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Jen-Feng Hsu

Publications and source records attributed to Jen-Feng Hsu.

9 recordsLinked to original sources
arXiv2019

Reconfigurable edge-state engineering in graphene using LaAlO$_3$/SrTiO$_3$ nanostructures

The properties of graphene depend sensitively on doping with respect to the charge-neutrality point (CNP). Tuning the CNP usually requires electrical gating or chemical doping. Here, we describe a technique to reversibly control the CNP in graphene with nanoscale precision, utilizing LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterostructures and conductive atomic force microscope (c-AFM) lithography. The local electron density and resulting conductivity of the LAO/STO interface can be patterned with a conductive AFM tip, and placed within two nanometers of an active graphene device. The proximal LAO/STO nanostructures shift the position of graphene CNP by ~ $10^{12}$ cm$^{-2}$, and are also gateable. Here we use this effect to create reconfigurable edge states in graphene, which are probed using the quantum Hall effect. Quantized resistance plateaus at $h/e^2$ and $h/3e^2$ are observed in a split Hall device, demonstrating edge transport along the c-AFM written edge that depends on the polarity of both the magnetic field and direction of currents. This technique can be readily extended to other device geometries.

cond-mat.mes-hall↗
arXiv2018

Graphene-Complex-oxide Nanoscale Device Concepts

The integration of graphene with complex-oxide heterostructures such as LaAlO$_3$/SrTiO$_3$ offers the opportunity to combine the multifunctional properties of an oxide interface with the electronic properties of graphene. The ability to control interface conduction through graphene and understanding how it affects the intrinsic properties of an oxide interface are critical to the technological development of novel multifunctional devices. Here we demonstrate several device archetypes in which electron transport at an oxide interface is modulated using a patterned graphene top gate. Nanoscale devices are fabricated at the oxide interface by conductive atomic force microscope (c-AFM) lithography, and transport measurements are performed as a function of the graphene gate voltage. Experiments are performed with devices written adjacent to or directly underneath the graphene gate. Unique capabilities of this approach include the ability to create highly flexible device configurations, the ability to modulate carrier density at the oxide interface, and the ability to control electron transport up to the single-electron-tunneling regime, while maintaining intrinsic transport properties of the oxide interface. Our results facilitate the design of a variety of nanoscale devices that combine unique transport properties of these two intimately coupled two-dimensional electron systems.

cond-mat.mes-hall↗
arXiv2018

Cooling the Motion of a Silica Microsphere in a Magneto-Gravitational Trap in Ultra-High Vacuum

Levitated optomechanical systems, and particularly particles trapped in vacuum, provide unique platforms for studying the mechanical behavior of objects well-isolated from their environment. Ultimately, such systems may enable the study of fundamental questions in quantum mechanics, gravity, and other weak forces. While the optical trapping of nanoparticles has emerged as the prototypical levitated optomechanical system, it is not without problems due to the heating from the high optical intensity required, particularly when combined with a high vacuum environment. Here we investigate a magneto-gravitational trap in ultra-high vacuum. In contrast to optical trapping, we create an entirely passive trap for diamagnetic particles by utilizing the magnetic field generated by permanent magnets and the gravitational interaction. We demonstrate cooling the center of mass motion of a trapped silica microsphere from ambient temperature to an effective temperature near or below one milliKelvin in two degrees of freedom by optical feedback damping.

quant-ph↗
arXiv2016

Room-temperature quantum transport signatures in graphene/LaAlO3/SrTiO3 heterostructures

The pseudospin quantum degree of freedom is one of the most remarkable properties of graphene that distinguishes it from ordinary two-dimensional metals and semiconductors. Pseudospin quantum interference leads to weak antilocalization (WAL) and is influenced strongly by point defects and thermal perturbations that break chirality and destroy phase coherence. Preserving and manipulating quantum transport properties up to room temperature is key to realizing practical pseudospin-based graphene devices. Here we report fabrication and transport characterization of graphene field-effect devices on a complex-oxide heterostructure, LaAlO3/SrTiO3. Signatures of WAL, a consequence of pseudospin quantum interference, persist up to room temperature. The LaAlO3/SrTiO3 substrate plays a critical role in suppressing short-range impurity scattering and electron-phonon coupling. The observation of quantum transport signatures at room temperature is unique to this system and presents new opportunities for the development of pseudospin-based devices and novel multifunctional devices that couple to the complex-oxide interface.

cond-mat.mes-hall↗
arXiv2016

Method for Transferring High-Mobility CVD-Grown Graphene with Perfluoropolymers

The transfer of graphene grown by chemical vapor deposition (CVD) using amorphous polymers represents a widely implemented method for graphene-based electronic device fabrication. However, the most commonly used polymer, poly(methyl methacrylate) (PMMA), leaves a residue on the graphene that limits the mobility. Here we report a method for graphene transfer and patterning that employs a perfluoropolymer---Hyflon---as a transfer handle and to protect graphene against contamination from photoresists or other polymers. CVD-grown graphene transferred this way onto LaAlO$_3$/SrTiO$_3$ heterostructures is atomically clean, with high mobility (~30,000 cm$^2$V$^{-1}$s$^{-1}$) near the Dirac point at 2 K and clear, quantized Hall and magneto-resistance. Local control of the LaAlO$_3$/SrTiO$_3$ interfacial metal-insulator transition---through the graphene---is preserved with this transfer method. The use of perfluoropolymers such as Hyflon with CVD-grown graphene and other 2D materials can readily be implemented with other polymers or photoresists.

cond-mat.mtrl-sci↗
arXiv2016

Cooling the Motion of Diamond Nanocrystals in a Magneto-Gravitational Trap in High Vacuum

Levitated diamond nanocrystals with nitrogen-vacancy (NV) centres in high vacuum have been proposed as a unique system for experiments in fundamental quantum mechanics, including the generation of large quantum superposition states and tests of quantum gravity. This system promises extreme isolation from its environment while providing quantum control and sensing through the NV centre spin. While optical trapping has been the most explored method of levitation, recent results indicate that excessive optical heating of the nanodiamonds under vacuum may make the method impractical with currently available materials. Here, we study an alternative magneto-gravitational trap for diamagnetic particles, such as diamond nanocrystals, with stable levitation from atmospheric pressure to high vacuum. Magnetic field gradients from permanent magnets confine the particle in two dimensions, while confinement in the third dimension is gravitational. We demonstrate that feedback cooling of the centre-of-mass motion of a trapped nanodiamond cluster results in cooling of one degree of freedom to less than 1 K.

quant-ph↗
arXiv2015

Loading an Optical Trap with Diamond Nanocrystals Containing Nitrogen-Vacancy Centers from a Surface

We present a simple and effective method of loading particles into an optical trap in air at atmospheric pressure. Material which is highly absorptive at the trapping laser wavelength, such as tartrazine dye, is used as media to attach photoluminescent diamond nanocrystals. The mix is burnt into a cloud of air-borne particles as the material is swept near the trapping laser focus on a glass slide. Particles are then trapped with the laser used for burning or transferred to a second laser trap at a different wavelength. Evidence of successfully loading diamond nanocrystals into the trap presented includes high sensitivity of the photoluminecscence (PL) to an excitation laser at 520~nm wavelength and the PL spectra of the optically trapped particles. This method provides a convenient technique for the study of the nitrogen-vacancy (NV) centers contained in optically trapped diamond nanocrystals.

cond-mat.mes-hall↗
arXiv2008

Okubo-Zweig-Iizuka-rule violation and B\to η^{(\prime)}K branching ratios

We show that few-percent Okubo-Zweig-Iizuka-rule violating effects in the quark-flavor basis for the $η$-$η'$ mixing can enhance the chiral scale associated with the $η_q$ meson few times. This enhancement is sufficient for accommodating the dramatically different data of the $B\toη^{\prime} K$ and $B\toηK$ branching ratios. We comment on other proposals for resolving this problem, including flavor-singlet contributions, axial U(1) anomaly, and nonperturbative charming penguins. Discrimination of the above proposals by means of the $B\toη^{(\prime)}\ellν$ and $B_s\toη^{(\prime)}\ell\ell$ data is suggested.

hep-ph↗