arXiv subjects
Publications and source records attributed to Jeff Chiles.
This roadmap consolidates recent advances while exploring emerging applications, reflecting the remarkable diversity of hardware platforms, neuromorphic concepts, and implementation philosophies reported in the field. It emphasizes the critical role of cross-disciplinary collaboration in this rapidly evolving field.
Superconducting optoelectronic hardware is being explored as a path towards artificial spiking neural networks with unprecedented scales of complexity and computational ability. Such hardware combines integrated-photonic components for few-photon, light-speed communication with superconducting circuits for fast, energy-efficient computation. Monolithic integration of superconducting and photonic devices is necessary for the scaling of this technology. In the present work, superconducting-nanowire single-photon detectors are monolithically integrated with Josephson junctions for the first time, enabling the realization of superconducting optoelectronic synapses. We present circuits that perform analog weighting and temporal leaky integration of single-photon presynaptic signals. Synaptic weighting is implemented in the electronic domain so that binary, single-photon communication can be maintained. Records of recent synaptic activity are locally stored as current in superconducting loops. Dendritic and neuronal nonlinearities are implemented with a second stage of Josephson circuitry. The hardware presents great design flexibility, with demonstrated synaptic time constants spanning four orders of magnitude (hundreds of nanoseconds to milliseconds). The synapses are responsive to presynaptic spike rates exceeding 10 MHz and consume approximately 33 aJ of dynamic power per synapse event before accounting for cooling. In addition to neuromorphic hardware, these circuits introduce new avenues towards realizing large-scale single-photon-detector arrays for diverse imaging, sensing, and quantum communication applications.
Superconducting nanowires, a mature technology originally developed for quantum sensing, can be used as a target and sensor with which to search for dark matter interactions with electrons. Here we report on a 180-hour measurement of a tungsten silicide superconducting nanowire device with a mass of 4.3 nanograms. We use this to place new constraints on dark matter--electron interactions, including the strongest terrestrial constraints to date on sub-MeV (sub-eV) dark matter that interacts with electrons via scattering (absorption) processes.
Uncovering the nature of dark matter is one of the most important goals of particle physics. Light bosonic particles, such as the dark photon, are well-motivated candidates: they are generally long-lived, weakly-interacting, and naturally produced in the early universe. In this work, we report on LAMPOST (Light $A'$ Multilayer Periodic Optical SNSPD Target), a proof-of-concept experiment searching for dark photon dark matter in the eV mass range, via coherent absorption in a multi-layer dielectric haloscope. Using a superconducting nanowire single-photon detector (SNSPD), we achieve efficient photon detection with a dark count rate (DCR) of $\sim 6\times10^{-6}$ counts/s. We find no evidence for dark photon dark matter in the mass range of $\sim 0.7$-$0.8$ eV with kinetic mixing $\epsilon \gtrsim 10^{-12}$, improving existing limits in $\epsilon$ by up to a factor of two. With future improvements to SNSPDs, our architecture could probe significant new parameter space for dark photon and axion dark matter in the meV to 10 eV mass range.
A subset of QuantISED Sensor PIs met virtually on May 26, 2020 to discuss a response to a charge by the DOE Office of High Energy Physics. In this document, we summarize the QuantISED sensor community discussion, including a consideration of HEP science enabled by quantum sensors, describing the distinction between Quantum 1.0 and Quantum 2.0, and discussing synergies/complementarity with the new DOE NQI centers and with research supported by other SC offices. Quantum 2.0 advances in sensor technology offer many opportunities and new approaches for HEP experiments. The DOE HEP QuantISED program could support a portfolio of small experiments based on these advances. QuantISED experiments could use sensor technologies that exemplify Quantum 2.0 breakthroughs. They would strive to achieve new HEP science results, while possibly spinning off other domain science applications or serving as pathfinders for future HEP science targets. QuantISED experiments should be led by a DOE laboratory, to take advantage of laboratory technical resources, infrastructure, and expertise in the safe and efficient construction, operation, and review of experiments. The QuantISED PIs emphasized that the quest for HEP science results under the QuantISED program is distinct from the ongoing DOE HEP programs on the energy, intensity, and cosmic frontiers. There is robust evidence for the existence of particles and phenomena beyond the Standard Model, including dark matter, dark energy, quantum gravity, and new physics responsible for neutrino masses, cosmic inflation, and the cosmic preference for matter over antimatter. Where is this physics and how do we find it? The QuantISED program can exploit new capabilities provided by quantum technology to probe these kinds of science questions in new ways and over a broader range of science parameters than can be achieved with conventional techniques.
We report on the fabrication and characterization of single-photon-sensitive WSi superconducting detectors with wire widths from 1 {\mu}m to 3 {\mu}m. The devices achieve saturated internal detection efficiency at 1.55 {\mu}m wavelength and exhibit maximum count rates in excess of 10^5 s^-1. We also investigate the material properties of the silicon-rich WSi films used for these devices. We find that many devices with active lengths of several hundred microns exhibit critical currents in excess of 50% of the depairing current. A meandered detector with 2.0 {\mu}m wire width is demonstrated over a surface area of 362x362 {\mu}m^2, showcasing the material and device quality achieved.
We demonstrate adiabatically tapered fibers terminating in sub-micron tips that are clad with a higher-index material for coupling to an on-chip waveguide. This cladding enables coupling to a high-index waveguide without losing light to the buried oxide. A technique to clad the tip of the tapered fiber with a higher-index polymer is introduced. Conventional tapered waveguides and forked tapered waveguide structures are investigated for coupling from the clad fiber to the on-chip waveguide. We find the forked waveguide facilitates alignment and packaging, while the conventional taper leads to higher bandwidth. The insertion loss from a fiber through a forked coupler to a sub-micron silicon nitride waveguide is 1.1 dB and the 3 dB-bandwidth is 90 nm. The coupling loss in the packaged device is 1.3 dB. With a fiber coupled to a conventional tapered waveguide, the loss is 1.4 dB with a 3 dB bandwidth extending beyond the range of the measurement apparatus, estimated to exceed 250 nm.
Nonlinear frequency conversion plays a crucial role in advancing the functionality of next-generation optical systems. Portable metrology references and quantum networks will demand highly efficient second-order nonlinear devices, and the intense nonlinear interactions of nanophotonic waveguides can be leveraged to meet these requirements. Here we demonstrate second harmonic generation (SHG) in GaAs-on-insulator waveguides with unprecedented efficiency of 40 W$^{-1}$ for a single-pass device. This result is achieved by minimizing the propagation loss and optimizing phase-matching. We investigate surface-state absorption and design the waveguide geometry for modal phase-matching with tolerance to fabrication variation. A 2.0 $\mu$m pump is converted to a 1.0 $\mu$m signal in a length of 2.9 mm with a wide signal bandwidth of 148 GHz. Tunable and efficient operation is demonstrated over a temperature range of 45 $^{\circ}$C with a slope of 0.24 nm/$^{\circ}$C. Wafer-bonding between GaAs and SiO$_2$ is optimized to minimize waveguide loss, and the devices are fabricated on 76 mm wafers with high uniformity. We expect this device to enable fully integrated self-referenced frequency combs and high-rate entangled photon pair generation.
We demonstrate a polarization rotator integrated at the output of a GaAs waveguide producing type I second harmonic generation (SHG). Form-birefringent phase matching between the pump fundamental transverse electric (TE) mode near 2.0 $\mu$m wavelength and the signal fundamental transverse magnetic (TM) mode efficiently generates light at 1.0 $\mu$m wavelength. A SiN waveguide layer is integrated with the SHG device to form a multi-functional photonic integrated circuit. The polarization rotator couples light between the two layers and rotates the polarization from TM to TE or from TE to TM. With a TE-polarized 2.0 $\mu$m pump, type I SHG is demonstrated with the signal rotated to TE polarization. Passive transmission near 1.0 $\mu$m wavelength shows ~80 % polarization rotation across a broad bandwidth of ~100 nm. By rotating the signal polarization to match that of the pump, this SHG device demonstrates a critical component of an integrated self-referenced octave-spanning frequency comb. This device is expected to provide crucial functionality as part of a fully integrated optical frequency synthesizer with resolution of less than one part in 10$^{14}$.
Nanophotonic waveguides with sub-wavelength mode confinement and engineered dispersion profiles are an excellent platform for application-tailored nonlinear optical interactions at low pulse energies. Here, we present fully air clad suspended-silicon waveguides for infrared frequency comb generation with optical bandwidth limited only by the silicon transparency. The achieved spectra are lithographically tailored to span 2.1 octaves in the mid-infrared (2.0-8.5 um or 1170--5000 cm-1) when pumped at 3.10 um with 100 pJ pulses. Novel fork-shaped couplers provide efficient input coupling with only 1.5 dB loss. The coherence, brightness, and the stability of the generated light are highlighted in a dual frequency comb setup in which individual comb-lines are resolved with 30 dB extinction ratio and 100 MHz spacing in the wavelength range of 4.8-8.5 um (2100-1170 cm-1). These sources are used for broadband gas- and liquid-phase dual-comb spectroscopy with 100 MHz comb-line resolution. We achieve a peak spectral signal-to-noise ratio of 10 Hz^0.5 across a simultaneous bandwidth containing 112,200 comb-lines. These results provide a pathway to further integration with the developing high repetition rate frequency comb lasers for compact sensors with applications in chip-based chemical analysis and spectroscopy.
The microscale integration of mid- and longwave-infrared photonics could enable the development of fieldable, robust chemical sensors, as well as highly efficient infrared frequency converters. However, such technology would be defined by the choice of material platform, which immediately determines the strength and types of optical nonlinearities available, the optical transparency window, modal confinement, and physical robustness. In this work, we demonstrate a new platform, suspended AlGaAs waveguides integrated on silicon, providing excellent performance in all of these metrics. We demonstrate low propagation losses within a span of nearly two octaves (1.26 to 4.6 $\mu$m) with exemplary performance of 0.45 dB/cm at $\lambda = 2.4$ $\mu$m. We exploit the high nonlinearity of this platform to demonstrate 1560 nm-pumped second-harmonic generation and octave-spanning supercontinuum reaching out to 2.3 $\mu$m with 3.4 pJ pump pulse energy. With mid-IR pumping, we generate supercontinuum spanning from 2.3 to 6.5 $\mu$m. Finally, we demonstrate the versatility of the platform with mid-infrared passive devices such as low-loss 10 $\mu$m-radius bends, compact power splitters with 96 $\pm$ 1% efficiency and edge couplers with 3.0 $\pm$ 0.1 dB loss. This platform has strong potential for multi-functional integrated photonic systems in the mid-IR.
Tremendous scientific progress has been achieved through the development of nonlinear integrated photonics. Prominent examples are Kerr-frequency-comb generation in micro-resonators, and supercontinuum generation and frequency conversion in nonlinear photonic waveguides. High conversion efficiency is enabling for applications of nonlinear optics, including such broad directions as high-speed optical signal processing, metrology, and quantum communication and computation. In this work, we demonstrate a gallium-arsenide-on-insulator (GaAs) platform for nonlinear photonics. GaAs has among the highest second- and third-order nonlinear optical coefficients, and use of a silica cladding results in waveguides with a large refractive index contrast and low propagation loss for expanded design of nonlinear processes. By harnessing these properties and developing nanofabrication with GaAs, we report a record normalized second-harmonic efficiency of 13,000% W-1cm-2 at a fundamental wavelength of 2 um. This work paves the way for high performance nonlinear photonic integrated circuits (PICs), which not only can transition advanced functionalities outside the lab through fundamentally reduced power consumption and footprint, but also enables future optical sources and detectors.
We design, fabricate and characterize integrated photonic routing manifolds with 10 inputs and 100 outputs using two vertically integrated planes of silicon nitride waveguides. We analyze manifolds via top-view camera imaging. This measurement technique allows the rapid acquisition of hundreds of precise transmission measurements. We demonstrate manifolds with uniform and Gaussian power distribution patterns with mean power output errors (averaged over 10 sets of 10 inputs) of 0.7 and 0.9 dB, respectively, establishing this as a viable architecture for precision light distribution on-chip. We also assess the performance of the passive photonic elements comprising the system via self-referenced test structures, including high-dynamic-range beam taps, waveguide cutback structures, and waveguide crossing arrays.
The design of neural hardware is informed by the prominence of differentiated processing and information integration in cognitive systems. The central role of communication leads to the principal assumption of the hardware platform: signals between neurons should be optical to enable fanout and communication with minimal delay. The requirement of energy efficiency leads to the utilization of superconducting detectors to receive single-photon signals. We discuss the potential of superconducting optoelectronic hardware to achieve the spatial and temporal information integration advantageous for cognitive processing, and we consider physical scaling limits based on light-speed communication. We introduce the superconducting optoelectronic neurons and networks that are the subject of the subsequent papers in this series.
Networks of superconducting optoelectronic neurons are investigated for their near-term technological potential and long-term physical limitations. Networks with short average path length, high clustering coefficient, and power-law degree distribution are designed using a growth model that assigns connections between new and existing nodes based on spatial distance as well as degree of existing nodes. The network construction algorithm is scalable to arbitrary levels of network hierarchy and achieves systems with fractal spatial properties and efficient wiring. By modeling the physical size of superconducting optoelectronic neurons, we calculate the area of these networks. A system with 8100 neurons and 330,430 total synapses will fit on a 1\,cm $\times$ 1\,cm die. Systems of millions of neurons with hundreds of millions of synapses will fit on a 300\,mm wafer. For multi-wafer assemblies, communication at light speed enables a neuronal pool the size of a large data center comprising 100 trillion neurons with coherent oscillations at 1\,MHz. Assuming a power law frequency distribution, as is necessary for self-organized criticality, we calculate the power consumption of the networks. We find the use of single photons for communication and superconducting circuits for computation leads to power density low enough to be cooled by liquid $^4$He for networks of any scale.
Optical communication achieves high fanout and short delay advantageous for information integration in neural systems. Superconducting detectors enable signaling with single photons for maximal energy efficiency. We present designs of superconducting optoelectronic neurons based on superconducting single-photon detectors, Josephson junctions, semiconductor light sources, and multi-planar dielectric waveguides. These circuits achieve complex synaptic and neuronal functions with high energy efficiency, leveraging the strengths of light for communication and superconducting electronics for computation. The neurons send few-photon signals to synaptic connections. These signals communicate neuronal firing events as well as update synaptic weights. Spike-timing-dependent plasticity is implemented with a single photon triggering each step of the process. Microscale light-emitting diodes and waveguide networks enable connectivity from a neuron to thousands of synaptic connections, and the use of light for communication enables synchronization of neurons across an area limited only by the distance light can travel within the period of a network oscillation. Experimentally, each of the requisite circuit elements has been demonstrated, yet a hardware platform combining them all has not been attempted. Compared to digital logic or quantum computing, device tolerances are relaxed. For this neural application, optical sources providing incoherent pulses with 10,000 photons produced with efficiency of 10$^{-3}$ operating at 20\,MHz at 4.2\,K are sufficient to enable a massively scalable neural computing platform with connectivity comparable to the brain and thirty thousand times higher speed.
We present a hybrid fiber/waveguide design for a 100-MHz frequency comb that is fully self-referenced and temperature controlled with less than 5 W of electrical power. Self-referencing is achieved by supercontinuum generation in a silicon nitride waveguide, which requires much lower pulse energies (~200 pJ) than with highly nonlinear fiber. These low-energy pulses are achieved with an erbium fiber oscillator/amplifier pumped by two 250-mW passively-cooled pump diodes that consume less than 5 W of electrical power. The temperature tuning of the oscillator, necessary to stabilize the repetition rate in the presence of environmental temperature changes, is achieved by resistive heating of a section of gold-palladium-coated fiber within the laser cavity. By heating only the small thermal mass of the fiber, the repetition rate is tuned over 4.2 kHz (corresponding to an effective temperature change of 4.2 {\deg}C) with a fast time constant of 0.5 s, at a low power consumption of 0.077 W/{\deg}C, compared to 2.5 W/{\deg}C in the conventional 200-MHz comb design.
We report and characterize low-temperature, plasma-deposited deuterated silicon nitride thin films for nonlinear integrated photonics. With a peak processing temperature less than 300$^\circ$C, it is back-end compatible with pre-processed CMOS substrates. We achieve microresonators with a quality factor of up to $1.6\times 10^6 $ at 1552 nm, and $>1.2\times 10^6$ throughout $\lambda$ = 1510 -- 1600 nm, without annealing or stress management. We then demonstrate the immediate utility of this platform in nonlinear photonics by generating a 1 THz free spectral range, 900-nm-bandwidth modulation-instability microresonator Kerr comb and octave-spanning, supercontinuum-broadened spectra.