arXiv subjects

Jin Xiao

Publications and source records attributed to Jin Xiao.

23 records · Page 2Linked to original sources

arXiv2021

Lessons learned from hyper-parameter tuning for microservice candidate identification

When optimizing software for the cloud, monolithic applications need to be partitioned into many smaller *microservices*. While many tools have been proposed for this task, we warn that the evaluation of those approaches has been incomplete; e.g. minimal prior exploration of hyperparameter optimization. Using a set of open source Java EE applications, we show here that (a) such optimization can significantly improve microservice partitioning; and that (b) an open issue for future work is how to find which optimizer works best for different problems. To facilitate that future work, see [https://github.com/yrahul3910/ase-tuned-mono2micro](https://github.com/yrahul3910/ase-tuned-mono2micro) for a reproduction package for this research.

cs.SE↗

arXiv2020

A Smartphone-based System for Real-time Early Childhood Caries Diagnosis

Early childhood caries (ECC) is the most common, yet preventable chronic disease in children under the age of 6. Treatments on severe ECC are extremely expensive and unaffordable for socioeconomically disadvantaged families. The identification of ECC in an early stage usually requires expertise in the field, and hence is often ignored by parents. Therefore, early prevention strategies and easy-to-adopt diagnosis techniques are desired. In this study, we propose a multistage deep learning-based system for cavity detection. We create a dataset containing RGB oral images labeled manually by dental practitioners. We then investigate the effectiveness of different deep learning models on the dataset. Furthermore, we integrate the deep learning system into an easy-to-use mobile application that can diagnose ECC from an early stage and provide real-time results to untrained users.

cs.CV↗

arXiv2019

A realistic dimension-independent approach for charged defect calculations in semiconductors

First-principles calculations of charged defects have become a cornerstone of research in semiconductors and insulators by providing insights into their fundamental physical properties. But current standard approach using the so-called jellium model has encountered both conceptual ambiguity and computational difficulty, especially for low-dimensional semiconducting materials. In this Communication, we propose a physical, straightforward, and dimension-independent universal model to calculate the formation energies of charged defects in both three-dimensional (3D) bulk and low-dimensional semiconductors. Within this model, the ionized electrons or holes are placed on the realistic host band-edge states instead of the virtual jellium state, therefore, rendering it not only naturally keeps the supercell charge neutral, but also has clear physical meaning. This realistic model reproduces the same accuracy as the traditional jellium model for most of the 3D semiconducting materials, and remarkably, for the low-dimensional structures, it is able to cure the divergence caused by the artificial long-range electrostatic energy introduced in the jellium model, and hence gives meaningful formation energies of defects in charged state and transition energy levels of the corresponding defects. Our realistic method, therefore, will have significant impact for the study of defect physics in all low-dimensional systems including quantum dots, nanowires, surfaces, interfaces, and 2D materials.

cond-mat.mtrl-sci↗

arXiv2019

Stress-sign-tunable Poisson's Ratio in Monolayer Blue Phosphorus Oxide

Negative Poisson's ratio (NPR) materials have attracted tremendous interest due to their unusual physical properties and potential applications. Certain two-dimensional (2D) monolayer materials have also been found to exhibit NPR and the corresponding deformation mechanism varies. In this study, we found, based on first-principles calculations, that the Poisson's ratio (PR) sign of monolayer Blue Phosphorus Oxide (BPO) can be tuned by strain: the PR is positive under uniaxial strain <= -1% but becomes negative under > 0. The deformation mechanism for BPO under strain depends on the mutual competition between the P-P attraction and P-O repulsion effect, and these two factors induce two different deformation pathways (one with positive PR, and the other with NPR). Moreover, with increasing of strain, both the decreased strength of P-P attraction and the increased strength of P-O repulsion effect modulate the PR of BPO from positive to negative.

cond-mat.mtrl-sci↗

arXiv2018

Calculations of point defects in the layered MX2 (M=Mo, W; X=S, Te): Substitution by the groups III, V and VII elements

Dopability in semiconductors plays a crucial role in device performance. Using the first-principles density-functional theory calculations, we investigate systematically the doping properties of layered MX2 (M= Mo, W; X=S, Te) by replacing M or X with the groups III, V and VII elements. It is found that the defect BM is hard to form in MX2 due to the large formation energy originating from the crystal distortion, while AlM is easy to realize compared to the former. In MoS2, WS2 and MoTe2, Al is the most desirable p-type dopant under anion-rich conditions among the group III components, since AlM has relatively low transition and formation energies. With respect to the doping of the group V elements, it is found that the substitutions on the cation sites have deeper defect levels than those on the anion sites due to the strong electronegativity. AsTe and SbTe in MoTe2 and WTe2 are trend to form shallow acceptors under cation-rich conditions, indicating high hole-concentrations for p-type doping, whereas SbS in MoS2 and PTe in WTe2 are shown to be good p-type candidates under cation-rich conditions. In despite of that the substitutions of group VII on X site have low formation energies, the transition energies are too high to achieve n-type MoS2 and WS2. Nevertheless, for MoTe2, the substitutions with the group VII elements on the anion sites are suitable for n-type doping on account of the shallow donor levels and low formation energies under Mo-rich condition. As to WTe2, F is the only potential donor due to the shallow transition energy of FTe. Our findings of filtering out unfavorable and identifying favorable dopants in MX2 are very valuable for experimental implementations.

cond-mat.mtrl-sci↗