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arXiv · 2311.07337

Gate-Compatible Circuit Quantum Electrodynamics in a Three-Dimensional Cavity Architecture

Zezhou Xia·Jierong Huo·Zonglin Li·Jianghua Ying·Yulong Liu·Xin-Yi Tang·Yuqing Wang·Mo Chen·Dong Pan·Shan Zhang·Qichun Liu·Tiefu Li·Lin Li·Ke He·Jianhua Zhao·Runan Shang·Hao Zhang
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Abstract

Semiconductor-based superconducting qubits offer a versatile platform for studying hybrid quantum devices in circuit quantum electrodynamics (cQED) architecture. Most of these cQED experiments utilize coplanar waveguides, where the incorporation of DC gate lines is straightforward. Here, we present a technique for probing gate-tunable hybrid devices using a three-dimensional (3D) microwave cavity. A recess is machined inside the cavity wall for the placement of devices and gate lines. We validate this design using a hybrid device based on an InAs-Al nanowire Josephson junction. The coupling between the device and the cavity is facilitated by a long superconducting strip, the antenna. The Josephson junction and the antenna together form a gatemon qubit. We further demonstrate the gate-tunable cavity shift and two-tone qubit spectroscopy. This technique could be used to probe various quantum devices and materials in a 3D cQED architecture that requires DC gate voltages.

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Zezhou Xia, Jierong Huo, Zonglin Li, Jianghua Ying, Yulong Liu, Xin-Yi Tang, Yuqing Wang, Mo Chen, Dong Pan, Shan Zhang, Qichun Liu, Tiefu Li, Lin Li, Ke He, Jianhua Zhao, Runan Shang, Hao Zhang. 2023-11-13. Gate-Compatible Circuit Quantum Electrodynamics in a Three-Dimensional Cavity Architecture. https://doi.org/10.1103/physrevapplied.21.034031

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