arXiv subjects

Jelena Sjakste

Publications and source records attributed to Jelena Sjakste.

10 recordsLinked to original sources

arXiv2025

Plasmascopy of ultrafast hot charges in solids

We demonstrate an electric field-resolved approach for probing ultrafast dynamics of photoinjected charges in solids. Direct access to the electric field of few-cycle pulses enables us to measure a broadband response of a medium with associated plasma frequency. We prepare an ensemble of photoinjected hot charge carriers with energies sufficient to trigger impact ionization and establish a framework to measure its dynamics. Our study reveals the first time-resolved observation of the short-lived ultrafast impact ionization in germanium counteracted by trapping of mobile charges at later times. This approach provides a promising route for studying ultrafast many-body physics in photoexcited solids, with predictions from advanced theoretical models.

cond-mat.other↗

arXiv2025

Unraveling energy flow mechanisms in semiconductors by ultrafast spectroscopy: Germanium as a case study

Semiconductor materials are the foundation of modern electronics, and their functionality is dictated by the interactions between fundamental excitations occurring on (sub-)picosecond timescales. Using time-resolved Raman spectroscopy and transient reflectivity measurements, we shed light on the ultrafast dynamics in germanium. We observe an increase in the optical phonon temperature in the first few picoseconds, driven by the energy transfer from photoexcited holes, and the subsequent decay into acoustic phonons through anharmonic coupling. Moreover, the temperature, Raman frequency, and linewidth of this phonon mode show strikingly different decay dynamics. This difference was ascribed to the local thermal strain generated by the ultrafast excitation. We also observe Brillouin oscillations, given by a strain pulse traveling through germanium, whose damping is correlated to the optical phonon mode. These findings, supported by density functional theory and molecular dynamics simulations, provide a better understanding of the energy dissipation mechanisms in semiconductors.

cond-mat.mtrl-sci↗

arXiv2024

Occurrence of the collective Ziman limit of heat transport in cubic semiconductors: scattering channels and size effects

In this work, we discuss the possibility of reaching the Ziman conditions for collective heat transport in cubic bulk semiconductors, such as Si, Ge, AlAs and AlP. In natural and enriched silicon and germanium, the collective heat transport limit is impossible to reach due to strong isotopic scattering. However, we show that in hyperenriched silicon and germanium, as well as in materials with one single stable isotope like AlAs and AlP, at low temperatures, normal scattering plays an important role, making the observation of the collective heat transport possible. We further discuss the effects of sample sizes, and analyse our results for cubic materials by comparing them to bulk bismuth, in which second sound has been detected at cryogenic temperatures. We find that collective heat transport in cubic semiconductors studied in this work is expected to occur at temperatures between 10 and 20 K.

cond-mat.mtrl-sci↗

arXiv2023

Role of Dimensionality and Size in Controlloing the Drag Seebeck Coefficient of Doped Silicon Nanostructures: A Fundamental Understanding

In this theoretical study, we examine the influence of dimensionality, size reduction, and heat-transport direction on the phonon-drag contribution to the Seebeck coefficient of silicon nanostructures. Phonon-drag contribution, which arises from the momentum transfer between out-of-equilibrium phonon populations and charge carriers, significantly enhances the thermoelectric coefficient. Our implementation of the phonon drag term accounts for the anisotropy of nanostructures, such as thin films and nanowires, through the boundary- and momentum-resolved phonon lifetime. Our approach also takes into account the spin-orbit coupling which turns out to be crucial for hole transport. We reliably quantify the phonon drag contribution at various doping levels, temperatures, and nanostructure geometries for both electrons and holes in silicon nanostructures. Our results support the recent experimental findings, showing that a part of phonon drag contribution survives in 100 nm silicon nanostructures.

cond-mat.mtrl-sci↗

arXiv2023

EPIq : an open-source software for the calculation of electron-phonon interaction related properties

EPIq (Electron-Phonon wannier Interpolation over k and q-points) is an open-source software for the calculation of electron-phonon interaction related properties from first principles.Acting as a post-processing tool for a density-functional perturbation theory code ( Quantum ESPRESSO ) and wannier90, EPIq exploits the localization of the deformation potential in the Wannier function basis and the stationary properties of a force-constant functional with respect to the first-order perturbation of the electronic charge density to calculate many electron-phonon related properties with high accuracy and free from convergence issues related to Brillouin zone sampling. EPIq features includes: the adiabatic and non-adiabatic phonon dispersion, superconducting properties (including the superconducting band gap in the Migdal-Eliashberg formulation), double-resonant Raman spectra and lifetime of excited carriers. The possibility to customize most of its input makes EPIq a versatile and interoperable tool. Particularly relevant is the interaction with the Stochastic Self-Consistent Harmonic Approximation (SSCHA) allowing anharmonic effects to be included in the calculation of electron-properties. The scalability offered by the Wannier representation combined with a straightforward workflow and easy-to-read input and output files make EPIq accessible to the wide condensed matter and material science communities.

cond-mat.mtrl-sci↗

arXiv2022

When carbon impurities trigger the synthesis of alpha boron at high pressure and high temperature

The role of carbon in the formation of alpha boron at high pressure and high temperature (HPHT) has been investigated by combining HPHT experiments and density functional theory (DFT) calculations. Starting from beta rhombohedral or amorphous boron and amorphous carbon at 5 GPa, the alpha boron phase has been repeatedly observed between 1473 K and 2273 K, at temperatures that are much higher than those reported in the phase diagram of boron. The DFT investigation of the effect of carbon insertion into the alpha rhombohedral boron atomic structure on the formation enthalpy, volume and optical properties shows that only the (B11C) substituted icosahedron defect accounts for the slight volume contraction observed in α boron. It is also compatible with the observed red colour of α boron crystals, and consistently has a very low formation energy. Our calculations also provide a calibration tool to evaluate the carbon concentration in the samples. Finally, the synthesis temperature is found to be an easy means to tune the carbon concentration on demand.

cond-mat.mtrl-sci↗

arXiv2021

Boron carbide under torsional deformation: evidence of the formation of chain vacancies in the plastic regime

We report a combined experimental and theoretical study of boron carbide under stress/deformation. A special rotating anvil press, the rotating tomography Paris Edinburgh cell (RotoPEC), has been used to apply torsional deformation to boron carbide under a pressure of 5~GPa at ambient temperature. Subsequent damages and point defects have been analysed at ambient pressure by energy dispersive X-ray microdiffraction at the synchrotron and by Raman spectroscopy, combined with calculations based on the density functional theory (DFT). We show that apart from the signals due to B$_4$C, new peaks appear in both characterisation methods. The DFT calculations of atomic structures and phonon frequencies enable us to attribute most of the new peaks to boron vacancies in the intericosahedral chains of boron carbide. Some of the Raman spectra also show three peaks that have been attributed to amorphous boron carbide in the literature. Deformed boron carbide thus shows small inclusions of clusters of boron carbide with chain vacancies, and/or small zones interpreted as amorphous zones.

cond-mat.mtrl-sci↗

arXiv2018

Breakdown of Herring's processes in cubic semiconductors for sub-terahertz longitudinal acoustic phonons

In the present work we explain the anomalous behavior of the attenuation of the longitudinal acoustic phonon in GaAs as a function of the phonon energy $ω$ in the sub-THz domain. These attenuations along the [100] direction show a plateau between 0.6 and 1 GHz at low temperatures. We found an excellent agreement between measurements performed by some of us, and new \textit{ab initio} calculations of third-order anharmonic processes. The formation of the plateau is explained by the competition between different phonon-phonon scattering processes as Herring's mechanism, which dominates at low frequencies, saturates and disappears. The plateau is shown to be determined by the phononic final-state phase-space available at a given temperature. We predict that a change of scattering mechanism should also show up in the attenuation of silicon around 1.2-1.7 THz, and argue that the attenuation plateau is a general feature of cubic semiconductors.

cond-mat.mtrl-sci↗

arXiv2018

Ultrafast electrons dynamics reveal the high potential of InSe for hot carrier optoelectronics

We monitor the dynamics of hot carriers in InSe by means of two photons photoelectron spectroscopy (2PPE). The electrons excited by photons of 3.12 eV experience a manifold relaxation. First, they thermalize to the electronic states degenerate with the $\bar M$ valley. Subsequently, the electronic cooling is dictated by Fröhlich coupling with phonons of small momentum transfer. Ab-initio calculations predict cooling rates that are in good agreement with the observed dynamics. We argue that electrons accumulating in states degenerate with the $\bar M$ valley could travel through a multilayer flake of InSe with lateral size of 1 micrometer. The hot carriers pave a viable route to the realization of below-bandgap photodiodes and Gunn oscillators. Our results indicate that these technologies may find a natural implementation in future devices based on layered chalcogenides.

cond-mat.mtrl-sci↗

arXiv2018

Hydrodynamic heat transport regime in bismuth: a theoretical viewpoint

Bismuth is one of the rare materials in which second sound has been experimentally observed. Our exact calculations of thermal transport with the Boltzmann equation predict the occurrence of this Poiseuille phonon flow between $\approx$ 1.5 K and $\approx$ 3.5 K, in sample size of 3.86 mm and 9.06 mm, in consistency with the experimental observations. Hydrodynamic heat flow characteristics are given for any temperature: heat wave propagation length, drift velocity, Knudsen number. We discuss a Gedanken-experiment allowing to assess the presence of a hydrodynamic regime in any bulk material.

cond-mat.mtrl-sci↗