~300 nm sized FeGa nanomagnets delineated on a piezoelectric PMN-PT substrate. Voltage of one polarity applied across the substrate generates compressive strain in a nanomagnet and switches its magnetization to one state, while voltage of the opposite polarity generates tensile strain and switches the magnetization back to the original state, resulting in "non-toggle" switching. The two states can encode the two binary bits, and, using the right voltage polarity, one can write either bit deterministically.

cond-mat.mes-hall↗

Electric field control of magnetic states in isolated and dipole-coupled FeGa nanomagnets delineated on a PMN-PT substrate

We report observation of a "non-volatile" converse magneto-electric effect in elliptical FeGa nanomagnets delineated on a piezoelectric PMN-PT substrate. The nanomagnets are initially magnetized with a magnetic field directed along their nominal major axis and subsequent application of an electric field across the substrate generates strain in the substrate, which is partially transferred to the nanomagnets and rotates the magnetizations of some of them to metastable orientations. There they remain after the field is removed, resulting in "non-volatility". In isolated nanomagnets, the angular separation between the initial and final magnetization directions is < 90 deg, but in a dipole-coupled pair consisting of one "hard" and one "soft" nanomagnet, the soft nanomagnet's magnetization is rotated by > 90 deg from the initial orientation because of the dipole influence of the hard nanomagnet. These effects can be utilized for ultra-energy-efficient logic and memory devices.

cond-mat.mes-hall↗

Experimental Clocking of Nanomagnets with Strain for Ultra Low Power Boolean Logic

Nanomagnetic implementations of Boolean logic [1,2] have garnered attention because of their non-volatility and the potential for unprecedented energy-efficiency. Unfortunately, the large dissipative losses that take place when nanomagnets are switched with a magnetic field [3], or spin-transfer-torque [4] inhibit the promised energy-efficiency. Recently, there have been experimental reports of utilizing the Spin Hall effect for switching magnets [5-7], and theoretical proposals for strain induced switching of single-domain magnetostrictive nanomagnets [8-12], that might reduce the dissipative losses significantly. Here, we demonstrate, for the first time, that strain-induced switching of single-domain magnetostrictive nanomagnets of lateral dimensions ~200 nm fabricated on a piezoelectric substrate can implement a nanomagnetic Boolean NOT gate and unidirectional bit information propagation in dipole-coupled nanomagnets chains. This portends ultra-low-energy logic processors and mobile electronics that may be able to operate solely by harvesting energy from the environment without ever requiring a battery.

cond-mat.mes-hall↗

Magneto-elastic universal logic gate: A non-volatile, error-resilient Boolean logic gate with ultra-low energy-delay product

A long-standing goal of computer technology is to process and store digital information with the same device in order to implement new architectures. One way to accomplish this is to use nanomagnetic `non-volatile' logic gates that can perform Boolean operations and then store the output data in the magnetization states of nanomagnets, thereby doubling as both logic and memory. Unfortunately, many proposed nanomagnetic gates do not possess the seven essential characteristics of a Boolean logic gate: concatenability, non-linearity, isolation between input and output, gain, universal logic implementation, scalability and error resilience. More importantly, their energy-delay products and error-rates vastly exceed that of conventional transistor-based logic gates, which is a drawback. Here, we propose a non-volatile voltage-controlled nanomagnetic logic gate that possesses all the necessary characteristics of a logic gate and whose energy-delay product is ~2 orders of magnitude less than that of other nano-magnetic (non-volatile) logic gates and ~1 order of magnitude less than that of (volatile) CMOS-based logic gates. The error-resilience is also superior to that of other known nanomagnetic gates.

cond-mat.mes-hall↗

Self-similar Magneto-electric Nanocircuit Technology for Probabilistic Inference Engines

Probabilistic graphical models are powerful mathematical formalisms for machine learning and reasoning under uncertainty that are widely used for cognitive computing. However they cannot be employed efficiently for large problems (with variables in the order of 100K or larger) on conventional systems, due to inefficiencies resulting from layers of abstraction and separation of logic and memory in CMOS implementations. In this paper, we present a magneto-electric probabilistic technology framework for implementing probabilistic reasoning functions. The technology leverages Straintronic Magneto-Tunneling Junction (S-MTJ) devices in a novel mixed-signal circuit framework for direct computations on probabilities while enabling in-memory computations with persistence. Initial evaluations of the Bayesian likelihood estimation operation occurring during Bayesian Network inference indicate up to 127x lower area, 214x lower active power, and 70x lower latency compared to an equivalent 45nm CMOS Boolean implementation.

cs.ET↗

Energy-efficient hybrid spintronic-straintronic reconfigurable bit comparator

We propose a reconfigurable bit comparator implemented with a nanowire spin valve whose two contacts are magnetostrictive with bistable magnetization. Reference and input bits are "written" into the magnetization states of the two contacts with electrically generated strain and the spin-valve's resistance is lowered if they match. Multiple comparators can be interfaced in parallel with a magneto-tunneling junction to determine if an N-bit input stream matches an N-bit reference stream bit by bit. The system is robust against thermal noise at room temperature and a 16-bit comparator can operate at roughly 416 MHz while dissipating at most 420 aJ per cycle.

cond-mat.mes-hall↗