arXiv subjects

Jianqiang Hou

Publications and source records attributed to Jianqiang Hou.

7 recordsLinked to original sources

arXiv2017

Large-area epitaxial growth of MoSe2 via an incandescent molybdenum source

We have developed an incandescent Mo source to fabricate large-area single-crystalline MoSe2 thin films. The as-grown MoSe2 thin films were characterized using transmission electron microscopy, energy dispersive X-ray spectroscopy, atomic force microscopy, Raman spectroscopy, photoluminescence, reflection high energy electron diffraction (RHEED) and angular resolved photoemission spectroscopy (ARPES). A new Raman characteristic peak at 1591 cm-1 was identified. Results from Raman spectroscopy, photoluminescence, RHEED and ARPES studies consistently reveal that large-area single crystalline mono-layer of MoSe2 could be achieved by this technique. This technique enjoys several advantages over conventional approaches and could be extended to the growth of other two-dimensional layered materials containing a low-vapor-pressure element.

cond-mat.mtrl-sci↗

arXiv2017

Possible coexistence of double-Q magnetic order and chequerboard charge order in the re-entrant tetragonal phase of Ba0.76K0.24Fe2As2

We investigate the re-entrant tetragonal phase in the iron-based superconductor Ba0 .76K0.24Fe2As2 by DC magnetization and thermoelectrical measurements. The reversible magnetization confirms by a thermodynamic method that the spin alignment in the re-entrant C4 phase is out-of-plane, in agreement with an itinerant double-Q magnetic order [Allred et al., Nat. Phys. 12, 493 (2016)]. The Nernst coefficient shows the typical unusually large negative value in the stripe-type spin density wave (SDW) state owing to the Fermi surface reconstruction associated with SDW and nematic order. At the transition into the re-entrant C4 tetragonal phase it hardly changes, which could indicate that instead of a complete vanishing of the associated charge order, the spin reorientation could trigger a redistribution of the charges to form a secondary charge order, e.g. in form of a chequerboard-like pattern that no longer breaks the rotational C4 symmetry.

cond-mat.supr-con↗

arXiv2017

Odd-integer quantum Hall states and giant spin susceptibility in p-type few-layer WSe2

We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field. By tilting the magnetic field, we discover Landau level (LL) crossing effects at ultra-low coincident angles, revealing that the Zeeman energy is about three times as large as the cyclotron energy near the valence band top at Γ valley. This result implies the significant roles played by the exchange interactions in p-type few-layer WSe2, in which itinerant or QH ferromagnetism likely occurs. Evidently, the Γ valley of few-layer WSe2 offers a unique platform with unusually heavy hole-carriers and a substantially enhanced g-factor for exploring strongly correlated phenomena.

cond-mat.mes-hall↗

arXiv2016

Type-controlled Nanodevices Based on Encapsulated Few-layer Black Phosphorus for Quantum Transport

We demonstrate that encapsulation of atomically thin black phosphorus (BP) by hexagonal boron nitride (h-BN) sheets is very effective for minimizing the interface impurities induced during fabrication of BP channel material for quantum transport nanodevices. Highly stable BP nanodevices with ultrahigh mobility and controllable types are realized through depositing appropriate metal electrodes after conducting a selective etching to the BP encapsulation structure. Chromium and titanium are suitable metal electrodes for BP channels to control the transition from a p-type unipolar property to ambipolar characteristic because of different work functions. Record-high mobilities of 6000 $cm^2V^{-1}s^{-1}$ and 8400 $cm^2V^{-1}s^{-1}$ are respectively obtained for electrons and holes at cryogenic temperatures. High-mobility BP devices enable the investigation of quantum oscillations with an indistinguishable Zeeman effect in laboratory magnetic field.

cond-mat.mes-hall↗

arXiv2016

Quantum Hall Effect in Ultrahigh Mobility Two-dimensional Hole Gas of Black Phosphorus

We demonstrate that a field effect transistor (FET) made of few layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum, exhibts the room temperature hole mobility of 5200 $cm^2/Vs$ being limited just by the phonon scattering. At cryogenic tempeature the FET mobility increases up to 45,000 $cm^2/Vs$, which is eight times higher compared with the mobility obtained in earlier reports. The unprecedentedly clean h-BN/BP/h-BN heterostructure exhibits Shubnikov-de Haas oscillations and quantum Hall effect with Landau level (LL) filling factors down to v=2 in conventional laboratory magnetic fields. Moreover, carrier density independent effective mass m=0.26 m_0 is measured, and Lande g-factor g=2.47 is reported. Furthermore, an indication for a distinct hole transport behavior with up and down spin orientation is found.

cond-mat.mes-hall↗

arXiv2015

Doping dependence of the critical fluctuation regime in the Fe-based superconductor Ba$_{1-x}$K$_x$Fe$_2$As$_2$

We investigate the importance of superconducting order parameter fluctuations in the 122 family of Fe-based superconductors, using high-resolution specific heat and thermal expansion data of various Ba$_{1-x}$K$_x$Fe$_2$As$_2$ single crystals covering a large range of the phase diagram from the strongly underdoped to the overdoped regime. By applying scaling relations of the 3d-XY and the 3d-Lowest-Landau-Level (3d-LLL) fluctuation models to data measured in different magnetic fields, we demonstrate that a strong increase of the critical fluctuation regime is responsible for the transition broadening in magnetic fields, which is a direct consequence of a magnetic-field-induced finite size effect due to a reduction of the effective dimensionality by a decreasing magnetic length scale related to the mean vortex separation and the confinement of quasiparticles in low Landau levels. The fluctuations are stronger in the underdoped and overdoped regimes and appear to be weakest at optimal doping.

cond-mat.supr-con↗

arXiv2015

Restoration of tetragonal $C_4$ symmetry coexistent with filamentary superconductivity in the pressure induced intermediate phase in the iron-based superconductor Ba$_{1-x}$K$_x$Fe$_2$As$_2$

The hole doped Fe-based superconductors Ba$_{1-x}$A$_x$Fe$_2$As$_2$ (where A=Na or K) show a particular rich phase diagram. It was observed that an intermediate re-entrant tetragonal phase forms within the orthorhombic antiferromagnetically-ordered stripe-type spin density wave state above the superconducting transition [S. Avci et al., Nature Comm. 5, 3845 (2014), A. E. Böhmer et al., arXiv:1412.7038v2]. A similar intermediate phase was reported to appear if pressure is applied to underdoped Ba$_{1-x}$K$_x$Fe$_2$As$_2$ [E. Hassinger et al., Phys. Rev. B 86, 140502(R) (2012)]. Here we report data of the electric resistivity, Hall effect, specific heat, and the thermoelectrical Nernst and Seebeck coefficients measured on a Ba$_{0.85}$K$_{0.15}$Fe$_2$As$_2$ single crystal under pressure up to 5.5 GPa. The data reveals a coexistence of the intermediate phase with filamentary superconductivity. The Nernst coefficient shows a large signature of nematic order that coincides with the stripe-type spin density wave state up to optimal pressure. In the pressure-induced intermediate phase the nematic order is removed, thus confirming that its nature is a re-entrant tetragonal phase.

cond-mat.supr-con↗