arXiv subjects

Ji Ung Lee

Publications and source records attributed to Ji Ung Lee.

21 records · Page 2Linked to original sources

arXiv2015

Characterization of Magnetic Ni Clusters on Graphene Scaffold after High Vacuum Annealing

Magnetic Ni nanoclusters were synthesized by electron beam deposition utilizing CVD graphene as a scaffold. The subsequent clusters were subjected to high vacuum (5-8 x10-7 torr) annealing between 300 and 600 0C. The chemical stability, optical and morphological changes were characterized by X-ray photoemission microscopy, Raman spectroscopy, atomic force microscopy and magnetic measurement. Under ambient exposure, nickel nanoparticles was observed to be oxidized quickly, forming antiferromagnetic nickel oxide. Here, we report that the majority of the oxidized nickel is in non-stoichiometric form and can be reduced under high vacuum at temperature as low as 300 0C. Importantly, the resulting annealed clusters are relatively stable and no further oxidation was detectable after three weeks of air exposure at room temperature.

physics.chem-ph↗

arXiv2014

Ideal Graphene/Silicon Schottky Junction Diodes

The proper understanding of semiconductor devices begins at the metal-semiconductor interface. The metal/semiconductor interface itself can also be an important device, as Schottky junctions often forms when the doping in the semiconductors is low. Here, we extend the analysis of metal-silicon Schottky junctions by using graphene, an atomically thin semimetal. We show that a fundamentally new transport model is needed to describe the graphene-silicon Schottky junction. While the current-voltage behavior follows the celebrated ideal diode behavior, the details of the diode characteristics is best characterized by the Landauer transport formalism, suggesting that the injection rate from graphene ultimately determines the transport properties of this new Schottky junction.

cond-mat.mes-hall↗

arXiv2014

Reconfigurable p-n Junction Diodes and the Photovoltaic Effect in Exfoliated MoS2 Films

Realizing basic semiconductor devices such as p-n junctions are necessary for developing thin-film and optoelectronic technologies in emerging planar materials such as MoS2. In this work, electrostatic doping by buried gates is used to study the electronic and optoelectronic properties of p-n junctions in exfoliated MoS2 flakes. Creating a controllable doping gradient across the device leads to the observation of the photovoltaic effect in monolayer and bilayer MoS2 flakes. For thicker flakes, strong ambipolar conduction enables realization of fully reconfigurable p-n junction diodes with rectifying current-voltage characteristics, and diode ideality factors as low as 1.6. The spectral response of the photovoltaic effect shows signatures of the predicted band gap transitions. For the first excitonic transition, a shift of >4kBT is observed between monolayer and bulk devices, indicating a thickness-dependence of the excitonic coulomb interaction.

cond-mat.mes-hall↗