arXiv subjects

Jierong Huo

Publications and source records attributed to Jierong Huo.

3 recordsLinked to original sources

arXiv2026

Probing PbTe-Pb nanowire devices with radio-frequency reflectometry

We report the implementation of radio-frequency (rf) reflectometry on selective-area-grown PbTe-Pb nanowire devices on a CdTe substrate. These nanowires are predicted to host Majorana zero modes. We demonstrate the compatibility of the rf technique, including both resistive and capacitive sensing, with these nanowires. The effect of dielectric loss from the CdTe substrate is quantitatively characterized. Furthermore, the feasibility of rf reflectometry is verified under finite magnetic fields where zero-energy modes can emerge. Our results establish the fast control of PbTe quantum devices, paving the way for their applications in topological quantum computation.

cond-mat.mes-hall↗

arXiv2024

Gate-Compatible Circuit Quantum Electrodynamics in a Three-Dimensional Cavity Architecture

Semiconductor-based superconducting qubits offer a versatile platform for studying hybrid quantum devices in circuit quantum electrodynamics (cQED) architecture. Most of these cQED experiments utilize coplanar waveguides, where the incorporation of DC gate lines is straightforward. Here, we present a technique for probing gate-tunable hybrid devices using a three-dimensional (3D) microwave cavity. A recess is machined inside the cavity wall for the placement of devices and gate lines. We validate this design using a hybrid device based on an InAs-Al nanowire Josephson junction. The coupling between the device and the cavity is facilitated by a long superconducting strip, the antenna. The Josephson junction and the antenna together form a gatemon qubit. We further demonstrate the gate-tunable cavity shift and two-tone qubit spectroscopy. This technique could be used to probe various quantum devices and materials in a 3D cQED architecture that requires DC gate voltages.

quant-ph↗

arXiv2023

Gatemon qubit based on a thin InAs-Al hybrid nanowire

We study a gate-tunable superconducting qubit (gatemon) based on a thin InAs-Al hybrid nanowire. Using a gate voltage to control its Josephson energy, the gatemon can reach the strong coupling regime to a microwave cavity. In the dispersive regime, we extract the energy relaxation time $T_1\sim$0.56 $μ$s and the dephasing time $T_2^* \sim$0.38 $μ$s. Since thin InAs-Al nanowires can have fewer or single sub-band occupation and recent transport experiment shows the existence of nearly quantized zero-bias conductance peaks, our result holds relevancy for detecting Majorana zero modes in thin InAs-Al nanowires using circuit quantum electrodynamics.

cond-mat.mes-hall↗