arXiv subjects

Jiewen Xiao

Publications and source records attributed to Jiewen Xiao.

27 records · Page 2Linked to original sources

arXiv2022

Mushroom image recognition and distance generation based on attention-mechanism model and genetic information

The species identification of Macrofungi, i.e. mushrooms, has always been a challenging task. There are still a large number of poisonous mushrooms that have not been found, which poses a risk to people's life. However, the traditional identification method requires a large number of experts with knowledge in the field of taxonomy for manual identification, it is not only inefficient but also consumes a lot of manpower and capital costs. In this paper, we propose a new model based on attention-mechanism, MushroomNet, which applies the lightweight network MobileNetV3 as the backbone model, combined with the attention structure proposed by us, and has achieved excellent performance in the mushroom recognition task. On the public dataset, the test accuracy of the MushroomNet model has reached 83.9%, and on the local dataset, the test accuracy has reached 77.4%. The proposed attention mechanisms well focused attention on the bodies of mushroom image for mixed channel attention and the attention heat maps visualized by Grad-CAM. Further, in this study, genetic distance was added to the mushroom image recognition task, the genetic distance was used as the representation space, and the genetic distance between each pair of mushroom species in the dataset was used as the embedding of the genetic distance representation space, so as to predict the image distance and species. identify. We found that using the MES activation function can predict the genetic distance of mushrooms very well, but the accuracy is lower than that of SoftMax. The proposed MushroomNet was demonstrated it shows great potential for automatic and online mushroom image and the proposed automatic procedure would assist and be a reference to traditional mushroom classification.

cs.CV↗

arXiv2022

Imaging Chern mosaic and Berry-curvature magnetism in magic-angle graphene

Charge carriers in magic angle graphene come in eight flavors described by a combination of their spin, valley, and sublattice polarizations. When the inversion and time reversal symmetries are broken by the substrate or by strong interactions, the degeneracy of the flavors can be lifted and their corresponding bands can be filled sequentially. Due to their non-trivial band topology and Berry curvature, each of the bands is classified by a topological Chern number, leading to the quantum anomalous Hall and Chern insulator states at integer fillings $ν$ of the bands. It has been recently predicted, however, that depending on the local atomic-scale arrangements of the graphene and the encapsulating hBN lattices, rather than being a global topological invariant, the Chern number C may become position dependent, altering transport and magnetic properties of the itinerant electrons. Using a SQUID-on-tip, we directly image the nanoscale Berry-curvature-induced equilibrium orbital magnetism, the polarity of which is governed by the local Chern number, and detect its two constituent components associated with the drift and the self-rotation of the electronic wave packets. At $ν=1$, we observe local zero-field valley-polarized Chern insulators forming a mosaic of microscopic patches of C=-1, 0, or 1, governed by the local sublattice polarization, consistent with predictions. Upon further filling, we find a first-order phase transition due to recondensation of electrons from valley K to K', which leads to irreversible flips of the local Chern number and the magnetization, and to the formation of valley domain walls giving rise to hysteretic global anomalous Hall resistance. The findings shed new light on the structure and dynamics of topological phases and call for exploration of the controllable formation of flavor domain walls and their utilization in twistronic devices.

cond-mat.mes-hall↗

arXiv2021

First Principles Calculations for Topological Quantum Materials

Discoveries of topological states and topological materials reshape our understanding of physics and materials over the last 15 years. First-principles calculations have been playing a significant role in bridging the theory of topology and experiments by predicting realistic topological materials. In this article, we overview the first-principles methodology on topological quantum materials. First, we unify different concepts of topological states in the same band inversion scenario. Then, we discuss the topology using first-principles band structures and newly-established topological materials databases. We stress challenges in characterizing symmetry-independent Weyl semimetals and calculating topological surface states, closing with an outlook on the exciting transport and optical phenomena induced by the topology.

cond-mat.mtrl-sci↗

arXiv2020

Chirality driven topological electronic structure of DNA-like materials

Topological aspects of the geometry of DNA and similar chiral molecules have received a lot of attention, while the topology of their electronic structure is less explored. Previous experiments have revealed that DNA can efficiently filter spin-polarized electrons between metal contacts, a process called chiral-induced spin-selectivity (CISS). However, the underlying correlation between chiral structure and electronic spin remains elusive. In this work, we reveal an orbital texture in the band structure, a topological characteristic induced by the chirality. We find that this orbital texture enables the chiral molecule to polarize the quantum orbital. This orbital polarization effect (OPE) induces spin polarization assisted by the spin-orbit interaction from a metal contact and leads to magnetorestistance and chiral separation. The orbital angular momentum of photoelectrons also plays an essential role in related photoemission experiments. Beyond CISS, we predict that OPE can induce spin-selective phenomena even in achiral but inversion-breaking materials.

cond-mat.mes-hall↗

arXiv2020

Giant nonlinear Hall effect in strained twisted bilayer graphene

Recent studies have shown that moiré flat bands in a twisted bilayer graphene(TBG) can acquire nontrivial Berry curvatures when aligned with hexagonal boron nitride substrate [1, 2], which can be manifested as a correlated Chern insulator near the 3/4 filling [3, 4]. In this work, we show that the large Berry curvatures in the moiré bands lead to strong nonlinear Hall(NLH) effect in a strained TBG with general filling factors. Under a weak uniaxial strain $\sim 0.1\%$, the Berry curvature dipole which characterizes the nonlinear Hall response can be as large as $\sim$ 200Å, exceeding the values of all previously known nonlinear Hall materials [5-14] by two orders of magnitude. The dependence of the giant NLH effect as a function of electric gating, strain and twist angle is further investigated systematically. Importantly, we point out that the giant NLH effect appears generically for twist angle near the magic angle due to the strong susceptibility of nearly flat moiré bands to symmetry breaking induced by strains. Our results establish TBG as a practical platform for tunable NLH effect and novel transport phenomena driven by nontrivial Berry phases.

cond-mat.mes-hall↗

arXiv2020

Detection of the Orbital Hall Effect by the Orbital-Spin Conversion

The intrinsic orbital Hall effect (OHE), the orbital counterpart of the spin Hall effect, was predicted and studied theoretically for more than one decade, yet to be observed in experiments. Here we propose a strategy to convert the orbital current in OHE to the spin current via the spin-orbit coupling from the contact. Furthermore, we find that OHE can induce large nonreciprocal magnetoresistance when employing magnetic contact. Both the generated spin current and the orbital Hall magnetoresistance can be applied to probe the OHE in experiments and design orbitronic devices.

cond-mat.mtrl-sci↗

arXiv2020

An electron-counting rule to determine the interlayer magnetic coupling of the van der Waals materials

In layered magnetic materials, the magnetic coupling between neighboring van der Waals layers is challenging to understand and anticipate, although the exchange interaction inside a layer can be well rationalized for example by the superexchange mechanism. In this work, we elucidate the interlayer exchange mechanism and propose an electron-counting rule to determine the interlayer magnetic order between van der Waals layers, based on counting the $d$-orbital occupation ($d^n$, where $n$ is the number of $d$-electrons at the magnetic cation). With this rule, we classify magnetic monolayers into two groups, type-I ($n<5$) and type-II ($n\geq5$), and derive three types of interlayer magnetic coupling for both insulators and metals. The coupling between two type-II layers prefers the antiferromagnetic (AFM) order, while type-I and type-II interfaces favor the ferromagnetic (FM) way. However, for two type-I layers, they display competition between FM and AFM orders and even lead to the stacking dependent magnetism. Additionally, metallic layers can also be incorporated into this rule with a minor correction from the free carrier hopping. Therefore, this rule provides simple guidance to understand the interlayer exchange and further design van der Waals junctions with desired magnetic orders.

cond-mat.mtrl-sci↗

arXiv2019

Anisotropic Bi2O2Se(Te) Monolayer: Realizing Ultra-High Carrier Mobility and Giant Electric Polarization in Two-Dimension

Here, we have identified the monolayer phase of Bi2O2Se as a promising two-dimensional semiconductor with ultra-high carrier mobility and giant electric polarization. Due to the strong reconstruction originated from the interlayer electrostatic force, we have applied structure prediction algorithms to explore the crystalline geometry of Bi2O2Se monolayer with the lowest total energy. Considering Se and Te belong to the same group, Bi2O2Te monolayer is also investigated based on a similar scheme. Further calculations suggest that the high carrier mobility is maintained in the monolayer phase and the moderate band gap will lead to the strong optical absorption in the visible light region. In particular, the electron mobility in Bi2O2Te can reach as high as 3610 cm2V-1s-1 at room temperature, which is almost ten times of conventional transition metal dichalcogenides (TMD) family. Because of the strong structural anisotropy, a remarkable spontaneous in-plane and out-of-plane electric polarization is additionally revealed along with significant piezoelectric properties, endowing them as promising candidates in the area of photovoltaic solar cells, optoelectronic materials and field effect transistors.

cond-mat.mtrl-sci↗

arXiv2019

Modulating Super-Exchange Strength to Achieve Robust Ferromagnetic Couplings in Two-Dimensional Semiconductors

Low-dimensional semiconducting ferromagnets have attracted considerable attention due to their promising applications as nano-size spintronics. However, realizing robust ferromagnetic couplings that can survive at high temperature is restrained by two decisive factors: super-exchange couplings and anisotropy. Despite widely explored low-dimensional anisotropy, strengthening super-exchange couplings has rarely been investigated. Here, we found that ligands with lower electronegativity can strengthen ferromagnetic super-exchange couplings and further proposed the ligand modulation strategy to enhance the Curie temperature of low-dimensional ferromagnets. Based on the metallic CrX2 (X = S, Se, Te) family, substituting ligand atoms by halides can form stable semiconducting phase as CrSeCl, CrSeBr and CrTeBr. It is interesting to discover that, the nearest ferromagnetic super-exchange couplings can be strengthened when substituting ligands from S to Se and Te. Such evolution originates from the enhanced electron hopping integral and reduced energy intervals between d and p orbits. While the second nearest anti-ferromagnetic couplings are also benefitted due to delocalized p-p interactions. Finally, ligand modulation strategy is applied in other ferromagnetic monolayers, further verifying our theory and providing a fundamental understanding on controlling super-exchange couplings in low-dimension.

cond-mat.mtrl-sci↗