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arXiv · 1805.10464

Ultrafast electrons dynamics reveal the high potential of InSe for hot carrier optoelectronics

Zhesheng Chen·Christine Giorgetti·Jelena Sjakste·Raphael Cabouat·Valerie Veniard·Zailan Zhang·Amina Taleb-Ibrahimi·Evangelos Papalazarou·Marino Marsi·Abhay Shukla·Jacques Peretti·Luca Perfetti
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Abstract

We monitor the dynamics of hot carriers in InSe by means of two photons photoelectron spectroscopy (2PPE). The electrons excited by photons of 3.12 eV experience a manifold relaxation. First, they thermalize to the electronic states degenerate with the $\bar M$ valley. Subsequently, the electronic cooling is dictated by Fr\"ohlich coupling with phonons of small momentum transfer. Ab-initio calculations predict cooling rates that are in good agreement with the observed dynamics. We argue that electrons accumulating in states degenerate with the $\bar M$ valley could travel through a multilayer flake of InSe with lateral size of 1 micrometer. The hot carriers pave a viable route to the realization of below-bandgap photodiodes and Gunn oscillators. Our results indicate that these technologies may find a natural implementation in future devices based on layered chalcogenides.

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Zhesheng Chen, Christine Giorgetti, Jelena Sjakste, Raphael Cabouat, Valerie Veniard, Zailan Zhang, Amina Taleb-Ibrahimi, Evangelos Papalazarou, Marino Marsi, Abhay Shukla, Jacques Peretti, Luca Perfetti. 2018-05-26. Ultrafast electrons dynamics reveal the high potential of InSe for hot carrier optoelectronics. https://doi.org/10.1103/physrevb.97.241201

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