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Jeffrey Ahlers

Publications and source records attributed to Jeffrey Ahlers.

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Creation of Depth-Confined, Shallow Nitrogen-Vacancy Centers in Diamond With Tunable Density

Engineering shallow nitrogen-vacancy (NV) centers in diamond holds the key to unlocking new advances in nanoscale quantum sensing. We find that the creation of near-surface NVs through delta doping during diamond growth allows for tunable control over both NV depth confinement (with a twofold improvement relative to low-energy ion implantation) and NV density, ultimately resulting in highly-sensitive single defects and ensembles with coherence limited by NV-NV interactions. Additionally, we demonstrate the utility of our shallow delta-doped NVs by imaging magnetism in few-layer CrSBr, a two-dimensional magnet. We anticipate that the control afforded by near-surface delta doping will enable new developments in NV quantum sensing from nanoscale NMR to entanglement-enhanced metrology.

quant-ph

Scalable, nanoscale positioning of highly coherent color centers in prefabricated diamond nanostructures

Nanophotonic devices in color center-containing hosts provide efficient readout, control, and entanglement of the embedded emitters. Yet control over color center formation - in number, position, and coherence - in nanophotonic devices remains a challenge to scalability. Here, we report a controlled creation of highly coherent diamond nitrogen-vacancy (NV) centers with nanoscale three-dimensional localization in prefabricated nanostructures with high yield. Combining nitrogen $δ$-doping during chemical vapor deposition diamond growth and localized electron irradiation, we form shallow NVs registered to the center of diamond nanopillars with wide tunability over NV number. We report positioning precision of ~ 4 nm in depth and 46(1) nm laterally in pillars (102(2) nm in bulk diamond). We reliably form single NV centers with long spin coherence times (average $T_2^{Hahn}$ = 98 $μs$) and 1.8x higher average photoluminescence compared to NV centers randomly positioned in pillars. We achieve a 3x improved yield of NV centers with single electron-spin sensitivity over conventional implantation-based methods. Our high-yield defect creation method will enable scalable production of solid-state defect sensors and processors.

quant-ph