Searcharxiv⌕ Search

arXiv subjects

Jian-Ping Wang

Publications and source records attributed to Jian-Ping Wang.

At least 37 records · Page 2Linked to original sources

Enhanced Spin Hall Response From Aligned Kramers-Weyl Points in High Chern Number Semimetals

We propose a spin Hall effect (SHE) enhancement mechanism due to Kramers-Weyl point (KWP) alignment in chiral topological semimetals with high Chern numbers (CNs). Through model Hamiltonian calculations, we identify enhancements in the intrinsic spin Hall conductivity (SHC) and the spin Hall angle (SHA). Such enhancements, attributed to a unique high CN KWP energetic alignment and a high degree of SOC-induced band nesting, strongly depend on orbital-orbital interactions. This represents a novel mechanism to enhance SHE, differing from the spin-orbit induced anticrossing mechanism in gapped systems. Guided by this principle, we corroborate our results by means of first-principles calculations and reveal multiple realistic materials with large intrinsic SHCs and even larger SHAs than Pt.

cond-mat.mes-hall↗

Magnetization Dynamics in Synthetic Antiferromagnets with Perpendicular Magnetic Anisotropy

Understanding the rich physics of magnetization dynamics in perpendicular synthetic antiferromagnets (p-SAFs) is crucial for developing next-generation spintronic devices. In this work, we systematically investigate the magnetization dynamics in p-SAFs combining time-resolved magneto-optical Kerr effect (TR-MOKE) measurements with theoretical modeling. These model analyses, based on a Landau-Lifshitz-Gilbert approach incorporating exchange coupling, provide details about the magnetization dynamic characteristics including the amplitudes, directions, and phases of the precession of p-SAFs under varying magnetic fields. These model-predicted characteristics are in excellent quantitative agreement with TR-MOKE measurements on an asymmetric p-SAF. We further reveal the damping mechanisms of two procession modes co-existing in the p-SAF and successfully identify individual contributions from different sources, including Gilbert damping of each ferromagnetic layer, spin pumping, and inhomogeneous broadening. Such a comprehensive understanding of magnetization dynamics in p-SAFs, obtained by integrating high-fidelity TR-MOKE measurements and theoretical modeling, can guide the design of p-SAF-based architectures for spintronic applications.

cond-mat.mes-hall↗

Robust negative longitudinal magnetoresistance and spin-orbit torque in sputtered Pt3Sn topological semimetal

Contrary to topological insulators, topological semimetals possess a nontrivial chiral anomaly that leads to negative magnetoresistance and are hosts to both conductive bulk states and topological surface states with intriguing transport properties for spintronics. Here, we fabricate highly-ordered metallic Pt3Sn and Pt3SnxFe1-x thin films via sputtering technology. Systematic angular dependence (both in-plane and out-of-plane) study of magnetoresistance presents surprisingly robust quadratic and linear negative longitudinal magnetoresistance features for Pt3Sn and Pt3SnxFe1-x, respectively. We attribute the anomalous negative longitudinal magnetoresistance to the type-II Dirac semimetal phase (pristine Pt3Sn) and/or the formation of tunable Weyl semimetal phases through symmetry breaking processes, such as magnetic-atom doping, as confirmed by first-principles calculations. Furthermore, Pt3Sn and Pt3SnxFe1-x show the promising performance for facilitating the development of advanced spin-orbit torque devices. These results extend our understanding of chiral anomaly of topological semimetals and can pave the way for exploring novel topological materials for spintronic devices.

cond-mat.mtrl-sci↗

Observation of the unidirectional magnetoresistance in antiferromagnetic insulator Fe2O3/Pt bilayers

Unidirectional magnetoresistance (UMR) has been observed in a variety of stacks with ferromagnetic/spin Hall material bilayer structures. In this work, we reported UMR in antiferromagnetic insulator Fe2O3/Pt structure. The UMR has a negative value, which is related to interfacial Rashba coupling and band splitting. Thickness-dependent measurement reveals a potential competition between UMR and the unidirectional spin Hall magnetoresistance (USMR). This work revealed the existence of UMR in antiferromagnetic insulators/heavy metal bilayers and broadens the way for the application of antiferromagnet-based spintronic devices.

cond-mat.mtrl-sci↗

Frequency and Amplitude Optimizations for Magnetic Particle Spectroscopy Applications

Nowadays, there is a growing interest in the field of magnetic particle spectroscopy (MPS)-based bioassays. MPS monitors the dynamic magnetic response of surface-functionalized magnetic nanoparticles (MNPs) upon excitation by an alternating magnetic field (AMF) to detect various target analytes. This technology has flourished in the past decade due to its low cost, low background magnetic noise interference from biomatrix, and fast response time. A large number of MPS variants have been reported by different groups around the world, with applications ranging from disease diagnosis to foodborne pathogen detection, and virus detection. However, there is an urgent need for guidance on how to optimize the sensitivity of MPS detection by choosing different types of MNPs, AMF modalities, and MPS assay strategies (i.e., volume- and surface-based assays). In this work, we systematically study the effect of AMF frequencies and amplitudes on the responses of single- and multi-core MNPs under two extreme conditions, namely, the bound and unbound states. Our results show that some modalities such as dual-frequency MPS utilizing multicore MNPs are more suitable for surface-based bioassay applications, whereas, single-frequency MPS systems using single- or multi-core MNPs are better suited for volumetric bioassay applications. Furthermore, the bioassay sensitivities for these modalities can be further improved by careful selection of AMF frequencies and amplitudes.

eess.SY↗

Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers

Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting performance and spintronic non-volatility could deliver unique functionality. Here we report the study of magnetic tunnel junctions with Nb as the heavy metal layers. An interfacial perpendicular magnetic anisotropy energy density of 1.85 mJ/m2 was obtained in Nb/CoFeB/MgO heterostructures. The tunneling magnetoresistance was evaluated in junctions with different thickness combinations and different annealing conditions. An optimized magnetoresistance of 120% was obtained at room temperature, with a damping parameter of 0.011 determined by ferromagnetic resonance. In addition, spin-transfer torque switching has also been successfully observed in these junctions with a quasistatic switching current density of 7.3*10^5 A/cm2.

physics.app-ph↗

5-Minute Magnetic Particle Spectroscopy (MPS)-based Bioassay: Towards Ultra-fast, Convenient, and Large-scale Disease Diagnosis

In this work, we report a 5-minute magnetic particle spectroscopy (MPS)-based bioassay strategy. In our approach, surface functionalized magnetic nanoparticles (MNPs) are incubated with target analytes at 37 °C with agitation for 3 minutes and the MPS reading is then taken at the 5th minute. We have proved the feasibility of 5-minute ultra-fast detection of SARS-CoV-2 spike protein with a detection limit below 5 nM (0.2 pmole). Our proposed 5-minute bioassay strategy may be applied to reduce assay time for other liquid phase, volumetric biosensors such as nuclear magnetic resonance (NMR), quantum dots (QD), fluorescent biosensors, etc.

physics.med-ph↗

Room temperature spin-orbit torque efficiency in sputtered low-temperature superconductor delta-TaN

In the course of searching for promising topological materials for applications in future topological electronics, we evaluated spin-orbit torques (SOTs) in high-quality sputtered $δ-$TaN/Co20Fe60B20 devices through spin-torque ferromagnetic resonance ST-FMR and spin pumping measurements. From the ST-FMR characterization we observed a significant linewidth modulation in the magnetic Co20Fe60B20 layer attributed to the charge-to-spin conversion generated from the $δ-$TaN layer. Remarkably, the spin-torque efficiency determined from ST-FMR and spin pumping measurements is as large as $Θ =$ 0.034 and 0.031, respectively. These values are over two times larger than for $α-$Ta, but almost five times lower than for $β-$Ta, which can be attributed to the low room temperature electrical resistivity $\sim 74μΩ$ cm in $δ-$TaN. A large spin diffusion length of at least $\sim8$ nm is estimated, which is comparable to the spin diffusion length in pure Ta. Comprehensive experimental analysis, together with density functional theory calculations, indicates that the origin of the pronounced SOT effect in $δ-$TaN can be mostly related to a significant contribution from the Berry curvature associated with the presence of a topically nontrivial electronic band structure in the vicinity of the Fermi level (EF). Through additional detailed theoretical analysis, we also found that an isostructural allotrope of the superconducting $δ-$TaN phase, the simple hexagonal structure, $θ-$TaN, has larger Berry curvature, and that, together with expected reasonable charge conductivity, it can also be a promising candidate for exploring a generation of spin-orbit torque magnetic random access memory as cheap, temperature stable, and highly efficient spin current sources.

cond-mat.mes-hall↗

Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$

We performed comprehensive theoretical and experimental studies of the electronic structure and the Fermi surface topology of two novel quantum materials, MoSi$_2$ and WSi$_2$. The theoretical predictions of the electronic structure in the vicinity of the Fermi level was verified experimentally by thorough analysis of the observed quantum oscillations in both electrical resistivity and magnetostriction. We established that the Fermi surface sheets in MoSi$_2$ and WSi$_2$ consist of 3D dumbbell-shaped hole-like pockets and rosette-shaped electron-like pockets, with nearly equal volumes. Based on this finding, both materials were characterized as almost perfectly compensated semimetals. In conjunction, the magnetoresistance attains giant values of $10^4$ and $10^5\,\%$ for WSi$_2$ and MoSi$_2$, respectively. In turn, the anisotropic magnetoresistance achieves $-95$ and $-98\,\%$ at $T=2\,$K and in $B=14\,$T for WSi$_2$ and MoSi$_2$, respectively. Furthermore, for both compounds we observed the Shoenberg effect in their Shubnikov-de Haas oscillations that persisted at as high temperature as $T=25\,$K in MoSi$_2$ and $T=12\,$K in WSi$_2$. In addition, we found for MoSi$_2$ a rarely observed spin-zero phenomenon. Remarkably, the electronic structure calculations revealed type-II Dirac cones located near 480 meV and 710 meV above the Fermi level in MoSi$_2$ and WSi$_2$, respectively.

cond-mat.mtrl-sci↗

Element Doping Enhanced Charge-to-Spin Conversion Efficiency in Amorphous PtSn4 Dirac Semimetal

Topological semimetals (TSs) are promising candidates for low-power spin-orbit torque (SOT) devices due to their large charge-to-spin conversion efficiency. Here, we investigated the charge-to-spin conversion efficiency of amorphous PtSn4 (5 nm)/CoFeB (2.5-12.5 nm) layered structures prepared by a magnetron sputtering method at room temperature. The charge-to-spin ratio of PtSn4/CoFeB bilayers was 0.08, characterized by a spin torque ferromagnetic resonance (ST-FMR) technique. This ratio can further increase to 0.14 by inducing dopants, like Al and CoSi, into PtSn4. The dopants can also decrease (Al doping) or increase (CoSi doping) the resistivity of PtSn4. The work proposed a way to enhance the spin-orbit coupling (SOC) in amorphous TSs with dopants.

cond-mat.mtrl-sci↗

Perpendicular magnetic tunnel junctions with multi-interface free layer

Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular magnetic tunnel junctions with composite free layers where multiple ferromagnet/nonmagnet interfaces can contribute to the thermal stability. Different nonmagnetic materials (MgO, Ta, Mo) have been employed as the coupling layers in these multi-interface free layers. The evolution of junction properties under different annealing conditions is investigated. A strong dependence of tunneling magnetoresistance on the thickness of the first CoFeB layer has been observed. In junctions where Mo and MgO are used as coupling layers, large tunneling magnetoresistance above 200% has been achieved after 400°C annealing.

cond-mat.mtrl-sci↗

Towards Homomorphic Inference Beyond the Edge

Beyond edge devices can function off the power grid and without batteries, enabling them to operate in difficult to access regions. However, energy costly long-distance communication required for reporting results or offloading computation becomes a limitation. Here, we reduce this overhead by developing a beyond edge device which can effectively act as a nearby server to offload computation. For security reasons, this device must operate on encrypted data, which incurs a high overhead. We use energy-efficient and intermittent-safe in-memory computation to enable this encrypted computation, allowing it to provide a speedup for beyond edge applications within a power budget of a few milliWatts.

cs.CR↗

Anomalous temperature dependence of phonon pumping by ferromagnetic resonance in Co/Pd multilayers with perpendicular anisotropy

We demonstrate the pumping of phonons by ferromagnetic resonance in a series of [Co(0.8 nm)/Pd(1.5 nm)]$_n$ multilayers ($n =$ 6, 11, 15, and 20) with large magnetostriction and perpendicular magnetic anisotropy. The effect is shown using broadband ferromagnetic resonance over a range of temperatures (10 to 300 K), where a resonant damping enhancement is observed at frequencies corresponding to standing wave phonons across the multilayer. The strength of this effect is enhanced by approximately a factor of 4 at 10 K compared to room temperature, which is anomalous in the sense that the temperature dependence of the magnetostriction predicts an enhancement that is less than a factor of 2. Lastly, we demonstrate that the damping enhancement is correlated with a shift in the ferromagnetic resonance field as predicted quantitatively from linear response theory.

cond-mat.mtrl-sci↗

Determination of spin-orbit torques by thickness-dependent spin-orbit torque FMR measurement

Current induced spin-orbit torques (SOTs) in Fe/Pt bilayers have been investigated utilizing the spin-orbit torque ferromagnetic resonance (SOT-FMR) measurement. Characterization of thin films with different thicknesses indicates existence of a sizable field-like spin-orbit torque competing with the Oersted field induced torque (Oersted torque). The field-like torque is neglected in the standard SOT-FMR method and the presence of a strong field-like torque makes estimation of the spin Hall angle (SHA) problematic. Also, it is challenging to differentiate the field-like torque from the Oersted torque in a radiofrequency measurement. Based on the thickness dependence of field-like torque, anti-damping torque, and Oersted torque, the thickness-dependent SOT-FMR measurement is proposed as a more reliable, self-calibrated approach for characterization of spin-orbit torques.

physics.app-ph↗

Bipolar electric field switching of perpendicular magnetic tunnel junctions through voltage controlled exchange coupling

Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier of ferromagnetic layer via electric field effect and efficiently switches p-MTJs only with a unipolar behavior. Here we demonstrate a bipolar electric field effect switching of 100-nm p-MTJs with a synthetic antiferromagnetic free layer through voltage-controlled exchange coupling (VCEC). The switching current density, ~1.1x10^5 A/cm^2, is one order of magnitude lower than that of the best-reported spin-transfer torque devices. Theoretical results suggest that electric field induces a ferromagnetic-antiferromagnetic exchange coupling transition of the synthetic antiferromagnetic free layer and generates a field-like interlayer exchange coupling torque, which cause the bidirectional magnetization switching of p-MTJs. A preliminary benchmarking simulation estimates that VCEC dissipates an order of magnitude lower writing energy compared to spin-transfer torque at the 15-nm technology node. These results could eliminate the major obstacle in the development of spin memory devices beyond their embedded applications.

physics.app-ph↗

One-step, Wash-free, Nanoparticle Clustering-based Magnetic Particle Spectroscopy (MPS) Bioassay Method for Detection of SARS-CoV-2 Spike and Nucleocapsid Proteins in Liquid Phase

With the ongoing global pandemic of coronavirus disease 2019 (COVID-19), there is an increasing quest for more accessible, easy-to-use, rapid, inexpensive, and high accuracy diagnostic tools. Traditional disease diagnostic methods such as qRT-PCR (quantitative reverse transcription-PCR) and ELISA (enzyme-linked immunosorbent assay) require multiple steps, trained technicians, and long turnaround time that may worsen the disease surveillance and pandemic control. In sight of this situation, a rapid, one-step, easy-to-use, and high accuracy diagnostic platform will be valuable for future epidemic control especially for regions with scarce medical resources. Herein, we report a magnetic particle spectroscopy (MPS) platform for detection of SARS-CoV-2 biomarkers: spike and nucleocapsid proteins.

q-bio.QM↗

Thermal Contribution in the Electrical Switching Experiments with Heavy Metal / Antiferromagnet Structures

We examine the thermal origin of the detected "saw-tooth" shaped Hall resistance (Rxy) signals in the spin-orbit torque switching experiment for antiferromagnetic MnN. Compared with the results of the heavy metal / antiferromagnet bilayers (MnN/Ta), the qualitatively same "saw-tooth" shaped signals also appear in the samples with the heavy metal layer alone (either Ta or Pt) without MnN layer. In addition, The Rxy signal changes oppositely in the devices with Ta and Pt, due to the opposite temperature coefficient of resistivity (TCR) of the two materials. All those results are consistent with the "localized Joule heating" mechanism in devices with Hall crosses geometry. Moreover, by utilizing a structure with separated writing current paths and Hall cross area, the quadratic relationship between delta-Rxy and the writing current's amplitude is observed, which provides quantitative evidence of the thermal contribution. These results reveal the dominant thermal artifact in the widely used Hall crosses geometry for Neel vector probing, and also provide a strategy to semi-quantitatively evaluate the thermal effect, which can shed light on a more conclusive experiment design.

cond-mat.mes-hall↗

Exploring the Feasibility of Using 3D XPoint as an In-Memory Computing Accelerator

This paper describes how 3D XPoint memory arrays can be used as in-memory computing accelerators. We first show that thresholded matrix-vector multiplication (TMVM), the fundamental computational kernel in many applications including machine learning, can be implemented within a 3D XPoint array without requiring data to leave the array for processing. Using the implementation of TMVM, we then discuss the implementation of a binary neural inference engine. We discuss the application of the core concept to address issues such as system scalability, where we connect multiple 3D XPoint arrays, and power integrity, where we analyze the parasitic effects of metal lines on noise margins. To assure power integrity within the 3D XPoint array during this implementation, we carefully analyze the parasitic effects of metal lines on the accuracy of the implementations. We quantify the impact of parasitics on limiting the size and configuration of a 3D XPoint array, and estimate the maximum acceptable size of a 3D XPoint subarray.

cs.AR↗