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Jian-Hao Chen

Publications and source records attributed to Jian-Hao Chen.

31 records · Page 2Linked to original sources

Berry Curvature Enhanced Nonlinear Photogalvanic Response of Type-II Weyl Cone

The experimental manifestation of topological effects in bulk materials under ambient conditions, especially those with practical applications, has attracted enormous research interest. Recent discovery of Weyl semimetal provides an ideal material platform for such endeavors. The Berry curvature in a Weyl semimetal becomes singular at the Weyl node, creating an effective magnetic monopole in the k-space. A pair of Weyl nodes carry quantized effective magnetic charges with opposite signs, and therefore, opposite chirality. Although Weyl-point-related signatures such as chiral anomaly and non-closing surface Fermi arcs have been detected through transport and ARPES measurements, direct experimental evidence of the effective k-space monopole of the Weyl nodes has so far been lacking. In this work, signatures of the singular topology in a type-II Weyl semimetal TaIrTe4 is revealed in the photo responses, which are shown to be directly related to the divergence of Berry curvature. As a result of the divergence of Berry curvature at the Weyl nodes, TaIrTe4 exhibits unusually large photo responsivity of 130.2 mA/W with 4-μm excitation in an unbiased field effect transistor at room temperature arising from the third-order nonlinear optical response. The room temperature mid-IR responsivity is approaching the performance of commercial HgCdTe detector operating at low temperature, making Type-II Weyl semimetal TaIrTe4 of practical importance in terms of photo sensing and solar energy harvesting. Furthermore, the high shift photocurrent response at the Weyl cones is found to enhance the circularly polarized galvanic response from Weyl cones with opposite chirality, which opens new experimental possibilities for studying and controlling the chiral polarization of Weyl Fermions through an in-plane DC electric field in addition to the optical helicities.

cond-mat.mtrl-sci↗

Electronic transport properties of Co cluster-decorated graphene

Interactions of magnetic elements with graphene may lead to various electronic states that have potential applications. We report an in-situ experiment in which the quantum transport properties of graphene are measured with increasing cobalt coverage in continuous ultra-high vacuum environment. The results show that e-beam deposited cobalt forms clusters on the surface of graphene, even at low sample temperatures. Scattering of charge carriers by the absorbed cobalt clusters results in the disappearance of the Shubnikov-de Haas (SdH) oscillations and the appearance of negative magnetoresistance (MR) which shows no sign of saturation up to an applied magnetic field of 9 T. We propose that these observations could originate from quantum interference driven by cobalt disorder and can be explained by the weak localization theory.

cond-mat.mes-hall↗

Barkhausen effect in the first order structural phase transition in type-II Weyl semimetal MoTe2

We report the first observation of the non-magnetic Barkhausen effect in van der Waals layered crystals, specifically, between the Td and 1T' phases in type-II Weyl semimetal MoTe2. Thinning down the MoTe2 crystal from bulk material to about 25nm results in a drastic strengthening of the hysteresis in the phase transition, with the difference in critical temperature increasing from 40K to more than 300K. The Barkhausen effect appears for thin samples and the temperature range of the Barkhausen zone grows approximately linearly with reducing sample thickness, pointing to a surface origin of the phase pinning defects. The distribution of the Barkhausen jumps shows a power law behavior, with its critical exponent α = 1.27, in good agreement with existing scaling theory. Temperature-dependent Raman spectroscopy on MoTe2 crystals of various thicknesses shows results consistent with our transport measurements.

cond-mat.mtrl-sci↗

Raman Signatures of Broken Inversion Symmetry and In-plane Anisotropy in Type-II Weyl Semimetal Candidate TaIrTe4

The layered ternary compound TaIrTe4 is an important candidate to host the recently predicted type-II Weyl Fermions. However, a direct and definitive proof of the absence of inversion symmetry in this material, a prerequisite for the existence of Weyl Fermions, has so far remained evasive. Herein, an unambiguous identification of the broken inversion symmetry in TaIrTe4 is established using angle-resolved polarized Raman spectroscopy. Combining with high-resolution transmission electron microscopy, we demonstrate an efficient and nondestructive recipe to determine the exact crystallographic orientation of TaIrTe4 crystals. Such technique could be extended to the fast identification and characterization of other type-II Weyl Fermions candidates. A surprisingly strong in-plane electrical anisotropy in TaIrTe4 thin flakes is also revealed, up to 200% at 10K, which is the strongest known electrical anisotropy for materials with comparable carrier density, notably in such good metals as copper and silver.

cond-mat.mtrl-sci↗

Liquid phase mass production of air-stable black phosphorus/phospholipids nanocomposite with ultralow tunneling barrier

Few-layer black phosphorus (FLBP), a recently discovered two-dimensional semiconductor, has attracted substantial attention in the scientific and technical communities due to its great potential in electronic and optoelectronic applications. However, reactivity of FLBP flakes with ambient species limits its direct applications. Among various methods to passivate FLBP in ambient environment, nanocomposites mixing FLBP flakes with stable matrix may be one of the most promising approaches for industry applications. Here, we report a simple one-step procedure to mass produce air-stable FLBP/phospholipids nanocomposite in liquid phase. The resultant nanocomposite is found to have ultralow tunneling barrier for charge carriers which can be described by an Efros-Shklovskii variable range hopping mechanism. Devices made from such mass-produced FLBP/phospholipids nanocomposite show highly stable electrical conductivity and opto-electrical response in ambient conditions, indicating its promising applications in both electronic and optoelectronic applications. This method could also be generalized to the mass production of nanocomposites consisting of other air-sensitive two-dimensional materials, such as FeSe, NbSe2, WTe2, etc.

cond-mat.mtrl-sci↗

Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus (BP) by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10V/nm to 0.83V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronics, thermoelectric power generation and thermal imaging.

cond-mat.mes-hall↗

Gate Tunable Magneto-resistance of Ultra-Thin WTe2 Devices

In this work, the magneto-resistance (MR) of ultra-thin WTe2/BN heterostructures far away from electron-hole equilibrium is measured. The change of MR of such devices is found to be determined largely by a single tunable parameter, i.e. the amount of imbalance between electrons and holes. We also found that the magnetoresistive behavior of ultra-thin WTe2 devices is well-captured by a two-fluid model. According to the model, the change of MR could be as large as 400,000%, the largest potential change of MR among all materials known, if the ultra-thin samples are tuned to neutrality when preserving the mobility of 167,000 cm2V-1s-1 observed in bulk samples. Our findings show the prospects of ultra-thin WTe2 as a variable magnetoresistance material in future applications such as magnetic field sensors, information storage and extraction devices, and galvanic isolators. The results also provide important insight into the electronic structure and the origin of the large MR in ultra-thin WTe2 samples.

cond-mat.mtrl-sci↗

Nonlinear Transport of Graphene in the Quantum Hall Regime

We have studied the breakdown of the integer quantum Hall (QH) effect with fully broken symmetry, in an ultra-high mobility graphene device sandwiched between two single crystal hexagonal boron nitride substrates. The evolution and stabilities of the QH states are studied quantitatively through the nonlinear transport with dc Hall voltage bias. The mechanism of the QH breakdown in graphene and the movement of the Fermi energy with the electrical Hall field are discussed. This is the first study in which the stabilities of fully symmetry broken QH states are probed all together. Our results raise the possibility that the v=6 states might be a better target for the quantum resistance standard.

cond-mat.mes-hall↗

On the quantum spin Hall gap of monolayer 1T'-WTe2

Quantum spin Hall (QSH) materials are two-dimensional systems exhibiting insulating bulk and helical edge states simultaneously. A QSH insulator processes topologically non-trivial edge states protected by time-reversal symmetry, so that electrons can propagate unscattered. Realization of such topological phases enables promising applications in spintronics, dissipationless transport and quantum computations. Presently, realization of such QSH-based devices are limited to complicated heterostructures. Monolayer 1T'-WTe2 was predicted to be semimetallic QSH materials, though with a negative band gap. The quasi-particle spectrum obtained using hybrid functional approach shows directly that the quantum spin Hall gap is positive for monolayer 1T'-WTe2. Optical measurement shows a systematic increase in the interband relaxation time with decreasing number of layers, whereas transport measurement reveals Schottcky barrier in ultrathin samples, which is absent for thicker samples. These three independent pieces of evidence indicate that monolayer 1T'-WTe2 is likely a truly 2-dimensional quantum spin Hall insulator.

cond-mat.mtrl-sci↗

Tunable Kondo Effect in Graphene with Defects

Graphene is a model system for the study of electrons confined to a strictly two-dimensional layer1 and a large number of electronic phenomena have been demonstrated in graphene, from the fractional2, 3 quantum Hall effect to superconductivity4. However, the coupling of conduction electrons to local magnetic moments5, 6, a central problem of condensed matter physics, has not been realized in graphene, and, given carbon's lack of d or f electrons, magnetism in graphene would seem unlikely. Nonetheless, magnetism in graphitic carbon in the absence of transition-metal elements has been reported7-10, with explanations ranging from lattice defects11 to edge structures12, 13 to negative curvature regions of the graphene sheet14. Recent experiments suggest that correlated defects in highly-ordered pyrolytic graphite (HOPG) induced by proton irradiation9 or native to grain boundaries7, can give rise to ferromagnetism. Here we show that point defects (vacancies) in graphene15 are local moments which interact strongly with the conduction electrons through the Kondo effect6, 16-18 providing strong evidence that defects in graphene are indeed magnetic. The Kondo temperature TK is tunable with carrier density from 30-90 K; the high TK is a direct consequence of strong coupling of defects to conduction electrons in a Dirac material18. The results indicate that defect engineering in graphene could be used to generate and control carrier-mediated magnetism, and realize all-carbon spintronic devices. Furthermore, graphene should be an ideal system in which to probe Kondo physics in a widely tunable electron system.

cond-mat.mes-hall↗

Charged impurity scattering in bilayer graphene

We have examined the impact of charged impurity scattering on charge carrier transport in bilayer graphene (BLG) by deposition of potassium in ultra-high vacuum at low temperature. Charged impurity scattering gives a conductivity which is supra-linear in carrier density, with a magnitude similar to single-layer graphene for the measured range of carrier densities of 2-4 x 10^12 cm^-2. Upon addition of charged impurities of concentration n_imp, the minimum conductivity Sigma_min decreases proportional to n_imp^-1/2, while the electron and hole puddle carrier density increases proportional to n_imp^1/2. These results for the intentional deposition of potassium on BLG are in good agreement with theoretical predictions for charged impurity scattering. However, our results also suggest that charged impurity scattering alone cannot explain the observed transport properties of pristine BLG on SiO2 before potassium doping.

cond-mat.mes-hall↗

Defect scattering in graphene

Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier density, with mobility decreasing as the inverse of the ion dose. The mobility decrease is four times larger than for a similar concentration of singly charged impurities. The minimum conductivity decreases proportional to the mobility to values lower than 4e^2/(pi*h), the minimum theoretical value for graphene free of intervalley scattering. Defected graphene shows a diverging resistivity at low temperature, indicating insulating behavior. The results are best explained by ion-induced formation of lattice defects that result in mid-gap states.

cond-mat.mtrl-sci↗

Printed Graphene Circuits

we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have low contact resistance. The results show that the transfer printing method is capable of high-quality transfer of graphene materials from silicon dioxide substrates, and the method thus will have wide applications in manipulating and delivering graphene materials to desired substrate and device geometries. Since the method is purely additive, it exposes graphene (or other functional materials) to no chemical preparation or lithographic steps, providing greater experimental control over device environment for reproducibility and for studies of fundamental transport mechanisms. Finally, the transport properties of the graphene devices on the PET substrate demonstrate the non-universality of minimum conductivity and the incompleteness of the current transport theory.

cond-mat.mtrl-sci↗