arXiv subjects

Jeffrey Bokor

Publications and source records attributed to Jeffrey Bokor.

25 records · Page 2Linked to original sources

arXiv2014

Sub-nanosecond signal propagation in anisotropy engineered nanomagnetic logic chains

Energy efficient nanomagnetic logic (NML) computing architectures propagate and process binary information by relying on dipolar field coupling to reorient closely-spaced nanoscale magnets. Signal propagation in nanomagnet chains of various sizes, shapes, and magnetic orientations has been previously characterized by static magnetic imaging experiments with low-speed adiabatic operation; however the mechanisms which determine the final state and their reproducibility over millions of cycles in high-speed operation (sub-ns time scale) have yet to be experimentally investigated. Monitoring NML operation at its ultimate intrinsic speed reveals features undetectable by conventional static imaging including individual nanomagnetic switching events and systematic error nucleation during signal propagation. Here, we present a new study of NML operation in a high speed regime at fast repetition rates. We perform direct imaging of digital signal propagation in permalloy nanomagnet chains with varying degrees of shape-engineered biaxial anisotropy using full-field magnetic soft x-ray transmission microscopy after applying single nanosecond magnetic field pulses. Further, we use time-resolved magnetic photo-emission electron microscopy to evaluate the sub-nanosecond dipolar coupling signal propagation dynamics in optimized chains with 100 ps time resolution as they are cycled with nanosecond field pulses at a rate of 3 MHz. An intrinsic switching time of 100 ps per magnet is observed. These experiments, and accompanying macro-spin and micromagnetic simulations, reveal the underlying physics of NML architectures repetitively operated on nanosecond timescales and identify relevant engineering parameters to optimize performance and reliability.

cond-mat.mes-hall↗

arXiv2014

Deterministic Domain Wall Motion Orthogonal To Current Flow Due To Spin Orbit Torque

Deterministic control of domain walls orthogonal to the direction of current flow is demonstrated by exploiting spin orbit torque in a perpendicularly polarized Ta/CoFeB/MgO multilayer in presence of an in-plane magnetic field. Notably, such orthogonal motion with respect to current flow is not possible from traditional spin transfer torque driven domain wall propagation even in presence of an external magnetic field. Reversing the polarity of either the current flow or the in-plane field is found to reverse the direction of the domain wall motion. From these measurements, which are unaffected by any conventional spin transfer torque by symmetry, we estimate the spin orbit torque efficiency of Ta to be 0.08.

cond-mat.mtrl-sci↗

arXiv2014

Speed and Reliability of Nanomagnetic Logic Technology

Nanomagnetic logic is an energy efficient computing architecture that relies on the dipole field coupling of neighboring magnets to transmit and process binary information. In this architecture, nanomagnet chains act as local interconnects. To assess the merits of this technology, the speed and reliability of magnetic signal transmission along these chains must be experimentally determined. In this work, time-resolved pump-probe x-ray photo-emission electron microscopy is used to observe magnetic signal transmission along a chain of nanomagnets. We resolve successive error-free switching events in a single nanomagnet chain at speeds on the order of 100 ps per nanomagnet, consistent with predictions based on micromagnetic modeling. Errors which disrupt transmission are also observed. We discuss the nature of these errors, and approaches for achieving reliable operation.

cond-mat.mes-hall↗

arXiv2013

Bottom-up Graphene Nanoribbon Field-Effect Transistors

Recently developed processes have enabled bottom-up chemical synthesis of graphene nanoribbons (GNRs) with precise atomic structure. These GNRs are ideal candidates for electronic devices because of their uniformity, extremely narrow width below 1 nm, atomically perfect edge structure, and desirable electronic properties. Here, we demonstrate nanoscale chemically synthesized GNR field-effect transistors, made possible by development of a new layer transfer process. We observe strong environmental sensitivity and unique transport behavior characteristic of sub-1nm width GNRs.

cond-mat.mtrl-sci↗

arXiv2009

Spin-dependent scattering in a silicon transistor

The scattering of conduction electrons off neutral donors depends sensitively on the relative orientation of their spin states. We present a theory of spin-dependent scattering in the two dimensional electron gas (2DEG) of field effect transistors. Our theory shows that the scattering mechanism is dominated by virtual transitions to negatively ionized donor levels. This effect translates into a source-drain current that always gets reduced when donor spins are at resonance with a strong microwave field. We propose a model for donor impurities interacting with conduction electrons in a silicon transistor, and compare our explicit numerical calculations to electrically detected magnetic resonance (EDMR) experiments. Remarkably, we show that EDMR is optimal for donors placed into a sweet spot located at a narrow depth window quite far from the 2DEG interface. This allows significant optimization of spin signal intensity for the minimal number of donors placed into the sweet spot, enabling the development of single spin readout devices. Our theory reveals an interesting dependence on conduction electron spin polarization p_c. As p_c increases upon spin injection, the EDMR amplitude first increases as p_{c}^{2}, and then saturates when a polarization threshold p_T is reached. These results show that it is possible to use EDMR as an in-situ probe of carrier spin polarization in silicon and other materials with weak spin-orbit coupling.

cond-mat.mes-hall↗

arXiv2008

Diameter-Dependent Electron Mobility of InAs Nanowires

Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V characterizations, the densities of thermally-activated fixed charges and trap states on the surface of untreated (i.e., without any surface functionalization) nanowires are investigated while enabling the accurate measurement of the gate oxide capacitance; therefore, leading to the direct assessment of the field-effect mobility for electrons. The field-effect mobility is found to monotonically decrease as the radius is reduced to sub-10 nm, with the low temperature transport data clearly highlighting the drastic impact of the surface roughness scattering on the mobility degradation for miniaturized nanowires. More generally, the approach presented here may serve as a versatile and powerful platform for in-depth characterization of nanoscale, electronic materials.

cond-mat.mtrl-sci↗

arXiv2008

Simulation Studies of Nanomagnet-Based Architecture

We report a simulation study on interacting ensembles of Co nanomagnets that can perform basic logic operations and propagate logic signals, where the state variable is the magnetization direction. Dipole field coupling between individual nanomagnets drives the logic functionality of the ensemble and coordinated arrangements of the nanomagnets allow for the logic signal to propagate in a predictable way. Problems with the integrity of the logic signal arising from instabilities in the constituent magnetizations are solved by introducing a biaxial anisotropy term to the Gibbs magnetic free energy of each nanomagnet. The enhanced stability allows for more complex components of a logic architecture capable of random combinatorial logic, including horizontal wires, vertical wires, junctions, fanout nodes, and a novel universal logic gate. Our simulations define the focus of scaling trends in nanomagnet-based logic and provide estimates of the energy dissipation and time per nanomagnet reversal.

cond-mat.mtrl-sci↗