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arXiv · 1802.01006

Deuterated silicon nitride photonic devices for broadband optical frequency comb generation

Jeff Chiles·Nima Nader·Daniel D. Hickstein·Su Peng Yu·Travis Crain Briles·David Carlson·Hojoong Jung·Jeffrey M. Shainline·Scott Diddams·Scott B. Papp·Sae Woo Nam·Richard P. Mirin
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Abstract

We report and characterize low-temperature, plasma-deposited deuterated silicon nitride thin films for nonlinear integrated photonics. With a peak processing temperature less than 300$^\circ$C, it is back-end compatible with pre-processed CMOS substrates. We achieve microresonators with a quality factor of up to $1.6\times 10^6 $ at 1552 nm, and $>1.2\times 10^6$ throughout $\lambda$ = 1510 -- 1600 nm, without annealing or stress management. We then demonstrate the immediate utility of this platform in nonlinear photonics by generating a 1 THz free spectral range, 900-nm-bandwidth modulation-instability microresonator Kerr comb and octave-spanning, supercontinuum-broadened spectra.

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Jeff Chiles, Nima Nader, Daniel D. Hickstein, Su Peng Yu, Travis Crain Briles, David Carlson, Hojoong Jung, Jeffrey M. Shainline, Scott Diddams, Scott B. Papp, Sae Woo Nam, Richard P. Mirin. 2018-02-03. Deuterated silicon nitride photonic devices for broadband optical frequency comb generation. https://doi.org/10.1364/ol.43.001527

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