arXiv subjects

Jeffrey Bokor

Publications and source records attributed to Jeffrey Bokor.

At least 19 recordsLinked to original sources

arXiv2023

Analysis of ultrafast magnetization switching dynamics in exchange-coupled ferromagnet-ferrimagnet heterostructures

Magnetization switching in ferromagnets has so far been limited to the current-induced spin-orbit-torque effects. Recent observation of helicity-independent all-optical magnetization switching in exchange-coupled ferromagnet ferrimagnet heterostructures expanded the range and applicability of such ultrafast heat-driven magnetization switching. Here we report the element-resolved switching dynamics of such an exchange-coupled system, using a modified microscopic three-temperature model. We have studied the effect of i) the Curie temperature of the ferromagnet, ii) ferrimagnet composition, iii) the long-range RKKY exchange-coupling strength, and iv) the absorbed optical energy on the element-specific time-resolved magnetization dynamics. The phase-space of magnetization illustrates how the RKKY coupling strength and the absorbed optical energy influence the switching time. Our analysis demonstrates that the threshold switching energy depends on the composition of the ferrimagnet and the switching time depends on the Curie temperature of the ferromagnet as well as RKKY coupling strength. This simulation anticipates new insights into developing faster and more energy-efficient spintronics devices.

cond-mat.mtrl-sci↗

arXiv2022

Optical Switching in Tb/Co-Multilayer Based Nanoscale Magnetic Tunnel Junctions

Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal by an ultrashort laser pulse is extremely important. We demonstrate optical switching of Tb/Comultilayer-based nanoscale MTJs by combining optical writing and electrical read-out methods. A 90 fs-long laser pulse switches the magnetization of the storage layer (SL). The change in magnetoresistance between the SL and a reference layer (RL) is probed electrically across the tunnel barrier. Single-shot switching is demonstrated by varying the cell diameter from 300 nm to 20 nm. The anisotropy, magnetostatic coupling, and switching probability exhibit cell-size dependence. By suitable association of laser fluence and magnetic field, successive commutation between high-resistance and low-resistance states is achieved. The switching dynamics in a continuous film is probed with the magneto-optical Kerr effect technique. Our experimental findings provide strong support for the growing interest in ultrafast spintronic devices.

physics.app-ph↗

arXiv2022

Picosecond Spin-Orbit Torque Induced Coherent Magnetization Switching in a Ferromagnet

Electrically controllable non-volatile magnetic memories show great potential for the replacement of semiconductor-based technologies. Recently there has been strong interest in spin-orbit torque (SOT) induced magnetization reversal due to the device's increased lifetime and speed of operation. However, recent SOT switching studies reveal an incubation delay in the ~ns range due to stochasticity in the nucleation of a magnetic domain during reversal. Here, we experimentally demonstrate ultrafast SOT-induced magnetization switching dynamics of a ferromagnet with no incubation delay by avoiding the nucleation process and driving the magnetization coherently. We employ an ultrafast photo-conducting switch and a co-planar strip line to generate and guide ~ps current pulses into the heavy metal/ferromagnet layer stack and induce ultrafast SOT. We use magneto-optical probing to investigate the magnetization switching dynamics with sub-picosecond time resolution. Depending on the relative current pulse and in-plane magnetic field polarities, we observe either an ultrafast demagnetization and subsequent recovery along with a SOT-induced precessional oscillation, or ultrafast SOT switching. The magnetization zero-crossing occurs in ~70 ps, which is approximately an order of magnitude faster than previous studies. Complete switching needs ~250 ps and is limited by the heat diffusion to the substrate. We use a macro-magnetic simulation coupled with an ultrafast heating model to analyze the effect of ultrafast thermal anisotropy torque and current-induced torque in the observed dynamics. Good agreement between our experimental results and the macro-spin model shows that the switching dynamics are coherent and present no noticeable incubation delay. Our work suggests a potential pathway toward dramatically increasing the writing speed of SOT magnetic random-access memory devices.

cond-mat.mes-hall↗

arXiv2022

Growth optimization and device integration of narrow-bandgap graphene nanoribbons

The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, we study the growth, characterization, and device integration of 5-atom wide armchair GNRs (5-AGNRs), which are expected to have an optimal band gap as active material in switching devices. 5-AGNRs are obtained via on-surface synthesis under ultra-high vacuum conditions from Br- and I-substituted precursors. We show that the use of I-substituted precursors and the optimization of the initial precursor coverage quintupled the average 5-AGNR length. This significant length increase allowed us to integrate 5-AGNRs into devices and to realize the first field-effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. Our study highlights that optimized growth protocols can successfully bridge between the sub-nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.

cond-mat.mtrl-sci↗

arXiv2022

Scaling and Statistics of Bottom-Up Synthesized Armchair Graphene Nanoribbon Transistors

Bottom-up assembled nanomaterials and nanostructures allow for the studies of rich and unprecedented quantum-related and mesoscopic transport phenomena. However, it can be difficult to quantify the correlations between the geometrical or structural parameters obtained from advanced microscopy and measured electrical characteristics when they are made into macroscopic devices. Here, we propose a strategy to connect the nanomaterial morphologies and the device performance through a Monte Carlo device model and apply it to understand the scaling trends of bottom-up synthesized armchair graphene nanoribbon (GNR) transistors. A new nanofabrication process is developed for GNR transistors with channel length down to 7 nm. The impacts of the GNR spatial distributions and the device geometries on the device performance are investigated systematically through comparison of experimental data with the model. Through this study, challenges and opportunities of transistor technologies based on bottom-up synthesized GNRs are pinpointed, paving the way to the further improvement of the GNR device performance for future transistor technology nodes.

cond-mat.mes-hall↗

arXiv2020

Picosecond Spin Orbit Torque Switching

Reducing energy dissipation while increasing speed in computation and memory is a long-standing challenge for spintronics research. In the last 20 years, femtosecond lasers have emerged as a tool to control the magnetization in specific magnetic materials at the picosecond timescale. However, the use of ultrafast optics in integrated circuits and memories would require a major paradigm shift. An ultrafast electrical control of the magnetization is far preferable for integrated systems. Here we demonstrate reliable and deterministic control of the out-of-plane magnetization of a 1 nm-thick Co layer with single 6 ps-wide electrical pulses that induce spin-orbit torques on the magnetization. We can monitor the ultrafast magnetization dynamics due to the spin-orbit torques on sub-picosecond timescales, thus far accessible only by numerical simulations. Due to the short duration of our pulses, we enter a counter-intuitive regime of switching where heat dissipation assists the reversal. Moreover, we estimate a low energy cost to switch the magnetization, projecting to below 1fJ for a (20 nm)^3 cell. These experiments prove that spintronic phenomena can be exploited on picosecond time-scales for full magnetic control and should launch a new regime of ultrafast spin torque studies and applications.

physics.app-ph↗

arXiv2020

Role of Element-Specific Damping on the Ultrafast, Helicity-Independent All-Optical Switching Dynamics in Amorphous (Gd,Tb)Co Thin Films

Ultrafast control of the magnetization in ps timescales by fs laser pulses offers an attractive avenue for applications such as fast magnetic devices for logic and memory. However, ultrafast helicity-independent all-optical switching (HI-AOS) of the magnetization has thus far only been observed in Gd-based, ferrimagnetic amorphous (\textit{a}-) rare earth-transition metal (\textit{a}-RE-TM) systems, and a comprehensive understanding of the reversal mechanism remains elusive. Here, we report HI-AOS in ferrimagnetic \textit{a}-Gd$_{22-x}$Tb$_x$Co$_{78}$ thin films, from x = 0 to x = 18, and elucidate the role of Gd in HI-AOS in \textit{a}-RE-TM alloys and multilayers. Increasing Tb content results in increasing perpendicular magnetic anisotropy and coercivity, without modifying magnetization density, and slower remagnetization rates and higher critical fluences for switching but still shows picosecond HI-AOS. Simulations of the atomistic spin dynamics based on the two-temperature model reproduce these results qualitatively and predict that the lower damping on the RE sublattice arising from the small spin-orbit coupling of Gd (with $L = 0$) is instrumental for the faster dynamics and lower critical fluences of the Gd-rich alloys. Annealing \textit{a}-Gd$_{10}$Tb$_{12}$Co$_{78}$ leads to slower dynamics which we argue is due to an increase in damping. These simulations strongly indicate that acounting for element-specific damping is crucial in understanding HI-AOS phenomena. The results suggest that engineering the element specific damping of materials can open up new classes of materials that exhibit low-energy, ultrafast HI-AOS.

cond-mat.mtrl-sci↗

arXiv2020

Unifying femtosecond and picosecond single-pulse magnetic switching in GdFeCo

Many questions are still open regarding the physical mechanisms behind the magnetic switching in GdFeCo alloys by single optical pulses. Phenomenological models suggest a femtosecond scale exchange relaxation between sublattice magnetization as the driving mechanism for switching. The recent observation of thermally induced switching in GdFeCo by using both several picosecond optical laser pulse as well as electric current pulses has questioned this previous understanding. This has raised the question of whether or not the same switching mechanics are acting at the femo- and picosecond scales. In this work, we aim at filling this gap in the understanding of the switching mechanisms behind thermal single-pulse switching. To that end, we have studied experimentally thermal single-pulse switching in GdFeCo alloys, for a wide range of system parameters, such as composition, laser power and pulse duration. We provide a quantitative description of the switching dynamics using atomistic spin dynamics methods with excellent agreement between the model and our experiments across a wide range of parameters and timescales, ranging from femtoseconds to picoseconds. Furthermore, we find distinct element-specific damping parameters as a key ingredient for switching with long picosecond pulses and argue, that switching with pulse durations as long as 15 picoseconds is possible due to a low damping constant of Gd. Our findings can be easily extended to speed up dynamics in other contexts where ferrimagnetic GdFeCo alloys have been already demonstrated to show fast and energy-efficient processes, e.g. domain-wall motion in a track and spin-orbit torque switching in spintronics devices.

cond-mat.mtrl-sci↗

arXiv2017

Single shot ultrafast all optical magnetization switching of ferromagnetic Co/Pt multilayers

In a number of recent experiments, it has been shown that femtosecond laser pulses can control magnetization on picosecond timescales, which is at least an order of magnitude faster compared to conventional magnetization dynamics. Among these demonstrations, one material system (GdFeCo ferromagnetic films) is particularly interesting, as deterministic toggle-switching of the magnetic order has been achieved without the need of any symmetry breaking magnetic field. This phenomenon is often referred to as all optical switching (AOS). However, so far, GdFeCo remains the only material system where such deterministic switching has been observed. When extended to ferromagnetic systems, which are of greater interest in many technological applications, only a partial effect can be achieved, which in turn requires repeated laser pulses for full switching. However, such repeated pulsing is not only energy hungry, it also negates the speed advantage of AOS. Motivated by this problem, we have developed a general method for single-shot, picosecond timescale, complete all optical switching of ferromagnetic materials. We demonstrate that in exchange-coupled layers of Co/Pt and GdFeCo, single shot, switching of the ferromagnetic Co/Pt layer is achieved within 7 picoseconds after irradiation by a femtosecond laser pulse. We believe that this approach will greatly expand the range of materials and applications for ultrafast magnetic switching.

cond-mat.mes-hall↗

arXiv2017

Ultrafast Magnetic Switching of GdFeCo with Electronic Heat Currents

We report the magnetic response of Au/GdFeCo bilayers to optical irradiation of the Au surface. For bilayers with Au thickness greater than 50 nm, the great majority of energy is absorbed by the Au electrons, creating an initial temperature differential of thousands of Kelvin between the Au and GdFeCo layers. The resulting electronic heat currents between the Au and GdFeCo layers last for several picoseconds with energy flux in excess of 2 TW m-2, and provide sufficient heating to the GdFeCo electrons to induce deterministic reversal of the magnetic moment.

cond-mat.mtrl-sci↗

arXiv2017

Electric Current Induced Ultrafast Demagnetization

We report the magnetic response of Co/Pt multilayers to picosecond electrical heating. Using photoconductive Auston switches, we generate electrical pulses with 5.5 picosecond duration and hundreds of pico-Joules to pass through Co/Pt multilayers. The electrical pulse heats the electrons in the Co/Pt multilayers and causes an ultrafast reduction in the magnetic moment. A comparison between optical and electrically induced demagnetization of the Co/Pt multilayers reveals significantly different dynamics for optical vs. electrical heating. We attribute the disparate dynamics to the dependence of the electron-phonon interaction on the average energy and total number of initially excited electrons.

cond-mat.mes-hall↗

arXiv2017

Negative Differential Resistance and Steep Switching in Chevron Graphene Nanoribbon Field Effect Transistors

Ballistic quantum transport calculations based on the non-equilbrium Green's function formalism show that field-effect transistor devices made from chevron-type graphene nanoribbons (CGNRs) could exhibit negative differential resistance with peak-to-valley ratios in excess of 4800 at room temperature as well as steep-slope switching with 6 mV/decade subtheshold swing over five orders of magnitude and ON-currents of 88$μ$A/$μ$m. This is enabled by the superlattice-like structure of these ribbons that have large periodic unit cells with regions of different effective bandgap, resulting in minibands and gaps in the density of states above the conduction band edge. The CGNR ribbon used in our proposed device has been previously fabricated with bottom-up chemical synthesis techniques and could be incorporated into an experimentally-realizable structure.

cond-mat.mes-hall↗

arXiv2017

Short-Channel Field Effect Transistors with 9-Atom and 13-Atom wide Graphene Nanoribbons

Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap of these GNRs have prevented the fabrication of devices with the desired performance and switching behaviour. Here, by fabricating short channel (Lch ~20 nm) devices with a thin, high-k gate dielectric and a 9-atom wide (0.95 nm) armchair GNR as the channel material, we demonstrate FETs with high on-current (Ion >1 uA at Vd = -1 V) and high Ion/Ioff ~10^5 at room temperature. We find that the performance of these devices is limited by tunnelling through the Schottky barrier (SB) at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high performance short-channel FETs with bottom-up synthesized armchair GNRs.

cond-mat.mes-hall↗

arXiv2016

Ultrafast Magnetization Reversal by Picosecond Electrical Pulses

The field of spintronics involves the study of both spin and charge transport in solid state devices with a view toward increasing their functionality and efficiency. Alternatively, the field of ultrafast magnetism focuses on the use of femtosecond laser pulses to excite electrons in magnetic materials, which allows the magnetic order to be dramatically changed on unprecedented sub-picosecond time-scales. Here, we unite these two distinct research activities by using picosecond electrical pulses to rapidly excite electrons in a magnetic metal. We are able to deterministically and repetitively reverse the magnetization of a GdFeCo film with sub-10 picosecond electrical pulses. The magnetization reverses in ~10ps, which is more than an order of magnitude faster than any other electrically controlled magnetic switching. We attribute the deterministic switching of the magnetization to ultrafast excitation of the electrons, a fundamentally different mechanism from other current driven switching mechanisms such as spin-transfer-torque (STT) or spin-orbit-torque (SOT). The energy density required for switching is measured and the process is found to be efficient, projecting to only 4 fJ needed to switch a (20 nm)^3 cell, which is comparable to other state-of-the-art STT-MRAM memory devices. This discovery will launch a new field of research into picosecond spintronic phenomena and devices.

cond-mat.mes-hall↗

arXiv2016

The role of electron and phonon temperatures in the helicity-independent all-optical switching of GdFeCo

Ultrafast optical heating of the electrons in ferrimagnetic metals can result in all-optical switching (AOS) of the magnetization. Here we report quantitative measurements of the temperature rise of GdFeCo thin films during helicity-independent AOS. Critical switching fluences are obtained as a function of the initial temperature of the sample and for laser pulse durations from 55 fs to 15 ps. We conclude that non-equilibrium phenomena are necessary for helicity-independent AOS, although the peak electron temperature does not play a critical role. Pump-probe time-resolved experiments show that the switching time increases as the pulse duration increases, with 10 ps pulses resulting in switching times of ~sim 13 ps. These results raise new questions about the fundamental mechanism of helicity-independent AOS.

cond-mat.mes-hall↗

arXiv2016

Electron-phonon interaction during optically induced ultrafast magnetization dynamics of Au/GdFeCo bilayers

The temperature evolution of GdFeCo electrons following optical heating plays a key role in all optical switching of GdFeCo and is primarily governed by the strength of coupling between electrons and phonons. Typically, the strength of electron-phonon coupling in a metal is deduced by monitoring changes in reflectance following optical heating and then analyzing the transient reflectance with a simple two-temperature thermal model. In a magnetic metal, the change in reflectance cannot be assumed to depend only the electron and phonon temperatures because a metal's reflectance also depends on the magnetization. To deduce the electron-phonon coupling constant in GdFeCo, we analyze thermal transport in Au and GdFeCo bilayers following optical heating of the GdFeCo electrons. We use the reflectance of the Au layer to monitor the temperature evolution of the Au phonons. By interpreting the response of the bilayer to heating with a thermal model, we determine the electron-phonon coupling constant in GdFeCo to be 6 x 10^17 W/(m^3-K) corresponding to an electron-phonon relaxation time in GdFeCo of ~150 fs.

cond-mat.mtrl-sci↗

arXiv2016

Model for multi-shot all-thermal all-optical switching in ferromagnets

All optical magnetic switching (AOS) is a recently observed rich and puzzling phenomenon that offers promis- ing technological applications. However, fundamental understanding of the underlying mechanisms remains elusive. Here we present a new model for multi-shot helicity-dependent AOS in ferromagnetic materials based on a purely heat-driven mechanism in the presence of Magnetic Circular Dichroism (MCD). We predict that AOS should be possible with as little as 0.5% of MCD, after a minimum number of laser shots. Finally, we re- produce previous AOS results by simulating the sweeping of a laser beam on an FePtC granular ferromagnetic film.

cond-mat.mes-hall↗

arXiv2015

Switching of Perpendicularly Polarized Nanomagnets with Spin Orbit Torque without an External Magnetic Field by Engineering a Tilted Anisotropy

Spin orbit torque (SOT) provides an efficient way of generating spin current that promises to significantly reduce the current required for switching nanomagnets. However, an in-plane current generated SOT cannot deterministically switch a perpendicularly polarized magnet due to symmetry reasons. On the other hand, perpendicularly polarized magnets are preferred over in-plane magnets for high-density data storage applications due to their significantly larger thermal stability in ultra-scaled dimensions. Here we show that it is possible switch a perpendicularly polarized magnet by SOT without needing an external magnetic field. This is accomplished by engineering an anisotropy in the magnets such that the magnetic easy axis slightly tilts away from the film-normal. Such a tilted anisotropy breaks the symmetry of the problem and makes it possible to switch the magnet deterministically. Using a simple Ta/CoFeB/MgO/Ta heterostructure, we demonstrate reversible switching of the magnetization by reversing the polarity of the applied current. This demonstration presents a new approach for controlling nanomagnets with spin orbit torque.

cond-mat.mtrl-sci↗