arXiv subjects

Jian-Ping Wang

Publications and source records attributed to Jian-Ping Wang.

At least 91 records · Page 5Linked to original sources

arXiv2017

Low Gilbert Damping Constant in Perpendicularly Magnetized W/CoFeB/MgO Films with High Thermal Stability

Perpendicular magnetic materials with low damping constant and high thermal stability have great potential for realizing high-density, non-volatile, and low-power consumption spintronic devices, which can sustain operation reliability for high processing temperatures. In this work, we study the Gilbert damping constant (α) of perpendicularly magnetized W/CoFeB/MgO films with a high perpendicular magnetic anisotropy (PMA) and superb thermal stability. The α of these PMA films annealed at different temperatures is determined via an all-optical Time-Resolved Magneto-Optical Kerr Effect method. We find that α of these W/CoFeB/MgO PMA films decreases with increasing annealing temperature, reaches a minimum of α = 0.016 at an annealing temperature of 350 °C, and then increases to 0.024 after post-annealing at 400 °C. The minimum α observed at 350 °C is rationalized by two competing effects as the annealing temperature becomes higher: the enhanced crystallization of CoFeB and dead-layer growth occurring at the two interfaces of the CoFeB layer. We further demonstrate that α of the 400 °C-annealed W/CoFeB/MgO film is comparable to that of a reference Ta/CoFeB/MgO PMA film annealed at 300 °C, justifying the enhanced thermal stability of the W-seeded CoFeB films.

cond-mat.mes-hall↗

arXiv2017

CoMET: Composite-Input Magnetoelectric-based Logic Technology

This work proposes CoMET, a fast and energy-efficient spintronics device for logic applications. An input voltage is applied to a ferroelectric (FE) material, in contact with a composite structure - a ferromagnet (FM) with in-plane magnetic anisotropy (IMA) placed on top of an intra-gate FM interconnect with perpendicular magnetic anisotropy (PMA). Through the magnetoelectric (ME) effect, the input voltage nucleates a domain wall (DW) at the input end of the PMA-FM interconnect. An applied current then rapidly propagates the DW towards the output FE structure, where the inverse-ME effect generates an output voltage. This voltage is propagated to the input of the next CoMET device using a novel circuit structure that enables efficient device cascading. The material parameters for CoMET are optimized by systematically exploring the impact of parameter choices on device performance. Simulations on a 7nm CoMET device show fast, low-energy operation, with a delay/energy of 98ps/68aJ for INV and 135ps/85aJ for MAJ3.

cs.ET↗

arXiv2017

Room-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered BixSe(1-x) topological insulator material

The spin-orbit torque (SOT) arising from materials with large spin-orbit coupling promises a path for ultra-low power and fast magnetic-based storage and computational devices. We investigated the SOT from magnetron-sputtered BixSe(1-x) thin films in BixSe(1-x)/CoFeB heterostructures by using a dc planar Hall method. Remarkably, the spin Hall angle (SHA) was found to be as large as 18.83, which is the largest ever reported at room temperature (RT). Moreover, switching of a perpendicular CoFeB multilayer using SOT from the BixSe(1-x) has been observed with the lowest-ever switching current density reported in a bilayer system: 2.3 * 105 A/cm2 at RT. The giant SHA, smooth surface, ease of growth of the films on silicon substrate, successful growth and switching of a perpendicular CoFeB multilayer on BixSe(1-x) film opens a path for use of BixSe(1-x) topological insulator (TI) material as a spin-current generator in SOT-based memory and logic devices.

cond-mat.mes-hall↗

arXiv2017

Unidirectional spin Hall magnetoresistance in topological insulator/ferromagnetic layer heterostructures

The large spin orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments at room temperature. However, memory or logic spin devices based upon such switching require a non-optimal three terminal geometry, with two terminals for the writing current and one for reading the state of the device. An alternative two terminal device geometry is now possible by exploiting the recent discovery of a unidirectional spin Hall magnetoresistance in heavy metal/ferromagnet bilayers and (at low temperature) in magnetically doped topological insulator heterostructures. We report the observation of unidirectional spin Hall magnetoresistance in a technologically relevant device geometry that combines a topological insulator with a conventional ferromagnetic metal. Our devices show a figure-of-merit (magnetoresistance per current density per total resistance) that is comparable to the highest reported values in all-metal Ta/Co bilayers.

cond-mat.mes-hall↗

arXiv2016

Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology

Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel junctions (MTJ) on a Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) piezoelectric substrate with (001) orientation. It is found that the magnetic easy axis, switching field, and the tunnel magnetoresistance (TMR) of the MTJ can be efficiently controlled by strain from the underlying piezoelectric layer upon the application of a gate voltage. Repeatable voltage controlled MTJ toggling between high/low-resistance states is demonstrated. More importantly, instead of relying on the intrinsic anisotropy of the piezoelectric substrate to generate the required strain, we utilize anisotropic strain produced using local gating scheme, which is scalable and amenable to practical memory applications. Additionally, the adoption of crystalline MgO-based MTJ on piezoelectric layer lends itself to high TMR in the strain-mediated MRAM devices.

cond-mat.mes-hall↗

arXiv2016

Picosecond all-optical switching of magnetic tunnel junctions

Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and electric field or strain assisted switching have been implemented to switch magnetization in various spintronic devices. Their operation speed, however, is fundamentally limited by the spin precession time to be longer than 10-100 picoseconds. Overcoming such a speed constraint is critical for the prospective development of spintronics. Here we report the demonstration of picosecond all-optical switching of a magnetic tunnel junction (MTJ)- the building block of spintronic logic and memory -only using single telecom-band, infrared laser pulses. This first optically switchable MTJ uses ferrimagnetic GdFeCo as the free layer, and its switching is directly readout by measuring its tunneling magnetoresistance with a DR/R ratio of 0.6%. An instrument limited switching repetition rate at MHz has been demonstrated, but the fundamental limit should be higher than tens of GHz. This result represents an important step toward integrated opto-spintronic devices that combines spintronics and photonics technologies to enable ultrafast conversion between fundamental information carriers of electron spins and photons.

cond-mat.mtrl-sci↗

arXiv2015

Revealing the Anisotropic Thermal Conductivity of Black Phosphorus using the Time-Resolved Magneto-Optical Kerr Effect

Black phosphorus (BP) has emerged as a direct-bandgap semiconducting material with great application potentials in electronics, photonics, and energy conversion. Experimental characterization of the anisotropic thermal properties of BP, however, is extremely challenging due to the lack of reliable and accurate measurement techniques to characterize anisotropic samples that are micrometers in size. Here, we report measurement results of the anisotropic thermal conductivity of bulk BP along three primary crystalline orientations, using the novel time-resolved magneto-optical Kerr effect (TR-MOKE) with enhanced measurement sensitivities. Two-dimensional beam-offset TR-MOKE signals from BP flakes yield the thermal conductivity along the zigzag crystalline direction to be 84 ~ 101 W/(m*K), nearly three times as large as that along the armchair direction (26 ~ 36 W/(m*K)). The through-plane thermal conductivity of BP ranges from 4.3 to 5.5 W/(m*K). The first-principles calculation was performed for the first time to predict the phonon transport in BP both along the in-plane zigzag and armchair directions and along the through-plane direction. This work successfully unveiled the fundamental mechanisms of anisotropic thermal transport along the three crystalline directions in bulk BP, as demonstrated by the excellent agreement between our first-principles-based theoretical predictions and experimental characterizations on the anisotropic thermal conductivities of bulk BP.

cond-mat.mtrl-sci↗

arXiv2015

Evaluation of Spin Waves and Ferromagnetic Resonance Contribution to the Spin Pumping in Ta/CoFeB Structure

The spin waves and ferromagnetic resonance (FMR) contribution to the spin pumping signal is studied in the Ta/CoFeB interface under different excitation bias fields. Ferromagnetic resonance is excited utilizing a coplanar waveguide and a microwave generator. Using a narrow waveguide of about 3 μm, magnetostatic surface spin waves with large wavevector (k) of about 0.81 μm^-1 are excited. A large k value results in dissociation of spin waves and FMR frequencies according to the surface spin wave dispersion relation. Spin waves and FMR contribution to the spin pumping are calculated based on the area under the Lorentzian curve fitting over experimental results. It is found that the FMR over spin waves contribution is about 1 at large bias fields in Ta/CoFeB structure. Based on our spin pumping results, we propose a method to characterize the spin wave decay constant which is found to be about 5.5 μm in the Ta/CoFeB structure at a bias field of 600 Oe.

cond-mat.mes-hall↗

arXiv2015

Spin Hall Switching of the Magnetization in Ta/TbFeCo Structures with Bulk Perpendicular Anisotropy

Spin-orbit torques are studied in Ta/TbFeCo patterned structures with a bulk perpendicular magnetic anisotropy (bulk-PMA) for the first time. The current-induced magnetization switching is investigated in the presence of a perpendicular, longitudinal, or transverse field. In order to rule out Joule heating effect, switching of the magnetization is also demonstrated using current pulses. It is found that the anti-damping torque correlated with spin Hall effect is very strong, and a spin Hall angle of about 0.12 is obtained. The field-like torque related with Rashba effect is negligible in this structure suggesting that the interface play a significant role in Rashba-like torque.

cond-mat.mes-hall↗

arXiv2014

Computing with spins and magnets

The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two terminal devices that change their resistance based on switchable magnetization of magnetic materials. They utilize the interaction between electron spin and magnets to read information from the magnets and write onto them. Such advances in memory devices could also translate into a new class of logic devices that offer the advantage of nonvolatile and reconfigurable information processing over transistors. Logic devices having a transistor-like gain and directionality could be used to build integrated circuits without the need for transistor-based amplifiers and clocks at every stage. We review device characteristics and basic logic gates that compute with spins and magnets from the mesoscopic to the atomic scale, as well as materials, integration, and fabrication challenges and methods.

cond-mat.mes-hall↗

arXiv2014

Searching for high magnetization density in bulk Fe: the new metastable Fe$_6$ phase

We report the discovery of a new allotrope of iron by first principles calculations. This phase has $Pmn2_1$ symmetry, a six-atom unit cell (hence the name Fe$_6$), and the highest magnetization density (M$_s$) among all known crystalline phases of iron. Obtained from the structural optimizations of the Fe$_3$C-cementite crystal upon carbon removal, $Pmn2_1$ Fe$_6$ is shown to result from the stabilization of a ferromagnetic FCC phase, further strained along the Bain path. Although metastable from 0 to 50 GPa, the new phase is more stable, at low pressures, than the other well-known HCP and FCC allotropes and smoothly transforms into the FCC phase under compression. If stabilized to room temperature, e.g., by interstitial impurities, Fe$_{6}$ could become the basis material for high M$_s$ rare-earth-free permanent magnets and high-impact applications such as, light-weight electric engine rotors or high-density recording media. The new phase could also be key to explain the enigmatic high M$_s$ of Fe$_{16}$N$_2$, which is currently attracting an intense research activity.

cond-mat.mtrl-sci↗

arXiv2014

Room Temperature Spin Pumping in Topological Insulator Bi2Se3

Three-dimensional (3D) topological insulators are known for their strong spin-orbit coupling and the existence of spin-textured topological surface states which could be potentially exploited for spintronics. Here, we investigate spin pumping from a metallic ferromagnet (CoFeB) into a 3D topological insulator (Bi2Se3) and demonstrate successful spin injection from CoFeB into Bi2Se3 and the direct detection of the electromotive force generated by the inverse spin Hal effect (ISHE) at room temperature. The spin pumping, driven by the magnetization dynamics of the metallic ferromagnet, introduces a spin current into the topological insulator layer, resulting in a broadening of the ferromagnetic resonance (FMR) linewidth. We find that the FMR linewidth more than quintuples, the spin mixing conductance can be as large as 3.4*10^20m^-2 and the spin Hall angle can be as large as 0.23 in the Bi2Se3 layer.

cond-mat.mes-hall↗

arXiv2013

Quantum Computation with Magnetic Clusters

We propose a complete, quantitative quantum computing system which satisfies the five DiVincenzo criteria. The model is based on magnetic clusters with uniaxial anisotropy, where standard, two-state qubits are formed utilizing the two lowest-lying states of an anisotropic potential energy. We outline the quantum dynamics required by quantum computing for single qubit structures, and then define a novel measurement scheme in which qubit sates can be measured by sharp changes in current as voltage across the cluster is varied. We then extend the single qubit description to multiple qubit interactions, facilitated specifically by a new entanglement method which propagates the controlled-NOT (C-NOT) quantum gate.

quant-ph↗

arXiv2012

Polarized neutron reflectometry study of Fe16N2 with Giant Saturation Magnetization prepared by N Inter-diffusion in Annealed Fe-N Thin Films

We report a synthesis route to grow iron nitride thin films with giant saturation magnetization (Ms) through an N inter-diffusion process. By post annealing Fe/Fe-N structured films grown on GaAs(001) substrates, nitrogen diffuses from the over-doped amorphous-like Fe-N layer into strained crystalline Fe layer and facilitates the development of metastable Fe16N2 phase. As explored by polarized neutron reflectometry, the depth-dependent Ms profile can be well described by a model with the presence of a giant Ms up to 2360 emu/cm3 at near-substrate interface, corresponding to the strained regions of these annealed films. This is much larger than the currently known limit (Fe65Co35 with Ms \sim 1900 emu/cm3). The present synthesis method can be used to develop writer materials for future magnetic recording application.

cond-mat.mtrl-sci↗

arXiv2012

Direct Observation of Giant Saturation Magnetization in Fe16N2

Magnetic materials with giant saturation magnetization have been a holy grail for magnetic researchers and condensed matter physicists for decades because of its great scientific and technological impacts. As described by the famous Slater-Pauling curve the material with highest Ms is the Fe65Co35 alloy. This was challenged in 1972 by a report on the compound Fe16N2 with Ms much higher than that of Fe65Co35. Following this claim, there have been enormous efforts to reproduce this result and to understand the magnetism of this compound. However, the reported Ms by different groups cover a broad range, mainly due to the unavailability of directly assessing Ms in Fe16N2. In this article, we report a direct observation of the giant saturation magnetization up to 2500 emu/cm3 using polarized neutron reflectometry (PNR) in epitaxial constrained Fe16N2 thin films prepared using a low-energy and surface-plasma-free sputtering process. The observed giant Ms is corroborated by a previously proposed Cluster + Atom model, the characteristic feature of which, namely, the directional charge transfer is evidenced by polarization-dependent x-ray absorption near edge spectroscopy (XANES).

cond-mat.mtrl-sci↗

arXiv2012

Giant saturation magnetization effect in epitaxial Fe16N2 thin films grown on MgO (001) substrate

Whether αdouble prime-Fe16N2 possesses a giant saturation magnetization (Ms) has been a daunting problem among magnetic researchers for almost 40 years, mainly due to the unshakable faith of famous Slater-Pauling (SP) curve and poor consistency on evaluating its Ms. Here we demonstrate that, using epitaxy and mis-fit strain imposed by an underlying substrate, the in-plane lattice constant of Fe16N2 thin films can be fine tuned to create favorable conditions for exceptionally large saturation magnetization. Combined study using polarized neutron reflectometry and X-ray diffraction shows that with increasing strain at the interface the Ms of these film can be changed over a broad range, from ~2.1T (non-high Ms) up to ~3.1T (high Ms). We suggest that the equilibrium in-plane lattice constant of Fe16N2 sits in the vicinity of the spin crossover point, in which a transition between low spin to high spin configuration of Fe sites can be realized with sensitive adjustment of crystal structure.

cond-mat.mtrl-sci↗

arXiv2009

Heavy Fermion-like metal alpha double prime-Fe16N2 with giant saturation magnetization

A new model is proposed for the strong ferromagnetism associated with partially localized orbitals in the Fe16N2 metallic system which draws substantially from models of heavy fermion metals. We demonstrated that an unusual correlation effect is brought up within the Fe-N octahedral cluster region and the effective on-site 3d-3d Coulomb interaction increases due to a substantial 3d electrons charge density difference between the clusters and its surroundings, which leads to a partially localized high spin electron configuration with a long range ferromagnetic order. First principle calculation based on LDA+U method shows that giant magnetic moment can be achieved at sufficiently large Hubbard U value. The feature of the coexistence of the localized and itinerant electron states plays a key role on the formation of the giant saturation magnetization.

cond-mat.mtrl-sci↗

arXiv2009

Discovery of localized states of Fe 3d electrons in Fe16N2 and Fe8N films: an evidence of the existence of giant saturation magnetization

The mystery of giant saturation magnetization of Fe16N2 has remained for 37 years. In this letter, X-ray absorption spectroscopy (XAS) and magnetic circular dichroism (XMCD) are used to study the electron states of Fe atoms in Fe16N2 and Fe8N films. Localized Fe 3d electron states, which are not expected from current theories (models), are observed. The XMCD spectra and elemental hysteresis loops reveal the polarization of N atoms and the hybridization of N and Fe atoms. This discovery points to the origin of giant saturation magnetization in Fe16N2.

cond-mat.mtrl-sci↗