arXiv subjects

Ji Feng

Publications and source records attributed to Ji Feng.

77 records · Page 5Linked to original sources

arXiv2013

Tailoring exciton dynamics by elastic strain-gradient in semiconductors

As device miniaturization approaches the atomic limit, it becomes highly desirable to exploit novel paradigms for tailoring electronic structures and carrier dynamics in materials. Elastic strain can in principle be applied to achieve reversible and fast control of such properties, but it remains a great challenge to create and utilize precisely controlled inhomogeneous deformation in semiconductors. Here, we take a combined experimental and theoretical approach to demonstrate that elastic strain-gradient can be created controllably and reversibly in ZnO micro/nanowires. In particular, we show that the inhomogeneous strain distribution creates an effective field that fundamentally alters the dynamics of the neutral excitons. As the basic principles behind these results are quite generic and applicable to most semiconductors, this work points to a novel route to a wide range of applications in electronics, optoelectronics, and photochemistry.

cond-mat.mtrl-sci↗

arXiv2013

Novel Two-dimensional Carbon Allotrope with Strong Electronic Anisotropy

Two novel two-dimensional carbon allotropes comprised of octagons and pentagons are proposed based on the first-principles calculations. The two carbon allotropes, named OPG-L and OPG-Z, are found to have distinct properties. OPG-L is metallic, while OPG-Z is a gapless semimetal. Remarkably, OPG-Z exhibits pronounced electronic anisotropy with highly anisotropic Dirac points at the Fermi level. A tight-binding model is suggested to describe the low-energy quasiparticles, which clarifies the origin of the anisotropic Dirac points. Such an anisotropic electronic characteristic of OPG-Z is expected to have wide implications in nano-electronics.

cond-mat.mtrl-sci↗

arXiv2012

Opposite Changes in Gap Width of Opposite Spin States Induced by Rashba Effect in Anti-ferromagnetic Graphene on Ni(111)

Graphene is a promising candidate for applications in spintronics. In this paper, Density Functional Theory method is used to calculate the band structure and magnetic properties of graphene on Ni(111). Our results show that once there is antiferromagnetic order in graphene, an external electric field at the order of 10^9 V/m can induce a gap width difference of tens of meV for opposite spin states near the Fermi surface.

cond-mat.mtrl-sci↗

arXiv2012

Coupling the valley degree of freedom to antiferromagnetic order

Conventional electronics are based invariably on the intrinsic degrees of freedom of an electron, namely, its charge and spin. The exploration of novel electronic degrees of freedom has important implications in both basic quantum physics and advanced information technology. Valley as a new electronic degree of freedom has received considerable attention in recent years. In this paper, we develop the theory of spin and valley physics of an antiferromagnetic honeycomb lattice. We show that by coupling the valley degree of freedom to antiferromagnetic order, there is an emergent electronic degree of freedom characterized by the product of spin and valley indices, which leads to spin-valley dependent optical selection rule and Berry curvature-induced topological quantum transport. These properties will enable optical polarization in the spin-valley space, and electrical detection/manipulation through the induced spin, valley and charge fluxes. The domain walls of an antiferromagnetic honeycomb lattice harbors valley-protected edge states that support spin-dependent transport. Finally, we employ first principles calculations to show that the proposed optoelectronic properties can be realized in antiferromagnetic manganese chalcogenophosphates (MnPX_3, X = S, Se) in monolayer form.

cond-mat.mtrl-sci↗

arXiv2011

MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect

A two-dimensional honeycomb lattice harbors a pair of inequivalent valleys in the k-space electronic structure, in the vicinities of the vertices of a hexagonal Brillouin zone, K}$_{\pm}$. It is particularly appealing to exploit this emergent degree of freedom of charge carriers, in what is termed "valleytronics", if charge carrier imbalance between the valleys can be achieved. The physics of valley polarization will make possible electronic devices such as valley filter and valley valve, and optoelectronic Hall devices, all very promising for next-generation electronic and optoelectronic applications. The key challenge lies with achieving valley imbalance, of which a convincing demonstration in a two-dimensional honeycomb structure remains evasive, while there are only a handful of examples for other materials. We show here, using first principles calculations, that monolayer MoS_2, a novel two-dimensional semiconductor with a 1.8 eV direct band gap, is an ideal material for valleytronics by valley- selective circular dichroism, with ensuing valley polarization and valley Hall effect.

cond-mat.mtrl-sci↗